DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD127 BZA800A-series Quadruple ESD transient voltage suppressor Preliminary specification 2000 Apr 18 Philips Semiconductors Preliminary specification Quadruple ESD transient voltage suppressor BZA800A-series PINNING FEATURES • ESD rating >8 kV, according to IEC1000-4-2 PIN DESCRIPTION • SOT353 (SC-88A) surface mount package 1 cathode 1 • Common anode configuration 2 common anode 3 cathode 2 APPLICATIONS 4 cathode 3 • Computers and peripherals 5 cathode 4 • Audio and video equipment • Communication systems • Medical equipment. 3 handbook, halfpage 2 c2 1 1 b2 DESCRIPTION 3 Monolithic transient voltage suppressor diode in a five lead SOT353 (SC-88A) package for 4-bit wide ESD transient suppression. c1/e2 2 4 b1 5 4 Top view 5 e1 MAM212 MARKING TYPE NUMBER MARKING CODE BZA856A Z1 BZA862A Z2 BZA868A Z3 BZA820A Z4 2000 Apr 18 Fig.1 Simplified outline SOT353 (SC-88A) 2 Philips Semiconductors Preliminary specification Quadruple ESD transient voltage suppressor BZA800A-series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode IZ working current Ta = 25 °C − note 1 mA IF continuous forward current Ta = 25 °C − 200 mA IFSM non-repetitive peak forward current tp = 1 ms; square pulse − 3.75 A Ptot total power dissipation Ta = 25 °C − 335 mW PZSM non repetitive peak reverse power dissipation square pulse; tp = 1 ms; see Fig.3 BZA856A, BZA862A, BZA868A − 24 W BZA820A − 17 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Notes 1. DC working current limited by P tot max. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient all diodes loaded VALUE 370 UNIT K/W ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER VF forward voltage IR reverse current CONDITIONS MAX. UNIT IF = 200 mA 1.3 V BZA856A VR = 3 V 2000 nA BZA862A VR = 4 V 700 nA BZA868A VR = 4.3 V 200 nA BZA820A VR = 15 V 100 nA Tj = 25 °C unless otherwise specified TYPE WORKING VOLTAGE VZ (V) at IZ = 1 mA DIFFERENTIAL RESISTANCE rdif (Ω) at IZ = 1 mA TEMP. COEFF. SZ (mV/K) at IZ = 1 mA DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 V NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 1 ms; Tamb = 25 °C MAX. TYP. MAX. MAX. MIN. TYP. MAX. BZA856A 5.32 5.6 5.88 400 −0.2 240 3.2 BZA862A 5.89 6.2 6.51 300 1.8 200 2.9 200 3 180 2.6 125 16 50 0.6 BZA868A BZA820A 2000 Apr 18 6.46 19 6.8 20 7.14 21 3 Philips Semiconductors Preliminary specification Quadruple ESD transient voltage suppressor BZA800A-series 100 10 IZSM (A) BZA856A, BZA862A, BZA868A PZSM (W) BZA856A BZA862A BZA868A BZA820A BZA820A 10 1 0.1 0.01 0.1 1 1 0.01 10 0.1 1 10 tp (ms) tp (ms) PZSM = VZSM × IZSM. VZSM is the non-repetitive peak reverse voltage at IZSM. Fig.2 Fig.3 Maximum non-repetitive peak reverse current as a function of pulse time. 200 Cd (pF) 160 120 BZA856A 80 BZA862A BZA868A 40 BZA820A 0 0 5 10 15 VR (V) Tj = 25 °C; f = 1 MHz. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2000 Apr 18 4 Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse). Philips Semiconductors Preliminary specification Quadruple ESD transient voltage suppressor BZA800A-series ESD Tester RZ 450 ohm 10X Attenuator RG 223/U 50 ohm Coax Digitizing Oscilloscope note 1 CZ 50 ohm IEC 1000-4-2 network C Z = 150 pF; R Z = 330 Ω Note 1: attenuator is only used for open socket high voltage measurements 1/4 BZA800A Vertical Scale = 100 V/Div Horizontal Scale = 50 ns/Div B ZA 8 20A V ertica l S cale =10 V /Div H orizontal Sc ale = 50 ns/D iv G ND -4 B ZA 8 68A G ND -3 B ZA 8 62A G ND -2 B ZA 8 56A G ND -1 GND unclamped +1 kV ESD voltage waveform (IEC 1000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 1000-4-2 network) GND GN D Vertical Scale Scale =10 =10 VV/D /Div iv Vertical Horizontal Scale Scale == 50 50 ns/D ns/Div iv Horizontal Vertical Scale = 100 V/Div Horizontal Scale = 50 ns/Div unclamped − 1 kV ESD voltage waveform (IEC 1000-4-2 network) clamped −1 kV ESD voltage waveform (IEC 1000-4-2 network) Fig.5 ESD clamping test set-up and waveforms. 2000 Apr 18 5 Philips Semiconductors Preliminary specification Quadruple ESD transient voltage suppressor BZA800A-series APPLICATION INFORMATION Typical common anode application A quadruple transient suppressor in a SOT353 package makes it possible to protect four separate lines using only one package. Two simplified examples are shown in Figs 6 and 7. KEYBOARD TERMINAL PRINTER ETC. A B C D FUNCTIONAL DECODER I/O GND BZA800A Fig.6 Computer interface protection. Fig.7 Microprocessor protection. 2000 Apr 18 6 Philips Semiconductors Preliminary specification Quadruple ESD transient voltage suppressor Device placement and printed-circuit board layout Circuit board layout is of extreme importance in the suppression of transients. The clamping voltage of the BZA800A is determined by the peak transient current and the rate of rise of that current (di/dt). Since parasitic inductances can further add to the clamping voltage (V = L di/dt) the series conductor lengths on the printed-circuit board should be kept to a minimum. This includes the lead length of the suppression element. In addition to minimizing conductor length the following printed-circuit board layout guidelines are recommended: 1. Place the suppression element close to the input terminals or connectors. 2. Keep parallel signal paths to a minimum. 3. Avoid running protection conductors in parallel with unprotected conductors. 4. Minimize all printed-circuit board loop areas including power and ground loops. 5. Minimize the length of the transient return path to ground. 6. Avoid using shared transient return paths to a common ground point. 2000 Apr 18 7 BZA800A-series Philips Semiconductors Preliminary specification Quadruple ESD transient voltage suppressor BZA800A-series PACKAGE OUTLINE Plastic surface mounted package; 5 leads SOT353 D E B y X A HE 5 v M A 4 Q A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E (2) e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT353 2000 Apr 18 REFERENCES IEC JEDEC EIAJ SC-88A 8 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Preliminary specification Quadruple ESD transient voltage suppressor BZA800A-series DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. 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