DISCRETE SEMICONDUCTORS DATA SHEET BFQ136 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ136 PINNING NPN transistor in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. It features extremely high output voltage capabilities. PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter 4 page 1 3 2 Top view MBK187 Fig.1 SOT122A. It is primarily intended for final stages in UHF amplifiers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT − 18 V − 600 mA VCEO collector-emitter voltage IC DC collector current Ptot total power dissipation up to Tc = 100 °C − 9 W fT transition frequency IC = 500 mA; VCE = 15 V; f = 500 MHz; Tj = 25 °C 4.0 − GHz GUM maximum unilateral power gain IC = 500 mA; VCE = 15 V; f = 800 MHz; Tamb = 25 °C 12.5 − dB Vo output voltage Ic = 500 mA; VCE = 15 V; dim = −60 dB; RL = 75 Ω; f(p+q−r) = 793.25 MHz; Tamb = 25 °C 2.5 − V open base WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. September 1995 2 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ136 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 18 V VEBO emitter-base voltage open collector − 2 V IC DC collector current − 600 mA Ptot total power dissipation up to Tc = 100 °C − 9 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C THERMAL RESISTANCE SYMBOL PARAMETER Rth j-c THERMAL RESISTANCE thermal resistance from junction to case 11 K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 15 V − − 75 µA hFE DC current gain IC = 500 mA; VCE = 15 V 25 75 − Cc collector capacitance IE = ie = 0; VCB = 15 V; f = 1 MHz − 7.0 − pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 40 − pF Cre feedback capacitance IC = 0; VCE = 15 V; f = 1 MHz − 4.0 − pF Ccs collector-stud capacitance note 1 − 0.8 − pF fT transition frequency IC = 500 mA; VCE = 15 V; f = 500 MHz − 4.0 − GHz GUM maximum unilateral power gain (note 2) IC = 500 mA; VCE = 15 V; f = 800 MHz; Tamb = 25 °C − 12.5 − dB Vo output voltage (see Fig.2) note 3 − 2.5 − V Notes 1. Measured with emitter and base grounded. 2. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 S 21 - dB. G UM = 10 log ------------------------------------------------------------2 2 1 – S 1 – S 11 22 3. dim = −60 dB; IC = 500 mA; VCE = 15 V; RL = 75 Ω; Tamb = 25 °C; Vp = Vo at dim = −60 dB; fp = 795.25 MHz; Vq = Vo −6 dB; fq = 803.25 MHz; Vr = Vo −6 dB; fr = 805.25 MHz; measured at f(p+q−r) = 793.25 MHz. September 1995 3 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ136 V BB handbook, full pagewidth VCC 4.7 µF HF choke 1 nF 9 pF 14 nH input 75 Ω 6 nH 1.5 µF 4.7 µF 3 pF 1.8 pF 3.3 pF 3 pF 7.5 nH 20 pF output 75 Ω 9 pF DUT 9 pF 14 nH 1 kΩ 36 nH 36 nH 9 pF MEA261 Fig.2 Intermodulation distortion MATV test circuit. MEA263 MBB361 12 120 handbook, halfpage handbook, halfpage Cc (pF) h FE 80 8 40 4 0 0 0 40 80 120 0 160 I C (mA) 10 VCE = 15 V; Tj = 25 °C. IE = ie = 0; f = 1 MHz; Tj = 25 °C Fig.3 Fig.4 DC current gain as a function of collector current. September 1995 4 V CB (V) 20 Collector capacitance as a function of collector-base voltage. Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ136 MEA264 MEA262 5 40 handbook, halfpage handbook, halfpage fT G UM (GHz) 4 (dB) 30 3 20 2 10 1 0 10 100 I C (mA) 0 0.1 1000 VCE = 15 V; f = 500 MHz; Tj = 25 °C Fig.5 f (MHz) IC = 500 mA; VCE = 15 V; Tamb = 25 °C. Transition frequency as a function of collector current. September 1995 1 Fig.6 5 Maximum unilateral power gain as a function of frequency. 10 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ136 1 handbook, full pagewidth 0.5 0.2 +j 0 2 1200 MHz 1000 800 500 200 0.2 5 10 0.5 1 2 5 10 ∞ 100 –j 10 40 5 0.2 2 0.5 MEA267 1 IC = 500 mA; VCE = 15 V; Tamb = 25 °C. Zo = 50 Ω. Fig.7 Common emitter input reflection coefficient (S11). 90° handbook, full pagewidth 120° 40 60° 150° 30° 100 200 +ϕ 500 180° 1200 MHz 10 20 30 0° −ϕ 30° 150° 60° 120° 90° MEA266 IC = 500 mA; VCE = 15 V; Tamb = 25 °C. Fig.8 Common emitter forward transmission coefficient (S21). September 1995 6 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ136 90° handbook, full pagewidth 120° 60° 1200 MHz 1000 150° 30° 800 500 +ϕ 200 100 180° 40 0.05 0.10 0° 0.15 −ϕ 30° 150° 60° 120° MEA268 90° IC = 500 mA; VCE = 15 V; Tamb = 25 °C. Fig.9 Common emitter reverse transmission coefficient (S12). 1 handbook, full pagewidth 0.5 2 0.2 +j 5 1200 MHz 1000 800 500 0.5 0.2 0 10 1 2 5 10 ∞ 200 100 –j 0.2 10 5 40 2 0.5 IC = 500 mA; VCE = 15 V; Tamb = 25 °C. Zo = 50 Ω. 1 MEA265 Fig.10 Common emitter output reflection coefficient (S22). September 1995 7 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ136 PACKAGE OUTLINE Studded ceramic package; 4 leads SOT122A D A ceramic BeO metal Q c N1 A D1 w1 M A D2 N M W N3 M1 X detail X H b α 4 L 3 H 1 2 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 D2 H L M1 M N N1 max. N3 Q W w1 α mm 5.97 4.74 5.85 5.58 0.18 0.14 7.50 7.23 6.48 6.22 7.24 6.93 27.56 25.78 9.91 9.14 3.18 2.66 1.66 1.39 11.82 11.04 1.02 3.86 2.92 3.38 2.74 8-32 UNC 0.381 90° OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-04-18 SOT122A September 1995 EUROPEAN PROJECTION 8 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ136 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 9