IRF HFA140NH60

PD -2.447 rev. B 03/99
HFA140NH60
HEXFRED
Ultrafast, Soft Recovery Diode
TM
LUG
TERMINAL
ANODE
Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of
Recovery Parameters
a
d
BASE CATHODE
V R = 600V
V F(typ.)ƒ = 1.3V
IF(AV) = 140A
Qrr (typ.) = 490nC
IRRM(typ.) = 9.3A
trr(typ.) = 39ns
di(rec)M/dt (typ.)ƒ = 200A/µs
Description
HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are
ideally suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
TM
HALF-PAK
Absolute Maximum Ratings (per Leg)
Parameter
VR
IF @ TC = 25°C
IF @ TC = 100°C
IFSM
EAS
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current 
Non-Repetitive Avalanche Energy ‚
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
Units
600
222
111
800
220
625
250
V
A
µJ
W
-55 to +150
°C
Thermal - Mechanical Characteristics
Parameter
RthJC
RthCS
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Weight
Mounting Torque „
Terminal Torque
Vertical Pull
2 inch Lever Pull
Note:  Limited by junction temperature
‚ L = 100µH, duty cycle limited by max TJ
ƒ 125°C
Min.
Typ.
Max.
Units
––––
––––
––––
15 (1.7)
30 (3.4)
––––
––––
––––
0.15
26 (0.9)
––––
––––
––––
––––
0.20
––––
––––
25 (2.8)
40 (4.6)
35
35
°C/W
K/W
g (oz)
lbf•in
(N•m)
lbf•in
„ Mounting surface must be smooth, flat, free or burrs or other
protrusions. Apply a thin even film or thermal grease to mounting
surface. Gradually tighten each mounting bolt in 5-10 lbf•in steps
until desired or maximum torque limits are reached. Module
1
HFA140NH60
PD-2.447 rev. B 03/99
Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
Parameter
VBR
V FM
Min. Typ. Max. Units
Cathode Anode Breakdown Voltage
Max Forward Voltage
See Fig. 1
IRM
Max Reverse Leakage Current
See Fig. 2
CT
Junction Capacitance
LS
Series Inductance
See Fig. 3
600
–––
–––
–––
–––
–––
–––
–––
1.4
1.6
1.3
8.0
2.0
280
–––
1.6
1.8
1.5
40
8.0
400
V
µA
mA
pF
–––
5.0
–––
nH
V
Test Conditions
IR = 100µA
IF = 140A
IF = 280A
IF = 140A, T J = 125°C
VR = VR Rated
TJ = 125°C, VR = 480V
VR = 200V
From top of terminal hole to mounting
plane
Dynamic Recovery Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
Parameter
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
di(rec)M /dt1
di(rec)M /dt2
Min. Typ. Max. Units
Reverse Recovery Time
See Fig. 5
Test Conditions
––– 39 –––
IF = 1.0A, dif /dt = 200A/µs, VR = 30V
––– 92 140
ns TJ = 25°C
––– 180 270
TJ = 125°C
IF = 140A
––– 9.3 17
TJ = 25°C
A
––– 16
30
TJ = 125°C
VR = 200V
––– 490 1200
TJ = 25°C
nC
––– 1400 4000
TJ = 125°C
dif /dt = 200A/µs
––– 290 –––
TJ = 25°C
A/µs
––– 200 –––
TJ = 125°C
Peak Recovery Current
See Fig. 6
Reverse Recovery Charge
See Fig. 7
Peak Rate of Fall of Recovery Current
During tb
See Fig. 8
30.40 (1.197)
29.90 (1.177)
1/4-20 UNC-2B
19.69 (0.775)
18.42 (0.725)
4.11 (0.162)
3.86 (0.152)
12.83 (0.505)
DIA.
12.57 (0.495)
4.11 (0.162)
DIA.
3.86 (0.152)
19.18 (0.755)
SQ.
18.92 (0.745)
LEAD ASSIGNMENTS
1 - ANODE
2 - CATHODE
1
15.75 (0.620)
14.99 (0.590)
14.10 (0.555)
13.59 (0.535)
2
2
39.62 (1.560)
38.61 (1.520)
3.30 (0.130)
3.05 (0.120)
HALF-PAK
Dimensions in millimeters and inche
HFA140NH60
PD-2.447 rev. B 03/99
10000
Reverse Current - I R (µA)
100
TJ = 150°C
TJ = 150°C
1000
TJ = 125°C
100
10
1
TJ = 25°C
0.1
TJ = 125°C
0
200
TJ = 25°C
400
600
Reverse Voltage - VR (V)
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
10
Junction Capacitance - C T (pF)
Instantaneous Forward Current - I F (A)
1000
10000
A
TJ = 25°C
1000
1
0.0
1.0
2.0
3.0
4.0
Forward Voltage Drop - V FM (V)
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
100
1
10
100
1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Thermal Impedance - Z thJC (K/W )
1
0.1
D=
D=
D=
D=
0.50
0.33
0.25
0.17
PDM
t
D = 0.08
0.01
0.001
0.00001
1
t2
Notes:
1. Duty factor D = t / t
1 2
Single Pulse
(Thermal Resistance)
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
10
100
t 1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
3
HFA140NH60
PD-2.447 rev. B 03/99
100
280
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
240
I F = 200A
160
I IRRM - (A)
t rr - (ns)
200
IF = 200A
IF = 140A
10
I F = 50A
I F = 140A
120
IF = 50A
80
40
100
di f /dt - (A/µs)
1
100
1000
1000
Fig. 6 - Typical Recovery Current vs. dif/dt
Fig. 5 - Typical Reverse Recovery vs. dif/dt
5000
10000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
4000
di(rec)M/dt - (A/µs)
I F = 200A
Q RR - (nC)
di f /dt - (A/µs)
3000
IF = 140A
IF = 50A
2000
I F = 50A
1000
I F = 140A
IF = 200A
1000
0
100
di f /dt - (A/µs)
Fig. 7 - Typical Stored Charge vs. dif/dt
4
1000
100
100
di f /dt - (A/µs)
Fig. 8 - Typical di(rec)M/dt vs. dif/dt
1000
HFA140NH60
PD-2.447 rev. B 03/99
3
t rr
IF
tb
ta
0
REVERSE RECOVERY CIRCUIT
VR = 200V
Q rr
2
I RRM
4
0.5 I RRM
di(rec)M/dt
5
0.01 Ω
0.75 I RRM
L = 70µH
1
D.U.T.
D
dif/dt
ADJUST G
di f /dt
4. Qrr - Area under curve defined by trr
and I RRM
t rr X IRRM
Qrr =
2
1. dif/dt - Rate of change of current
through zero crossing
IRFP250
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 I RRM
extrapolated to zero current
S
Fig. 9 - Reverse Recovery Parameter Test
Circuit
L = 100µH
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and
Definitions
I L(PK)
HIGH-SPEED
SWITCH
DUT
Rg = 25 ohm
CURRENT
MONITOR
FREE-WHEEL
DIODE
+
DECAY
TIME
Vd = 50V
V (AVAL)
V R(RATED)
Fig. 11 - Avalanche Test Circuit and Waveforms
WORLD HEADQUARTERS:
EUROPEAN HEADQUARTERS:
IR CANADA:
IR GERMANY:
IR ITALY:
IR FAR EAST:
IR SOUTHEAST ASIA:
IR TAIWAN:
http://www.irf.com
233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.
Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.
15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801.
Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933.
Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220.
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.
1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.
16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.
Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
5