PHILIPS PBSS4540X

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
PBSS4540X
40 V, 5 A
NPN low VCEsat (BISS) transistor
Product specification
Supersedes data of 2004 Jun 11
2004 Nov 04
Philips Semiconductors
Product specification
40 V, 5 A
NPN low VCEsat (BISS) transistor
PBSS4540X
QUICK REFERENCE DATA
FEATURES
• High hFE and low VCEsat at high current operation
SYMBOL
• High collector current capability: IC maximum 4 A
• High efficiency leading to less heat generation.
APPLICATIONS
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
40
V
IC
collector current (DC)
4
A
ICM
peak collector current
10
A
RCEsat
equivalent on-resistance
71
mΩ
• Medium power peripheral drivers (e.g. fan and motor)
• Strobe flash units for DSC and mobile phones
PINNING
• Inverter applications (e.g. TFT displays)
PIN
• Power switch for LAN and ADSL systems
• Medium power DC-to-DC conversion
• Battery chargers.
DESCRIPTION
1
emitter
2
collector
3
base
DESCRIPTION
NPN low VCEsat transistor in a medium power SOT89
(SC-62) package.
PNP complement: PBSS5540X.
2
3
MARKING
1
MARKING CODE(1)
TYPE NUMBER
PBSS4540X
sym042
*1B
3
2
1
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PBSS4540X
2004 Nov 04
SC-62
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
2
VERSION
SOT89
Philips Semiconductors
Product specification
40 V, 5 A
NPN low VCEsat (BISS) transistor
PBSS4540X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
40
V
VCEO
collector-emitter voltage
open base
−
40
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current (DC)
−
4
A
ICRM
maximum repetitive collector current
notes 1 and 2
−
5
A
ICM
peak collector current
tp ≤ 1 ms
−
10
A
−
1
A
−
2
A
notes 1 and 2
−
2.5
W
note 2
−
0.55
W
note 3
−
1
W
note 4
−
1.4
W
note 5
−
1.6
W
+150
°C
IB
base current (DC)
IBM
peak base current
tp ≤ 1 ms
Ptot
total power dissipation
Tamb ≤ 25 °C
Tstg
storage temperature
−65
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other
mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
2004 Nov 04
3
Philips Semiconductors
Product specification
40 V, 5 A
NPN low VCEsat (BISS) transistor
001aaa229
1600
Ptot
(mW)
PBSS4540X
(1)
1200
(2)
800
(3)
400
0
−50
0
50
100
150
200
Tamb (°C)
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) FR4; standard footprint.
Fig.2 Power derating curves.
2004 Nov 04
4
Philips Semiconductors
Product specification
40 V, 5 A
NPN low VCEsat (BISS) transistor
PBSS4540X
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
from junction to ambient
Rth(j-s)
VALUE
UNIT
notes 1 and 2
50
K/W
note 2
225
K/W
note 3
125
K/W
note 4
90
K/W
note 5
80
K/W
16
K/W
in free air
from junction to soldering point
Notes
1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other
mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
006aaa232
103
Zth
(K/W)
102
(1)
(2)
(3)
(4)
(5)
(6)
10
(7)
(8)
(9)
1
10−1
10−5
(10)
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 printed-circuit board; standard footprint.
(1) δ = 1.
(3) δ = 0.5.
(5) δ = 0.2.
(7) δ = 0.05.
(9) δ = 0.01.
(2) δ = 0.75.
(4) δ = 0.33.
(6) δ = 0.1.
(8) δ = 0.02.
(10) δ = 0.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 04
5
Philips Semiconductors
Product specification
40 V, 5 A
NPN low VCEsat (BISS) transistor
PBSS4540X
006aaa233
103
Zth
(K/W)
(1)
102
(2)
(3)
(5)
(4)
(6)
10
(7)
(8)
(9)
1
(10)
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
006aaa234
103
Zth
(K/W)
102
(1)
(2)
(3)
(4)
10
(5)
(6)
(7)
(8)
(9)
1
(10)
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 04
6
Philips Semiconductors
Product specification
40 V, 5 A
NPN low VCEsat (BISS) transistor
PBSS4540X
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off
current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCB = 30 V; IE = 0 A
−
−
100
nA
VCB = 30 V; IE = 0 A; Tj = 150 °C
−
−
50
µA
VCE = 30 V; VBE = 0 V
−
−
0.1
µA
nA
ICES
collector-emitter cut-off
current
IEBO
emitter-base cut-off current VEB = 5 V; IC = 0 A
−
−
100
hFE
DC current gain
VCE = 2 V; IC = 0.5 A
300
−
−
VCE = 2 V; IC = 1 A; note 1
300
−
−
VCE = 2 V; IC = 2 A; note 1
250
−
−
VCE = 2 V; IC = 5 A; note 1
100
−
−
−
−
90
mV
VCEsat
collector-emitter saturation IC = 0.5 A; IB = 5 mA
voltage
IC = 1 A; IB = 10 mA
−
−
120
mV
IC = 2 A; IB = 200 mA; note 1
−
−
150
mV
IC = 4 A; IB = 200 mA; note 1
−
−
290
mV
IC = 5 A; IB = 500 mA; note 1
−
−
355
mV
RCEsat
equivalent on-resistance
IC = 5 A; IB = 500 mA; note 1
−
40
71
mΩ
VBEsat
base-emitter saturation
voltage
IC = 4 A; IB = 200 mA; note 1
−
−
1.1
V
IC = 5 A; IB = 500 mA; note 1
−
−
1.2
V
VBEon
base-emitter turn-on
voltage
VCE = 2 V; IC = 2 A
−
−
1.1
V
fT
transition frequency
VCE = 10 V; IC = 0.1 A;
f = 100 MHz
70
−
−
MHz
Cc
collector capacitance
VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
−
−
75
pF
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2004 Nov 04
7
Philips Semiconductors
Product specification
40 V, 5 A
NPN low VCEsat (BISS) transistor
PBSS4540X
001aaa223
800
hFE
001aaa222
1.2
(1)
VBE
(V)
600
(2)
0.8
(1)
(2)
400
(3)
(3)
0.4
200
0
10−1
1
10
102
0.0
10−1
103
104
IC (mA)
1
VCE = 2 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
VCE = 2 V.
(1) Tamb = 55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.6
Fig.7
DC current gain as a function of collector
current; typical values.
001aaa225
1
10
102
Base-emitter voltage as a function of
collector current; typical values.
001aaa997
1
VCEsat
(V)
VCEsat
(V)
10−1
10−1
103
104
IC (mA)
(1)
(1)
(2)
10−2
(2)
10−2
(3)
(3)
10−3
10−1
1
10
102
10−3
10−1
103
104
IC (mA)
IC/IB = 20.
Tamb = 25 °C.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) IC/IB = 100.
(2) IC/IB = 50.
(3) IC/IB = 10.
Fig.8
Fig.9
Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Nov 04
8
1
10
102
103
104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values.
Philips Semiconductors
Product specification
40 V, 5 A
NPN low VCEsat (BISS) transistor
PBSS4540X
001aaa227
10
001aaa224
102
RCEsat
(Ω)
VBEsat
(V)
1
10
1
(1)
(2)
(3)
10−1
(1)
(2)
(3)
10−1
10−1
1
10
102
10−2
10−1
103
104
IC (mA)
1
102
10
103
104
IC (mA)
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.10 Base-emitter saturation voltage as a
function of collector current; typical values.
Fig.11 Equivalent on-resistance as a function of
collector current; typical values.
001aaa973
103
001aaa221
10
RCEsat
(Ω)
IC
(A)
102
8
(1)
(1)
10
6
(2)
(2)
(3)
1
(3)
4
(4)
(5)
10−1
10−2
10−1
2
1
10
102
0
103
104
IC (mA)
0
(2) IC/IB = 50.
(1) IB = 25 mA.
(2) IB = 20 mA.
(3) IC/IB = 10.
Fig.12 Equivalent on-resistance as a function of
collector current; typical values.
2004 Nov 04
1
1.5
2
VCE (V)
Tamb = 25 °C.
(1) IC/IB = 100.
0.5
(3) IB = 15 mA.
(4) IB = 10 mA.
(5) IB = 5 mA.
Fig.13 Collector current as a function of
collector-emitter voltage; typical values.
9
Philips Semiconductors
Product specification
40 V, 5 A
NPN low VCEsat (BISS) transistor
PBSS4540X
Reference mounting conditions
32 mm
32 mm
10 mm
2.5 mm
40
mm
40
mm
1 mm
10 mm
3 mm
2.5 mm
2.5 mm
1 mm
1 mm
0.5 mm
0.5 mm
5 mm
5 mm
3.96 mm
3.96 mm
1.6 mm
1.6 mm
001aab105
001aaa234
Fig.15 FR4, mounting pad for collector 1 cm2.
Fig.14 FR4, standard footprint.
32 mm
30 mm
20
mm
40
mm
2.5 mm
1 mm
0.5 mm
5 mm
3.96 mm
1.6 mm
001aaa235
Fig.16 FR4, mounting pad for collector 6 cm2.
2004 Nov 04
10
Philips Semiconductors
Product specification
40 V, 5 A
NPN low VCEsat (BISS) transistor
PBSS4540X
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
bp3
E
HE
Lp
1
2
3
c
bp2
w M
bp1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp1
bp2
bp3
c
D
E
e
e1
HE
Lp
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
1.2
0.8
0.13
OUTLINE
VERSION
SOT89
2004 Nov 04
REFERENCES
IEC
JEDEC
JEITA
TO-243
SC-62
11
EUROPEAN
PROJECTION
ISSUE DATE
99-09-13
04-08-03
Philips Semiconductors
Product specification
40 V, 5 A
NPN low VCEsat (BISS) transistor
PBSS4540X
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Nov 04
12
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Contact information
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Fax: +31 40 27 24825
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SCA76
© Koninklijke Philips Electronics N.V. 2004
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Printed in The Netherlands
R75/03/pp13
Date of release: 2004
Nov 04
Document order number:
9397 750 13885