Composite Transistors XN04505 (XN4505) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ■ Features 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 0.30+0.10 –0.05 0.50+0.10 –0.05 1.1+0.2 –0.1 • 2SD0601A (2SD601A) + 2SD1328 Tr1 Overall 1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ: SC-74 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 50 V Marking Symbol: DZ Emitter-base voltage (Collector open) VEBO 7 V Internal Connection IC 100 mA Peak collector current ICP 200 mA Collector-base voltage (Emitter open) VCBO 25 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 12 V Collector current IC 0.5 A Peak collector current ICP 1 A Total power dissipation PT 300 mW Collector current Tr2 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 4 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 5 Tr2 3 1.1+0.3 –0.1 10˚ ■ Basic Part Number Parameter 0.4±0.2 6 5˚ 5 1.50+0.25 –0.05 4 0.16+0.10 –0.06 2.8+0.2 –0.3 For general amplification (Tr1) For amplification of low-frequency output (Tr2) 4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Package 6 Tr1 2 1 Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00079BED 1 XN04505 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 µA hFE VCE = 10 V, IC = 2 mA 460 0.5 V Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob Conditions Min Typ 160 Max Unit IC = 100 mA, IB = 10 mA 0.3 VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. • Tr2 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 25 Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 20 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 12 V Collector-base cutoff current (Emitter open) ICBO VCB = 25 V, IE = 0 Forward current transfer ratio *1 hFE1 VCE = 2 V, IC = 0.5 A 200 hFE2 VCE = 2 V, IC = 1 A 60 Collector-emitter saturation voltage *1 Base-emitter saturation voltage *1 Transition frequency Conditions VCE(sat) IC = 0.5 A, IB = 20 mA VBE(sat) IC = 0.5 A, IB = 20 mA fT Collector output capacitance (Common base, input open circuited) Cob ON resistance *2 Ron Min Typ Max Unit V 0.13 0.1 µA 800 0.40 V 1.2 V VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 10 pF 1.0 Ω Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement 1 kΩ *2: Ron test circuit IB = 1 mA f = 1 kHz V = 0.3 V VB VV Ron = 2 VA VB × 1 000 (Ω) V A − VB SJJ00079BED XN04505 Common characteristics chart PT Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of Tr1 IC VCE 60 IB VBE Ta = 25°C IB = 160 µA 200 120 µA 100 µA 30 80 µA 60 µA 20 Collector current IC (mA) 140 µA 40 800 600 400 40 µA 10 0 0 2 4 6 8 10 Collector-emitter saturation voltage VCE(sat) (V) 200 160 120 80 40 400 600 0.2 0.4 0.6 0.8 1.0 0 800 Base current IB (µA) 1 000 −25°C 102 25°C Ta = 75°C −25°C 1 10 Collector current IC (mA) SJJ00079BED 1.2 1.6 2.0 hFE IC 1 10−2 10−1 0.8 600 IC / IB = 10 10 10−1 0.4 Base-emitter voltage VBE (V) VCE(sat) IC VCE = 10 V Ta = 25°C 200 Ta = 75°C 80 Base-emitter voltage VBE (V) IC I B 240 0 25°C 120 0 0 Collector-emitter voltage VCE (V) 0 160 40 200 20 µA Forward current transfer ratio hFE 0 VCE = 10 V VCE = 10 V Ta = 25°C Base current IB (µA) Collector current IC (mA) 240 1 000 50 Collector current IC (mA) IC VBE 1 200 102 VCE = 10 V 500 400 Ta = 75°C 25°C 300 −25°C 200 100 0 10−1 1 10 102 Collector current IC (mA) 3 XN04505 fT I E Transition frequency fT (MHz) 300 VCB = 10 V Ta = 25°C 240 180 120 60 0 −10−1 −1 −10 −102 Emitter current IE (mA) Characteristics charts of Tr2 3.5 mA 3.0 mA 0.8 2.5 mA 2.0 mA 0.6 1.5 mA 0.4 1.0 mA 0.5 mA 0.2 0 0 1 2 3 4 5 6 1 Ta = 75°C 10−1 10−2 10−2 Transition frequency fT (MHz) Forward current transfer ratio hFE 25°C −25°C 200 1 Collector current IC (A) 4 10 10 25°C 1 10 10−1 10−2 10−2 1 10 Cob VCB VCB = 10 V Ta = 25°C 200 100 −10 Emitter current IE (mA) SJJ00079BED 10−1 Collector current IC (A) 300 0 −1 Ta = −25°C 75°C fT I E Ta = 75°C 10−1 1 400 800 0 10−2 10−1 IC / IB = 10 Collector current IC (A) VCE = 2 V 1 000 400 25°C −25°C hFE IC 600 IC / IB = 25 10 Collector-emitter voltage VCE (V) 1 200 VBE(sat) IC 102 −102 Collector output capacitance C (pF) (Common base, input open circuited) ob 1.0 102 Base-emitter saturation voltage VBE(sat) (V) Ta = 25°C IB = 4.0 mA Collector current IC (A) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE 1.2 24 f = 1 MHz IE = 0 Ta = 25°C 20 16 12 8 4 0 1 10 Collector-base voltage VCB (V) 102 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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