BLF6G10LS-135R Power LDMOS transistor Rev. 01 — 17 November 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f VDS PL(AV) Gp ηD ACPR (MHz) (V) (W) (dB) (%) (dBc) 869 to 894 28 26.5 21.0 28.0 −39[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 950 mA: u Average output power = 26.5 W u Power gain = 21.0 dB u Efficiency = 28.0 % u ACPR = −39 dBc n Easy power control n Integrated ESD protection n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation (800 MHz to 1000 MHz) n Internally matched for ease of use n Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) BLF6G10LS-135R NXP Semiconductors Power LDMOS transistor 1.3 Applications n RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 800 MHz to 1000 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 Simplified outline Graphic symbol 1 1 3 [1] source 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name BLF6G10LS-135R - Description Version earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage −0.5 +13 V ID drain current - 32 A Tstg storage temperature −65 +150 °C Tj junction temperature - 225 °C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Rth(j-case) thermal resistance from junction to case Tcase = 80 °C; PL = 25 W 0.56 K/W BLF6G10LS-135R_1 Product data sheet Unit © NXP B.V. 2008. All rights reserved. Rev. 01 — 17 November 2008 2 of 10 BLF6G10LS-135R NXP Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.8 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 180 mA 1.4 1.9 2.4 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 950 mA 1.6 2.1 2.6 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 3 µA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 24 32 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 300 nA gfs forward transconductance VDS = 10 V; ID = 9 A 7 13 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 6.3 A - 0.1 - Ω Crs feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz - 2.0 - pF 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 871.5 MHz; f2 = 876.5 MHz; f3 = 886.5 MHz; f4 = 891.5 MHz; RF performance at VDS = 28 V; IDq = 950 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter PL(AV) average output power Conditions Min Typ Max Unit - 26.5 - W Gp power gain PL(AV) = 26.5 W 20.0 21.0 - dB RLin input return loss PL(AV) = 26.5 W - −11.0 −8.0 dB ηD drain efficiency PL(AV) = 26.5 W 26.0 28.0 - % ACPR adjacent channel power ratio PL(AV) = 26.5 W - −39 −36.5 dBc 7.1 Ruggedness in class-AB operation The BLF6G10LS-135R is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 950 mA; PL = 135 W; f = 894 MHz. BLF6G10LS-135R_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 17 November 2008 3 of 10 BLF6G10LS-135R NXP Semiconductors Power LDMOS transistor 001aah864 24 75 ηD (%) Gp (dB) 60 23 22 45 Gp 30 21 ηD 15 20 19 0 40 80 0 160 120 PL (W) VDS = 28 V; IDq = 950 mA; f = 881 MHz. Fig 1. One-tone CW power gain and drain efficiency as function of load power; typical values 001aah865 23 60 ηD (%) Gp (dB) 22 001aah866 −20 IMD (dBc) 45 −30 30 −40 IMD3 Gp IMD5 21 IMD7 ηD 20 15 19 0 25 50 0 75 100 PL(PEP) (W) −50 −60 0 VDS = 28 V; IDq = 950 mA; f1 = 881 MHz (±100 kHz). Fig 2. Two-tone CW power gain and drain efficiency as function of peak envelope load power; typical values 50 75 100 PL(PEP) (W) VDS = 28 V; IDq = 950 mA; f1 = 881 MHz (±100 kHz). Fig 3. Two-tone CW intermodulation distortion as a function of peak envelope load power; typical values BLF6G10LS-135R_1 Product data sheet 25 © NXP B.V. 2008. All rights reserved. Rev. 01 — 17 November 2008 4 of 10 BLF6G10LS-135R NXP Semiconductors Power LDMOS transistor 001aah867 24 ηD (%) Gp (dB) 23 40 22 30 001aah868 −20 50 ACPR (dBc) −30 Gp 20 21 −40 ηD 10 20 19 −50 0 0 12 24 36 48 60 PL(AV) (W) 0 40 60 PL(AV) (W) VDS = 28 V; IDq = 950 mA; f1 = 881 MHz; f2 = 886 MHz; carrier spacing 5 MHz. Fig 4. 20 2-carrier W-CDMA power gain and drain efficiency as function of average load power; typical values VDS = 28 V; IDq = 950 mA; f1 = 881 MHz; f2 = 886 MHz; carrier spacing 5 MHz. Fig 5. 2-carrier W-CDMA adjacent power channel ratio as a function of average load power; typical values 8. Test information VGG VDD C8 C3 R1 C9 C10 C11 C18 C20 R3 L1 C4 R2 C6 input 50 Ω C1 C17 C2 output 50 Ω C16 C7 C5 C12 C13 C14 C15 C19 001aah869 The drawing is not to scale. Fig 6. Test circuit for operation at 800 MHz BLF6G10LS-135R_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 17 November 2008 5 of 10 BLF6G10LS-135R NXP Semiconductors Power LDMOS transistor C18 C8 C9 C20 L1 R1 R3 C10 C11 Q1 C4 C3 C6 R2 C17 C1 C2 C7 C5 C19 C16 C14 C15 C12 C13 IN 800 -1000 MHz V1.0 OUT 800 -1000 MHz V1.0 001aah870 The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 8 for list of components. The drawing is not to scale. Fig 7. Component layout Table 8. List of components (see Figure 6 and 7). Component Description Value Remarks C1, C3, C10, C14, C17 multilayer ceramic chip capacitor 68 pF [1] C2, C4, C5 multilayer ceramic chip capacitor 8.2 pF [1] solder vertically 10 pF [1] solder vertically C6, C7 multilayer ceramic chip capacitor C8, C9, C12, C13 electrolytic capacitor 100 nF C11, C15 multilayer ceramic chip capacitor 4.7 µF; 50 V [2] C16 multilayer ceramic chip capacitor 3.0 pF [1] C18, C19, C20 electrolytic capacitor 220 µF; 63 V L1 ferrite SMD bead Q1 BLF6G10LS-135R R1, R2, R3 SMD resistor Vishay or capacitor of same quality. solder vertically Ferroxcube BDS 3/3/4.6-4S2 or equivalent 9.1 Ω; 0.1 W [1] American Technical Ceramics type 100B or capacitor of same quality. [2] TDK or capacitor of same quality. BLF6G10LS-135R_1 Product data sheet solder vertically © NXP B.V. 2008. All rights reserved. Rev. 01 — 17 November 2008 6 of 10 BLF6G10LS-135R NXP Semiconductors Power LDMOS transistor 9. Package outline Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 8. 0.390 0.010 0.380 Package outline SOT502B BLF6G10LS-135R_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 17 November 2008 7 of 10 BLF6G10LS-135R NXP Semiconductors Power LDMOS transistor 10. Abbreviations Table 9. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CDMA Code Division Multiple Access CW Continuous Wave DPCH Dedicated Physical CHannel EDGE Enhanced Data rates for GSM Evolution GSM Global System for Mobile communications LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency VSWR Voltage Standing-Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G10LS-135R_1 20081117 Product data sheet - - BLF6G10LS-135R_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 17 November 2008 8 of 10 BLF6G10LS-135R NXP Semiconductors Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF6G10LS-135R_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 17 November 2008 9 of 10 BLF6G10LS-135R NXP Semiconductors Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 17 November 2008 Document identifier: BLF6G10LS-135R_1