PHILIPS SSTUH32865ET/G

SSTUH32865
1.8 V 28-bit high output drive 1:2 registered buffer with parity
for DDR2 RDIMM applications
Rev. 01 — 11 March 2005
Product data sheet
1. General description
The SSTUH32865 is a 1.8 V 28-bit high output drive 1:2 register specifically designed for
use on two rank by four (2R × 4) and similar high-density Double Data Rate 2 (DDR2)
memory modules. It is similar in function to the JEDEC-standard 14-bit DDR2 register, but
integrates the functionality of the normally required two registers in a single package,
thereby freeing up board real-estate and facilitating routing to accommodate high-density
Dual In-line Memory Module (DIMM) designs.
The SSTUH32865 also integrates a parity function, which accepts a parity bit from the
memory controller, compares it with the data received on the D-inputs and indicates
whether a parity error has occurred on its open-drain PTYERR pin (active LOW).
The SSTUH32865 is packaged in a 160-ball, 12 × 18 grid, 0.65 mm ball pitch, thin profile
fine-pitch ball grid array (TFBGA) package, which—while requiring a minimum
9 mm × 13 mm of board space—allows for adequate signal routing and escape using
conventional card technology.
The SSTUH32865 is identical to SSTU32865 in function and performance, with
higher-drive outputs optimized to drive heavy load nets (such as stacked DRAMs) while
maintaining speed and signal integrity.
2. Features
■ 28-bit data register supporting DDR2
■ Higher output drive strength version of SSTU32865 optimized for high-capacitive load
nets
■ Fully compliant to JEDEC standard JESD82-9
■ Supports 2 rank by 4 DIMM density by integrating equivalent functionality of two
JEDEC-standard DDR2 registers (that is, 2 × SSTU32864 or 2 × SSTU32866)
■ Parity checking function across 22 input data bits
■ Parity out signal
■ Controlled output impedance drivers enable optimal signal integrity and speed
■ Exceeds JESD82-9 speed performance (1.8 ns max. single-bit switching propagation
delay, 2.0 ns max. mass-switching)
■ Supports up to 450 MHz clock frequency of operation
■ Optimized pinout for high-density DDR2 module design
■ Chip-selects minimize power consumption by gating data outputs from changing state
■ Supports Stub Series Terminated Logic SSTL_18 data inputs
■ Differential clock (CK and CK) inputs
SSTUH32865
Philips Semiconductors
1.8 V high output drive DDR registered buffer with parity
■ Supports Low Voltage Complementary Metal Oxide Silicon (LVCMOS) switching levels
on the control and RESET inputs
■ Single 1.8 V supply operation
■ Available in 160-ball 9 mm × 13 mm, 0.65 mm ball pitch TFBGA package
3. Applications
■ High-density (for example, 2 rank by 4) DDR2 registered DIMMs
■ DDR2 Registered DIMMs (RDIMM) desiring parity checking functionality
■ Stacked or planar high-DRAM count registered DIMMs
4. Ordering information
Table 1:
Ordering information
Type number
Solder process
Package
Name
Description
Version
SSTUH32865ET/G Pb-free (SnAgCu solder ball TFBGA160
compound)
plastic thin fine-pitch ball grid array package; SOT802-1
160 balls; body 9 × 13 × 0.8 mm
SSTUH32865ET
plastic thin fine-pitch ball grid array package; SOT802-1
160 balls; body 9 × 13 × 0.8 mm
SnPb solder ball compound
TFBGA160
9397 750 14136
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 11 March 2005
2 of 28
SSTUH32865
Philips Semiconductors
1.8 V high output drive DDR registered buffer with parity
5. Functional diagram
(CS ACTIVE)
VREF
PARITY
GENERATOR
AND
CHECKER
D Q
PARIN
22
R
SSTUH32865
PTYERR
Q0A
D Q
D0
Q0B
R
Q21A
D Q
D21
Q21B
R
QCS0A
DCS0
D Q
QCS0B
R
CSGATEEN
QCS1A
DCS1
D Q
QCS1B
R
DCKE0,
DCKE1
2
D Q
2
QCKE0B,
QCKE1B
R
DODT0,
DODT1
2
D Q
QCKE0A,
QCKE1A
2
QODT0A,
QODT1A
QODT0B,
QODT1B
R
RESET
002aab111
CK
CK
Fig 1. Functional diagram of SSTUH32865
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Product data sheet
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Rev. 01 — 11 March 2005
3 of 28
SSTUH32865
Philips Semiconductors
1.8 V high output drive DDR registered buffer with parity
6. Pinning information
6.1 Pinning
SSTUH32865ET/G
SSTUH32865ET
ball A1
index area
2
1
4
3
6
5
8
7
9
10 12
11
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
002aab112
Transparent top view
Fig 2. Pin configuration for TFBGA160
9397 750 14136
Product data sheet
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Rev. 01 — 11 March 2005
4 of 28
SSTUH32865
Philips Semiconductors
1.8 V high output drive DDR registered buffer with parity
1
2
3
4
5
6
7
8
9
10
11
12
A
VREF
n.c.
PARIN
n.c.
n.c.
QCKE1A
QCKE0A
Q21A
Q19A
Q18A
Q17B
Q17A
B
D1
D2
n.c.
n.c.
n.c.
QCKE1B
QCKE0B
Q21B
Q19B
Q18B
QODT0B
QODT0A
C
D3
D4
QODT1B
QODT1A
D
D6
D5
VDDL
GND
n.c.
n.c.
GND
GND
Q20B
Q20A
E
D7
D8
VDDL
GND
VDDL
VDDR
GND
GND
Q16B
Q16A
F
D11
D9
VDDL
GND
VDDR
VDDR
Q1B
Q1A
G
D18
D12
VDDL
GND
VDDR
VDDR
Q2B
Q2A
H
CSGATEEN
D15
VDDL
GND
GND
GND
Q5B
Q5A
J
CK
DCS0
GND
GND
VDDR
VDDR
QCS0B
QCS0A
K
CK
DCS1
VDDL
VDDL
GND
GND
QCS1B
QCS1A
L
RESET
D14
GND
GND
VDDR
VDDR
Q6B
Q6A
M
D0
D10
GND
GND
GND
GND
Q10B
Q10A
N
D17
D16
VDDL
VDDL
VDDR
VDDR
Q9B
Q9A
P
D19
D21
GND
VDDL
VDDL
VDDR
VDDR
GND
Q11B
Q11A
R
D13
D20
GND
VDDL
VDDL
GND
GND
GND
Q15B
Q15A
T
DODT1
DODT0
Q14B
Q14A
U
DCKE0
DCKE1
m.c.l.
PTYERR
m.c.h.
Q3B
Q12B
Q7B
Q4B
Q13B
Q0B
Q8B
V
VREF
m.c.l.
m.c.l.
n.c.
m.c.h.
Q3A
Q12A
Q7A
Q4A
Q13A
Q0A
Q8A
002aab011
160-ball, 12 × 18 grid; top view.
An empty cell indicates no ball is populated at that grid point.
n.c. denotes a no-connect (ball present but not connected to the die).
m.c.l. denotes a pin that must be connected LOW.
m.c.h. denotes a pin that must be connected HIGH.
Fig 3. Ball mapping
9397 750 14136
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 11 March 2005
5 of 28
SSTUH32865
Philips Semiconductors
1.8 V high output drive DDR registered buffer with parity
6.2 Pin description
Table 2:
Pin description
Symbol
Pin
Type
Description
DCKE0, DCKE1
U1, U2
SSTL_18
DRAM function pins not associated with Chip Select.
DODT0, DODT1
T2, T1
Ungated inputs
Chip Select gated inputs
D0 to D21
M1, B1, B2, C1, C2, D2, D1, SSTL_18
E1, E2, F2, M2, F1, G2, R1,
L2, H2, N2, N1, G1, P1, R2,
P2
DRAM inputs, re-driven only when Chip Select is LOW.
J2, K2
DRAM Chip Select signals. These pins initiate DRAM
address/command decodes, and as such at least one will
be LOW when a valid address/command is present. The
register can be programmed to re-drive all D-inputs only
(CSGATEEN = HIGH) when at least one Chip Select
input is LOW.
Chip Select inputs
DCS0, DCS1
SSTL_18
Re-driven outputs
Q0A to Q21A
V11, F12, G12, V6, V9, H12, SSTL_18
L12, V8, V12, N12, M12,
P12, V7, V10, T12, R12,
E12, A12, A10, A9, D12, A8
Q0B to Q21B
U11, F11, G11, U6, U9,
H11, L11, U8, U12, N11,
M11, P11, U7, U10, T11,
R11, E11, A11, B10, B9,
D11, B8
QCS0A, QDS1A,
QCS0B, QCS1B
J12, K12, J11, K11
QCKE0A, QCKE1A,
QCKE0B, QCKE1B
A7, A6, B7, B6
Outputs of the register, valid after the specified clock
count and immediately following a rising edge of the
clock.
QODT0A, QODT1A, B12, C12, B11, C11
QODT0B, QODT1B
Parity input
PARIN
A3
SSTL_18
Parity input for the D0 to D21 inputs. Arrives one clock
cycle after the corresponding data input.
U4
open drain
When LOW, this output indicates that a parity error was
identified associated with the address and/or command
inputs. PTYERR will be active for two clock cycles, and
delayed by an additional clock cycle for compatibility with
final parity out timing on the industry-standard DDR2
register with parity (in JEDEC definition).
H1
1.8 V
LVCMOS
Chip Select Gate Enable. When HIGH, the D0 to D21
inputs will be latched only when at least one Chip Select
input is LOW during the rising edge of the clock. When
LOW, the D0 to D21 inputs will be latched and redriven
on every rising edge of the clock.
Parity error
PTYERR
Program inputs
CSGATEEN
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Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 11 March 2005
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SSTUH32865
Philips Semiconductors
1.8 V high output drive DDR registered buffer with parity
Table 2:
Pin description …continued
Symbol
Pin
Type
Description
J1, K1
SSTL_18
Differential master clock input pair to the register. The
register operation is triggered by a rising edge on the
positive clock input (CK).
Clock inputs
CK, CK
Miscellaneous inputs
m.c.l.
U3, V2, V3
Must be connected to a logic LOW
m.c.h.
U5, V5
Must be connected to a logic HIGH.
RESET
L1
1.8 V
LVCMOS
Asynchronous reset input. When LOW, it causes a reset
of the internal latches, thereby forcing the outputs LOW.
RESET also resets the PTYERR signal.
VREF
A1, V1
0.9 V
nominal
Input reference voltage for the SSTL_18 inputs. Two pins
(internally tied together) are used for increased reliability.
VDDL
D4, E4, E6, F4, G4, H4, K4,
K5, N4, N5, P5, P6, R5, R6
power supply voltage
VDDR
E7, F8, F9, G8, G9, J8, J9,
L8, L9, N8, N9, P7, P8
power supply voltage
GND
D5, D8, D9, E5, E8, E9, F5,
G5, H5, H8, H9, J4, J5, K8,
K9, L4, L5, M4, M5, M8, M9,
P4, P9, R4, R7, R8, R9
ground
n.c.
A2, A4, A5, B3, B4, B5, D6,
D7, V4
ball present but not connected to die
9397 750 14136
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 11 March 2005
7 of 28
SSTUH32865
Philips Semiconductors
1.8 V high output drive DDR registered buffer with parity
7. Functional description
7.1 Function table
Table 3:
Function table (each flip-flop)
Outputs [1]
Inputs
RESET
DCS0
DCS1
CSGATEEN
CK
CK
Dn, DODTn,
DCKEn
Qn
QCS0
QCS1
QODTn,
QCKEn
H
L
L
X
↑
↓
L
L
L
L
L
H
L
L
X
↑
↓
H
H
L
L
H
H
L
L
X
L or H
L or H
X
Q0
Q0
Q0
Q0
[1]
H
L
H
X
↑
↓
L
L
L
H
L
H
L
H
X
↑
↓
H
H
L
H
H
H
L
H
X
L or H
L or H
X
Q0
Q0
Q0
Q0
H
H
L
X
↑
↓
L
L
H
L
L
H
H
L
X
↑
↓
H
H
H
L
H
H
H
L
X
L or H
L or H
X
Q0
Q0
Q0
Q0
H
H
H
L
↑
↓
L
L
H
H
L
H
H
H
L
↑
↓
H
H
H
H
H
H
H
H
L
L or H
L or H
X
Q0
Q0
Q0
Q0
H
H
H
H
↑
↓
L
Q0
H
H
L
H
H
H
H
↑
↓
H
Q0
H
H
H
H
H
H
H
L or H
L or H
X
Q0
Q0
Q0
Q0
L
X or
floating
X or
floating
X or floating
X or
floating
X or
floating
X or floating
L
L
L
L
Q0 is the previous state of the associated output.
Table 4:
Parity and standby function table
Inputs
[1]
Output
RESET
DCS0
DCS1
CK
CK
∑ of inputs = H
(D0 to D21)
PARIN [1]
H
L
H
↑
↓
even
L
H
H
L
H
↑
↓
odd
L
L
H
L
H
↑
↓
even
H
L
H
L
H
↑
↓
odd
H
H
H
H
L
↑
↓
even
L
H
H
H
L
↑
↓
odd
L
L
H
H
L
↑
↓
even
H
L
H
H
L
↑
↓
odd
H
H
H
H
H
↑
↓
X
X
PTYERR0
H
X
X
L or H
L or H
X
X
PTYERR0
L
X or floating
X or floating
X or floating
X or floating
X or floating
X or floating
H
PTYERR [2] [3]
PARIN arrives one clock cycle after the data to which it applies. All Dn inputs must be driven to a known state for parity to be calculated
correctly.
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SSTUH32865
Philips Semiconductors
1.8 V high output drive DDR registered buffer with parity
[2]
This condition assumes PTYERR is HIGH at the crossing of CK going HIGH and CK going LOW. If PTYERR is LOW, it stays latched
LOW for two clock cycles or until RESET is driven LOW.
CSGATEEN is ‘don’t care’ for PTYERR.
[3]
PTYERR0 is the previous state of output PTYERR.
7.2 Functional information
This 28-bit 1:2 registered buffer with parity is designed for 1.7 V to 1.9 V VDD operation.
All clock and data inputs are compatible with the JEDEC standard for SSTL_18. The
control inputs are LVCMOS. All outputs are 1.8 V CMOS drivers that have been optimized
to drive the DDR2 DIMM load.
The SSTUH32865 operates from a differential clock (CK and CK). Data are registered at
the crossing of CK going HIGH, and CK going LOW.
The device supports low-power standby operation. When the reset input (RESET) is LOW,
the differential input receivers are disabled, and undriven (floating) data, clock and
reference voltage (VREF) inputs are allowed. In addition, when RESET is LOW all registers
are reset, and all outputs except PTYERR are forced LOW. The LVCMOS RESET input
must always be held at a valid logic HIGH or LOW level.
To ensure defined outputs from the register before a stable clock has been supplied,
RESET must be held in the LOW state during power-up.
In the DDR2 RDIMM application, RESET is specified to be completely asynchronous with
respect to CK and CK. Therefore, no timing relationship can be guaranteed between the
two. When entering reset, the register will be cleared and the data outputs will be driven
LOW quickly, relative to the time to disable the differential input receivers. However, when
coming out of reset, the register will become active quickly, relative to the time to enable
the differential input receivers. As long as the data inputs are LOW, and the clock is stable
during the time from the LOW-to-HIGH transition of RESET until the input receivers are
fully enabled, the design of the SSTUH32865 ensures that the outputs remain LOW, thus
ensuring no glitches on the output.
The device monitors both DCS0 and DCS1 inputs and will gate the Qn outputs from
changing states when both DCS0 and DCS1 are HIGH. If either DCS0 or DCS1 input is
LOW, the Qn outputs will function normally. The RESET input has priority over the DCS0
and DCS1 control and will force the Qn outputs LOW and the PTYERR output HIGH. If the
DCSn-control functionality is not desired, then the CSGATEEN input can be hardwired to
ground, in which case, the setup-time requirement for DCSn would be the same as for the
other Dn data inputs.
The SSTUH32865 includes a parity checking function. The SSTUH32865 accepts a parity
bit from the memory controller at its input pin PARIN, compares it with the data received
on the Dn inputs (with either DCS0 or DCS1 active) and indicates whether a parity error
has occurred on its open-drain PTYERR pin (active LOW).
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Product data sheet
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Rev. 01 — 11 March 2005
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SSTUH32865
Philips Semiconductors
1.8 V high output drive DDR registered buffer with parity
7.3 Functional differences to SSTU32864
The SSTUH32865 for its basic register functionality, signal definition and performance is
based upon the industry-standard SSTU32864, but provides key operational features
which differ (at least in part) from the industry-standard register in the following aspects:
7.3.1 Chip Select (CS) gating of key inputs (DCS0, DCS1, CSGATEEN)
As a means to reduce device power, the internal latches will only be updated when one or
both of the CS inputs are active (LOW) and CSGATEEN HIGH at the rising edge of the
clock. The 22 ‘Chip-Select-gated’ input signals associated with this function include
addresses (ADDR0 to ADDR15, BA0 to BA2), and RAS, CAS, WE, with the remaining
signals (CS, CKE, ODT) continuously re-driven at the rising edge of every clock as they
are independent of CS. The CS gating function can be disabled by tying CSGATEEN
LOW, enabling all internal latches to be updated on every rising edge of the clock.
Table 5:
Mode
Gating
Chip Select gating mode
Signal name
Description
CSGATEEN
Registers only re-drive signals to the DRAMs when
Chip Select inputs are LOW.
HIGH
Non-gating
CSGATEEN
LOW
Registers always re-drive signals on every clock cycle,
independent of the state of the Chip Select inputs.
7.3.2 Parity error checking and reporting
The SSTUH32865 incorporates a parity function, whereby the signal received on input pin
PARIN is received as parity to the register, one clock cycle later than the CS-gated inputs.
The received parity bit is then compared to the parity calculated across these same inputs
by the register parity logic to verify that the information has not been corrupted. The 22
CS-gated input signals will be latched and re-driven on the first clock, and any error will be
reported one clock cycle later via the PTYERR output pin (driven LOW for two consecutive
clock cycles). PTYERR is an open-drain output, allowing multiple modules to share a
common signal pin for reporting the occurrence of a parity error during a valid command
cycle (coincident with the re-driven signals). This output is driven LOW for two consecutive
clock cycles to allow the memory controller sufficient time to sense and capture the error
even. A LOW state on PTYERR indicates that a parity error has occurred.
7.3.3 Reset (RESET)
Similar to the RESET pin on the industry-standard SSTU32864, this pin is used to clear all
internal latches and all outputs will be driven LOW quickly except the PTYERR output,
which will be floated (and will normally default HIGH by their external pull-up).
7.3.4 Power-up sequence
The reset function for the SSTUH32865 is similar to that of the SSTU32864 except that
the PTYERR signal is also cleared and will be held clear (HIGH) for three consecutive
clock cycles.
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Rev. 01 — 11 March 2005
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SSTUH32865
Philips Semiconductors
1.8 V high output drive DDR registered buffer with parity
RESET
DCSn
m
m+1
m+2
m+3
m+4
CK
CK
tACT
tsu
th
Dn (1)
tPDM, tPDMSS
CK to Q
Qn
tsu
th
PARIN
tPHL
tPHL, tPLH
CK to PTYERR
CK to PTYERR
PTYERR
002aaa983
HIGH, LOW, or Don't care
HIGH or LOW
(1) After RESET is switched from LOW to HIGH, all data and PARIN input signals must be set and held LOW for a minimum
time of tACT(max) to avoid false error.
Fig 4. RESET switches from LOW to HIGH
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Product data sheet
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Rev. 01 — 11 March 2005
11 of 28
SSTUH32865
Philips Semiconductors
1.8 V high output drive DDR registered buffer with parity
RESET
DCSn
m+1
m
m+2
m+3
m+4
CK
CK
tsu
th
Dn (1)
tPDM, tPDMSS
CK to Q
Qn
tsu
th
PARIN
tPHL, tPLH
CK to PTYERR
PTYERR
Unknown input event
Output signal is dependent
on the prior unknown event
002aaa984
HIGH or LOW
Fig 5. RESET being held HIGH
9397 750 14136
Product data sheet
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Rev. 01 — 11 March 2005
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SSTUH32865
Philips Semiconductors
1.8 V high output drive DDR registered buffer with parity
RESET
tINACT
DCSn
CK (1)
CK (1)
Dn (1)
tRPHL
RESET to Q
Qn
PARIN (1)
tRPLH
RESET to PTYERR
PTYERR
002aaa985
HIGH, LOW, or Don't care
HIGH or LOW
(1) After RESET is switched from HIGH to LOW, all data and clock input signals must be set and held at valid logic levels (not
floating) for a minimum time of tINACT(max).
Fig 6. RESET switches from HIGH to LOW
9397 750 14136
Product data sheet
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Rev. 01 — 11 March 2005
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SSTUH32865
Philips Semiconductors
1.8 V high output drive DDR registered buffer with parity
22
Dn
D Q
22
QnA
QnB
D
PARIN
D
PTYERR
LATCHING AND
RESET FUNCTION(1)
D
CLOCK
002aaa417
(1) This function holds the error for two cycles. For details, see Section 7 “Functional description” and Figure 4 “RESET
switches from LOW to HIGH”.
Fig 7. Parity logic diagram
9397 750 14136
Product data sheet
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Rev. 01 — 11 March 2005
14 of 28
SSTUH32865
Philips Semiconductors
1.8 V high output drive DDR registered buffer with parity
8. Limiting values
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDD
supply voltage
Conditions
Min
Max
Unit
V
−0.5
+2.5
−0.5
+2.5
V
−0.5
VDD + 0.5
V
VI
receiver input voltage
[2]
VO
driver output voltage
[2]
IIK
input clamp current
VI < 0 V or VI > VDD
-
−50
mA
IOK
output clamp current
VO < 0 V or VO > VDD
-
±50
mA
IO
continuous output current
0 V < VO < VDD
-
±50
mA
ICCC
continuous current through
each VDD or GND pin
-
±100
mA
Tstg
storage temperature
−65
+150
°C
Vesd
electrostatic discharge
voltage
Human Body Model (HBM); 1.5 kΩ;
100 pF
2
-
kV
Machine Model (MM); 0 Ω; 200 pF
200
-
V
[1]
Stresses beyond those listed under ‘absolute maximum ratings’ may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under ‘recommended operating
conditions’ is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
[2]
The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed.
9. Recommended operating conditions
Table 7:
Recommended operating conditions
Symbol
Parameter
Min
Typ
Max
Unit
VDD
supply voltage
1.7
-
1.9
V
VREF
reference voltage
0.49 × VDD
0.50 × VDD
0.51 × VDD
V
VTT
termination voltage
VREF − 40 mV
VREF
VREF + 40 mV
V
VI
input voltage
VIH(AC)
AC HIGH-level input voltage
VIL(AC)
VIH(DC)
AC LOW-level input voltage
DC HIGH-level input voltage
Conditions
0
-
VDD
V
data inputs (Dn)
[1]
VREF + 250 mV
-
-
V
data inputs (Dn)
[1]
-
-
VREF − 250 mV
V
data inputs (Dn)
[1]
VREF + 125 mV
-
-
V
VIL(DC)
DC LOW-level input voltage
data inputs (Dn)
[1]
-
-
VREF − 125 mV
V
VIH
HIGH-level input voltage
RESET
[2]
0.65 × VDD
-
-
V
VIL
LOW-level input voltage
RESET
[2]
-
-
0.35 × VDD
V
VICR
common mode input voltage
range
CK, CK
0.675
-
1.125
V
VID
differential input voltage
CK, CK
600
-
-
mV
IOH
HIGH-level output current
-
-
−12
mA
IOL
LOW-level output current
-
-
12
mA
Tamb
operating ambient temperature
in free air
0
-
+70
°C
[1]
The differential inputs must not be floating, unless RESET is LOW.
[2]
The RESET input of the device must be held at valid logic levels (not floating) to ensure proper device operation.
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10. Characteristics
Table 8:
Characteristics
Over recommended operating conditions, unless otherwise noted.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VOH
HIGH-level output voltage
IOH = −12 mA; VDD = 1.7 V
1.2
-
-
V
VOL
LOW-level output voltage
IOL = 12 mA; VDD = 1.7 V
-
-
0.5
V
II
input current
all inputs; VI = VDD or GND;
VDD = 1.9 V
-
-
±5
µA
IDD
static standby current
RESET = GND; VDD = 1.9 V
-
-
100
µA
static operating current
RESET = VDD; VDD = 1.9 V;
VI = VIH(AC) or VIL(AC)
-
-
40
mA
dynamic operating current per MHz, RESET = VDD;
clock only
VI = VIH(AC) or VIL(AC); CK and CK
switching at 50 % duty cycle.
IO = 0 mA; VDD = 1.8 V
-
16
-
µA
dynamic operating current per MHz, RESET = VDD;
per each data input
VI = VIH(AC) or VIL(AC); CK and CK
switching at 50 % duty cycle. One
data input switching at half clock
frequency, 50 % duty cycle.
IO = 0 mA; VDD = 1.8 V
-
19
-
µA
IDDD
Ci
input capacitance, data inputs
VI = VREF ± 250 mV; VDD = 1.8 V
2.5
-
3.5
pF
input capacitance, CK and CK
VICR = 0.9 V; VID = 600 mV;
VDD = 1.8 V
2
-
3
pF
input capacitance, RESET
VI = VDD or GND; VDD = 1.8 V
3
-
5
pF
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Table 9:
Timing requirements
Over recommended operating conditions, unless otherwise noted.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fclock
clock frequency
-
-
450
MHz
tW
pulse duration, CK, CK HIGH or
LOW
1
-
-
ns
tACT
differential inputs active time
[1] [2]
-
-
10
ns
tINACT
differential inputs inactive time
[1] [3]
-
-
15
ns
tsu
setup time, Chip Select
DCS0, DCS1 valid before
clock switching
0.7
-
-
ns
setup time, Data
Dn valid before clock
switching
0.5
-
-
ns
setup time, PARIN
PARIN before CK and CK
0.5
-
-
ns
hold time
input to remain valid after
clock switching
0.5
-
-
ns
hold time, PARIN
PARIN after CK and CK
0.5
-
-
ns
th
[1]
This parameter is not necessarily production tested.
[2]
Data inputs must be active below a minimum time of tACT(max) after RESET is taken HIGH.
[3]
Data and clock inputs must be held at valid levels (not floating) a minimum time of tINACT(max) after RESET is taken LOW.
Table 10: Switching characteristics
Over recommended operating conditions, unless otherwise noted.
Symbol
Parameter
fMAX
maximum input clock frequency
Conditions
tPDM
propagation delay
CK and CK to output
[1]
Min
Typ
Max
Unit
450
-
-
MHz
1.41
-
1.8
ns
tLH
LOW-to-HIGH delay
CK and CK to PTYERR
1.2
-
3
ns
tHL
HIGH-to-LOW delay
CK and CK to PTYERR
1
-
3
ns
tPLH
LOW-to-HIGH propagation delay
from RESET to PTYERR
-
-
3
ns
-
-
2.0
ns
-
-
3
ns
tPDMSS
propagation delay, simultaneous
switching
CK and CK to output
tPHL
propagation delay
RESET to output
[1]
Includes 350 ps of test-load transmission line delay.
[2]
This parameter is not necessarily production tested.
[1] [2]
Table 11: Output edge rates
Over recommended operating conditions, unless otherwise noted.
Symbol
Parameter
Min
Typ
Max
Unit
dV/dt_r
rising edge slew rate
Conditions
1
-
4
V/ns
dV/dt_f
falling edge slew rate
1
-
4
V/ns
dV/dt_∆
absolute difference between dV/dt_r
and dV/dt_f
-
-
1
V/ns
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11. Test information
11.1 Test circuit
All input pulses are supplied by generators having the following characteristics: Pulse
Repetition Rate (PRR) ≤ 10 MHz; Z0 = 50 Ω; input slew rate = 1 V/ns ± 20 %, unless
otherwise specified.
The outputs are measured one at a time with one transition per measurement.
VDD
DUT
TL = 50 Ω
RL = 1000 Ω
TL = 350 ps, 50 Ω
CK
CK
CK inputs
OUT
CL = 45 pF(1)
RL = 1000 Ω
test point
RL = 100 Ω
002aab113
test point
(1) CL includes probe and jig capacitance.
Fig 8. Load circuit
LVCMOS
VDD
RESET
VDD/2
VDD/2
0V
tINACT
tACT
90 %
IDD(1)
10 %
002aaa372
(1) IDD tested with clock and data inputs held at VDD or GND, and IO = 0 mA.
Fig 9. Voltage and current waveforms; inputs active and inactive times
tW
VIH
input
VICR
VICR
VID
VIL
002aaa373
VID = 600 mV
VIH = VREF + 250 mV (AC voltage levels) for differential inputs. VIH = VDD for LVCMOS inputs.
VIL = VREF − 250 mV (AC voltage levels) for differential inputs. VIL = GND for LVCMOS inputs.
Fig 10. Voltage waveforms; pulse duration
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CK
VICR
VID
CK
tsu
th
VIH
input
VREF
VREF
VIL
002aaa374
VID = 600 mV
VREF = VDD/2
VIH = VREF + 250 mV (AC voltage levels) for differential inputs. VIH = VDD for LVCMOS inputs.
VIL = VREF − 250 mV (AC voltage levels) for differential inputs. VIL = GND for LVCMOS inputs.
Fig 11. Voltage waveforms; setup and hold times
CK
VICR
VICR
tPLH
tPHL
Vi(p-p)
CK
VOH
VTT
output
002aaa375
VOL
tPLH and tPHL are the same as tPD.
Fig 12. Voltage waveforms; propagation delay times (clock to output)
LVCMOS
VIH
RESET
VDD/2
VIL
tPHL
VOH
output
VTT
002aaa376
VOL
tPLH and tPHL are the same as tPD.
VIH = VREF + 250 mV (AC voltage levels) for differential inputs. VIH = VDD for LVCMOS inputs.
VIL = VREF − 250 mV (AC voltage levels) for differential inputs. VIL = GND for LVCMOS inputs.
Fig 13. Voltage waveforms; propagation delay times (reset to output)
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11.2 Output slew rate measurement
VDD = 1.8 V ± 0.1 V.
All input pulses are supplied by generators having the following characteristics:
PRR ≤ 10 MHz; Z0 = 50 Ω; input slew rate = 1 V/ns ± 20 %, unless otherwise specified.
VDD
DUT
RL = 50 Ω
OUT
test point
CL = 15
pF(1)
002aab117
(1) CL includes probe and jig capacitance.
Fig 14. Load circuit, HIGH-to-LOW slew measurement
output
VOH
80 %
dv_f
20 %
dt_f
002aaa378
VOL
Fig 15. Voltage waveforms, HIGH-to-LOW slew rate measurement
DUT
OUT
test point
CL = 15 pF(1)
RL = 50 Ω
002aab118
(1) CL includes probe and jig capacitance.
Fig 16. Load circuit, LOW-to-HIGH slew measurement
dt_r
VOH
80 %
dv_r
20 %
output
002aaa380
VOL
Fig 17. Voltage waveforms, LOW-to-HIGH slew rate measurement
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1.8 V high output drive DDR registered buffer with parity
11.3 Error output load circuit and voltage measurement
VDD = 1.8 V ± 0.1 V.
All input pulses are supplied by generators having the following characteristics:
PRR ≤ 10 MHz; Z0 = 50 Ω; input slew rate = 1 V/ns ± 20 %, unless otherwise specified.
VDD
DUT
RL = 1 kΩ
OUT
test point
CL = 10 pF(1)
002aaa500
(1) CL includes probe and jig capacitance.
Fig 18. Load circuit, error output measurements
LVCMOS
RESET
VCC
VCC/2
0V
tPLH
VOH
0.15 V
output
waveform 2
002aaa501
0V
Fig 19. Voltage waveforms, open-drain output LOW-to-HIGH transition time with respect to
RESET input
timing
inputs
VICR
Vi(p-p)
VICR
tHL
VCC
output
waveform 1
VCC/2
002aaa502
VOL
Fig 20. Voltage waveforms, open-drain output HIGH-to-LOW transition time with respect
to clock inputs
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1.8 V high output drive DDR registered buffer with parity
timing
inputs
VICR
Vi(p-p)
VICR
tLH
VOH
output
waveform 2
0.15 V
002aaa503
0V
Fig 21. Voltage waveforms, open-drain output LOW-to-HIGH transition time with respect to
clock inputs
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1.8 V high output drive DDR registered buffer with parity
12. Package outline
TFBGA160: plastic thin fine-pitch ball grid array package; 160 balls; body 9 x 13 x 0.8 mm
D
B
SOT802-1
A
ball A1
index area
E
A2
A
A1
detail X
C
e1
e
∅v M C A B
b
∅w M C
y
y1 C
1/2e
V
U
T
R
e
P
N
M
L
K
J
H
G
F
E
D
C
B
A
ball A1
index area
e2
1/2e
1
2
3
4
5
6
7
9
8
10
11
12
X
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
b
D
E
e
e1
e2
v
w
y
y1
mm
1.2
0.35
0.25
0.85
0.75
0.45
0.35
9.1
8.9
13.1
12.9
0.65
7.15
11.05
0.15
0.08
0.1
0.1
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
JEITA
SOT802-1
---
---
---
EUROPEAN
PROJECTION
ISSUE DATE
03-01-29
Fig 22. Package outline SOT802-1 (TFBGA160)
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13. Soldering
13.1 Introduction to soldering surface mount packages
This text gives a very brief insight to a complex technology. A more in-depth account of
soldering ICs can be found in our Data Handbook IC26; Integrated Circuit Packages
(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface mount IC packages. Wave
soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch
SMDs. In these situations reflow soldering is recommended.
13.2 Reflow soldering
Reflow soldering requires solder paste (a suspension of fine solder particles, flux and
binding agent) to be applied to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement. Driven by legislation and
environmental forces the worldwide use of lead-free solder pastes is increasing.
Several methods exist for reflowing; for example, convection or convection/infrared
heating in a conveyor type oven. Throughput times (preheating, soldering and cooling)
vary between 100 seconds and 200 seconds depending on heating method.
Typical reflow peak temperatures range from 215 °C to 270 °C depending on solder paste
material. The top-surface temperature of the packages should preferably be kept:
• below 225 °C (SnPb process) or below 245 °C (Pb-free process)
– for all BGA, HTSSON..T and SSOP..T packages
– for packages with a thickness ≥ 2.5 mm
– for packages with a thickness < 2.5 mm and a volume ≥ 350 mm3 so called
thick/large packages.
• below 240 °C (SnPb process) or below 260 °C (Pb-free process) for packages with a
thickness < 2.5 mm and a volume < 350 mm3 so called small/thin packages.
Moisture sensitivity precautions, as indicated on packing, must be respected at all times.
13.3 Wave soldering
Conventional single wave soldering is not recommended for surface mount devices
(SMDs) or printed-circuit boards with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering method was specifically
developed.
If wave soldering is used the following conditions must be observed for optimal results:
• Use a double-wave soldering method comprising a turbulent wave with high upward
pressure followed by a smooth laminar wave.
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be
parallel to the transport direction of the printed-circuit board;
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– smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the
transport direction of the printed-circuit board.
The footprint must incorporate solder thieves at the downstream end.
• For packages with leads on four sides, the footprint must be placed at a 45° angle to
the transport direction of the printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must be fixed with a droplet of
adhesive. The adhesive can be applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the adhesive is cured.
Typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250 °C
or 265 °C, depending on solder material applied, SnPb or Pb-free respectively.
A mildly-activated flux will eliminate the need for removal of corrosive residues in most
applications.
13.4 Manual soldering
Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage
(24 V or less) soldering iron applied to the flat part of the lead. Contact time must be
limited to 10 seconds at up to 300 °C.
When using a dedicated tool, all other leads can be soldered in one operation within
2 seconds to 5 seconds between 270 °C and 320 °C.
13.5 Package related soldering information
Table 12:
Suitability of surface mount IC packages for wave and reflow soldering methods
Package [1]
Soldering method
Wave
Reflow [2]
BGA, HTSSON..T [3], LBGA, LFBGA, SQFP,
SSOP..T [3], TFBGA, VFBGA, XSON
not suitable
suitable
DHVQFN, HBCC, HBGA, HLQFP, HSO, HSOP,
HSQFP, HSSON, HTQFP, HTSSOP, HVQFN,
HVSON, SMS
not suitable [4]
suitable
PLCC [5], SO, SOJ
suitable
suitable
not
recommended [5] [6]
suitable
SSOP, TSSOP, VSO, VSSOP
not
recommended [7]
suitable
CWQCCN..L [8], PMFP [9], WQCCN..L [8]
not suitable
LQFP, QFP, TQFP
[1]
For more detailed information on the BGA packages refer to the (LF)BGA Application Note (AN01026);
order a copy from your Philips Semiconductors sales office.
[2]
All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the
maximum temperature (with respect to time) and body size of the package, there is a risk that internal or
external package cracks may occur due to vaporization of the moisture in them (the so called popcorn
effect). For details, refer to the Drypack information in the Data Handbook IC26; Integrated Circuit
Packages; Section: Packing Methods.
[3]
These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no
account be processed through more than one soldering cycle or subjected to infrared reflow soldering with
peak temperature exceeding 217 °C ± 10 °C measured in the atmosphere of the reflow oven. The package
body peak temperature must be kept as low as possible.
9397 750 14136
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[4]
These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the
solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink
on the top side, the solder might be deposited on the heatsink surface.
[5]
If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave
direction. The package footprint must incorporate solder thieves downstream and at the side corners.
[6]
Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
[7]
Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger
than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
[8]
Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered
pre-mounted on flex foil. However, the image sensor package can be mounted by the client on a flex foil by
using a hot bar soldering process. The appropriate soldering profile can be provided on request.
[9]
Hot bar soldering or manual soldering is suitable for PMFP packages.
14. Revision history
Table 13:
Revision history
Document ID
Release date
Data sheet status
Change notice
Doc. number
Supersedes
SSTUH32865_1
20050311
Product data sheet
-
9397 750 14136
-
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15. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
16. Definitions
17. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
18. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
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19. Contents
1
2
3
4
5
6
6.1
6.2
7
7.1
7.2
7.3
7.3.1
7.3.2
7.3.3
7.3.4
8
9
10
11
11.1
11.2
11.3
12
13
13.1
13.2
13.3
13.4
13.5
14
15
16
17
18
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3
Pinning information . . . . . . . . . . . . . . . . . . . . . . 4
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 6
Functional description . . . . . . . . . . . . . . . . . . . 8
Function table . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Functional information . . . . . . . . . . . . . . . . . . . 9
Functional differences to SSTU32864 . . . . . . 10
Chip Select (CS) gating of key inputs (DCS0,
DCS1, CSGATEEN) . . . . . . . . . . . . . . . . . . . . 10
Parity error checking and reporting. . . . . . . . . 10
Reset (RESET) . . . . . . . . . . . . . . . . . . . . . . . . 10
Power-up sequence . . . . . . . . . . . . . . . . . . . . 10
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 15
Recommended operating conditions. . . . . . . 15
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 16
Test information . . . . . . . . . . . . . . . . . . . . . . . . 18
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Output slew rate measurement. . . . . . . . . . . . 20
Error output load circuit and voltage
measurement . . . . . . . . . . . . . . . . . . . . . . . . . 21
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 23
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Introduction to soldering surface mount
packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 24
Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 24
Manual soldering . . . . . . . . . . . . . . . . . . . . . . 25
Package related soldering information . . . . . . 25
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 26
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 27
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Contact information . . . . . . . . . . . . . . . . . . . . 27
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 11 March 2005
Document number: 9397 750 14136
Published in The Netherlands