DISCRETE SEMICONDUCTORS DATA SHEET OM2070 Wideband amplifier module Product specification File under Discrete Semiconductors, SC16 1995 Nov 14 Philips Semiconductors Product specification Wideband amplifier module OM2070 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF and UHF applications. PINNING PIN DESCRIPTION 1 input 2 common 3 common 4 common 5 common 6 supply (+) 7 common 8 common 9 output/supply (+) pin 1 identification handbook, halfpage 1 9 8 7 6 5 4 3 2 1 MLA418 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL PARAMETER f frequency range CONDITIONS MIN. 40 TYP. − MAX. 860 UNIT MHz ZS, ZL source and load impedance − 75 − Ω GT transducer gain = S212 − 28 − dB ∆GT flatness of frequency response − 1 − dB Vo(rms) output voltage (RMS value) VHF − 113 − dBµV UHF − 112 − dBµV − dB dim = −60 dB; 3rd order intermodulation (3-tone) F noise figure − 4.8 VB DC supply voltage 10.8 12 13.2 V Tamb ambient operating temperature −20 − +70 °C 1995 Nov 14 2 Philips Semiconductors Product specification Wideband amplifier module OM2070 CIRCUIT DIAGRAM AND PRINTED-CIRCUIT BOARD C1 C3 C6 R3 R8 R13 handbook, full pagewidth 9 R1 R6 TR1 1 R2 R4 R11 C2 R5 TR2 R7 R9 C4 TR3 R10 R12 R14 2,3,4,5 7,8 C5 6 MGA201 Fig.2 Circuit diagram. handbook, full pagewidth 1 9 1 (9x) TOP VIEW L 75 Ω track 75 Ω track C C MGA202 BOTTOM VIEW L > 5 µH; e.g. catalogue No. 3122 108 20150, or 27 turns enamelled 0.3 mm copper wire wound on a ferrite core (material 4B1; catalogue No. 3122 104 91110) with a diameter of 1.6 mm. C > 220 pF ceramic capacitor. Fig.3 Printed-circuit board holes and tracks. 1995 Nov 14 3 Philips Semiconductors Product specification Wideband amplifier module OM2070 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT Tamb ambient operating temperature −20 +70 °C Tstg storage temperature −40 +125 °C VB DC supply voltage − 15 V PIM peak incident powers on pins 1 and 8 − 100 mW CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Measuring conditions Tamb ambient operating temperature − 25 − °C VB DC supply voltage − 12 − V ZS source impedance − 75 − Ω ZL load impedance − 75 − Ω Z0 characteristic impedance of HF connections − 75 − Ω f frequency range 40 − 860 MHz − 100 − mA 26 28 31 dB − 1 − dB Performance IB supply current S212 GT transducer gain = ∆GT flatness of frequency response VSWRin individual maximum VSWR input; note 1 − 2.3 − VSWRout individual maximum VSWR output; note 1 − 1.9 − S122 back attenuation f = 100 MHz − 45 − dB f = 860 MHz − 35 − dB Vo(rms) output voltage (RMS value) VHF 111 113 − dBµV UHF 110 112 − dBµV − 4.8 − dB F dim = −60 dB; 3rd order intermodulation (3-tone) noise figure Operating conditions Tamb ambient operating temperature −20 − +70 °C VB DC supply voltage 10.8 12 13.2 V f frequency range 40 − 860 MHz ZS source impedance − 75 − Ω ZL load impedance − 75 − Ω Note 1. Highest value (for sample) occurring in the frequency range. 1995 Nov 14 4 Philips Semiconductors Product specification Wideband amplifier module OM2070 MGD070 30 handbook, full pagewidth GT (dB) typ 29 28 27 26 25 0 400 200 800 600 f (MHz) 1000 Gain over entire frequency range. Z0 = 75 Ω. Fig.4 Transducer gain as a function of frequency. MGD071 120 MGD072 300 handbook, halfpage Vo(rms) (dBµV) 2.5 handbook, halfpage ∆GT (dB) IB (mA) Vo(rms) 110 0 −2.5 200 (1) (2) −5.0 IB 100 (3) −7.5 100 −10.0 90 −12.5 20 10 5 VB (V) 15 10 5 VB (V) 15 Reference 0 dB at 12 V. (1) f = 100 MHz. (2) f = 860 MHz. (3) f = 500 MHz. Fig.5 Output voltage and supply current as a function of supply voltage; typical values. 1995 Nov 14 Fig.6 5 Variation of transducer gain as a function of supply voltage; typical values. Philips Semiconductors Product specification Wideband amplifier module OM2070 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 500 0 0.2 –j 0.5 700 100 2 5 ∞ 10 300 10 860 MHz 5 0.2 2 0.5 MGD073 1 Fig.7 Input impedance derived from input reflection coefficient (S11), co-ordinates in ohms × 75; typical values. 1 handbook, full pagewidth 0.5 2 0.2 5 700 10 +j 0 0.2 –j 500 0.5 100 ∞ 860 MHz 2 5 10 300 10 5 0.2 2 0.5 1 MGD074 Fig.8 Output impedance derived from output reflection coefficient (S22), co-ordinates in ohms × 75; typical values. 1995 Nov 14 6 Philips Semiconductors Product specification Wideband amplifier module OM2070 MOUNTING Dip or wave soldering The module should preferably be mounted on a double-sided printed-circuit board, see Fig.3. Input and output should be connected to 75 Ω tracks. The connection to the common pins should be as close to the seating plane as possible. The maximum permissible temperature for the solder is 260 °C. It must not be in contact with the joint for more than 5 s. The total contact time of successive solder waves must not exceed 5 s. The device may be mounted against the printed-circuit board, but the temperature of the device must not exceed 125 °C. SOLDERING Hand soldering If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature below the allowable limit. The maximum contact time for a soldering iron temperature of 260 °C up to the seating plane is 5 s. PACKAGE OUTLINE pin 1 identification 5 max 27 max seating plane handbook, full pagewidth 22 max 1 4.5 3.0 1 2 3 4 5 6 7 8 9 0.56 0.40 0.2 2.54 (9x) Dimensions in mm. Fig.9 Resin coated encapsulation. 1995 Nov 14 7 MGD069 Philips Semiconductors Product specification Wideband amplifier module OM2070 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Nov 14 8