PSMN050-80PS N-channel 80 V 50 mΩ standard level MOSFET Rev. 01 — 10 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources Repetitive avalanche rated 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter ID drain current Conditions Min Typ Max Unit Tmb = 25 °C; VGS = 10 V; see Figure 1 - - 22 A VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 - 2.3 - nC Dynamic characteristics QGD gate-drain charge PSMN050-80PS NXP Semiconductors N-channel 80 V 50 mΩ standard level MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source Simplified outline Graphic symbol D mb G mbb076 S 1 2 3 SOT78 (TO-220AB; SC-46) 3. Ordering information Table 3. Ordering information Type number Package Name Description PSMN050-80PS TO-220AB; SC-46 plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78 TO-220AB Version PSMN050-80PS_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 10 June 2009 2 of 14 PSMN050-80PS NXP Semiconductors N-channel 80 V 50 mΩ standard level MOSFET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 80 V VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ VGS gate-source voltage ID drain current - 80 V -20 20 V VGS = 10 V; Tmb = 100 °C; see Figure 1 - 16 A VGS = 10 V; Tmb = 25 °C; see Figure 1 - 22 A IDM peak drain current tp ≤ 10 µs; pulsed; Tmb = 25 °C - 88 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 56 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Source-drain diode IS source current Tmb = 25 °C - 22 A ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C - 88 A - - J - 18 mJ Avalanche ruggedness EDS(AL)R repetitive drain-source avalanche energy see Figure 3 [1][2] [3] EDS(AL)S non-repetitive VGS = 10 V; Tj(init) = 25 °C; ID = 22 A; Vsup ≤ 80 V; drain-source avalanche RGS = 50 Ω; unclamped energy [1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [2] Repetitive avalanche rating limited by average junction temperature of 170 °C. [3] Refer to application note AN10273 for further information. PSMN050-80PS_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 10 June 2009 3 of 14 PSMN050-80PS NXP Semiconductors N-channel 80 V 50 mΩ standard level MOSFET 003aad056 30 ID (A) Pder (%) 20 80 10 40 0 0 0 Fig 1. 03aa16 120 50 100 150 Tmb (°C) 200 0 50 100 150 200 Tmb (°C) Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aad057 102 IAL (A) (1) 10 (2) 1 (3) 10-1 10-3 Fig 3. 10-2 10-1 1 tAL (ms) 10 Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time PSMN050-80PS_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 10 June 2009 4 of 14 PSMN050-80PS NXP Semiconductors N-channel 80 V 50 mΩ standard level MOSFET 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-mb) thermal resistance from see Figure 4 junction to mounting base Min Typ Max Unit - - 2.7 K/W 003aad055 10 Zth(j-mb) δ = 0.5 (K/W) 1 0.2 0.1 0.05 10-1 0.02 10-2 δ= P single shot 10 tp T -3 t tp T 10-4 10-6 Fig 4. 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN050-80PS_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 10 June 2009 5 of 14 PSMN050-80PS NXP Semiconductors N-channel 80 V 50 mΩ standard level MOSFET 6. Characteristics Table 6. Symbol Characteristics Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 73 - - V ID = 250 µA; VGS = 0 V; Tj = 25 °C 80 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 11; see Figure 12 1 - - V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 11; see Figure 12 - - 4.4 V ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 11; see Figure 12 2 3 4 V VDS = 80 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 80 V; VGS = 0 V; Tj = 100 °C - - 100 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 10 V; ID = 10 A; Tj = 100 °C; see Figure 13 - - 81 mΩ - 37 51 mΩ - 2 - Ω ID = 0 A; VDS = 0 V; VGS = 10 V - 9 - nC ID = 25 A; VDS = 40 V; VGS = 10 V; see Figure 14; see Figure 15 - 11 - nC ID = 25 A; VDS = 40 V; VGS = 10 V; see Figure 14; see Figure 15 - 3.8 - nC - 1.9 - nC Static characteristics V(BR)DSS VGS(th) IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VGS = 10 V; ID = 10 A; Tj = 25 °C RG internal gate resistance f = 1 MHz (AC) [2] Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGS(th) pre-threshold gate-source charge QGS(th-pl) post-threshold gate-source charge - 1.9 - nC QGD gate-drain charge - 2.3 - nC VGS(pl) gate-source plateau voltage VDS = 40 V - 5.2 - V Ciss input capacitance - 633 - pF Coss output capacitance VDS = 12 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; see Figure 16 - 100 - pF Crss reverse transfer capacitance - 50 - pF td(on) turn-on delay time - 9.2 - ns tr rise time - 1 - ns td(off) turn-off delay time - 16 - ns tf fall time - 2.4 - ns VDS = 12 V; RL = 0.5 Ω; VGS = 10 V; RG(ext) = 4.7 Ω PSMN050-80PS_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 10 June 2009 6 of 14 PSMN050-80PS NXP Semiconductors N-channel 80 V 50 mΩ standard level MOSFET Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Source-drain diode VSD source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C; see Figure 17 - 0.86 1.2 V trr reverse recovery time - 32 - ns Qr recovered charge IS = 50 A; dIS/dt = 100 A/µs; VGS = 0 V; VDS = 40 V - 28 - nC [1] Tested to JEDEC standards where applicable. [2] Measured 3 mm from package. 003aad046 40 20 10 ID (A) 003aad047 100 VGS (V) = 5 8 5.5 RDSon (mΩ) 5.5 6 30 6 80 8 5 10 60 20 VGS (V) = 10 4.5 40 20 0 0 Fig 5. 20 2 4 6 8 VDS (V) 0 10 Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. 20 30 ID (A) 40 Drain-source on-state resistance as a function of drain current; typical values PSMN050-80PS_1 Product data sheet 10 © NXP B.V. 2009. All rights reserved. Rev. 01 — 10 June 2009 7 of 14 PSMN050-80PS NXP Semiconductors N-channel 80 V 50 mΩ standard level MOSFET 003aad048 40 003aad052 1000 C (pF) ID (A) Ciss 800 30 600 Crss 20 400 Tj = 175 °C 10 25 °C 200 0 0 0 Fig 7. 2 4 6 V (V) GS Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values 003aad053 35 gfs (S) 30 2 8 Fig 8. 4 6 8 VGS (V) 10 Input and reverse transfer capacitances as a function of gate-source voltage; typical values 003aad054 100 RDSon (mΩ) 80 25 20 60 15 10 40 5 0 20 0 Fig 9. 10 20 30 40 I (A) 50 D Forward transconductance as a function of drain current; typical values 0 10 15 VGS (V) 20 Fig 10. Drain-source on-state resistance as a function of gate-source voltage; typical values PSMN050-80PS_1 Product data sheet 5 © NXP B.V. 2009. All rights reserved. Rev. 01 — 10 June 2009 8 of 14 PSMN050-80PS NXP Semiconductors N-channel 80 V 50 mΩ standard level MOSFET 03aa32 5 03aa35 10−1 ID (A) VGS(th) (V) 4 3 typ max 10−3 typ 2 min 10−2 max 10−4 min 10−5 1 10−6 0 −60 0 60 120 180 0 2 4 Tj (°C) 6 VGS (V) Fig 11. Gate-source threshold voltage as a function of junction temperature Fig 12. Sub-threshold drain current as a function of gate-source voltage 003aad045 3.0 VDS a 2.5 ID 2.0 VGS(pl) VGS(th) 1.5 VGS 1.0 QGS1 QGS2 QGS 0.5 QGD QG(tot) 003aaa508 0.0 -60 -30 0 30 60 90 120 150 180 Tj (°C) Fig 14. Gate charge waveform definitions Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature PSMN050-80PS_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 10 June 2009 9 of 14 PSMN050-80PS NXP Semiconductors N-channel 80 V 50 mΩ standard level MOSFET 003aad050 10 VGS (V) 8 003aad051 103 Ciss C (pF) VDS = 40 V 6 102 Coss 4 Crss 2 0 0 5 QG (nC) 10 10 10-1 15 1 10 2 VDS (V) 10 Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Fig 15. Gate-source voltage as a function of gate charge; typical values 003aad049 100 IS (A) 80 60 40 175 °C Tj = 25 °C 20 0 0 0.5 1 VSD (V) 1.5 Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN050-80PS_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 10 June 2009 10 of 14 PSMN050-80PS NXP Semiconductors N-channel 80 V 50 mΩ standard level MOSFET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig 18. Package outline SOT78 (TO-220AB) PSMN050-80PS_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 10 June 2009 11 of 14 PSMN050-80PS NXP Semiconductors N-channel 80 V 50 mΩ standard level MOSFET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes PSMN050-80PS_1 20090610 Product data sheet - - PSMN050-80PS_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 10 June 2009 12 of 14 PSMN050-80PS NXP Semiconductors N-channel 80 V 50 mΩ standard level MOSFET 9. Legal information 9.1 Data sheet status Document status [1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PSMN050-80PS_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 10 June 2009 13 of 14 PSMN050-80PS NXP Semiconductors N-channel 80 V 50 mΩ standard level MOSFET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 10 June 2009 Document identifier: PSMN050-80PS_1