BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Typical performance RF performance at Th = 25 C in a common source test circuit. f VDS PL Gp D IMD (MHz) (V) (W) (dB) (%) (dBc) CW, class-AB 1300 32 35 19 63 - 2-tone, class-AB 1300 32 17.5 19 48 28 Mode of operation 1.2 Features and benefits CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.2 A : Average output power = 35 W Power gain = 19 dB Drain efficiency = 63 % 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.2 A : Average output power = 17.5 W Power gain = 19 dB Drain efficiency = 48 % Intermodulation distortion = 28 dBc Integrated ESD protection Excellent ruggedness High power gain High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLF642 NXP Semiconductors Broadband power LDMOS transistor 1.3 Applications Communication transmitter applications in the HF to 1400 MHz frequency range Industrial applications in the HF to 1400 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Graphic symbol 1 1 [1] 3 2 3 2 [1] sym112 Connected to flange 3. Ordering information Table 3. Ordering information Type number Package Name Description BLF642 - Version flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage 0.5 +11 V Tstg storage temperature 65 +150 C Tj junction temperature - 200 C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-c) [1] BLF642 Product data sheet Conditions thermal resistance from junction to case Tcase = 80 C; PL = 35 W [1] Typ Unit 1.6 K/W Rth(j-c) is measured under RF conditions. All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 July 2011 © NXP B.V. 2011. All rights reserved. 2 of 12 BLF642 NXP Semiconductors Broadband power LDMOS transistor 6. Characteristics Table 6. Characteristics per section Tj = 25 C; unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.5 mA Min Typ Max Unit 65 - - V VGS(th) gate-source threshold voltage VDS = 32 V; ID = 50 mA 1.4 1.9 2.4 V VGSq gate-source quiescent voltage VDS = 32 V; IDq = 250 mA 1.5 2.0 2.5 V IDSS drain leakage current VGS = 0 V; VDS = 32 V - - 1.4 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 8.0 9.0 - A IGSS gate leakage current VGS = 10 V; VDS = 0 V - - 50 nA gfs forward transconductance VDS = 10 V; ID = 2.5 A - 3.3 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 1.75 A - 300 - m Ciss input capacitance VGS = 0 V; VDS = 32 V; f = 1 MHz - 39 - pF Coss output capacitance VGS = 0 V; VDS = 32 V; f = 1 MHz - 15 - pF Crs feedback capacitance VGS = 0 V; VDS = 32 V; f = 1 MHz - 0.84 - pF 7. Application information Table 7. RF performance in a common-source class-AB circuit Th = 25 C; IDq = 0.2 A. Mode of operation CW, class-AB f VDS PL Gp D (MHz) (V) (W) (dB) (%) 1300 32 35 > 18 > 59 7.1 Ruggedness in class-AB operation The BLF642 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; f = 1300 MHz at rated load power. BLF642 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 July 2011 © NXP B.V. 2011. All rights reserved. 3 of 12 BLF642 NXP Semiconductors Broadband power LDMOS transistor 8. Test information 8.1 RF performance The following figures are measured in a class-AB production test circuit. 8.1.1 1-Tone CW 001aan775 ηD (%) GP (dB) 001aan776 80 22 GP 22 GP (dB) 60 20 20 (7) (6) ηD 18 40 (5) 18 (4) (3) (2) 16 14 0 10 20 30 40 PL (W) 50 20 16 0 14 VDS = 32 V; IDq = 200 mA; f = 1300 MHz. (1) 0 10 20 30 40 PL (W) 50 VDS = 32 V; f = 1300 MHz. (1) IDq = 50 mA (2) IDq = 100 mA (3) IDq = 150 mA (4) IDq = 200 mA (5) IDq = 250 mA (6) IDq = 300 mA (7) IDq = 350 mA Fig 1. Power gain and drain efficiency as function of load power; typical values BLF642 Product data sheet Fig 2. Power gain as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 July 2011 © NXP B.V. 2011. All rights reserved. 4 of 12 BLF642 NXP Semiconductors Broadband power LDMOS transistor 8.1.2 2-Tone CW 001aan777 21 GP (dB) 80 ηD (%) GP 001aan778 0 IMD3 (dBc) 60 20 -20 40 19 ηD (1) (2) -40 (3) 20 18 (4) (5) (6) (7) 17 0 10 20 PL(AV) (W) 0 30 -60 VDS = 32 V; IDq = 200 mA; f = 1300 MHz; carrier spacing = 100 kHz. 0 10 20 PL(AV) (W) 30 VDS = 32 V; f = 1300 MHz; carrier spacing = 100 kHz. (1) IDq = 50 mA (2) IDq = 100 mA (3) IDq = 150 mA (4) IDq = 200 mA (5) IDq = 250 mA (6) IDq = 300 mA (7) IDq = 350 mA Fig 3. Power gain and drain efficiency as function of average load power; typical values Fig 4. Third order intermodulation distortion as a function of average load power; typical values 8.1.3 Pulsed CW 001aao319 22 80 Gp (dB) ηD (%) Gp 20 60 ηD 18 40 20 16 14 0 10 20 30 40 PL (W) 50 0 VDS = 32 V; IDq = 200 mA; f = 1300 MHz Fig 5. BLF642 Product data sheet Power gain and drain efficiency as a function of average power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 July 2011 © NXP B.V. 2011. All rights reserved. 5 of 12 BLF642 NXP Semiconductors Broadband power LDMOS transistor 8.1.4 DVB-T 001aao321 20 Gp Gp (dB) IMDshldr (dBc) ηD (%) 19 001aao320 0 60 40 -20 20 -40 0 -60 12 PAR (dB) PAR 8 ηD 18 17 0 5 10 15 20 25 PL(AV) (W) VDS = 32 V; IDq = 200 mA; f = 1300 MHz. Fig 6. 4 IMDshldr 0 5 10 15 20 25 PL(AV) (W) 0 VDS = 32 V; IDq = 200 mA; f = 1300 MHz. Power gain and drain efficiency as function of average load power; typical values Fig 7. PAR and IMDshldr as function of average load power; typical values 8.2 Test circuit C11 C6 C5 R1 + C18 5.9 mm + - - C13 BLF642 C1 C20 C2 C15 C4 40 mm 28.4 mm C3 C17 24.4 mm C16 C14 10.3 mm 37.7 mm 6 mm C19 C12 001aao322 See Table 8 for a list of components. Fig 8. BLF642 Product data sheet Component layout for class-AB amplifier All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 July 2011 © NXP B.V. 2011. All rights reserved. 6 of 12 BLF642 NXP Semiconductors Broadband power LDMOS transistor Table 8. List of components For production test circuit, see Figure 8 . Printed-Circuit Board (PCB): Rogers 5880; r = 2.2; height = 0.762 mm; Copper (top/bottom metallization); thickness copper plating = 35 m. Component BLF642 Product data sheet Description Value Remarks C1 multilayer ceramic chip capacitor 22 pF [1] C2 multilayer ceramic chip capacitor 5.1 pF [2] C3 multilayer ceramic chip capacitor 4.3 pF [2] C4 multilayer ceramic chip capacitor 10 pF [2] C5 electrolytic chip capacitor 10 F; 50 V C6 multilayer ceramic chip capacitor 22 nF C11, C12 multilayer ceramic chip capacitor 22 pF [1] C13, C14 multilayer ceramic chip capacitor 6.2 pF [1] C15 multilayer ceramic chip capacitor 4.3 pF [1] C16 multilayer ceramic chip capacitor 1.2 pF [1] C17 multilayer ceramic chip capacitor 22 pF [1] C18, C19 multilayer ceramic chip capacitor 10 F [3] C20 electrolytic capacitor 470 F; 63 V R1 wire resistor 100 [1] American Technical Ceramics type 100B or capacitor of same quality. [2] American Technical Ceramics type 100A or capacitor of same quality. [3] TDK C570X7R1H106KT000N or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 July 2011 © NXP B.V. 2011. All rights reserved. 7 of 12 BLF642 NXP Semiconductors Broadband power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C D A F 3 D1 U1 B q c C 1 E1 H U2 E A w1 M A M B M p 2 Q w2 M C M b 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H p Q q U1 U2 w1 w2 mm 4.67 3.94 5.59 5.33 0.15 0.10 9.25 9.04 9.27 9.02 5.92 5.77 5.97 5.72 1.65 1.40 18.54 17.02 3.43 3.18 2.21 1.96 14.27 20.45 20.19 5.97 5.72 0.25 0.51 inch 0.184 0.220 0.006 0.155 0.210 0.004 0.364 0.365 0.356 0.355 0.233 0.227 0.235 0.065 0.225 0.055 0.73 0.67 0.135 0.087 0.805 0.235 0.562 0.010 0.020 0.125 0.077 0.795 0.225 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 99-12-06 99-12-28 SOT467C Fig 9. EUROPEAN PROJECTION Package outline SOT467C BLF642 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 July 2011 © NXP B.V. 2011. All rights reserved. 8 of 12 BLF642 NXP Semiconductors Broadband power LDMOS transistor 10. Abbreviations Table 9. Abbreviations Acronym Description CW Continuous Waveform DVB-T Digital Video Broadcast - Terrestrial ESD ElectroStatic Discharge HF High Frequency LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio RF Radio Frequency VSWR Voltage Standing-Wave Ratio 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF642 v.2 20110722 Product data sheet - BLF642 v.1 Modifications: BLF642 v.1 BLF642 Product data sheet • • • • • • The status of this data sheet has been changed to Product data sheet Table 5 on page 2: The value for Rth(j-c) has been changed. Table 6 on page 3: Some values have been changed. Section 8.1.3 on page 5: Section has been added. Section 8.1.4 on page 6: Section has been added. Section 8.2 on page 6: Section has been added. 20110308 Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 July 2011 - © NXP B.V. 2011. All rights reserved. 9 of 12 BLF642 NXP Semiconductors Broadband power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. 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However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 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Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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All rights reserved. 10 of 12 BLF642 NXP Semiconductors Broadband power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 12.4 Licenses ICs with DVB-T or DVB-T2 functionality Use of this product in any manner that complies with the DVB-T or the DVB-T2 standard may require licenses under applicable patents of the DVB-T respectively the DVB-T2 patent portfolio, which license is available from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under applicable patents of other parties. 12.5 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF642 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 July 2011 © NXP B.V. 2011. All rights reserved. 11 of 12 BLF642 NXP Semiconductors Broadband power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 8.1 8.1.1 8.1.2 8.1.3 8.1.4 8.2 9 10 11 12 12.1 12.2 12.3 12.4 12.5 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 4 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 22 July 2011 Document identifier: BLF642