PHILIPS BLS3135-20

DISCRETE SEMICONDUCTORS
DATA SHEET
halfpage
M3D259
BLS3135-20
Microwave power transistor
Product specification
2000 Feb 01
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-20
FEATURES
PINNING - SOT422A
• Suitable for short and medium pulse applications
PIN
• Internal input and output matching networks for an easy
circuit design
• Emitter ballasting resistors improve ruggedness
• Gold metallization ensures excellent reliability
DESCRIPTION
1
collector
2
emitter
3
base; connected to flange
• Interdigitated emitter-base structure provides high
emitter efficiency
• Multicell geometry improves power sharing and reduces
thermal resistance.
1
handbook, halfpage
APPLICATIONS
• Common base class-C pulsed power amplifiers for radar
applications in the 3.1 to 3.5 GHz range.
3
3
2
MBK051
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT422A) with the common base connected to the
flange.
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common base class-C test circuit.
MODE OF OPERATION
Pulsed, class-C
f
(GHz)
VCB
(V)
PL
(W)
Gp
(dB)
ηC
(%)
3.1 to 3.5
40
20
typ. 8
typ. 40
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
2000 Feb 01
2
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-20
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
75
V
VCES
collector-emitter voltage
RBE = 0
−
75
V
VEBO
emitter-base voltage
open collector
−
2
V
ICM
peak collector current
tp ≤ 100 µs; δ ≤ 10%
−
2
A
Ptot
total power dissipation
tp = 100 µs; δ = 10%; Tmb = 25 °C
−
80
W
Tstg
storage temperature
−65
+200
°C
Tj
operating junction temperature
−
200
°C
Tsld
soldering temperature
−
235
°C
up to 0.2 mm from ceramic cap;
t ≤ 10 s
THERMAL CHARACTERISTICS
SYMBOL
Zth j-h
PARAMETER
CONDITIONS
thermal impedance from junction to heatsink
VALUE
UNIT
tp = 100 µs; δ = 10%; note 1
2
K/W
tp = 200 µs; δ = 10%; note 1
2.45
K/W
tp = 300 µs; δ = 10%; note 1
2.75
K/W
MAX.
UNIT
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IC = 15 mA; open emitter
MIN.
75
−
V
75
−
V
V(BR)CBO
collector-base breakdown voltage
V(BR)CES
collector-emitter breakdown voltage IC = 15 mA; VBE = 0
ICBO
collector leakage current
VCB = 40 V; IE = 0
−
0.5
mA
ICES
collector leakage current
VCE = 40 V; VBE = 0
−
1
mA
IEBO
emitter leakage current
VEB = 1.5 V; IC = 0
−
0.1
mA
hFE
DC current gain
VCB = 5 V; IC = 1.5 A
40
−
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common-base test circuit.
MODE OF OPERATION
f
(GHz)
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
Class-C; tp = 100 µs; δ = 10%
3.1 to 3.5
40
≥20
typ. 22
≥7
typ. 8
≥35
typ. 40
2000 Feb 01
3
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-20
MCD863
25
PL
handbook, halfpage
(1)
(2)
(3)
(W)
20
MCD864
10
Gp
handbook, halfpage
(1)
(2)
(3)
(dB)
8
15
6
10
4
5
2
0
0
0
1
2
3
PD (W)
4
10
15
20
25
PL (W)
VCB = 40 V; class-C; tp = 100 µs; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
Fig.2
5
0
VCB = 40 V; class-C; tp = 100 µs; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
Load power as a function of drive power;
typical values.
Fig.3
MCD865
50
ηC
Power gain as a function of load power;
typical values.
MCD866
10
Gp
handbook, halfpage
handbook, halfpage
(dB)
40
(dB)
8
(1)
(2)
50
ηC
Gp
(%)
ηC
40
(3)
30
6
30
20
4
20
10
2
10
0
0
5
0
10
15
20
3
25
PL (W)
VCB = 40 V; class-C; tp = 100 µs; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
Fig.4
3.4
f (GHz)
0
3.6
VCB = 40 V; class-C; PL = 20 W; tp = 100 µs; δ = 10%.
Collector efficiency as a function of load
power; typical values.
2000 Feb 01
3.2
Fig.5
4
Power gain and efficiency as functions of
frequency; typical values.
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-20
MCD867
15
zi
(Ω)
MCD868
15
ZL
handbook, halfpage
handbook, halfpage
(Ω)
10
10
RL
ri
5
5
0
0
−5
−5
xi
−10
3
3.2
3.4
f (GHz)
XL
−10
3.6
3
3.2
VCB = 40 V; class-C; PL = 20 W.
VCB = 40 V; class-C; PL = 20 W.
Fig.6
Fig.7
Input impedance as a function of frequency
(series components); typical values.
2000 Feb 01
5
3.4
f (GHz)
3.6
Load impedance as a function of frequency
(series components); typical values.
Philips Semiconductors
Product specification
Microwave power transistor
handbook, full pagewidth
BLS3135-20
30
30
40
C2
C1
MCD869
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (εr = 2.2), thickness 0.38 mm.
The other side is unetched and serves as a ground plane.
C1 = C2 = 4.7 pF (ATC 100A).
Fig.8 Component layout for 3.1 to 3.5 GHz class-C test circuit.
2000 Feb 01
6
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-20
PACKAGE OUTLINE
Flanged hermetic ceramic package; 2 mounting holes; 2 leads
SOT422A
D
A
F
3
D1
U1
B
q
C
c
1
L
H
p
U2
E1
E
w1 M A M B M
A
L
2
Q
w2 M C M
b
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
E
E1
F
H
L
p
Q
q
U1
U2
w1
w2
mm
5.72
4.83
5.21
4.95
0.13
0.08
9.93
9.68
10.29
10.03
8.76
8.51
10.29
10.03
1.58
1.47
19.18
17.65
4.52
3.74
3.43
3.18
3.35
2.92
16.51
22.99
22.73
9.91
9.65
0.25
0.76
inches
0.225
0.190
0.205
0.195
0.005
0.003
0.391
0.381
0.405
0.395
0.345
0.335
0.405
0.395
0.062
0.058
0.755
0.695
0.178
0.147
0.135
0.125
0.132
0.115
0.65
0.905
0.895
0.390
0.380
0.01
0.03
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
SOT422A
2000 Feb 01
EUROPEAN
PROJECTION
ISSUE DATE
99-03-29
7
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-20
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
2000 Feb 01
8
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-20
NOTES
2000 Feb 01
9
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-20
NOTES
2000 Feb 01
10
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-20
NOTES
2000 Feb 01
11
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
SCA 69
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
603516/01/pp12
Date of release: 2000
Feb 01
Document order number:
9397 750 06722