74AUP2G04 Low-power dual inverter Rev. 01. — 16 January 2006 Preliminary data sheet 1. General description The 74AUP2G04 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial Power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. The 74AUP2G04 provides two inverting buffers. 2. Features ■ Wide supply voltage range from 0.8 V to 3.6 V ■ High noise immunity ■ Complies with JEDEC standards: ◆ JESD8-12 (0.8 V to 1.3 V) ◆ JESD8-11 (0.9 V to 1.65 V) ◆ JESD8-7 (1.2 V to 1.95 V) ◆ JESD8-5 (1.8 V to 2.7 V) ◆ JESD8-B (2.7 V to 3.6 V) ■ ESD protection: ◆ HBM JESD22-A114-C Class 3A. Exceeds 5000 V ◆ MM JESD22-A115-A exceeds 200 V ◆ CDM JESD22-C101-C exceeds 1000 V ■ Low static power consumption; ICC = 0.9 µA (maximum) ■ Latch-up performance exceeds 100 mA per JESD 78 Class II ■ Inputs accept voltages up to 3.6 V ■ Low noise overshoot and undershoot < 10 % of VCC ■ IOFF circuitry provides partial Power-down mode operation ■ Multiple package options ■ Specified from −40 °C to +85 °C and −40 °C to +125 °C 74AUP2G04 Philips Semiconductors Low-power dual inverter 3. Quick reference data Table 1: Quick reference data GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3 ns. Symbol Parameter tPHL, tPLH HIGH-to-LOW and LOW-to-HIGH propagation delay nA to nY Conditions Min Typ Max Unit CL = 5 pF; RL = 1 MΩ; VCC = 0.8 V - 16.0 - ns CL = 5 pF; RL = 1 MΩ; VCC = 1.1 V to 1.3 V 2.4 5.0 10.3 ns CL = 5 pF; RL = 1 MΩ; VCC = 1.4 V to 1.6 V 1.8 3.6 6.4 ns CL = 5 pF; RL = 1 MΩ; VCC = 1.65 V to 1.95 V 1.5 2.9 5.0 ns CL = 5 pF; RL = 1 MΩ; VCC = 2.3 V to 2.7 V 1.2 2.4 3.9 ns CL = 5 pF; RL = 1 MΩ; VCC = 3.0 V to 3.6 V 1.1 2.1 3.2 ns input capacitance CI power dissipation capacitance CPD - 1.0 - pF VCC = 1.8 V; fi = 1 MHz [1] [2] - 3.2 - pF VCC = 3.3 V; fi = 1 MHz [1] [2] - 4.3 - pF [1] CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(CL × VCC2 × fo) = sum of the outputs. [2] The condition is VI = GND to VCC. 4. Ordering information Table 2: Ordering information Type number Package Temperature range Name Description Version 74AUP2G04GW −40 °C to +125 °C SC-88 plastic surface mounted package; 6 leads SOT363 74AUP2G04GM −40 °C to +125 °C XSON6 plastic extremely thin small outline package; no leads; SOT886 6 terminals; body 1 × 1.45 × 0.5 mm 74AUP2G04GF −40 °C to +125 °C XSON6 plastic extremely thin small outline package; no leads; SOT891 6 terminals; body 1 × 1 × 0.5 mm 74AUP2G04_1 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 16 January 2006 2 of 18 74AUP2G04 Philips Semiconductors Low-power dual inverter 5. Marking Table 3: Marking Type number Marking code 74AUP2G04GW p4 74AUP2G04GM p4 74AUP2G04GF p4 6. Functional diagram 1 1A 1Y 6 3 2A 2Y 4 1 1 6 1 3 4 mnb080 mnb079 Fig 1. Logic symbol Fig 2. IEC logic symbol Y A mna110 Fig 3. Logic diagram (one gate) 7. Pinning information 7.1 Pinning 74AUP2G04 74AUP2G04 1A 1 6 1 6 1Y GND 2 5 VCC 2A 3 4 2Y 1Y GND 2 5 VCC 2A 3 4 2Y 001aad695 Transparent top view 001aad694 Fig 4. Pin configuration SOT363 (SC-88) Fig 5. Pin configuration SOT886 (XSON6) 74AUP2G04_1 Preliminary data sheet 1A © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 16 January 2006 3 of 18 74AUP2G04 Philips Semiconductors Low-power dual inverter 74AUP2G04 1A 1 6 1Y GND 2 5 VCC 2A 3 4 2Y 001aad666 Transparent top view Fig 6. Pin configuration SOT891 (XSON6) 7.2 Pin description Table 4: Pin description Symbol Pin Description 1A 1 data input 1A GND 2 ground (0 V) 2A 3 data input 2A 2Y 4 data output 2Y VCC 5 supply voltage 1Y 6 data output 1Y 8. Functional description 8.1 Function table Table 5: Function table [1] Input Output nA nY L H H L [1] H = HIGH voltage level; L = LOW voltage level. 74AUP2G04_1 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 16 January 2006 4 of 18 74AUP2G04 Philips Semiconductors Low-power dual inverter 9. Limiting values Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions VCC supply voltage IIK input clamping current VI input voltage IOK output clamping current VO < 0 V VO output voltage active mode and Power-down mode VO = 0 V to VCC VI < 0 V [1] [1] Min Max Unit −0.5 +4.6 V - −50 mA −0.5 +4.6 V - −50 mA −0.5 +4.6 V IO output current - ±20 mA ICC quiescent supply current - +50 mA IGND ground current - −50 mA Tstg storage temperature −65 +150 °C Ptot total power dissipation - 250 mW Tamb = −40 °C to +125 °C [2] [1] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] For SC-88 packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K. For XSON6 packages: above 45 °C the value of Ptot derates linearly with 2.4 mW/K. 10. Recommended operating conditions Table 7: Recommended operating conditions Symbol Parameter Min Max Unit VCC supply voltage Conditions 0.8 3.6 V VI input voltage 0 3.6 V VO output voltage active mode 0 VCC V Power-down mode; VCC = 0 V 0 3.6 V Tamb ambient temperature −40 +125 °C ∆t/∆V input transition rise and fall rate 0 200 ns/V VCC = 0.8 V to 3.6 V 74AUP2G04_1 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 16 January 2006 5 of 18 74AUP2G04 Philips Semiconductors Low-power dual inverter 11. Static characteristics Table 8: Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit Tamb = 25 °C VIH VIL VOH VOL HIGH-state input voltage LOW-state input voltage HIGH-state output voltage LOW-state output voltage VCC = 0.8 V 0.70 × VCC - - V VCC = 0.9 V to 1.95 V 0.65 × VCC - - V VCC = 2.3 V to 2.7 V 1.6 - - V VCC = 3.0 V to 3.6 V 2.0 - - V VCC = 0.8 V - - 0.30 × VCC V VCC = 0.9 V to 1.95 V - - 0.35 × VCC V VCC = 2.3 V to 2.7 V - - 0.7 V VCC = 3.0 V to 3.6 V - - 0.9 V IO = −20 µA; VCC = 0.8 V to 3.6 V VCC − 0.1 - - V IO = −1.1 mA; VCC = 1.1 V 0.75 × VCC - - V IO = −1.7 mA; VCC = 1.4 V 1.11 - V VI = VIH or VIL - IO = −1.9 mA; VCC = 1.65 V 1.32 - - V IO = −2.3 mA; VCC = 2.3 V 2.05 - - V IO = −3.1 mA; VCC = 2.3 V 1.9 - - V IO = −2.7 mA; VCC = 3.0 V 2.72 - - V IO = −4.0 mA; VCC = 3.0 V 2.6 - - V IO = 20 µA; VCC = 0.8 V to 3.6 V - - 0.1 V IO = 1.1 mA; VCC = 1.1 V - - 0.3 × VCC V VI = VIH or VIL IO = 1.7 mA; VCC = 1.4 V - - 0.31 V IO = 1.9 mA; VCC = 1.65 V - - 0.31 V IO = 2.3 mA; VCC = 2.3 V - - 0.31 V IO = 3.1 mA; VCC = 2.3 V - - 0.44 V IO = 2.7 mA; VCC = 3.0 V - - 0.31 V IO = 4.0 mA; VCC = 3.0 V - - 0.44 V II input leakage current VI = GND to 3.6 V; VCC = 0 V to 3.6 V - - ±0.1 µA IOFF power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V - - ±0.2 µA ∆IOFF additional power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V - - ±0.2 µA ICC quiescent supply current VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V - - 0.5 µA ∆ICC additional quiescent supply VI = VCC − 0.6 V; IO = 0 A; current VCC = 3.3 V - - 40 µA CI input capacitance VCC = 0 V to 3.6 V; VI = GND or VCC - 1.0 - pF CO output capacitance VO = GND; VCC = 0 V - 1.8 - pF 74AUP2G04_1 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 16 January 2006 6 of 18 74AUP2G04 Philips Semiconductors Low-power dual inverter Table 8: Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min VCC = 0.8 V Typ Max Unit 0.70 × VCC - - V VCC = 0.9 V to 1.95 V 0.65 × VCC - - V VCC = 2.3 V to 2.7 V 1.6 - - V VCC = 3.0 V to 3.6 V 2.0 - - V VCC = 0.8 V - - 0.30 × VCC V VCC = 0.9 V to 1.95 V - - 0.35 × VCC V VCC = 2.3 V to 2.7 V - - 0.7 V VCC = 3.0 V to 3.6 V - - 0.9 V Tamb = −40 °C to +85 °C VIH VIL VOH VOL HIGH-state input voltage LOW-state input voltage HIGH-state output voltage LOW-state output voltage VI = VIH or VIL IO = −20 µA; VCC = 0.8 V to 3.6 V VCC − 0.1 - - V IO = −1.1 mA; VCC = 1.1 V 0.7 × VCC - - V IO = −1.7 mA; VCC = 1.4 V 1.03 - - V IO = −1.9 mA; VCC = 1.65 V 1.30 - - V IO = −2.3 mA; VCC = 2.3 V 1.97 - - V IO = −3.1 mA; VCC = 2.3 V 1.85 - - V IO = −2.7 mA; VCC = 3.0 V 2.67 - - V IO = −4.0 mA; VCC = 3.0 V 2.55 - - V IO = 20 µA; VCC = 0.8 V to 3.6 V - - 0.1 V IO = 1.1 mA; VCC = 1.1 V - - 0.3 × VCC V IO = 1.7 mA; VCC = 1.4 V - - 0.37 V VI = VIH or VIL IO = 1.9 mA; VCC = 1.65 V - - 0.35 V IO = 2.3 mA; VCC = 2.3 V - - 0.33 V IO = 3.1 mA; VCC = 2.3 V - - 0.45 V IO = 2.7 mA; VCC = 3.0 V - - 0.33 V - - 0.45 V II input leakage current VI = GND to 3.6 V; VCC = 0 V to 3.6 V IO = 4.0 mA; VCC = 3.0 V - - ±0.5 µA IOFF power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V - - ±0.5 µA ∆IOFF additional power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V - - ±0.6 µA ICC quiescent supply current VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V - - 0.9 µA ∆ICC additional quiescent supply VI = VCC − 0.6 V; IO = 0 A; current VCC = 3.3 V - - 50 µA 74AUP2G04_1 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 16 January 2006 7 of 18 74AUP2G04 Philips Semiconductors Low-power dual inverter Table 8: Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min VCC = 0.8 V Typ Max Unit 0.75 × VCC - - V VCC = 0.9 V to 1.95 V 0.70 × VCC - - V VCC = 2.3 V to 2.7 V 1.6 - - V VCC = 3.0 V to 3.6 V 2.0 - - V VCC = 0.8 V - - 0.25 × VCC V VCC = 0.9 V to 1.95 V - - 0.30 × VCC V VCC = 2.3 V to 2.7 V - - 0.7 V VCC = 3.0 V to 3.6 V - - 0.9 V Tamb = −40 °C to +125 °C VIH VIL VOH VOL HIGH-state input voltage LOW-state input voltage HIGH-state output voltage LOW-state output voltage VI = VIH or VIL IO = −20 µA; VCC = 0.8 V to 3.6 V VCC − 0.11 - - V IO = −1.1 mA; VCC = 1.1 V 0.6 × VCC - - V IO = −1.7 mA; VCC = 1.4 V 0.93 - - V IO = −1.9 mA; VCC = 1.65 V 1.17 - - V IO = −2.3 mA; VCC = 2.3 V 1.77 - - V IO = −3.1 mA; VCC = 2.3 V 1.67 - - V IO = −2.7 mA; VCC = 3.0 V 2.40 - - V IO = −4.0 mA; VCC = 3.0 V 2.30 - - V IO = 20 µA; VCC = 0.8 V to 3.6 V - - 0.11 V IO = 1.1 mA; VCC = 1.1 V - - 0.33 × VCC V IO = 1.7 mA; VCC = 1.4 V - - 0.41 VI = VIH or VIL V IO = 1.9 mA; VCC = 1.65 V - - 0.39 V IO = 2.3 mA; VCC = 2.3 V - - 0.36 V IO = 3.1 mA; VCC = 2.3 V - - 0.50 V IO = 2.7 mA; VCC = 3.0 V - - 0.36 V - - 0.50 V II input leakage current VI = GND to 3.6 V; VCC = 0 V to 3.6 V IO = 4.0 mA; VCC = 3.0 V - - ±0.75 µA IOFF power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V - - ±0.75 µA ∆IOFF additional power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V - - ±0.75 µA ICC quiescent supply current VI = GND or VCC; IO = 0 A; VCC = 0.8 V to 3.6 V - - 1.4 µA ∆ICC additional quiescent supply VI = VCC − 0.6 V; IO = 0 A; current VCC = 3.3 V - - 75 µA 74AUP2G04_1 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 16 January 2006 8 of 18 74AUP2G04 Philips Semiconductors Low-power dual inverter 12. Dynamic characteristics Table 9: Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8 Symbol Parameter Conditions Min Typ VCC = 0.8 V - VCC = 1.1 V to 1.3 V VCC = 1.4 V to 1.6 V [1] Max Unit 16.0 - ns 2.4 5.0 10.3 ns 1.8 3.6 6.4 ns Tamb = 25 °C; CL = 5 pF tPHL, tPLH HIGH-to-LOW and LOW-to-HIGH propagation delay nA to nY see Figure 7 VCC = 1.65 V to 1.95 V 1.5 2.9 5.0 ns VCC = 2.3 V to 2.7 V 1.2 2.4 3.9 ns VCC = 3.0 V to 3.6 V 1.1 2.1 3.2 ns VCC = 0.8 V - 19.8 - ns VCC = 1.1 V to 1.3 V 2.8 5.9 12.2 ns VCC = 1.4 V to 1.6 V 2.3 4.2 7.5 ns Tamb = 25 °C; CL = 10 pF tPHL, tPLH HIGH-to-LOW and LOW-to-HIGH propagation delay nA to nY see Figure 7 VCC = 1.65 V to 1.95 V 2.0 3.5 5.9 ns VCC = 2.3 V to 2.7 V 1.7 2.9 4.6 ns VCC = 3.0 V to 3.6 V 1.6 2.7 3.8 ns VCC = 0.8 V - 23.3 - ns VCC = 1.1 V to 1.3 V 3.2 6.7 13.0 ns VCC = 1.4 V to 1.6 V 2.6 4.7 8.6 ns Tamb = 25 °C; CL = 15 pF tPHL, tPLH HIGH-to-LOW and LOW-to-HIGH propagation delay nA to nY see Figure 7 VCC = 1.65 V to 1.95 V 2.3 4.0 6.7 ns VCC = 2.3 V to 2.7 V 2.1 3.3 5.1 ns VCC = 3.0 V to 3.6 V 2.0 3.1 4.2 ns VCC = 0.8 V - 33.6 - ns VCC = 1.1 V to 1.3 V 4.4 8.9 16.0 ns VCC = 1.4 V to 1.6 V 3.6 6.3 10.8 ns Tamb = 25 °C; CL = 30 pF tPHL, tPLH HIGH-to-LOW and LOW-to-HIGH propagation delay nA to nY see Figure 7 VCC = 1.65 V to 1.95 V 3.2 5.3 9.0 ns VCC = 2.3 V to 2.7 V 2.9 4.5 6.5 ns VCC = 3.0 V to 3.6 V 2.9 4.2 5.4 ns 74AUP2G04_1 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 16 January 2006 9 of 18 74AUP2G04 Philips Semiconductors Low-power dual inverter Table 9: Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8 Symbol Parameter Conditions Min Typ VCC = 0.8 V - VCC = 1.1 V to 1.3 V - VCC = 1.4 V to 1.6 V [1] Max Unit 2.8 - pF 3.0 - pF - 3.1 - pF VCC = 1.65 V to 1.95 V - 3.2 - pF VCC = 2.3 V to 2.7 V - 3.7 - pF VCC = 3.0 V to 3.6 V - 4.3 - pF Tamb = 25 °C [2] [3] power dissipation capacitance fi = 1 MHz CPD [1] All typical values are measured at nominal VCC. [2] CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(CL × VCC2 × fo) = sum of the outputs. [3] The condition is VI = GND to VCC. Table 10: Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8 Symbol Parameter −40 °C to +85 °C Conditions −40 °C to +125 °C Unit Min Max Min Max VCC = 1.1 V to 1.3 V 2.1 11.4 2.1 12.6 ns VCC = 1.4 V to 1.6 V 1.6 7.4 1.6 8.2 ns CL = 5 pF tPHL, tPLH HIGH-to-LOW and LOW-to-HIGH propagation delay nA to nY see Figure 7 VCC = 1.65 V to 1.95 V 1.4 5.9 1.4 6.5 ns VCC = 2.3 V to 2.7 V 1.1 4.5 1.1 5.0 ns VCC = 3.0 V to 3.6 V 1.0 3.9 1.0 4.3 ns VCC = 1.1 V to 1.3 V 2.6 13.7 2.6 15.1 ns VCC = 1.4 V to 1.6 V 2.1 8.7 2.1 9.6 ns VCC = 1.65 V to 1.95 V 1.8 7.0 1.8 7.7 ns VCC = 2.3 V to 2.7 V 1.5 5.4 1.5 6.0 ns VCC = 3.0 V to 3.6 V 1.4 4.5 1.4 5.0 ns CL = 10 pF tPHL, tPLH HIGH-to-LOW and LOW-to-HIGH propagation delay nA to nY see Figure 7 74AUP2G04_1 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 16 January 2006 10 of 18 74AUP2G04 Philips Semiconductors Low-power dual inverter Table 10: Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8 Symbol Parameter −40 °C to +85 °C Conditions −40 °C to +125 °C Unit Min Max Min Max VCC = 1.1 V to 1.3 V 3.0 15.8 3.0 17.4 ns VCC = 1.4 V to 1.6 V 2.4 10.0 2.4 11.0 ns VCC = 1.65 V to 1.95 V 2.1 8.0 2.1 8.8 ns VCC = 2.3 V to 2.7 V 1.8 6.1 1.8 6.8 ns VCC = 3.0 V to 3.6 V 1.8 5.0 1.8 5.5 ns CL = 15 pF tPHL, tPLH HIGH-to-LOW and LOW-to-HIGH propagation delay nA to nY see Figure 7 CL = 30 pF tPHL, tPLH HIGH-to-LOW and LOW-to-HIGH propagation delay nA to nY see Figure 7 VCC = 1.1 V to 1.3 V 4.0 19.0 4.0 20.9 ns VCC = 1.4 V to 1.6 V 3.2 12.9 3.2 14.2 ns VCC = 1.65 V to 1.95 V 2.9 10.5 2.9 11.6 ns VCC = 2.3 V to 2.7 V 2.6 7.6 2.6 8.4 ns VCC = 3.0 V to 3.6 V 2.6 6.2 2.6 6.9 ns 13. Waveforms VI VM nA input VM GND t PHL t PLH VOH VM nY output VM VOL mna344 Measurement points are given in Table 11. Logic levels: VOL and VOH are typical output voltage drop that occur with the output load. Fig 7. The data input (nA) to output (nY) propagation delays Table 11: Measurement points Supply voltage Output Input VCC VM VM VI tr = tf 0.8 V to 3.6 V 0.5 × VCC 0.5 × VCC VCC ≤ 3.0 ns 74AUP2G04_1 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 16 January 2006 11 of 18 74AUP2G04 Philips Semiconductors Low-power dual inverter VCC VEXT 5 kΩ PULSE GENERATOR VI VO DUT RT CL RL 001aac521 Test data is given in Table 12. Definitions for test circuit: RL = Load resistance CL = Load capacitance including jig and probe capacitance RT = Termination resistance should be equal to the output impedance Zo of the pulse generator VEXT = External voltage for measuring switching times. Fig 8. Load circuitry for switching times Table 12: Test data Supply voltage Load VEXT VCC CL 0.8 V to 3.6 V 5 pF, 10 pF, 5 kΩ or 1 MΩ open 15 pF and 30 pF [1] RL [1] tPZH, tPHZ tPZL, tPLZ GND 2 × VCC For measuring enable and disable times RL = 5 kΩ, for measuring propagation delays, setup and hold times and pulse width RL = 1 MΩ 74AUP2G04_1 Preliminary data sheet tPLH, tPHL © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 16 January 2006 12 of 18 74AUP2G04 Philips Semiconductors Low-power dual inverter 14. Package outline Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC SOT363 JEDEC JEITA SC-88 EUROPEAN PROJECTION ISSUE DATE 97-02-28 04-11-08 Fig 9. Package outline SOT363 (SC-88) 74AUP2G04_1 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 16 January 2006 13 of 18 74AUP2G04 Philips Semiconductors Low-power dual inverter XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm SOT886 b 1 2 3 4× (2) L L1 e 6 5 e1 4 e1 6× A (2) A1 D E terminal 1 index area 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) max A1 max b D E e e1 L L1 mm 0.5 0.04 0.25 0.17 1.5 1.4 1.05 0.95 0.6 0.5 0.35 0.27 0.40 0.32 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. OUTLINE VERSION SOT886 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-07-15 04-07-22 MO-252 Fig 10. Package outline SOT886 (XSON6) 74AUP2G04_1 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 16 January 2006 14 of 18 74AUP2G04 Philips Semiconductors Low-power dual inverter XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm 1 SOT891 b 3 2 L L1 e 6 5 e1 4 e1 A A1 D E terminal 1 index area 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max A1 max b D E e e1 L L1 mm 0.5 0.04 0.20 0.12 1.05 0.95 1.05 0.95 0.55 0.35 0.35 0.27 0.40 0.32 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-03-11 05-04-06 SOT891 Fig 11. Package outline SOT891 (XSON6) 74AUP2G04_1 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 16 January 2006 15 of 18 74AUP2G04 Philips Semiconductors Low-power dual inverter 15. Abbreviations Table 13: Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model TTL Transistor Transistor Logic 16. Revision history Table 14: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes 74AUP2G04_1 <tbd> Product data sheet - - - 74AUP2G04_1 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 16 January 2006 16 of 18 74AUP2G04 Philips Semiconductors Low-power dual inverter 17. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 18. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 20. Trademarks 19. Disclaimers Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 21. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 74AUP2G04_1 Preliminary data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 16 January 2006 17 of 18 74AUP2G04 Philips Semiconductors Low-power dual inverter 22. Contents 1 2 3 4 5 6 7 7.1 7.2 8 8.1 9 10 11 12 13 14 15 16 17 18 19 20 21 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 Functional description . . . . . . . . . . . . . . . . . . . 4 Function table . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5 Recommended operating conditions. . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . . 9 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 17 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Contact information . . . . . . . . . . . . . . . . . . . . 17 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 16 January 2006 Document number: 74AUP2G04_1 Published in The Netherlands