INTEGRATED CIRCUITS DATA SHEET TEA6850 IF filter / amplifier / demodulator for FM radio receivers Preliminary specification File under Integrated Circuits, IC01 July 1994 Philips Semiconductors Preliminary specification IF filter / amplifier / demodulator for FM radio receivers TEA6850 FEATURES GENERAL DESCRIPTION • Improved dynamic selectivity and sensitivity because of tunable IF filter The TEA6850 is a monolithic bipolar integrated circuit for IF filtering, FM demodulation and level detection. Using IF filters tuned by the demodulated signal, dynamic selectivity and sensitivity are improved. • Fully integrated, frequency matched FM demodulator • High linearity • Unweighted level detector output • Soft mute • MPX output for RDS and diversity • Internal source selector. QUICK REFERENCE DATA SYMBOL PARAMETER MIN. TYP. MAX. 10 UNIT VP supply voltage (pin 7) 7 8.5 V IP supply current (pin 7) 14 17.5 21 mA DS200 dynamic selectivity for 200 kHz 22 27 − dB 61 67 − dB − 0.3 0.5 % 180 200 220 mV −40 − +85 °C distance (EMF = 700 µV; filter bandwidth = 50 kHz) S/N signal-to-noise ratio (∆f = ±22.5 kHz; fm = 1 kHz) THD total harmonic distortion (∆f = ±75 kHz; fm = 1 kHz) VO AF output signal at pin 4 (RMS value) Tamb operating ambient temperature ORDERING INFORMATION EXTENDED TYPE NUMBER TEA6850H PACKAGE PINS PIN POSITION MATERIAL CODE 44 QFP plastic SOT307(1) Note 1. SOT307-2; 1996 August 26. July 1994 2 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... Philips Semiconductors 3 IF filter / amplifier / demodulator for FM radio receivers July 1994 Preliminary specification TEA6850 Fig.1 Diagram for adaptive application. Philips Semiconductors Preliminary specification IF filter / amplifier / demodulator for FM radio receivers Fig.2 TEA6850H (adaptive version), printed- circuit board. July 1994 4 TEA6850 Philips Semiconductors Preliminary specification IF filter / amplifier / demodulator for FM radio receivers TEA6850 PINNING SYMBOL PIN DESCRIPTION RDSOUT 1 output for RDS CENABLE 2 chip enable MPXIN 3 external audio frequency input (MPX signal) MPX 4 audio frequency output (MPX signal) LVLUNW 5 unweighted level output MPXSEL 6 source selector for MPX signal VP 7 supply voltage (8.5 V) GND 8 ground (0 V) VGAP 9 internal reference voltage VUT2 10 reference voltage output VUT1 11 reference voltage output IFADJ 12 input for IF filter frequency adjustment BWADJ 13 input for IF filter bandwidth adjustment IFIN 14 IF signal input 1 IFINI 15 IF signal input 2 GAINADJ 16 input for mixer gain adjustment n.c. 17 not connected CRYSTAL 18 crystal oscillator input GND 19 oscillator ground n.c. 20 not connected OUT300I 21 IF filter output (0°) OUT300Q 22 IF filter output (90°) CLIM1I 23 IF limiter feedback 1 CLIM2I 24 IF limiter feedback 2 CLIM3I 25 IF limiter feedback 3 CLIM4I 26 IF limiter feedback 4 CLIM1Q 27 IF limiter feedback 5 CLIM2Q 28 IF limiter feedback 6 CLIM3Q 29 IF limiter feedback 7 CLIM4Q 30 IF limiter feedback 8 LVLADJ 31 input for level adjustment LVLWEI 32 weighted level output IHP60 33 input for high-pass −3 dB adjustment CHPMUTE 34 output of rectified high-pass signal CMUTE 35 mute input DEMOLOOP1 36 demodulator output 1 DEMOLOOP2 37 demodulator output 2 COP2 38 MPX correction output 2 CON2 39 MPX correction input 2 COO1 40 MPX correction output 1 July 1994 5 Philips Semiconductors Preliminary specification IF filter / amplifier / demodulator for FM radio receivers SYMBOL PIN TEA6850 DESCRIPTION CON1 41 MPX correction input 1 IFLOOP1 42 IF loop filter output 1 IFLOOP2 43 IF loop filter output 2 IFLOOP3 44 IF loop filter output 3 Fig.3 Pin configuration. July 1994 6 Philips Semiconductors Preliminary specification IF filter / amplifier / demodulator for FM radio receivers TEA6850 FUNCTIONAL DESCRIPTION The first mixer stage at the input of the circuit is for mixing the 10.7 MHz IF signal to 300 kHz. The IF filter has a resonance frequency of 300 kHz (adjustable), tunable from 50 kHz to 500 kHz, and a bandwidth of about 20 kHz to 80 kHz tunable. Static filter response see Fig.5. The limiter has a gain of approximately 90 dB, which is virtually independent from temperature change. The demodulator is frequency matched with the IF filter. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VP supply voltage −0.3 +12 V IP supply current − 21 mA Tstg storage temperature −55 +125 °C Tamb operating ambient temperature −40 +85 °C Ptot total power dissipation − 252 mW VESD electrostatic handling for all pins (note 1) − ±300 V Note to the Limiting Values 1. Charge device model class B: equivalent to discharging a 200 pF capacitor through a 0 Ω series resistor. THERMAL RESISTANCE SYMBOL Rth j-a July 1994 PARAMETER THERMAL RESISTANCE from junction to ambient in free air 65 K/W 7 Philips Semiconductors Preliminary specification IF filter / amplifier / demodulator for FM radio receivers TEA6850 DC CHARACTERISTICS VP = 8.5 V; Tamb = +25 °C; all voltages referenced to ground unless otherwise specified. SYMBOL PARAMETER MIN. TYP. MAX. UNIT VP supply voltage 7 8.5 10 IP supply current (TEA6850 enable) 14 17.5 21 mA IP supply current (TEA6850 disable) 320 400 480 µA V1 voltage at pin 1 2.1 2.4 2.7 V V2 voltage at pin 2 tbn tbn tbn V V3 voltage at pin 3 3.3 3.55 3.8 V V4 voltage at pin 4 3.3 3.55 3.8 V V5 voltage at pin 5 tbn tbn tbn V V6 voltage at pin 6 2.1 2.3 2.5 V V12 voltage at pin 12 0.98 1.08 1.18 V V13 voltage at pin 13 tbn tbn tbn V V14 voltage at pin 14 1.8 2 2.2 V V15 voltage at pin 15 1.8 2 2.2 V V16 voltage at pin 16 tbn tbn tbn V V18 voltage at pin 18 3.0 3.3 3.6 V V21 voltage at pin 21 3.2 3.5 3.8 V V22 voltage at pin 22 3.2 3.5 3.8 V V23 voltage at pin 23 3.9 4.2 4.5 V V24 voltage at pin 24 3.9 4.2 4.5 V V25 voltage at pin 25 3.9 4.2 4.5 V V26 voltage at pin 26 3.9 4.2 4.5 V V27 voltage at pin 27 3.9 4.2 4.5 V V28 voltage at pin 28 3.9 4.2 4.5 V V29 voltage at pin 29 3.9 4.2 4.5 V V30 voltage at pin 30 3.9 4.2 4.5 V V31 voltage at pin 31 tbn tbn tbn V V32 voltage at pin 32 tbn tbn tbn V V33 voltage at pin 33 4.1 4.4 4.7 V V34 voltage at pin 34 2.7 2.9 3.3 V V35 voltage at pin 35 2.1 2.4 2.7 V V36 voltage at pin 36 4.2 4.4 4.6 V V37 voltage at pin 37 4.2 4.4 4.6 V V38 voltage at pin 38 2.1 2.4 2.7 V V39 voltage at pin 39 2.1 2.4 2.7 V V40 voltage at pin 40 2.1 2.4 2.7 V V41 voltage at pin 41 2.1 2.4 2.7 V V42 voltage at pin 42 1.6 1.75 1.9 V V43 voltage at pin 43 1.6 1.75 1.9 V V44 voltage at pin 44 1.6 1.75 1.9 V July 1994 8 V Philips Semiconductors Preliminary specification IF filter / amplifier / demodulator for FM radio receivers SYMBOL TEA6850 PARAMETER MIN. TYP. MAX. UNIT Reference voltage source V9 voltage at pin 9 2.4 2.55 2.7 V V10 voltage at pin 10 2.95 3.25 3.55 V V11 voltage at pin 11 0.98 1.08 1.2 V TK temperature coefficient of V10 and V11 − 3.3 − 10−3/K AC CHARACTERISTICS VP = 8.5 V; Tamb = +25 °C; f = 10.7 MHz with fm = 1 kHz, ±22.5 kHz deviaton (∆f = ±22.5 kHz); EMF = 30 mV RMS; 50 µs de-emphasis; filter bandwidth = 50 kHz overall; −6 dB gain from EMF to IF filter output (pins 21 and 22); in noise frequency band for S/N measurements 300 Hz to 15 kHz; S/N stereo measurement with ideal decoder; measurements taken in Fig.4 unless otherwise specified. SYMBOL DS100 PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dynamic selectivity for 100 kHz EMF = 700 µV 13 16 − dB distance EMF = 14 mV 10 12 − dB dynamic selectivity for 200 kHz EMF = 700 µV 22 27 − dB distance EMF = 14 mV 18 22 − dB S/N signal-to-noise ratio mono 61 67 − dB stereo 54 57 − dB EMF IF signal S/N = 26 dB; V5 = 5 V − 20 45 µV S/N = 46 dB; V5 = 5 V − 130 370 µV input voltage for start of limiting −3 db at MPX output; − 10 20 µV (RMS value) V5 = 5V total harmonic distortion ∆f = 75 kHz − 0.3 0.5 % DS200 EMF THD D57 ∆f = 100 kHz − 0.5 1 % fm = 8 kHz; ∆f = 75 kHz − 3 5 % attenuation of third harmonic fm = 19 kHz; ∆f = 6.75 kHz; 14 20 − dB measured at pin 4 measured at 57 kHz 300 − − mV compared to 57 kHz ∆f = 2 kHz EMF admissible maximum input voltage A14-21,22 gain to IF filter output (adjustable) − −6 − dB ∆ADC downconverter adjustable range −10 − +6 dB VO MPX output voltage (RMS value) ∆VO MPX output voltage ripple (RMS value) July 1994 180 200 220 mV 1 kHz < fmod < 15 kHz − − ±2 dB 23 kHz < fmod < 53 kHz − − ±2 dB 9 Philips Semiconductors Preliminary specification IF filter / amplifier / demodulator for FM radio receivers SYMBOL RR PARAMETER power supply ripple rejection TEA6850 CONDITIONS f = 200 Hz to 20 kHz; MIN. TYP. MAX. UNIT 38 − − dB − 50 − dB 40 44 − dB Vrmax = 100 mV (on VP); ripple at MPX output αAM AM suppression fmod = 400 Hz; modulation = 30% 500 µV < EMF < 100 mV RDS output (pin 1) ZO output impedance − − 1 kΩ RL load resistance 15 − − kΩ CL load capacitance − − 50 pF V1 RDS signal output voltage 4 6 − mV tswitch switch on time − − 500 ms fmod = 57 kHz; ∆f = 2 kHz; RL = ∞; CL = 0 10.7 MHz input (pins 14 and 15) Ri input resistance 3.5 5 6.5 kΩ Ci input capacitance − − 5 pF V14 residual oscillator signal fosc/2 = 11 mHz; RG = 300 Ω − − 30 µV Crystal f0 standard frequency − 22 − MHz ∆f0/f0 frequency tolerance −100 − +100 ppm C0 shunt capacitance − − 7 pF RS equivalent series resistance − − 120 Ω ∆T0/T0 temperature drift −50 − + 50 ppm 13 20 40 mV 7 12 14 mV −40 °C < T < +85 °C Oscillator (measured at pin 18) V18 22 MHz output level OUT300Q, I output (pins 21 and 22; ROUT300 = 33 KΩ; see Fig.4) V21,22 output voltage EMF = 75 mV |V21|−|V22| I, Q output level difference − − 1.5 mV TC temperature coefficient of − 3.3 − 10−3/K − 1.26 − kΩ −10 0 +10 kHz −5 0 +3 kHz 70 80 − kHz − 20 − kHz output voltage ZO output impedance Turnable filter (−40 °C < T < +85 °C; filter response see Fig.5) ∆F0 frequency temperature shift ∆B bandwidth temperature shift Bmax maximum adjustable V13 = 0 V bandwidth Bmin minimum adjustable bandwidth July 1994 10 Philips Semiconductors Preliminary specification IF filter / amplifier / demodulator for FM radio receivers SYMBOL PARAMETER TEA6850 CONDITIONS MIN. TYP. MAX. UNIT Level amplifier (pin 5; typical curve and adjusting range see Fig.7) ZO output impedance 8 10 12 kΩ TC temperature coefficient of − 3.3 − 10−3/K 2.35 2.6 V output voltage V5 output voltage α = −3 dB for EMF = 200µV; 2.1 EMF = 100 µV EMF = 1 mV 2.95 3.3 3.65 V S slope of output voltage 100 µV < EMF < 10 mV − 950 − mV/20 dB V5 level shift adjustment range EMF = 0 ±0.5 ±1.0 ±1.5 V − 200 − µV 100 − 300 µV 29 32 35 dB/Dec −35 −32 −29 dB Soft mute (typical curves see Fig.8) level dependence EMF start of mute (α = −3 dB) for IF input (RMS value) EMF −3 dB adjustment range for IF input SM mute slope at −15 dB VMPX/VMPX0 muting depth EMF < 5 µV; α = −3 dB for EMF = 200 µV I32 τmute charge current V5 = 4.5 V; V32 = 3.9 V 10 13 17 µA discharge current V5 = 4.5 V; V32 = 5.1 V 20 26 34 µA 0.75 1 1.3 ms 1.5 2 2.6 ms −12 −10 −8 dB 165 185 205 mV time constant from unmuted to muted τunmute time constant from muted to unmuted high-pass dependence (see Fig.9) VMPX/VMPX0 muting depth V1 voltage at pin 1 (RMS value) I34 charge current V34 = 0 V 140 200 260 µA discharge current V34 = 5 V 0.7 1 3 µA residual DC offset at MPX output EMF < 80 µV − − 60 mV 80 µV < EMF < 2 mV − − 60 mV − − 100 Ω f = 60 kHz; VMPX/VMPX0 = −3 dB ∆V4 MPX output (pin 4) RO output resistance RL load resistance 3 − − kΩ CL load capacitance − − 50 pF V4 clipping DC voltage 1.5 − 7 V V4 residual signal of 300 kHz and − − 10 mV V4 ≤ 1 V higher harmonics (RMS value) July 1994 11 Philips Semiconductors Preliminary specification IF filter / amplifier / demodulator for FM radio receivers SYMBOL PARAMETER TEA6850 CONDITIONS MIN. TYP. MAX. UNIT CENABLE (pin 2) V2 RI voltage range chip enable −0.3 +0.6 +1.1 V chip disable 1.9 2.4 5.5 V 100 − − kΩ input resistance Source selector isolation (f < 12.5 kHz; mode TEA6850 signal: V6 > 1.9 V or pin not connected; mode external signal: V6 < 1.1 V) VMPX/VMPXIN isolation of external signal mode TEA6850 signal; −70 −80 − dB −70 −80 − dB 1 − − MΩ ∆f = 0; VMPXIN = 200 mV; f = 12.5 kHz VMPX/VMPX0 isolation of TEA6850 signal mode external signal; ∆f = 22.5 kHz; Rg (pin 3) < 10 kΩ; fmod = 12.5 kHz RI input resistance at pin 6 V6 > 1.9 V V6 < 1.1 V input resistance at pin 3 I6 July 1994 input current Vsselect < 1.1 V 12 3 − − kΩ 23 30 37 kΩ − − 20 µA This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... Philips Semiconductors 13 IF filter / amplifier / demodulator for FM radio receivers July 1994 Preliminary specification TEA6850 Fig.4 Test circuit. Philips Semiconductors Preliminary specification IF filter / amplifier / demodulator for FM radio receivers Fig.5 IF filter frequency response. Fig.6 High-pass frequency response (see Fig.1). July 1994 14 TEA6850 Philips Semiconductors Preliminary specification IF filter / amplifier / demodulator for FM radio receivers Fig.7 LEVELAMP output voltage. Fig.8 Soft mute curve. July 1994 15 TEA6850 Philips Semiconductors Preliminary specification IF filter / amplifier / demodulator for FM radio receivers Fig.9 High-pass mute curve. Fig.10 Temperature dependence of α − 3 dB and THD. July 1994 16 TEA6850 Philips Semiconductors Preliminary specification IF filter / amplifier / demodulator for FM radio receivers APPENDIX Alignment procedure for the test circuit (see Fig.4) 1. Connect a spectrum analyser to pin 21 or pin 22. Set centre frequency to 300 kHz and frequency span from 200 kHz to 400 kHz. 2. Set frequency of RF-generator to 10.7 MHz, EMF-level to 4 mV RMS, modulation frequency to 1 kHz and frequency deviation to 75 kHz. 3. Turn poti P7 in the mid position. Align centre frequency of the tunable IF-filter with poti P5. The alignment is correct, if the spectrum measured at pin 21 is symmetric. 4. Set frequency deviation of RF-generator to zero (EMF = 4 mV RMS). Align the downconverter gain with poti P1. The alignment is correct, if the level at pin 21 is 2 mV RMS. 5. Short pin 36 and pin 37. Set frequency of RF-generator to 10.6 MHz respectively 10.8 MHz (EMF = 4 mV RMS, ∆f = 0). Align bandwidth of the tunable IF-filter with poti P7. The alignment is correct, if the level measured at 200 kHz respectively 400 kHz is 21 dB below the maximum. Remove the short. 6. Set frequency of the RF-generator to 10.7 MHz, EMF-level to 20 mV RMS, modulation frequency to 1 kHz and frequency deviation to 22.5 kHz. Measure level of the 1 kHz signal at pin 4. Set the EMF-level to 200 µV. Align start of mute (α − 3 dB) with poti P2. 7. Set EMF-level back to 20 mV RMS and vary the modulation frequency. Align MPX output voltage ripple (see ∆VO in the AC CHARACTERISTICS) with poti P6. July 1994 17 TEA6850 Philips Semiconductors Preliminary specification IF filter / amplifier / demodulator for FM radio receivers TEA6850 PACKAGE OUTLINE QFP44: plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 x 10 x 1.75 mm SOT307-2 c y X A 33 23 34 22 ZE e E HE A A2 wM (A 3) A1 θ bp Lp pin 1 index L 12 44 1 detail X 11 wM bp e ZD v M A D B HD v M B 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HD HE L Lp v w y mm 2.10 0.25 0.05 1.85 1.65 0.25 0.40 0.20 0.25 0.14 10.1 9.9 10.1 9.9 0.8 12.9 12.3 12.9 12.3 1.3 0.95 0.55 0.15 0.15 0.1 Z D (1) Z E (1) 1.2 0.8 1.2 0.8 θ o 10 0o Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 95-02-04 97-08-01 SOT307-2 July 1994 EUROPEAN PROJECTION 18 Philips Semiconductors Preliminary specification IF filter / amplifier / demodulator for FM radio receivers TEA6850 SOLDERING Wave soldering Introduction Wave soldering is not recommended for QFP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. If wave soldering cannot be avoided, the following conditions must be observed: • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). • The footprint must be at an angle of 45° to the board direction and must incorporate solder thieves downstream and at the side corners. Reflow soldering Even with these conditions, do not consider wave soldering the following packages: QFP52 (SOT379-1), QFP100 (SOT317-1), QFP100 (SOT317-2), QFP100 (SOT382-1) or QFP160 (SOT322-1). Reflow soldering techniques are suitable for all QFP packages. The choice of heating method may be influenced by larger plastic QFP packages (44 leads, or more). If infrared or vapour phase heating is used and the large packages are not absolutely dry (less than 0.1% moisture content by weight), vaporization of the small amount of moisture in them can cause cracking of the plastic body. For more information, refer to the Drypack chapter in our “Quality Reference Handbook” (order code 9397 750 00192). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. July 1994 19 Philips Semiconductors Preliminary specification IF filter / amplifier / demodulator for FM radio receivers TEA6850 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1994 20