PHILIPS BAW56

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAW56
High-speed double diode
Product specification
Supersedes data of 1996 Sep 17
1999 May 11
Philips Semiconductors
Product specification
High-speed double diode
BAW56
FEATURES
DESCRIPTION
• Small plastic SMD package
The BAW56 consists of two
high-speed switching diodes with
common anodes, fabricated in planar
technology, and encapsulated in the
small SOT23 plastic SMD package.
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 450 mA.
handbook, 4 columns
PINNING
2
PIN
DESCRIPTION
1
cathode (k1)
2
cathode (k2)
3
common anode
1
APPLICATIONS
2
1
• High-speed switching in thick and
thin-film circuits.
3
3
MAM206
Top view
Marking code: A1p = made in Hong Kong; A1t = made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse voltage
−
85
V
VR
continuous reverse voltage
−
75
V
IF
continuous forward current
single diode loaded; note 1;
see Fig.2
−
215
mA
double diode loaded; note 1;
see Fig.2
−
125
mA
−
450
mA
t = 1 µs
−
4
A
t = 1 ms
−
1
A
t=1s
−
0.5
A
−
250
mW
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward
current
square wave; Tj = 25 °C prior to
surge; see Fig.4
Tamb = 25 °C; note 1
Ptot
total power dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 11
2
Philips Semiconductors
Product specification
High-speed double diode
BAW56
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
IR
forward voltage
see Fig.3
reverse current
IF = 1 mA
715
mV
IF = 10 mA
855
mV
IF = 50 mA
1
V
IF = 150 mA
1.25
V
VR = 25 V
30
nA
VR = 75 V
1
µA
VR = 25 V; Tj = 150 °C
30
µA
see Fig.5
VR = 75 V; Tj = 150 °C
50
µA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
2
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.7
4
ns
Vfr
forward recovery voltage
when switched from IF = 10 mA;
tr = 20 ns; see Fig.8
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 11
3
VALUE
UNIT
360
K/W
500
K/W
Philips Semiconductors
Product specification
High-speed double diode
BAW56
GRAPHICAL DATA
MBD033
300
MBG382
300
handbook, halfpage
IF
(mA)
IF
(mA)
(1)
200
(2)
(3)
200
single diode loaded
double diode loaded
100
100
0
0
0
100
T amb ( oC)
200
1
2
VF (V)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.2
0
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
MBG704
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 11
4
104
Philips Semiconductors
Product specification
High-speed double diode
BAW56
MGA884
105
IR
(nA)
10
MBH191
2.5
Cd
(pF)
handbook, halfpage
2.0
V R = 75 V
4
1.5
10
max
3
75 V
1.0
10
25 V
2
0.5
typ
typ
10
0
100
0
T j ( o C)
0
200
5
10
15
20
VR (V)
25
f = 1 MHz; Tj = 25 °C.
Fig.5
Reverse current as a function of junction
temperature.
1999 May 11
Fig.6
5
Diode capacitance as a function of reverse
voltage; typical values.
Philips Semiconductors
Product specification
High-speed double diode
BAW56
handbook, full pagewidth
tr
tp
t
D.U.T.
10%
IF
RS = 50 Ω
IF
SAMPLING
OSCILLOSCOPE
t rr
t
R i = 50 Ω
V = VR I F x R S
MGA881
(1)
90%
VR
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
V
I
90%
R S = 50 Ω
D.U.T.
OSCILLOSCOPE
V fr
R i = 50 Ω
10%
MGA882
t
tr
input
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
1999 May 11
6
t
tp
output
signal
Philips Semiconductors
Product specification
High-speed double diode
BAW56
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
1999 May 11
EUROPEAN
PROJECTION
7
Philips Semiconductors
Product specification
High-speed double diode
BAW56
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 11
8
Philips Semiconductors
Product specification
High-speed double diode
BAW56
NOTES
1999 May 11
9
Philips Semiconductors
Product specification
High-speed double diode
BAW56
NOTES
1999 May 11
10
Philips Semiconductors
Product specification
High-speed double diode
BAW56
NOTES
1999 May 11
11
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© Philips Electronics N.V. 1999
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115002/00/03/pp12
Date of release: 1999 May 11
Document order number:
9397 750 05948