INFINEON Q62702

BDP 951
NPN Silicon AF Power Transistors
• For AF drivers and output stages
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BDP952...BDP956 (PNP)
Type
Marking Ordering Code
Pin Configuration
Package
BDP 951
BDP 951 Q62702-D1339
1=B
2=C
3=E
4=C
SOT-223
BDP 953
BDP 953 Q62702-D1341
1=B
2=C
3=E
4=C
SOT-223
BDP 955
PDP 955 Q62702-D1343
1=B
2=C
3=E
4=C
SOT-223
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
Values
V
BDP 951
80
BDP 953
100
BDP 955
120
Collector-base voltage
Unit
VCBO
BDP 951
100
BDP 953
120
BDP 955
140
Emitter-base voltage
VEBO
5
DC collector current
IC
3
Peak collector current
ICM
5
Base current
IB
200
Peak base current
IBM
500
Total power dissipation, TS = 99°C
Ptot
3
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
A
mA
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
Junction - soldering point
RthJA
≤ 42
RthJS
≤ 17
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group
1
Nov-28-1996
BDP 951
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
V
V(BR)CEO
IC = 10 mA, IB = 0 mA, BDP 951
80
-
-
IC = 10 mA, IB = 0 mA, BDP 953
100
-
-
IC = 10 mA, IB = 0 mA, BDP 955
120
-
-
IC 100 µA, IB = 0 , BDP 951
100
-
-
IC = 100 µA, IB = 0 , BDP 953
120
-
-
IC = 100 µA, IB = 0 , BDP 955
140
-
-
5
-
-
VCB = 100 V, IE = 0 , TA = 25 °C
-
-
100
nA
VCB = 100 V, IE = 0 , TA = 150 °C
-
-
20
µA
Collector-base breakdown voltage
Base-emitter breakdown voltage
V(BR)CBO
V(BR)EBO
IE = 10 µA, IC = 0
Collector cutoff current
Emitter cutoff current
ICBO
IEBO
VEB = 4 V, IC = 0
DC current gain
nA
-
-
100
hFE
-
IC = 10 mA, VCE = 5 V
25
-
-
IC = 500 mA, VCE = 1 V
40
-
475
IC = 2 A, VCE = 2 V
15
-
-
Collector-emitter saturation voltage 1)
VCEsat
IC = 2 A, IB = 0.2 A
Base-emitter saturation voltage 1)
V
-
-
0.8
-
-
1.5
VBEsat
IC = 2 A, IB = 0.2 A
AC Characteristics
Transition frequency
fT
IC = 50 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
MHz
-
100
-
Ccb
VCB = 10 V, f = 1 MHz
pF
-
25
-
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
2
Nov-28-1996
BDP 951
Total power dissipation Ptot = f (TA*;TS)
* Package mounted on epoxy
Permissible Pulse Load RthJS = f(tp)
10 3
3.2
K/W
TS
W
TA
Ptot
RthJS
10 2
2.4
2.0
10 1
1.6
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
1.2
0.8
10 -1
0.4
0.0
0
20
40
60
80
100
10 -2
-6
10
120 °C 150
TA ,TS
10
-5
10
-4
10
-3
10
-2
-1
10
s 10
tp
0
Permissible Pulse Load Ptotmax / PtotDC = f(tp) DC current gain hFE = f (IC)
VCE = 2V
10 3
10 3
-
-
Ptotmax/P totDC
hFE
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 2
10 1
10 0
-6
10
100°C
25°C
-50°C
10 1
10
-5
Semiconductor Group
10
-4
10
-3
10
-2
-1
10
s 10
tp
0
3
10 0
0
10
10
1
10
2
10
3
mA
IC
Nov-28-1996
BDP 951
Collector cutoff current ICBO = f (TA)
VCB = 45V
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
10 4
10 5
nA
mA
10
4
ICBO
IC
10 3
100°C
25°C
-50°C
10 3
max
10 2
10 2
typ
10 1
10 1
10 0
10 -1
0
20
40
60
80
100
0.2
0.4
V
10 4
10 4
mA
mA
IC
10 3
10 3
-50°C
25°C
100°C
10 2
10 2
10 1
10 1
10 0
0.0
0.2
0.4
Semiconductor Group
0.6
0.8
1.0
0.8
V CEsat
Collector current IC = f (VBE)
VCE = 2V
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
IC
10 0
0.0
120 °C 150
TA
V
1.3
V BEsat
4
10 0
0.0
-50°C
25°C
100°C
0.2
0.4
0.6
0.8
1.0
V
1.3
V BE
Nov-28-1996