BB 814 Silicon Variable Capacitance Diode ● For FM radio tuners with extended frequency band ● High tuning ratio at low supply voltage (car radio) ● Monolithic chip (common cathode) for perfect dual diode tracking ● Coded capacitance groups and group matching available BB 814 Type Ordering Code Pin Configuration (tape and reel) Marking Package BB 814 Q62702-B404 SH (see Characteristics for marking of capacitance subgroups) SOT-23 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage VR 18 V Peak reverse voltage VRM 20 Forward current, TA ≤ 60 ˚C IF 50 Operating temperature range Top – 55 … + 125 ˚C Storage temperature range Tstg – 55 … + 150 Rth JA ≤ mA Thermal Resistance Junction - ambient Semiconductor Group 1 600 K/W 10.94 BB 814 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. – – – – 20 200 DC Characteristics Reverse current VR = 16 V VR = 16 V, TA = 60 ˚C Diode capacitance f = 1 MHz1) VR = 2 V VR = 8 V IR Capacitance ratio VR = 2 V, 8 V, f = 1 MHz nA pF CT 43 19.1 44.75 20.8 46.5 22.7 CT2 CT8 ∆CT CT 2.05 2.15 2.25 – – – 3 % Series resistance VR = 2 V, f = 100 MHz rS – 0.18 – Ω Q factor VR = 2 V, f = 100 MHz Q – 200 – – Capacitance matching VR = 2 V, 8 V 1) Capacitance groups, coded 1, 2 Code CT (2 V) 1 43 … 45 19.1 … 21.95 pF 2 44.5 … 46.5 19.75 … 22.7 CT (8 V) Semiconductor Group Unit pF 2 BB 814 Diode capacitance CT = f (VR) per diode, f = 1 MHz Semiconductor Group Capacitance ratio CTref/CT = f (VR) per diode, Vref = 1 V, 2 V, 3 V, f = 1 MHz 3