INFINEON BTS244Z_09

Speed TEMPFET
BTS244Z
Speed TEMPFET®
®
N-Channel
Enhancement mode
1
Logic Level Input
Analog driving possible
5
PG-TO220-5-62
Fast switching up to 1 MHz
PG-TO220-5-3
Potential-free temperature sensor with
thyristor characteristics
Overtemperature protection •Green Product (RoHS Compliant)
•AEC Qualified
Avalanche rated
Type
BTS 244 Z
VDS
55 V
RDS(on)
Package
13 m
PG-TO220-5-3
PG-TO220-5-43
PG-TO220-5-62
PG-TO-220-5-43
D Pin 3 and TAB
G Pin 1
A Pin 2
Temperature
Sensor
K Pin 4
S Pin 5
Data Sheet
Pin
Symbol
Function
1
G
Gate
2
A
Anode Temperature Sensor
3
D
Drain
4
K
Cathode Temperature Sensor
5
S
Source
1
Rev.1.3, 2009-12-04
Speed TEMPFET
BTS244Z
Maximum Ratings
Parameter
Symbol
Drain source voltage
VDS
V
55
Gate source voltage
VGS
20
Nominal load current (ISO 10483)
ID(ISO)
Drain-gate voltage, RGS = 20 k
DGR
Value
Unit
V
55
A
VGS = 4.5 V, VDS
0.5 V, TC = 85 °C
19
VGS = 10 V, VDS
0.5 V, TC = 85 °C
26
ID
35
Pulsed drain current
ID puls
188
Avalanche energy, single pulse
EAS
1.65
J
Ptot
170
W
-40 ...+175
°C
Continuous drain current 1)
TC = 100 °C, VGS = 4.5V
ID = 19 A, RGS = 25
Power dissipation
TC = 25 °C
Operating temperature 2)
Tj
Peak temperature ( single event )
Tjpeak
Storage temperature
Tstg
200
-55 ... +150
DIN humidity category, DIN 40 040
E
IEC climatic category; DIN IEC 68-1
40/150/56
1current limited by bond wire
2Note: Thermal trip temperature of temperature sensor is below 175°C
Data Sheet
2
Rev.1.3, 2009-12-04
Speed TEMPFET
BTS244Z
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
junction - case:
RthJC
-
-
0.88
Thermal resistance @ min. footprint
Rth(JA)
-
-
62
Thermal resistance @ 6 cm2 cooling area 1)
Rth(JA)
-
33
40
K/W
Electrical Characteristics
Symbol
Parameter
at Tj = 25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
55
-
-
ID = 130 μA
1.2
1.6
2
ID = 250 μA
-
1.65
-
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS
V
VGS = 0 V, ID = 0.25 mA
VGS(th)
Gate threshold voltage, VGS = VDS
IDSS
Zero gate voltage drain current
μA
VDS = 50 V, VGS = 0 V, Tj = -40 °C
-
-
0.1
VDS = 50 V, VGS = 0 V, Tj = 25 °C
-
0.1
1
VDS = 50 V, VGS = 0 V, Tj = 150 °C
-
-
100
IGSS
Gate-source leakage current
nA
VGS = 20 V, VDS = 0 V, Tj = 25 °C
-
10
100
VGS = 20 V, VDS = 0 V, Tj = 150 °C
-
20
100
RDS(on)
Drain-Source on-state resistance
m
VGS = 4.5 V, ID = 19 A
-
16
18
VGS = 10 V, ID = 19 A
-
11.5
13
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for drain
connection. PCB mounted vertical without blown air.
Data Sheet
3
Rev.1.3, 2009-12-04
Speed TEMPFET
BTS244Z
Electrical Characteristics
Parameter
Symbol
at Tj = 25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Forward transconductance
gfs
25
-
-
S
VDS>2*ID *RDS(on)max , ID = 35 A
Input capacitance
Ciss
-
2130
2660
pF
Coss
-
600
750
Crss
-
320
400
td(on)
-
15
25
tr
-
70
105
td(off)
-
40
60
tf
-
25
40
Qg(th)
-
2.5
3.8
Qg(5)
-
50
75
Qg(total)
-
85
130
V(plateau)
-
4.5
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
ns
VDD = 30 V, VGS = 4.5 V, ID = 47 A,
RG = 2.2
Rise time
VDD = 30 V, VGS = 4.5 V, ID = 47 A,
RG = 2.2
Turn-off delay time
VDD = 30 V, VGS = 4.5 V, ID = 47 A,
RG = 2.2
Fall time
VDD = 30 V, VGS = 4.5 V, ID = 47 A,
RG = 2.2
Gate Charge Characteristics
Gate charge at threshold
nC
VDD = 40 V, ID = 0.1 A, VGS = 0 to 1 V
Gate charge at 5.0 V
VDD = 40 V, ID = 47 A, V GS = 0 to 5 V
Gate charge total
VDD = 40 V, ID = 47 A, V GS = 0 to 10 V
Gate plateau voltage
V
VDD = 40 V, ID = 47 A
Data Sheet
4
Rev.1.3, 2009-12-04
Speed TEMPFET
BTS244Z
Electrical Characteristics
Symbol
Parameter
at Tj = 25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
IS
35
-
-
IFM
188
-
-
VSD
-
1.25
1.8
V
trr
-
110
165
ns
Qrr
-
0.23
0.35
μC
Reverse Diode
Inverse diode continuous forward current
A
TC = 25 °C
Inverse diode direct current,pulsed
TC = 25 °C
Inverse diode forward voltage
VGS = 0 V, IF = 94 A
Reverse recovery time
VR = 30 V, IF =IS, diF/dt = 100 A/μs
Reverse recovery charge
VR = 30 V, IF =IS, diF/dt = 100 A/μs
Sensor Characteristics
For temperature sensing, i.e. temperature protection, please consider application note
"Temperature sense concept - Speed TEMPFET”.
For short circuit protection please consider application note "Short circuit behaviour of
the Speed TEMPFET family”.
All application notes are available at http://www.infineon.com/tempfet/
VAK(on)
Forward voltage
V
IAK(on) = 5 mA, Tj = -40...+150 °C
-
1.3
1.4
IAK(on) = 1.5 mA, Tj = 150 °C
-
-
0.9
Sensor override
-
-
10
-
-
5
-
-
600
tP = 100 μs, Tj = -40...+150 °C
IAK(on)
Forward current
mA
Tj = -40...+150 °C
Sensor override
tP = 100 μs, Tj = -40...+150 °C
Data Sheet
5
Rev.1.3, 2009-12-04
Speed TEMPFET
BTS244Z
Electrical Characteristics
Parameter
Symbol
at Tj = 25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
-
-
4
μA
100
-
-
μs
-
-
150
Sensor Characteristics
IAK(off)
Temperature sensor leakage current
Tj = 150 °C
treset
Min. reset pulse duration 1)
Tj = -40...+150 °C, IAK(on) = 0.3 mA,
VAK(Reset)<0.5V
VAK Recovery time1)2)
trecovery
Tj = -40...+150 °C, IAK(on) = 0.3 mA
Characteristics
IAK(hold)
Holding current, VAK(off) = 5V
mA
Tj = 25 °C
0.05
-
0.5
Tj = 150 °C
0.05
-
0.3
TTS(on)
150
160
170
°C
toff
0.5
-
2.5
μs
VAK(reset)
0.5
-
-
V
Thermal trip temperature
VTS = 5V
Turn-off time (Pin G+A and K+S connected)
VTS = 5V, ITS(on) = 2 mA
Reset voltage
Tj = -40...+150°C
Sensor recovery behaviour:
S ensor R E S E T
V A K [V ]
tre s e t
5
4
0
S ensor O N
t re c o v e ry
R eset
OFF
1See diagram Sensor recovery behaviour
2Time after reset pulse until V
AK reaches 4V again
Data Sheet
6
Rev.1.3, 2009-12-04
Speed TEMPFET
BTS244Z
1 Maximum allowable power dissipation
2 Drain current
Ptot = f(TC)
ID = f(TC ); VGS
180
4.5V
40
A
30
120
ID
Ptot
140
25
100
20
80
15
60
10
40
5
20
0
-40
0
40
80
°C
120
0
0
180
20
40
60
80
100 120 140 °C
TC
180
TC
3 Typ. transient thermal impedance
4 Transient thermal impedance
ZthJA=f(tp ) @ 6 cm2 cooling area
ZthJC = f (tp )
Parameter: D=tp /T
parameter : D = tp /T
10 2
10 1
K/W
K/W
10 0
D=0.5
10
1
D=0.5
Z thJC
Z thJA
0.2
0.1
0.2
10 -1
0.05
0.1
0.05
10 0
0.02
0.02
10 -2
0.01
10 -1
0.01
Single pulse
10 -3
Single pulse
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
s
10
10
3
-8
-7
-6
10 10 10 10
tp
Data Sheet
-4
-5
-4
-3
-2
10 10 10 10
-1
0
10 10
1
s 10
3
tp
7
Rev.1.3, 2009-12-04
Speed TEMPFET
BTS244Z
5 Safe operating area
6 Typ. output characteristic
ID=f(VDS ); D=0.01; TC =25°C; VGS =4.5V
ID = f(VDS); Tj =25°C
Parameter: VGS
180
10V
A
7V
140
6V
ID
ID
120
100
5V
80
4.5V
60
4V
40
3.5V
20
3V
0
0
1
V
2
4
VDS
7 On-state resistance
8 On-state resistance
RON = f(Tj ); ID=19A; VGS = 4.5V
RON = f(Tj ); ID=19A; VGS = 10V
40
30
m
m
30
RDS(on)
RDS(on)
max.
typ.
25
20
max.
20
typ.
15
15
10
10
5
5
0
-50
-25
0
25
50
75
100 125 °C
0
-50
175
Tj
Data Sheet
-25
0
25
50
75
100 125 °C
175
Tj
8
Rev.1.3, 2009-12-04
Speed TEMPFET
BTS244Z
9 Typ. transfer characteristics
10 Typ. input threshold voltage
ID = f(VGS); VDS = 12V; Tj = 25°C
VGS(th) = f(Tj); VDS =VGS
Parameter: ID
100
2.4
A
V
2.0
VGS(th)
80
ID
70
60
1.8
130mA
1.6
13mA
1.4
50
1.2
40
1.0
1.3mA
130μA
0.8
30
0.6
20
0.4
10
0.2
0
0
1
2
V
3
0.0
-50
5
-25
0
25
50
75
100 125 °C
VGS
175
Tj
11 Typ. capacitances
12 Typ. forward charcteristics of
C = f(VDS); VGS =0 V, f=1 MHz
reverse diode IF = f(VSD )
tp = 80μs (spread); Parameter: Tj
10 1
10 2
A
nF
150°C
10 1
25°C
C
IF
Ciss
10 0
Coss
10 0
Crss
10 -1
0
4
8
12
16
20
24
28
32
V
10 -1
0.0
40
VDS
Data Sheet
0.2
0.4
0.6
0.8
1.0
1.2
V
1.6
VSD
9
Rev.1.3, 2009-12-04
Speed TEMPFET
BTS244Z
13 Typ. gate charge
14 Drain-source break down voltage
VGS = f(QGate); ID puls = 47A
V(BR)DSS = f(Tj )
BTS 244 Z
66
V
V
V(BR)DSS
16
VGS
12
0,2 VDS max
10
0,8 VDS max
62
60
8
58
6
56
4
54
2
52
0
0
Data Sheet
20
40
60
80
100
50
-40
nC 140
QGate
0
40
80
120
°C
180
Tj
10
Rev.1.3, 2009-12-04
Speed TEMPFET
BTS244Z
Package Outlines
Package Outlines
9.9 ±0.2
A
9.5 ±0.2
4.4
1.3 +0.1
-0.02
B
C
9.2 ±0.2
0.05
1)
10.2 ±0.3
8.6 ±0.3
3.7 -0.15
13
17.5 ±0.3
15.6 ±0.3
6.6
2.8 ±0.2
7.5
3.3 ±0.3
1
0...0.15
0.5 ±0.1
2.4
5 x 0.8 ±0.1
4 x 1.7
0.25
M
A B C
4.5 ±0.3
8.4 ±0.3
1) Shear and punch direction no burrs this surface
Back side, heatsink contour
All metal surfaces tin plated, except area of cut.
Figure 1
PG-TO220-5-3
4.4
9.9
+0.1
8.0
7.5
0.05
1)
3.6 ±0.3
2.4
9.2 ±0.2
1.5 ±0.25
B
(1.3)
6.6
6.5
A
(14.1)
10.5 ±0.15
1.3 -0.02
0...0.15
0.1
0.5 +0.15
5˚
+0.1
+3˚
5 x 0.8 -0.03
4 x 1.7
0.1 B
0.25
M
A B
1) Shear and punch direction no burrs this surface.
Back side, heatsink contour
All metal surfaces tin plated, except area of cut.
P-TO220-5-62-PO V01
Figure 2
Data Sheet
PG-TO220-5-62
11
Rev.1.3, 2009-12-04
Speed TEMPFET
BTS244Z
Package Outlines
9.9 ±0.2
A
9.5 ±0.2
4.4
1.3 +0.1
-0.02
0.05
13.5 ±0.5
1)
9.2 ±0.2
B
3.7 -0.15
13
15.6 ±0.3
17.5 ±0.3
6.6
2.8 ±0.2
7.5
C
0...0.15
0.5 ±0.1
5 x 0.8 ±0.1
4 x 1.7
0.25
2.4
M
A B C
1) Shear and punch direction no burrs this surface
Back side, heatsink contour
All metal surfaces tin plated, except area of cut.
Figure 3
PG-TO220-5-43
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.
Data Sheet
12
Dimensions in mm
Rev.1.3, 2009-12-04
Speed TEMPFET
BTS244Z
Revision History
2
Revision History
Revision
Date
Changes
1.3
2009-12-04
updated package drawing of PG-TO220-5-62
1.2
2009-07-31
removed 100ms and DC line in SOA diagram
1.1
2008-11-10
all pages:
added new Infineon logo
Initial version of RoHS-compliant derivate of the BTS244Z
Page 1 and 12: added RoHS compliance statement and Green product feature
Page 1, 11 and 12: Package changed to RoHS compliant version
page 13: added Revision history
page 14: update of disclaimer
Data Sheet
13
Rev.1.3, 2009-12-04
Edition 2009-12-04
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.