NPN Silicon Darlington Transistors BCV 29 BCV 49 For general AF applications ● High collector current ● High current gain ● Complementary types: BCV 28, BCV 48 (PNP) ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) BCV 29 BCV 49 EF EG Q62702-C1853 Q62702-C1832 B SOT-89 C E C Maximum Ratings Parameter Symbol Values BCV 49 BCV 29 Unit Collector-emitter voltage VCE0 30 60 Collector-base voltage VCB0 40 80 Emitter-base voltage VEB0 10 10 Collector current IC 500 Peak collector current ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 130 ˚C P1tot 1 W Junction temperature Tj 150 ˚C Storage temperature range Tstg V mA – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 75 Junction - soldering point Rth JS ≤ 20 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BCV 29 BCV 49 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCV 29 BCV 49 V(BR)CE0 Collector-base breakdown voltage IC = 100 µA BCV 29 BCV 49 V(BR)CB0 Emitter-base breakdown voltage, IE = 10 µA V(BR)EB0 Collector cutoff current VCB = 30 V VCB = 60 V VCB = 30 V, TA = 150 ˚C VCB = 60 V, TA = 150 ˚C ICB0 BCV 29 BCV 49 BCV 29 BCV 49 Emitter cutoff current, VEB = 4 V IEB0 DC current gain1) IC = 100 µA, VCE = 1 V hFE IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V IC = 0.5 A, VCE = 5 V BCV 29 BCV 49 BCV 29 BCV 49 BCV 29 BCV 49 BCV 29 BCV 49 V 30 60 – – – – 40 80 – – – – 10 – – – – – – – – – – 100 100 10 10 nA nA µA µA – – 100 nA – 4000 2000 10000 4000 20000 10000 4000 2000 – – – – – – – – – – – – – – – – Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA VCEsat – – 1 V Base-emitter saturation voltage1) IC = 100 mA; IB = 0.1 mA VBEsat – – 1.5 Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz fT – 150 – MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo – 3.5 – pF AC characteristics 1) Pulse test: t ≤ 300 µs, D = 2 %. Semiconductor Group 2 BCV 29 BCV 49 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector cutoff current ICB0 = f (TA) Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 3 BCV 29 BCV 49 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 1000 Base-emitter saturation voltage IC = f (VBEsat) hFE = 1000 Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) DC current gain hFE = f (IC) VCE = 5 V Semiconductor Group 4