PHILIPS BSN10A

DISCRETE SEMICONDUCTORS
DATA SHEET
BSN10; BSN10A
N-channel enhancement mode
vertical D-MOS transistors
Product specification
File under Discrete Semiconductors, SC13b
April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
FEATURES
BSN10; BSN10A
QUICK REFERENCE DATA
• Direct interface to C-MOS, TTL,
etc.
SYMBOL
• High-speed switching
• No secondary breakdown.
DESCRIPTION
PARAMETER
MAX.
UNIT
VDS
drain-source voltage
50
V
ID
DC drain current
175
mA
RDS(on)
drain-source on-resistance
15
Ω
VGS(th)
gate-source threshold voltage
1.8
V
N-channel enhancement mode
vertical D-MOS transistor in a TO-92
envelope, intended for use in general
purpose fast switching applications.
ndbook, halfpage
PIN
1
DESCRIPTION
2
3
BSN10
1
gate
2
drain
3
source
d
handbook, 2 columns
PINNING - TO-92
g
MSB033
MBB076 - 1
s
BSN10A
1
source
2
gate
3
drain
Fig.1 Simplified outline (TO-92) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−
50
V
−
20
V
DC drain current
−
175
mA
peak drain current
−
300
mA
−
830
mW
storage temperature range
−65
150
°C
junction temperature
−
150
°C
VDS
drain-source voltage
±VGSO
gate-source voltage
ID
IDM
Ptot
total power dissipation
Tstg
Tj
open drain
up to Tamb = 25 °C (note 1)
THERMAL RESISTANCE
SYMBOL
Rth j-a
PARAMETER
from junction to ambient (note 1)
Note
1. Device mounted on a printed circuit board, maximum lead length 4 mm.
April 1995
2
THERMAL RESISTANCE
150 K/W
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN10; BSN10A
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS
drain-source breakdown voltage
MIN.
ID = 10 µA; VGS = 0
50
TYP.
−
MAX.
−
UNIT
V
IDSS
drain-source leakage current
VDS = 40 V; VGS = 0
−
−
1
µA
±IGSS
gate-source leakage current
±VGS = 20 V; VDS = 0
−
−
100
nA
VGS(th)
gate-source threshold voltage
ID = 1 mA; VGS = VDS
0.4
−
1.8
V
RDS(on)
drain-source on-resistance
ID = 100 mA; VGS = 10 V
−
8
15
Ω
ID = 100 mA; VGS = 5 V
−
12
20
Ω
ID = 10 mA; VGS = 2.5 V
−
18
30
Ω
 Yfs
transfer admittance
ID = 100 mA; VDS = 10 V
40
80
−
mS
Ciss
input capacitance
VDS = 10 V; VGS = 0; f = 1 MHz
−
8
15
pF
Coss
output capacitance
VDS = 10 V; VGS = 0; f = 1 MHz
−
7
15
pF
Crss
feedback capacitance
VDS = 10 V; VGS = 0; f = 1 MHz
−
2
5
pF
Switching times
ton
turn-on time
ID = 100 mA; VDD = 20 V;
VGS = 0 to 10 V
−
2
5
ns
toff
turn-off time
ID = 100 mA; VDD = 50 V;
VGS = 0 to 10 V
−
5
10
ns
handbook,
MDA690
1
MRA781
handbook,30
halfpage
Ptot
C
(pF)
(W)
0.8
20
0.6
0.4
10
(1)
(2)
0.2
(3)
0
0
50
100
0
150
200
Tamb (°C)
0
5
10
15
20
25
VDS (V)
VGS = 0; f = 1 MHz; Tj = 25 °C.
Fig.2 Power derating curve.
April 1995
Fig.3
3
Capacitance as a function of drain-source
voltage, typical values.
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN10; BSN10A
handbook, halfpage
MRA782
VGS = 10 V
500
ID
(mA)
400
MRA783
500
handbook, halfpage
7V
ID
(mA)
400
5V
300
4V
200
300
200
3V
100
0
100
2.5 V
0
0
4
8
VDS (V)
12
Tj = 25 °C.
0
2
4
6
8
VDS = 10 V; Tj = 25 °C.
Fig.4 Typical output characteristics.
Fig.5 Typical transfer characteristics.
MRA788
24
handbook, halfpage
10
VGS (V)
4V
VGS = 2.5 V
MRA787
80
5V
handbook, halfpage
RDSon
RDSon
(Ω)
(Ω)
60
7V
16
40
10 V
8
20
0
1
10
102
ID (mA)
0
103
0
Tj = 25 °C.
Fig.6
April 1995
2
4
6
8
10
VGS (V)
VDS = 0.1 V; Tj = 25 °C.
Drain-source on-resistance as a function of
drain current, typical values.
Fig.7
4
Drain-source on-resistance as a function of
gate-source voltage, typical values.
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN10; BSN10A
MRA785
MRA784
2
handbook, halfpage
handbook,1.2
halfpage
k
k
(2)
1.1
1.6
(1)
1
1.2
0.9
0.8
0.8
0.4
−50
0
50
100
Tj (oC)
0.7
−50
150
0
50
100
Tj (oC)
150
R DS ( on ) at T j
k = ------------------------------------------------ .
R DS ( on ) at 25 °C
V GS ( th ) at T j
k = ---------------------------------------.
V GS ( th ) 25 °C
Typical RDS(on) at 100 mA/10 V.
(1) ID = 10 mA; VGS = 2.5 V.
(2) ID = 100 mA; VGS = 10 V.
Fig.8
April 1995
Typical VGS(th) at 1 mA.
Temperature coefficient of drain-source
on-resistance.
Fig.9
5
Temperature coefficient gate-source
threshold voltage.
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN10; BSN10A
PACKAGE OUTLINES
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
e
e1
L
L1(1)
mm
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
April 1995
REFERENCES
IEC
JEDEC
EIAJ
TO-92
SC-43
6
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN10; BSN10A
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1995
7
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© Philips Electronics N.V. 1997
SCA54
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137107/00/01/pp8
Date of release: April 1995
Document order number:
9397 750 02459