DISCRETE SEMICONDUCTORS DATA SHEET BFG11; BFG11/X NPN 2 GHz RF power transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors 1995 Apr 07 Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG11; BFG11/X FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package. • High efficiency • Small size discrete power amplifier MARKING • 1.9 GHz operating area TYPE NUMBER • Gold metallization ensures excellent reliability. APPLICATIONS CODE BFG11 N72 BFG11/X N73 • Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz. PINNING PIN DESCRIPTION handbook, 2 columns 4 3 BFG11 (see Fig.1) 1 collector 2 base 3 emitter 1 4 emitter Top view 2 MSB014 BFG11/X (see Fig.1) 1 collector 2 emitter 3 base 4 emitter Fig.1 SOT143. QUICK REFERENCE DATA RF performance at Tamb = 25 °C in a common-emitter test circuit (see Fig.7). MODE OF OPERATION f (GHz) VCE (V) PL (mW) Gp (dB) ηc (%) Pulsed, class-AB, duty cycle < 1 : 8 1.9 3.6 400 ≥4 ≥50 1995 Apr 07 2 Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG11; BFG11/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 8 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 500 mA IC(AV) average collector current − 500 mA Ptot total power dissipation − 400 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C up to Ts = 60 °C; note 1; see Fig.2 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point up to Ts = 60 °C; note 1; Ptot = 400 mW Note to the “Limiting values” and “Thermal characteristics” 1. Ts is the temperature at the soldering point of the collector pin. MLC818 500 P tot handbook, halfpage (mW) 400 300 200 100 0 0 50 100 150 o 200 Ts ( C) Fig.2 Power derating curve. 1995 Apr 07 3 VALUE UNIT 290 K/W Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG11; BFG11/X CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 0.1 mA; IE = 0 20 − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA; IB = 0 8 − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.1 mA; IC = 0 2.5 − V ICES collector cut-off current VCE = 8 V; VBE = 0 − 100 µA hFE DC current gain IC = 100 mA; VCE = 5 V 25 − Cc collector capacitance IE = ie = 0; VCB = 3.6 V; f = 1 MHz − 4 pF Cre feedback capacitance IC = 0; VCE = 3.6 V; f = 1 MHz − 3 pF MLC848 4 handbook, halfpage Cc (pF) 3 2 1 0 0 2 4 6 8 10 V CB (V) IC = 0; f = 1 MHz. Fig.3 1995 Apr 07 Collector capacitance as a function of collector-base voltage; typical values. 4 Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG11; BFG11/X APPLICATION INFORMATION RF performance at Tamb = 25 °C in a common-emitter test circuit (see Fig.7). MODE OF OPERATION f (GHz) VCE (V) ICQ (mA) PL (mW) Pulsed, class-AB, duty cycle < 1 : 8 1.9 3.6 1 400 Gp (dB) ηc (%) ≥4 ≥50 typ. 5 typ. 70 Ruggedness in class-AB operation The BFG11 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated output power under pulsed conditions up to a supply voltage of 8 V, f = 1.9 GHz and a duty cycle of 1 : 8. MLC849 MLC850 100 ηc 8 handbook, halfpage Gp (dB) ηc 800 handbook, halfpage PL (mW) (%) 80 600 4 60 400 2 40 200 20 800 P L (mW) 0 6 Gp 0 0 200 400 600 0 100 200 PD (mW) Pulsed, class-AB operation. Pulsed, class-AB operation. VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8. Circuit optimized for PL = 400 mW. VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8. Circuit optimized for PL = 400 mW. Fig.4 1995 Apr 07 Power gain and collector efficiency as functions of load power; typical values. Fig.5 5 300 Load power as a function of drive power; typical values. Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG11; BFG11/X SPICE parameters for the BFG11 crystal SEQUENCE No. PARAMETER VALUE SEQUENCE No. UNIT PARAMETER VALUE UNIT 1 IS 3.338 fA 36(1) VJS 750.0 mV 2 BF 97.14 − 37(1) MJS 0.000 − 3 NF 0.988 − 38 FC 0.742 − 4 VAF 31.40 V Note 5 IKF 51.45 A 6 ISE 23.53 pA 1. These parameters have not been extracted, the default values are shown. 7 NE 2.386 − 8 BR 13.73 − 9 NR 0.989 − 10 VAR 2.448 V 11 IKR 100.0 A 12 ISC 54.10 fA 13 NC 1.224 − 14 RB 1.740 Ω 15 IRB 1.000 µA 16 RBM 1.740 Ω 17 RE 59.65 mΩ 18 RC 0.124 Ω 19(1) XTB 0.000 − 20(1) EG 1.110 eV 21(1) XTI 3.000 − 22 CJE 9.555 pF 23 VJE 0.600 V 24 MJE 0.315 − 25 TF 12.96 ps 26 XTF 400.0 − 27 VTF 0.866 V 28 ITF 5.940 A Cbe 84 fF 29 PTF 0.000 deg Ccb 17 fF 30 CJC 4.274 pF Cce 191 fF 31 VJC 0.650 V L1 0.12 nH 32 MJC 0.392 − L2 0.21 nH C cb handbook, halfpage L1 LB B L2 B' C be C' E' C Cce LE MBC964 L3 E QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc); fc = scaling frequency = 100 MHz. Fig.6 Package equivalent circuit SOT143. List of components (see Fig.6) DESIGNATION VALUE UNIT 33 XCJC 0.150 − L3 0.06 nH 34(1) TR 0.000 ns LB 0.95 nH 35(1) CJS 0.000 F LE 0.40 nH 1995 Apr 07 6 Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG11; BFG11/X Test circuit information handbook, full pagewidth R2 V bias VS R1 T1 ,, ,, ,, ,, ,, ,,,, C14 ,,, , , ,,,, L11 C11, C12, C13 L10 L8 C10 C9 L9 50 Ω input L3 C1 L1 L7 DUT L5 L4 L2 C2 C15 C3, C4, C5 L6 C6, C7 50 Ω output C8 MLC851 Fig.7 Common-emitter test circuit for class-AB operation at 1900 MHz. 1995 Apr 07 7 Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG11; BFG11/X List of components used in test circuit (see Fig.8) COMPONENT DESCRIPTION VALUE C1, C8, C9, C10 multilayer ceramic chip capacitor; note 1 24 pF C2 multilayer ceramic chip capacitor; note 1 0.4 pF C3 multilayer ceramic chip capacitor; note 1 0.6 pF C4, C7 multilayer ceramic chip capacitor; note 1 1 pF C5, C6, multilayer ceramic chip capacitor; note 1 1.5 pF C11, C12,C13 multilayer ceramic chip capacitor; note 1 10 nF 10 V; 470 µF DIMENSIONS CATALOGUE N0. C14, C15 electrolytic capacitor L1 stripline; note 2 length 4 mm width 0.93 mm 2222 031 34471 L2 stripline; note 2 length 26 mm width 0.93 mm L3 stripline; note 2 length 1.9 mm width 0.93 mm L4 stripline; note 2 length 3.1 mm width 0.93 mm L5 stripline; note 2 length 1.8 mm width 0.93 mm L6 stripline; note 2 length 26.4 mm width 0.93 mm L7 stripline; note 2 length 10 mm width 0.93 mm L8 stripline; note 2 length 4.4 mm width 0.4 mm L9 stripline; note 2 length 19.3 mm width 0.93 mm L10 stripline; note 2 length 19.7 mm width 0.4 mm L11 micro choke T1 BD228 R1 metal film resistor 20 Ω; 0.4 W 2322 157 10209 R2 metal film resistor 265 Ω; 0.4 W 2322 157 12651 Notes 1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 2. The striplines are on a 1⁄32 inch double copper-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 6). 1995 Apr 07 8 Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG11; BFG11/X handbook, full pagewidth 60 Collector Base 70 V bias R2 T1 R1 L11 C14 L10 C12 C11 C10 C15 VS L9 L8 C13 C9 C4 C5 L7 C6 C8 C1 C2 L1 L2 Base C3 L3 L4 L5 C7 Collector L6 MLC852 Dimensions in mm. The components are situated on one side of the copper-clad PTFE microfibre-glass board, the other side is not etched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.8 Printed-circuit board and component lay-out for common-emitter test circuit in Fig.7. 1995 Apr 07 9 Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG11; BFG11/X PACKAGE OUTLINE handbook, full pagewidth 0.75 0.60 3.0 2.8 0.150 0.090 B 1.9 4 3 0.1 max o 10 max 0.2 M A B A 1.4 1.2 2.5 max o 10 max 1 1.1 max o 30 max 0.88 2 0 0.1 0.48 0 0.1 0.1 M A B MBC845 1.7 TOP VIEW Dimensions in mm. Fig.9 SOT143. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Apr 07 10 Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG11; BFG11/X NOTES 1995 Apr 07 11 Philips Semiconductors – a worldwide company Argentina: IEROD, Av. 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No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 123055/1500/03/pp12 Document order number: Date of release: 1995 Apr 07 9397 750 00017