DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2047 UHF power LDMOS transistor Product specification Supersedes data of 1999 Jul 01 1999 Dec 02 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047 FEATURES PINNING • High power gain PIN DESCRIPTION • Easy power control 1 drain • Excellent ruggedness 2 gate • Source on underside eliminates DC isolators, reducing common mode inductance 3 source connected to flange • Designed for broadband operation (1.8 to 2.2 GHz). • Internal input and output matching for high gain and efficiency handbook, halfpage 1 APPLICATIONS • Common source class-AB operation for PCN and PCS applications in the 1800 to 2200 MHz frequency range. 2 Top view 3 MBK394 DESCRIPTION Fig.1 Simplified outline SOT502A. Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange SOT502A package with a ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION Two-tone, class-AB f (MHz) f1 = 2200; f2 = 2200.1 VDS (V) PL (W) Gp (dB) ηD (%) dim (dBc) 26 65 (PEP) >10 >30 ≤−25 28 65 (PEP) typ. 12.6 typ. 31 typ. −29 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 1999 Dec 02 2 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VDS drain-source voltage − 65 V VGS gate-source voltage − ±15 V ID DC drain current − 9 A Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL Rth j-h PARAMETER CONDITIONS VALUE thermal resistance from junction to heatsink Th = 25 °C, Ptot = 152 W, note 1 1.15 UNIT K/W Note 1. Determined under specified RF operating conditions, based on maximum peak junction temperature. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 1.4 mA 65 − − V VGSth gate-source threshold voltage VDS = 10 V; ID = 140 mA 1.5 − 3.5 V IDSS drain-source leakage current VGS = 0; VDS = 26 V − − 10 µA IDSX on-state drain current VGS =VGSth + 9 V; VDS = 10 V 18 − − A IGSS gate leakage current VGS = ±15 V; VDS = 0 − − 250 nA gfs forward transconductance VDS = 10 V; ID = 5 A − 4 − S RDSon drain-source on-state resistance VGS =VGSth + 9 V; ID = 5 A − 0.17 − Ω Crss feedback capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 3.4 − pF 1999 Dec 02 3 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047 APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 °C; Rth j-h = 1.15 K/W; unless otherwise specified. f (MHz) MODE OF OPERATION IDQ (mA) PL (W) 26 400 65 (PEP) >10 >30 ≤−25 28 400 65 (PEP) typ. 12.6 typ. 31 typ. −29 f1 = 2200; f2 = 2200.1 Two-tone, class-AB ηD (%) VDS (V) Gp (dB) dim (dBc) Ruggedness in class-AB operation The BLF2047 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; IDQ = 400 mA; PL = 65 W (CW); f = 2200 MHz. MGS914 MGS913 50 15 handbook, halfpage ηD Gp Gp (%) (dB) 30 ηD 40 30 ηD 10 10 5 0 20 40 20 20 10 10 0 60 80 PL (PEP) (W) 5 0 VDS = 26 V; IDQ = 400 mA; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz. Fig.2 ηD (%) Gp (dB) 40 Gp 50 15 handbook, halfpage 40 0 60 80 PL (PEP) (W) VDS = 26 V; IDQ = 400 mA; Th ≤ 25 °C; f1 = 2200 MHz; f2 = 2200.1 MHz. Power gain and drain efficiency as functions of peak envelope load power; typical values. 1999 Dec 02 20 Fig.3 4 Power gain and drain efficiency as functions of peak envelope load power; typical values. Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047 MGS915 0 MGS916 0 handbook, halfpage handbook, halfpage dim (dBc) dim (dBc) −20 −20 d3 d3 d5 −40 −60 d5 −40 d7 0 20 40 60 −60 80 100 PL (PEP) (W) d7 0 20 40 60 VDS = 26 V; IDQ = 400 mA; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz. VDS = 26 V; IDQ = 400 mA; Th ≤ 25 °C; f1 = 2200 MHz; f2 = 2200.1 MHz. Fig.4 Fig.5 Intermodulation distortion as a function of peak envelope load power; typical values. 80 100 PL (PEP) (W) Intermodulation distortion as a function of peak envelope load power; typical values. MGS917 0 handbook, halfpage d3 (dBc) −20 (1) (2) (3) −40 −60 0 20 40 60 80 100 PL (PEP) (W) VDS = 26 V; Th ≤ 25 °C; f1 = 2200 MHz; f2 = 2200.1 MHz. (1) IDQ = 350 mA. (2) IDQ = 400 mA. (3) IDQ = 450 mA. Fig.6 1999 Dec 02 5 Intermodulation distortion as a function of peak envelope load power; typical values. Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047 MGS918 8 MGS919 8 handbook, halfpage handbook, halfpage ZL (Ω) Zi (Ω) 4 ri 4 RL 0 0 xi −4 1.6 2 1.8 2.2 XL −4 2.4 −8 1.6 2.6 1.8 2 2.2 2.4 f (GHz) 2.6 f (GHz) VDS = 26 V; IDQ = 400 mA; PL = 80 W; Th ≤ 25 °C. VDS = 26 V; IDQ = 400 mA; PL = 80 W; Th ≤ 25 °C. Fig.7 Fig.8 Input impedance as a function of frequency (series components); typical values. Load impedance as a function of frequency (series components); typical values. F1 handbook, full pagewidth R2 R1 VDD Vgate C10 C5 C11 C12 C13 C14 L13 L4 C9 C4 L11 L10 L6 L15 L2 input 50 Ω L17 L8 C8 C3 L20 L1 L3 C2 L5 L7 L12 L9 L14 L16 C6 C1 L18 L19 output 50 Ω C7 MGS920 Fig.9 Class-AB test circuit at f = 2.2 GHz. 1999 Dec 02 6 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047 List of components (See Figs 9 and 10) COMPONENT DESCRIPTION VALUE C1, C2, C6, C7 Tekelec variable capacitor; type 37281 DIMENSIONS CATALOGUE NO. 0.4 to 2.5 pF C3, C8 multilayer ceramic chip capacitor; note 1 12 pF C4, C9 multilayer ceramic chip capacitor; note 2 12 pF C5, C12 electrolytic capacitor C10 multilayer ceramic chip capacitor; note 1 1 nF C11 multilayer ceramic chip capacitor 10 µF; 100 V 2222 037 59109 100 nF C13 tantal SMD capacitor 4.5 µF; 50 V C14 electrolytic capacitor 100 µF; 63 V F1 Ferroxcube chip-bead 8DS3/3/8/9-4S2 2222 581 16641 2222 037 58101 4330 030 36301 L1 stripline; note 3 50 Ω 2.9 × 2.4 mm L2 stripline; note 3 14.5 Ω 4 × 11.7 mm L3 stripline; note 3 50 Ω 3.7 × 2.4 mm L4 stripline; note 3 6Ω 2 × 30.8 mm L5 stripline; note 3 50 Ω 3.6 × 2.4 mm L6 stripline; note 3 9.5 Ω 3 × 18.8 mm L7 stripline; note 3 50 Ω 7.8 × 2.4 mm L8 stripline; note 3 9.8 Ω 4 × 18.3 mm L9 stripline; note 3 24.4 Ω 5 × 6.3 mm L10, L11 stripline; note 3 5.1 Ω 7 × 37 mm L12 stripline; note 3 25.4 Ω 10.1 × 6 mm L13 stripline; note 3 5.7 Ω 2.4 × 32.8 mm L14 stripline; note 3 25.4 Ω 7.4 × 6 mm L15 stripline; note 3 11.3 Ω 2.5 × 15.6 mm L16 stripline; note 3 50 Ω 10.8 × 2.4 mm L17 stripline; note 3 16.1 Ω 3 × 10.4 mm L18 stripline; note 3 50 Ω 2.3 × 2.4 mm L19 stripline; note 3 50 Ω 3 × 2.4 mm L20 stripline; note 3 50 Ω 5.5 × 2.4 mm R1, R2 metal film resistor 10 Ω, 0.6 W 2322 156 11009 Notes 1. American Technical Ceramics type 100B or capacitor of same quality. 2. American Technical Ceramics type 100A or capacitor of same quality. 3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (εr = 2.2); thickness 0.79 mm. 1999 Dec 02 7 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047 50 handbook, full pagewidth 50 95 BLF2047 INPUT BLF2047 OUTPUT PH990109 PH990110 VDD VGS R2 C14 C13 C5 R1 F1 C12 C11 C10 C9 C4 C8 C3 C2 C1 C6 C7 BLF2047 INPUT BLF2047 OUTPUT PH990109 PH990110 MGS921 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr = 2.2), thickness 0.79 mm. The other side is unetched and serves as a ground plane. Fig.10 Component layout for 2.2 GHz class-AB test circuit. 1999 Dec 02 8 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047 PACKAGE OUTLINE Flanged LDMOST package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.99 12.83 12.57 0.15 0.08 inches 0.186 0.157 0.505 0.006 0.495 0.003 OUTLINE VERSION D E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D1 0.045 0.785 0.035 0.745 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-06-07 99-10-13 SOT502A 1999 Dec 02 0.210 0.133 0.170 0.123 9 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125002/04/pp12 Date of release: 1999 Dec 02 Document order number: 9397 750 06449