PHILIPS 1N4531

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D050
1N4531; 1N4532
High-speed diodes
Product data sheet
Supersedes data of April 1996
1996 Sep 03
NXP Semiconductors
Product data sheet
High-speed diodes
1N4531; 1N4532
FEATURES
DESCRIPTION
• Hermetically sealed leaded glass
SOD68 (DO-34) package
The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar
technology, and encapsulated in hermetically sealed leaded glass
SOD68 (DO-34) packages.
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 75 V
k
handbook, halfpage
a
• Repetitive peak forward current:
max. 450 mA.
MAM156
The diodes are type branded.
APPLICATIONS
• High-speed switching
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
• Protection diodes in reed relays.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
−
75
V
VR
continuous reverse voltage
−
75
V
IF
continuous forward current
−
200
mA
IFRM
repetitive peak forward current
−
450
mA
IFSM
non-repetitive peak forward current
t = 1 µs
−
4
A
t = 1 ms
−
1
A
t=1s
−
0.5
A
see Fig.2
square wave; Tj = 25 °C prior to
surge; see Fig.4
Ptot
total power dissipation
−
500
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
−
200
°C
1996 Sep 03
Tamb = 25 °C
2
mW
NXP Semiconductors
Product data sheet
High-speed diodes
1N4531; 1N4532
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
−
1 000
mV
VR = 20 V
−
25
nA
VR = 20 V; Tj = 150 °C
−
50
µA
VR = 50 V
−
100
nA
VR = 50 V; Tj = 150 °C
−
100
µA
IN4531
−
4
pF
IN4532
−
2
pF
when switched from IF = 10 mA to
IR = 60 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.7
−
4
ns
−
2
ns
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.7
−
4
ns
−
3
V
VF
forward voltage
IF = 10 mA; see Fig.3
IR
reverse current
see Fig.5
IN4531
IN4532
Cd
trr
diode capacitance
reverse recovery time
IN4531
IN4532
reverse recovery time
IN4532
Vfr
forward recovery voltage
UNIT
f = 1 MHz; VR = 0; see Fig.6
when switched from IF = 100 mA;
tr ≤ 30 ns; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length 5 mm
120
K/W
Rth j-a
thermal resistance from junction to ambient
lead length 5 mm; note 1
350
K/W
Note
1. Device mounted on a printed circuit-board without metallization pad.
1996 Sep 03
3
NXP Semiconductors
Product data sheet
High-speed diodes
1N4531; 1N4532
GRAPHICAL DATA
MBG450
300
MBG458
600
handbook, halfpage
handbook, halfpage
IF
(mA)
IF
(mA)
200
400
(1)
(3)
200
100
0
0
0
Tamb (oC)
100
0
200
1
2
VF (V)
(1) Tj = 175 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Lead length 5 mm.
Fig.2
(2)
Maximum permissible continuous forward
current as a function of ambient temperature.
Fig.3
Forward current as a function of forward
voltage.
MBG704
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 03
4
104
NXP Semiconductors
Product data sheet
High-speed diodes
1N4531; 1N4532
MGD004
MGD010
103
handbook, halfpage
1.2
handbook, halfpage
IR
(µA)
Cd
(pF)
102
1.0
10
0.8
1
0.6
10−1
10−2
0
100
Tj (oC)
0.4
200
0
VR = 50 V
Solid line; maximum values.
Dotted line; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5
Fig.6
Reverse current as a function of junction
temperature.
1996 Sep 03
5
10
VR (V)
20
Diode capacitance as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
High-speed diodes
1N4531; 1N4532
handbook, full pagewidth
tr
tp
t
D.U.T.
10%
IF
RS = 50 Ω
IF
SAMPLING
OSCILLOSCOPE
t rr
t
R = 50 Ω
i
V = VR I F x R S
(1)
90%
VR
MGA881
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
I
V
90%
R S = 50 Ω
D.U.T.
OSCILLOSCOPE
V fr
R i = 50 Ω
10%
MGA882
t
tr
input
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
1996 Sep 03
6
t
tp
output
signal
NXP Semiconductors
Product data sheet
High-speed diodes
1N4531; 1N4532
PACKAGE OUTLINE
handbook, full pagewidth
0.55
max
1.6
max
25.4 min
3.04
max
25.4 min
Dimensions in mm.
Fig.9 SOD68 (DO-34).
1996 Sep 03
7
MSA212 - 1
NXP Semiconductors
Product data sheet
High-speed diodes
1N4531; 1N4532
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1996 Sep 03
8
NXP Semiconductors
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Printed in The Netherlands
Date of release: 1996 Sep 03