PHILIPS BGY241

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D373
BGY241
UHF amplifier module
Product specification
Supersedes data of 1999 May 01
1999 Sep 09
Philips Semiconductors
Product specification
UHF amplifier module
BGY241
FEATURES
PINNING - SOT482C
• 3.5 V nominal supply voltage
PIN
DESCRIPTION
• 35 dBm output power
1
RF input
• Easy output power control by DC voltage.
2
VC
3
VS
APPLICATIONS
4
RF output
• Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in the
880 to 915 MHz frequency range.
5
ground
handbook, halfpage
DESCRIPTION
5
The BGY241 is a three-stage UHF amplifier module in a
SOT482C leadless package with a plastic cover.
The module consists of one NPN silicon planar transistor
die and one bipolar monolithic integrated circuit mounted
together with matching and bias circuit components on a
metallized ceramic substrate.
4
3
2
Bottom view
1
MBK201
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C.
MODE OF
OPERATION
Pulsed; δ = 1 : 8
f
(MHz)
VS
(V)
VC
(V)
PL
(dBm)
Gp
(dB)
η
(%)
ZS; ZL
(Ω)
880 to 915
3.5
≤2.2
35.2
≥35.2
typ. 43
50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VS
PARAMETER
DC supply voltage
CONDITIONS
MIN.
MAX.
UNIT
VC = 0; PD = 0 mW
−
7
V
VC ≥ 0.2 V
−
5.5
V
VC
DC control voltage
−
2.7
V
PD
input drive power
−
10
dBm
PL
load power
−
36
dBm
Tstg
storage temperature
−40
+100
°C
Tmb
operating mounting base temperature
−30
+100
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Sep 09
2
Philips Semiconductors
Product specification
UHF amplifier module
BGY241
CHARACTERISTICS
ZS = ZL = 50 Ω; PD = 0 dBm; VS = 3.5 V; VC ≤ 2.2 V; f = 880 to 915 MHz; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs;
unless otherwise specified.
SYMBOL
IQ
PARAMETER
leakage current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VC = 0.2 V; PD = 0 mW
−
−
10
µA
VS = 7 V; VC = 0; PD = 0 mW
−
6
20
mA
−
−
3
mA
ICM
peak control current
PL = 35.2 dBm
PL
load power
VC = 2.2 V
35.2
35.5
−
dBm
VS = 3 V; VC = 2.2 V;
Tmb = −20 to +85 °C
33.6
−
−
dBm
power gain
PL = 35.2 dBm
−
35.2
−
dB
η
efficiency
PL = 34 dBm
35
42
−
%
H2
second harmonic
PL = 35.2 dBm
−
−50
−38
dBc
H3
third harmonic
PL = 35.2 dBm
−
−53
−40
dBc
VSWRin
input VSWR
PL = 5 to 35 dBm
−
−
3:1
stability
VS = 3 to 5 V; PD = −3 to +3 dBm;
VC = 0 to 2.2 V; PL ≤ 35.2 dBm;
VSWR ≤ 6 : 1 through all phases
−
−
−60
dBc
isolation
VC = 0.5 V; PD = 3 dBm
−
−43
−37
dBm
1.5
−
−
MHz
control slope
PL = −5 to +5 dBm
−
240
−
dB/V
noise power
PL = 5 to 35.2 dBm;
bandwidth = 100 kHz;
20 MHz above transmitter band
−
−76
−75
dBm
AM/AM conversion
PD = 3% AM; f = 100 kHz;
PL = 5 to 35.2 dBm
−
12
14
%
AM/PM conversion
PD = −0.5 to +0.5 dBm;
PL = 5 to 35.2 dBm
−
−
2
deg
TX/RX conversion
PL = 35.2 dBm; f = 915 MHz;
PL (925 MHz)/PD (905 MHz)
−
25
30
dB
tr
carrier rise time
PL = 6 to 34 dBm; time to settle within −
−0.5 dB of final PL
1.5
2
µs
tf
carrier fall time
PL = 6 to 34 dBm; time to settle within −
−0.5 dB of final PL
1.5
2
µs
ruggedness
VS = 5 V; PL = 34.8 dBm;
VSWR ≤ 12 : 1 through all phases
no degradation
VS = 4.5 V; VC = 2.3 V;
VSWR ≤ 5 : 1 through all phases
no degradation
Gp
control bandwidth
Pn
1999 Sep 09
3
Philips Semiconductors
Product specification
UHF amplifier module
BGY241
MGS649
MGS648
4
handbook, halfpage
8
handbook, halfpage
880 MHz
915 MHz
PL
(W)
880 MHz
PL
(W)
3
6
2
4
1
2
0
915 MHz
0
1
1.5
2
VC (V)
2.5
2
3
4
ZS = ZL = 50 Ω; VS = 3.5 V; PD = 1 mW;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
ZS = ZL = 50 Ω; VC = 2.2 V; PD = 1 mW;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
Fig.2
Fig.3
Load power as a function of control voltage;
typical values.
5
VS (V)
Load power as a function of supply voltage;
typical values.
MGS650
MGS651
5
50
η
(%)
handbook, halfpage
handbook, halfpage
PL
(W)
915 MHz
880 MHz
40
4
30
3
20
2
10
1
0
880
0
1
0
2
3
4
PL (W)
5
890
900
910
920
f (MHz)
ZS = ZL = 50 Ω; VS = 3.5 V; PD = 1 mW;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
ZS = ZL = 50 Ω; VS = 3.5 V; PD = 1 mW; VC = 2.2 V;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
Fig.4
Fig.5
Efficiency as a function of load power;
typical values.
1999 Sep 09
6
4
Load power as a function of frequency;
typical values.
Philips Semiconductors
Product specification
UHF amplifier module
BGY241
MGS652
MGS653
4
0
handbook, halfpage
handbook, halfpage
H2, H3
VSWRin
(dBc)
−20
3
−40
H3
2
−60
880 MHz
H2
915 MHz
−80
880
1
0
1
2
3
PL (W)
4
890
900
910
920
f (MHz)
ZS = ZL = 50 Ω; VS = 3.5 V; PD = 1 mW;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs
ZS = ZL = 50 Ω; VS = 3.5 V; PD = 1 mW; PL = 2.5 W;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
Fig.6
Fig.7
Input VSWR as a function of load power;
typical values.
MGS654
Harmonics as a function of frequency;
typical values.
MGS655
12
output
AM
(%) 10
5
handbook, halfpage
handbook, halfpage
PL
(W)
4
(1)
(2)
3
880 MHz
915 MHz
8
(3)
(4)
6
2
4
1
2
0
0
20
0
40
60
80
100
Tmb (°C)
0
10
20
30
40
PL (dBm)
ZS = ZL = 50 Ω; PD = 1 mW; VC = 2.2 V; δ = 1 : 8; tp = 575 µs.
(1) VS = 3.5 V; f = 880 MHz.
(2) VS = 3.5 V; f = 915 MHz.
(3) VS = 3.1 V; f = 880 MHz.
(4) VS = 3.1 V; f = 915 MHz.
ZS = ZL = 50 Ω; VS = 3.5 V; PD = 1 mW; Tmb = 25 °C;
∆f = 100 kHz; input amplitude modulation = 3%;
δ = 1 : 8; tp = 575 µs.
Fig.8
Fig.9
Load power as a function of mounting base
temperature; typical values.
1999 Sep 09
5
Output amplitude modulation as a function
of load power; typical values.
Philips Semiconductors
Product specification
UHF amplifier module
BGY241
handbook, full pagewidth
C2
C1
Z1
R1
RF input
Z2
C3
C4
VC
VS
RF output
MGS656
Fig.10 Test circuit.
List of components (see Fig.10)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1,C2
multilayer ceramic chip capacitor
680 pF
2222 851 11681
C3
tantalum capacitor
2.2 µF; 35 V
−
C4
electrolytic capacitor
47 µF; 40 V
2222 030 37479
Z1,Z2
stripline; note 1
50 Ω
R1
metal film resistor
100 Ω; 0.6 W
width 2.33 mm
−
2322 156 11001
Note
1. The striplines are on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr = 2.2);
thickness 1⁄32 inch.
1999 Sep 09
6
Philips Semiconductors
Product specification
UHF amplifier module
BGY241
SOLDERING
The indicated temperatures are those at the solder
interfaces.
MGM159
300
handbook, halfpage
Advised solder types are types with a liquidus less than or
equal to 210 °C.
T
(°C)
Solder dots or solder prints must be large enough to wet
the contact areas.
200
Soldering can be carried out using a conveyor oven, a hot
air oven, an infrared oven or a combination of these
ovens. A double reflow process is permitted.
100
Hand soldering is not recommended because the
soldering iron tip can exceed the maximum permitted
temperature of 250 °C and damage the module.
In case hand soldering is needed, recommendations can
be found in RNR-45-98-A-0485.
0
0
The maximum allowed temperature is 250 °C for a
maximum of 5 seconds.
The maximum ramp-up is 10 °C per second.
2
3
4
t (min)
5
Fig.11 Recommended reflow temperature profile.
The maximum cool-down is 5 °C per second.
Cleaning
The following fluids may be used for cleaning:
• Alcohol
• Bio-Act (Terpene Hydrocarbon)
• Acetone.
Ultrasonic cleaning should not be used since this can
cause serious damage to the product.
1999 Sep 09
1
7
Philips Semiconductors
Product specification
UHF amplifier module
BGY241
4.400
handbook, full pagewidth
4.000
4.000
0
2.5 mm
2.800
3.200
scale
1.800
0.500
0.600
1.400
2.500
1.000
1.800
1.300
14.300
13.500
12.900
10.700
2.250
1.350
(2×)
2.500
4.800 (2×)
1.900
0.800
1.950
0.900
3.200
5.650 (2×)
5.900 (2×)
6.700 (2×)
2.400
13.500
2.250
1.700
1.200
1.300
1.000
0.050
MGS345
0.900
0.900
1.200
1.000
0.600
1.300
Solder land
2.300
3.150
3.700
3.900
Solder paste
Green tape area,
max. height 0.03 mm
Dimensions in mm.
Fig.12 Footprint SOT482C.
1999 Sep 09
0.450
8
Philips Semiconductors
Product specification
UHF amplifier module
BGY241
PACKAGE OUTLINE
Leadless surface mounted package; plastic cap; 4 terminations
e
b
(4×)
e1
e
d
b1 b2
b2
b3
SOT482C
b3
1
2
3
L
4
L1
L2
D
D1
A
c
5
E1
E
pin 1 index
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
b2
b3
c
D
D1
d
E
E1
e
e1
L
L1
L2
mm
1.90
1.59
1.9
1.7
1.4
1.2
0.8
0.6
0.6
0.4
0.70
0.57
13.7
13.3
13.35
13.05
2.0
8.2
7.8
7.85
7.55
2.6
2.4
4.6
4.4
1.15
0.85
2.65
2.35
3.85
3.55
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
99-05-18
99-08-16
SOT482C
1999 Sep 09
EUROPEAN
PROJECTION
9
Philips Semiconductors
Product specification
UHF amplifier module
BGY241
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Sep 09
10
Philips Semiconductors
Product specification
UHF amplifier module
BGY241
NOTES
1999 Sep 09
11
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Internet: http://www.semiconductors.philips.com
SCA 68
© Philips Electronics N.V. 1999
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Printed in The Netherlands
125002/06/pp12
Date of release: 1999
Sep 09
Document order number:
9397 750 06002