PSMN004-36P/36B N-channel enhancement mode field-effect transistor Rev. 01 — 19 November 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PSMN004-36P in SOT78 (TO-220AB) PSMN004-36B in SOT404 (D2-PAK). 2. Features ■ Very low on-state resistance ■ Fast switching. 3. Applications ■ DC to DC converters ■ Switch mode power supplies. 4. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description 1 gate (g) 2 drain (d) 3 source (s) mb drain (d) Simplified outline [1] Symbol mb d mb g MBB076 2 1 3 MBK116 MBK106 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is not possible to make connection to pin 2 of the SOT404 package. 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. s PSMN004-36P/36B Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) Tj = 25 to 175 °C − 36 V ID drain current (DC) Tmb = 25 °C; VGS = 5 V − 75 A Ptot total power dissipation Tmb = 25 °C − 230 W Tj junction temperature − 175 °C RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25°C 3.5 4 mΩ VGS = 5 V; ID = 25 A; Tj = 25°C 4 5 mΩ Min Max Unit 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage (DC) Tj = 25 to 175 °C − 36 V VDGR drain-gate voltage (DC) Tj = 25 to 175 °C; RGS = 20 kΩ − 36 V VGS gate-source voltage (DC) − ±15 V VGSM gate-source voltage tp ≤ 50 µs; pulsed; duty cycle 25 %; Tj ≤ 150 °C − ±20 V ID drain current (DC) Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 − 75 A Tmb = 100 °C; VGS = 5 V; Figure 2 − 75 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 − 240 A Tmb = 25 °C; Figure 1 Ptot total power dissipation − 230 W Tstg storage temperature −55 +175 °C Tj operating junction temperature −55 +175 °C Source-drain diode IS source (diode forward) current (DC) Tmb = 25 °C − 75 A ISM peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs − 240 A Avalanche ruggedness EAS non-repetitive avalanche energy unclamped inductive load; ID = 75 A; tp = 0.1 ms; VDD = 15 V; RGS = 50 Ω; VGS = 5V; starting Tj = 25 °C; − 120 mJ IAS non-repetitive avalanche current unclamped inductive load; VDD = 15 V; RGS = 50 Ω; VGS = 5V; starting Tj = 25 °C − 75 A © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08621 Product data Rev. 01 — 19 November 2001 2 of 13 PSMN004-36P/36B Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa16 120 03ag42 120 (%) ID (%) 80 80 40 40 Pder 0 0 0 50 100 150 0 200 o Tmb ( C) P tot P der = ----------------------- × 100% P ° 50 100 150 200 Tmb (ºC) ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. 03ag44 103 RDS(on) = VDS/ ID ID (A) tp = 10 us 100 us 102 1 ms DC 10 10 ms 100 ms 1 1 102 10 VDS (V) Tmb = 25 °C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08621 Product data Rev. 01 — 19 November 2001 3 of 13 PSMN004-36P/36B Philips Semiconductors N-channel enhancement mode field-effect transistor 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Value Unit Rth(j-mb) thermal resistance from junction to mounting base Figure 4 0.65 K/W Rth(j-a) thermal resistance from junction to ambient vertical in still air; SOT78 package 60 K/W mounted on a printed circuit board; minimum footprint; SOT404 package 50 K/W 7.1 Transient thermal impedance 03ag43 1 Zth j-mb δ = 0.5 (K/W) 10-1 0.2 0.1 0.05 0.02 10-2 δ= P tp T single pulse t tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08621 Product data Rev. 01 — 19 November 2001 4 of 13 PSMN004-36P/36B Philips Semiconductors N-channel enhancement mode field-effect transistor 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 36 − − V Tj = −55 °C 32 − − V 1 1.5 2 V Tj = 175 °C 0.5 − − V Tj = −55 °C − − 2.3 V − 0.05 10 µA Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) gate-source threshold voltage ID = 0.25 mA; VGS = 0 V ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 °C IDSS drain-source leakage current VDS = 30 V; VGS = 0 V Tj = 25 °C Tj = 175 °C − − 500 µA − 1 100 nA Tj = 25 °C − 4 5 mΩ Tj = 175 °C − − 9.25 mΩ − − 5.4 mΩ − 3.5 4 mΩ − 97 − nC − 20 − nC − 39 − nC − 6000 − pF IGSS gate-source leakage current VGS = ±10 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 5 V; ID = 25 A; Figure 7 and 8 VGS = 4.5 V; ID = 25 A; Figure 7 and 8 Tj = 25 °C VGS = 10 V; ID = 25 A; Figure 7 and 8 Tj = 25 °C Dynamic characteristics Qg(tot) total gate charge ID = 75 A; VDD = 15 V; VGS = 5 V; Figure 13 Qgs gate-source charge Qgd gate-drain (Miller) charge Ciss input capacitance Coss output capacitance − 1700 − pF Crss reverse transfer capacitance − 1400 − pF td(on) turn-on delay time tr turn-on rise time td(off) tf VGS = 0 V; VDS = 20 V; f = 1 MHz; Figure 11 VDD = 15 V; RD = 1.2 Ω; VGS = 5 V; RG = 6 Ω; resistive load − 45 − ns − 220 − ns turn-off delay time − 435 − ns turn-off fall time − 320 − ns Source-drain diode VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12 − 0.85 1.2 V VSD source-drain (diode forward) voltage IS = 75 A; VGS = 0 V; Figure 12 − 1.1 − V trr reverse recovery time − 400 − ns Qr recovered charge − 1 − µC IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08621 Product data Rev. 01 — 19 November 2001 5 of 13 PSMN004-36P/36B Philips Semiconductors N-channel enhancement mode field-effect transistor 03ag45 03ag47 80 80 10 V 5 V 2.8 V ID (A) 60 60 Tj = 25 ºC 2.4 V 40 40 20 2.2 V 20 VDS > ID x RDS(ON) ID (A) 2.6 V 175 ºC Tj = 25 ºC VGS = 2 V 0 0 0 0.2 0.4 0.6 -0.2 0.8 1 VDS (V) Tj = 25 °C 0.6 1.4 2.2 VGS (V) 3 Tj = 25 °C and 175 °C; VDS > ID x RDSON Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03ag46 03aa27 0.01 2 RDS(on) Tj = 25 ºC VGS = 2.6V a (Ω) 0.008 1.6 2.8 V 0.006 1.2 0.004 0.8 5V 10 V 0.002 0.4 0 0 0 20 40 60 ID (A) 80 Tj = 25 °C -60 60 120 o Tj ( C) 180 R DSon a = ---------------------------R DSon ( 25 °C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08621 Product data 0 Rev. 01 — 19 November 2001 6 of 13 PSMN004-36P/36B Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa33 2.5 (V) 03aa36 10-1 ID (A) 10-2 VGS(th) max 2 typ 10-3 1.5 min min 1 typ max 10-4 10-5 0.5 10-6 0 -60 0 60 120 o 180 0 0.5 1 Tj ( C) 1.5 2 2.5 3 VGS (V) Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03ag49 105 C (pF) 104 Ciss Coss Crss 103 10-1 1 102 10 VDS (V) VGS = 0 V; f = 1 MHz Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08621 Product data Rev. 01 — 19 November 2001 7 of 13 PSMN004-36P/36B Philips Semiconductors N-channel enhancement mode field-effect transistor 03ag48 80 VGS = 0 V IS (A) 03ag50 10 VGS ID = 75 A (V) VDD = 15 V 8 60 Tj = 25 ºC 6 40 Tj = 25 ºC 175 ºC 4 20 2 0 0 0 0.4 0.8 VSD (V) 1.2 Tj = 25 °C and 175 °C; VGS = 0 V 0 80 120 160 200 QG (nC) ID = 75 A; VDD = 15 V Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 13. Gate-source voltage as a function of gate charge; typical values. © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08621 Product data 40 Rev. 01 — 19 November 2001 8 of 13 PSMN004-36P/36B Philips Semiconductors N-channel enhancement mode field-effect transistor 9. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 b c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) L2 max. p q Q mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.0 2.7 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION REFERENCES IEC SOT78 JEDEC EIAJ 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 00-09-07 01-02-16 Fig 14. SOT78 (TO-220AB). © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08621 Product data Rev. 01 — 19 November 2001 9 of 13 PSMN004-36P/36B Philips Semiconductors N-channel enhancement mode field-effect transistor Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404 A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-06-25 01-02-12 SOT404 Fig 15. SOT404 (D2-PAK) © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08621 Product data Rev. 01 — 19 November 2001 10 of 13 PSMN004-36P/36B Philips Semiconductors N-channel enhancement mode field-effect transistor 10. Revision history Table 6: Revision history Rev Date 01 20011119 CPCN Description Product Data; Initial Version © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08621 Product data Rev. 01 — 19 November 2001 11 of 13 PSMN004-36P/36B Philips Semiconductors N-channel enhancement mode field-effect transistor 11. Data sheet status Data sheet status[1] Product status[2] Definition Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 12. Definitions 13. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 9397 750 08621 Rev. 01 — 19 November 2001 12 of 13 Philips Semiconductors PSMN004-36P/36B N-channel enhancement mode field-effect transistor Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 © Koninklijke Philips Electronics N.V. 2001. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 19 November 2001 Document order number: 9397 750 08621