PHILIPS PBSS2515VS

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS2515VS
15 V low VCEsat NPN double
transistor
Product specification
Supersedes data of 2001 Sep 13
2001 Nov 07
Philips Semiconductors
Product specification
15 V low VCEsat NPN double transistor
FEATURES
PBSS2515VS
QUICK REFERENCE DATA
• 300 mW total power dissipation
SYMBOL
• Very small 1.6 x 1.2 mm ultra thin package
VCEO
collector-emitter voltage
15
V
• Excellent coplanarity due to straight leads
ICM
peak collector current
1
A
• Low collector-emitter saturation voltage
RCEsat
equivalent on-resistance
<500
mΩ
• High current capability
PARAMETER
MAX.
UNIT
PINNING
• Improved thermal behaviour due to flat lead
• Replaces two SC-75/SC-89 packaged low VCEsat
transistors on same PCB area
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
• Reduces required PCB area
2, 5
base
TR1; TR2
• Reduced pick and place costs.
6, 3
collector
TR1; TR2
APPLICATIONS
• General purpose switching and muting
• Low frequency driver circuits
• LCD backlighting
handbook, halfpage
6
• Audio frequency general purpose amplifier applications
5
4
6
5
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
4
TR2
TR1
DESCRIPTION
1
NPN low VCEsat double transistor in a SOT666 plastic
package.
PNP complement: PBSS3515VS.
2
1
3
2
3
MAM447
Top view
MARKING
TYPE NUMBER
PBSS2515VS
2001 Nov 07
MARKING CODE
Fig.1
N9
2
Simplified outline (SOT666) and symbol.
Philips Semiconductors
Product specification
15 V low VCEsat NPN double transistor
PBSS2515VS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor unless otherwise specified
VCBO
collector-base voltage
open emitter
−
15
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current (DC)
−
500
mA
ICM
peak collector current
−
1
A
IBM
peak base current
−
100
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
65
+150
°C
−
300
mW
Tamb ≤ 25 °C; note 1
V
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
notes 1 and 2
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
2001 Nov 07
3
VALUE
UNIT
416
K/W
Philips Semiconductors
Product specification
15 V low VCEsat NPN double transistor
PBSS2515VS
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor unless otherwise specified
−
collector-base cut-off current
VCB = 15 V; IE = 0; Tj = 150 °C
−
−
50
µA
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0
−
−
100
nA
hFE
DC current gain
VCE = 2 V; IC = 10 mA
200
−
−
VCE = 2 V; IC = 100 mA; note 1
150
−
−
VCEsat
collector-emitter saturation
voltage
VCB = 15 V; IE = 0
−
ICBO
100
nA
VCE = 2 V; IC = 500 mA; note 1
90
−
−
IC = 10 mA; IB = 0.5 mA
−
−
25
mV
IC = 200 mA; IB = 10 mA
−
−
150
mV
IC = 500 mA; IB = 50 mA; note 1
−
−
250
mV
RCEsat
equivalent on-resistance
IC = 500 mA; IB = 50 mA; note 1
−
300
<500
mΩ
VBEsat
base-emitter saturation voltage
IC = 500 mA; IB = 50 mA; note 1
−
−
1.1
V
VBE
base-emitter turn-on voltage
VCE = 2 V; IC = 100 mA; note 1
−
−
0.9
V
fT
transition frequency
IC = 100 mA; VCE = 5 V; f = 100 MHz
250
420
−
MHz
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0; f = 1MHz
−
4.4
6
pF
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2001 Nov 07
4
Philips Semiconductors
Product specification
15 V low VCEsat NPN double transistor
MLD643
600
PBSS2515VS
MLD645
1200
VBE
handbook, halfpage
handbook, halfpage
(1)
(mV)
hFE
1000
(1)
400
800
(2)
(2)
600
200
(3)
(3)
400
0
10−1
1
10
102
IC (mA)
200
10−1
103
VCE = 2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
VCE = 2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MLD647
103
handbook, halfpage
1
10
102
IC (mA)
103
Base-emitter voltage as a function of
collector current; typical values.
MLD646
1200
handbook, halfpage
VBEsat
VCEsat
(mV)
(mV)
1000
(1)
102
800
(1)
(2)
600
(2)
(3)
10
(3)
400
1
10−1
1
10
102
IC (mA)
200
10−1
103
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4
Fig.5
Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Nov 07
5
1
10
102
IC (mA)
103
Base-emitter saturation voltage as a
function of collector current; typical values.
Philips Semiconductors
Product specification
15 V low VCEsat NPN double transistor
MLD648
102
handbook, halfpage
PBSS2515VS
MLD644
1200
handbook, halfpage
RCEsat
(Ω)
IC
(mA)
10
800
(3)
(4)
(2)
(1)
(5)
(6)
(1)
(7)
(2)
(8)
(3)
1
400
(9)
(10)
10−1
10−1
1
10
102
IC (mA)
0
103
2
0
4
6
8
10
VCE (V)
Tamb = 25 °C.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) IB = 4.6 mA.
(2) IB = 4.14 mA.
(3) IB = 3.68 mA.
(4) IB = 3.22 mA.
(5) IB = 2.76 mA.
Fig.6
Fig.7
Equivalent on-resistance as a function of
collector current; typical values.
2001 Nov 07
6
(6) IB = 2.3 mA.
(7) IB = 1.84 mA.
(8) IB = 1.38 mA.
(9) IB = 0.92 mA.
(10) IB = 0.46 mA.
Collector current as a function of
collector-emitter voltage; typical values.
Philips Semiconductors
Product specification
15 V low VCEsat NPN double transistor
PBSS2515VS
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
01-01-04
01-08-27
SOT666
2001 Nov 07
EUROPEAN
PROJECTION
7
Philips Semiconductors
Product specification
15 V low VCEsat NPN double transistor
PBSS2515VS
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Nov 07
8
Philips Semiconductors
Product specification
15 V low VCEsat NPN double transistor
NOTES
2001 Nov 07
9
PBSS2515VS
Philips Semiconductors
Product specification
15 V low VCEsat NPN double transistor
NOTES
2001 Nov 07
10
PBSS2515VS
Philips Semiconductors
Product specification
15 V low VCEsat NPN double transistor
NOTES
2001 Nov 07
11
PBSS2515VS
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected]
SCA73
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/02/pp12
Date of release: 2001
Nov 07
Document order number:
9397 750 09043