Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR6045WT series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA VR = 40 V/ 45 V a2 3 a1 1 IF(AV) = 60 A VF ≤ 0.58 V k 2 GENERAL DESCRIPTION PINNING Dual, common cathode schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR6045WT series is supplied in the conventional leaded SOT429 (TO247) package. PIN SOT429 (TO247) DESCRIPTION 1 anode 1 (a) 2 cathode (k) 3 anode 2 (a) tab cathode 2 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. PBYR60 VRRM VRWM VR IO(AV) IFRM IFSM IRRM Tj Tstg Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward currentper diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature MAX. UNIT - 40WT 40 45WT 45 V - 40 45 V Tmb ≤ 109 ˚C - 40 45 V square wave; δ = 0.5; Tmb ≤ 105 ˚C - 60 A square wave; δ = 0.5; Tmb ≤ 105 ˚C - 60 A t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 400 435 A A - 2 A - 150 ˚C - 65 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb per diode both diodes in free air Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient December 1998 MIN. - 1 TYP. MAX. UNIT 45 1 0.75 - K/W K/W K/W Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR6045WT series ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS VF Forward voltage per diode IR Reverse current per diode Cd Junction capacitance IF = 30 A; Tj = 125˚C IF = 60 A; Tj = 125˚C IF = 30 A IF = 60 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C December 1998 MIN. 2 - TYP. MAX. UNIT 0.51 0.7 0.54 0.69 0.3 30 1000 0.58 0.75 0.61 0.76 5 90 - V V V V mA mA pF Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR6045WT series Forward dissipation, PF (W) Tmb(max) (C) 30 Reverse Current, IR (mA) 1000 120 PBYR6045WT PBYR6045WT 25 0.5 125 D = 1.0 0.2 20 100 Tj =125C 130 0.1 10 Tj =100C 135 15 Tj =50C 145 5 Tj =75C 1 140 D = tp/T tp 10 0.1 T Tj =25C 150 0 0 10 20 30 40 Average forward current, IF(AV) (A) 0.01 50 0 Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. Forward dissipation, PF (W) 1.9 20 2.2 4 50 Cd / pF PBYR6045WT 130 a = 1.57 2.8 40 10000 125 PBYR6045WT 20 30 Reverse Voltage, VR (V) Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj Tmb(max) (C) 25 10 15 135 10 140 5 145 1000 150 0 0 5 10 15 20 25 Average forward current, IF(AV) (A) 100 30 1 Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Forward Current, IF (A) 60 55 50 45 40 35 30 25 20 15 10 5 0 10 VR / V 100 Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. PBYR6045WT Tj =125 C Tj = 25 C 10 typ Transient Thermal Impedance, Zth j-mb (K/W) PBYR6045WT max 1 Single pulse 0.1 PD tp 0.01 t 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.001 1E-06 1 Forward Voltage, VF (V) Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj December 1998 1E-05 1E-04 1E-03 1E-02 1E-01 pulse width, tp (s) 1E+00 1E+01 Fig.6. Transient thermal impedance per diode; Zth j-mb = f(tp). 3 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR6045WT series MECHANICAL DATA Dimensions in mm 5.3 max 16 max 1.8 Net Mass: 5 g 5.3 o 3.5 max 7.3 3.5 21 max 15.5 max seating plane 2.5 15.5 min 4.0 max 1 2 3 0.9 max 2.2 max 1.1 3.2 max 5.45 0.4 M 5.45 Fig.7. SOT429 (TO247); pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". December 1998 4 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR6045WT series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1998 5 Rev 1.000