PHILIPS BUK221-50DY

BUK221-50DY
Dual channel high-side TOPFET™
Rev. 01 — 16 April 2003
Product data
1. Product profile
1.1 Description
Monolithic temperature and overload protected dual high-side power switch based on
TOPFET™ Trench technology in a 7-pin surface mount plastic package.
Product availability:
BUK221-50DY in SOT427 (D2-PAK).
1.2 Features
■
■
■
■
■
■
■
■
Very low quiescent current
Power TrenchMOS™
Overtemperature protection
Over and undervoltage protection
Reverse battery protection
Low charge pump noise
Loss of ground protection
Negative load clamping
■
■
■
■
■
■
■
■
CMOS logic compatibility
Current limitation
Latched overload protection
ESD protection for all pins
Diagnostic status indication
Off-state open load detection
Load dump protection
Internal ground resistor.
1.3 Applications
■ 12 and 24 V grounded loads
■ Inductive loads
■ High inrush current loads
■ Replacement for relays and fuses.
1.4 Quick reference data
Table 1:
Quick reference data
Symbol
Parameter
Min
Max
Units
RBLon
battery-load on-state resistance
-
90
mΩ
IL
load current
-
4
A
IL(nom)
nominal load current (ISO)
3.6
-
A
IL(lim)
self-limiting load current
8
16
A
VBG(oper)
battery-ground operating voltage
5.5
35
V
BUK221-50DY
Philips Semiconductors
Dual channel high-side TOPFET™
2. Pinning information
B
S
mb
I1
L1
P
I2
1 2 3 4 5 6 7
L2
Front view
G
MBK128
No connection can be made to pin 4
(cropped).
03pa68
P represents protection circuitry.
Fig 1. Pinning; SOT427 (D2-PAK).
Fig 2. Symbol; (Dual High-Side Switch)
TOPFETTM.
2.1 Pin description
Table 2:
Pin description
Symbol
Pin
I/O
Description
L1
1
O
load 1
G
2
-
circuit common ground
I1
3
I
battery
B
4
-
S
5
O
status
I2
6
I
input 2
L2
7
O
[1]
[2]
mb
-
load 2
[2]
mounting base
Pin 4 is cropped and cannot be connected to the PCB by surface mounting.
The battery is connected to the mounting base.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 11167
Product data
input 1
[1] [2]
Rev. 01 — 16 April 2003
2 of 16
BUK221-50DY
Philips Semiconductors
Dual channel high-side TOPFET™
3. Block diagram
BUK221-50DY
4/mb
B
CHANNEL1
VOLTAGE
REGULATOR
POWER
MOSFET1
CHARGE PUMP
CURRENT LIMIT
3
I1
CONTROL
LOGIC1
1
OPEN CIRCUIT
SENSOR
L1
OVERVOLTAGE
PROTECTION
UNDERVOLTAGE
PROTECTION
SHORT CIRCUIT
PROTECTION
TEMPERATURE
SENSOR
5
STATUS DIAGNOSIS
S
CHANNEL2
VOLTAGE
REGULATOR
POWER
MOSFET2
CHARGE PUMP
CURRENT LIMIT
I2
6
CONTROL
LOGIC2
7
OPEN CIRCUIT
SENSOR
L2
OVERVOLTAGE
PROTECTION
UNDERVOLTAGE
PROTECTION
RLG1
SHORT CIRCUIT
PROTECTION
RLG2
TEMPERATURE
SENSOR
RG
G
2
03pa69
Fig 3. Elements of the dual high-side TOPFET switch.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 11167
Product data
Rev. 01 — 16 April 2003
3 of 16
BUK221-50DY
Philips Semiconductors
Dual channel high-side TOPFET™
4. Functional description
A diagnostic status ensures faster fault detection.
Active current limit is combined with latched short circuit protection in order to
protect the device in the event of a short circuit.
Thermal shutdown for high temperature conditions has an automatic restart at a
lower temperature so providing protection against excessive power dissipation.
Active clamping protects the device against low energy spikes.
Undervoltage lockout means the device shuts down for low battery voltages, thus
avoiding faulty operation.
Overvoltage shutdown in the on-state protects a load such as a lamp filament from
potentially destructive voltage spikes.
Table 3:
Truth table
Abbreviations: L = logic LOW; H = logic HIGH; X = don’t care; 0 = condition not present; 1 = condition present;
UV = undervoltage; OV = overvoltage; OC = open circuit load; SC = short circuit; OT = overtemperature [1].
Input
[1]
Supply
1
2
UV
OV
L
L
0
L
L
0
L
H
H
Load 1
Load 2
OT
OC
SC
Load output
OT
1
Status Operating mode
OC
SC
2
X
0
X
X
0
X
X
OFF
OFF
H
both off & normal
X
1
X
X
X
X
X
OFF
OFF
L
both off, one/both OC or
shorted to VS or battery;
Figure 10
0
X
1
X
X
0
0
0
OFF
ON
L
one off & OC, with other on
& normal
L
0
0
0
0
0
0
0
0
ON
OFF
H
one on & normal, with other
off & normal
H
H
0
0
0
0
0
0
0
0
ON
ON
H
both on & normal
H
X
1
0
X
X
X
0
X
X
OFF
OFF
H
supply undervoltage lockout
H
X
0
1
X
0
0
X
0
0
OFF
OFF
H
supply overvoltage
shutdown
H
X
0
0
0
1
X
X
X
X
OFF
X
L
one SC tripped
H
L
0
0
0
1
X
0
0
X
OFF
OFF
L
one SC tripped, with other
off & normal
H
H
0
0
0
1
X
0
0
0
OFF
ON
L
one SC tripped, with other
on & normal
H
X
0
0
0
0
1
X
X
X
OFF
X
L
one OT shutdown
H
L
0
0
0
0
1
0
0
X
OFF
OFF
L
one OT shutdown, with other
off & normal
H
H
0
0
0
0
1
0
0
0
OFF
ON
L
one OT shutdown, with other
on & normal
The status will continue to indicate OT (even if the input goes LOW) until the device cools below the reset threshold temperature.
See “Overtemperature protection” characteristics in Table 6 “Static characteristics”.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 11167
Product data
Rev. 01 — 16 April 2003
4 of 16
BUK221-50DY
Philips Semiconductors
Dual channel high-side TOPFET™
5. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
[1]
VBG
battery-ground supply voltage
IL
load current
Tmb ≤ 130 °C
Tmb ≤ 25 °C
Min
Max
Unit
-
45
V
-
4
A
Ptot
total power dissipation
-
44.6
W
Tstg
storage temperature
−55
+175
°C
Tj
junction temperature
−40
+150
°C
Tmb
mounting base temperature
-
260
°C
-
16
V
-
32
V
−5
+5
mA
−50
+50
mA
during soldering (≤ 10 s)
Reverse battery voltage
VBGR
reverse battery-ground supply voltage
VBGRR
repetitive reverse battery-ground
supply voltage
RI ≥ 3.3 kΩ; RSS ≥ 3.3 kΩ; Figure 10
[2]
Input current
II
input current
IIRM
repetitive peak input current
δ ≤ 0.1; tp = 300 µs
Status current
IS
status current
ISRM
repetitive peak status current
−5
+5
mA
δ ≤ 0.1; tp = 300 µs
−50
+50
mA
Tj = 150 °C prior to turn-off; VBG = 13 V;
IL = 5 A; (one channel) Figure 13
-
60
mJ
Human Body Model 1; C = 100 pF;
R = 1.5 kΩ
-
2
kV
Inductive load clamping
non-repetitive battery-load clamping
energy
EBL(CL)S
Electrostatic discharge voltage
Vesd
[1]
[2]
electrostatic discharge voltage
The device will not be harmed by exposure to the maximum supply voltage, but normal operation is not possible because of overvoltage
shutdown - see Table 6 “Static characteristics” for the operating range.
Reverse battery voltage is only allowed with external resistors to limit the input and status currents to a safe value. The connected load
must limit the reverse load current. The internal ground resistor limits the reverse battery ground current. See Figure 10 “Typical
dynamic response circuit diagram including reverse supply protection and open load detection.”
6. Thermal characteristics
Table 5:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from junction to
mounting base
per channel
-
4
5.6
K/W
both channels
-
2
2.8
K/W
thermal resistance from junction to
ambient
mounted on printed circuit board;
minimum footprint
-
50
-
K/W
Rth(j-a)
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 11167
Product data
Rev. 01 — 16 April 2003
5 of 16
BUK221-50DY
Philips Semiconductors
Dual channel high-side TOPFET™
7. Static characteristics
Table 6:
Static characteristics
Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IG = 1 mA
45
55
65
V
50
55
65
V
−18
−23
−28
V
−20
−25
−30
V
5.5
-
35
V
Tmb = 150 °C
-
-
20
µA
Tmb = 25 °C
-
0.1
1
µA
Tmb = 150 °C
-
-
10
µA
Tmb = 25 °C
-
0.1
1
µA
one channel on; Figure 5
-
2
3
mA
both channels on
-
4
6
mA
3.6
-
-
A
Tmb = 25 °C
-
73
90
mΩ
Tmb = 150 °C
-
146
180
mΩ
Clamping voltage
VBG(CL)
battery-ground clamping voltage
VBL(CL)
battery-load clamping voltage
IL = IG = 1 mA
VLG(CL)
load-ground clamping voltage
IL = 10 mA; Figure 13
[1]
IL = 4 A; tp = 300 µs
Supply voltage
VBG(oper)
battery-ground operating voltage
Current [2]
IB
battery quiescent current
off-state load current
IL(off)
operating current
IG(on)
IL(nom)
VLG = VIG = 0 V; Figure 9
[3]
VBL = VBG; per channel
nominal load current (ISO)
VBL = 0.5 V; Tmb = 85 °C
[4]
battery-load on-state resistance
9 ≤ VBG ≤ 35 V; IL = 4 A; Figure 4
[5]
Resistance
RBLon
VBG = 5.5 V; IL = 4 A
ground resistor
RG
Input
Tmb = 25 °C
-
76
120
mΩ
Tmb = 150 °C
-
150
240
mΩ
40
75
100
Ω
IG = −200 mA; tp = 300 µs
[6]
[7]
II
input current
VIG = 5 V
20
60
160
µA
VIG(CL)
input-ground clamping voltage
II = 200 µA
5.5
7
8.5
V
VIG(on)
input-ground turn-on voltage
Figure 8
-
2.1
3
V
VIG(off)
input-ground turn-off voltage
1.2
1.8
-
V
VIG(on)(hys)
input-ground turn-on hysteresis
0.15
0.3
0.5
V
II(on)
input turn-on current
VIG = 3 V
-
-
100
µA
II(off)
input turn-off current
VIG = 1.2 V
12
-
-
µA
Open current detection
[8][9]
VLG(oc)
load-ground open circuit voltage
VBG ≥ 9 V
1.5
2.5
3.5
V
IG(oc)
open-circuit operating current
VBG = VLG = 16 V
-
0.8
1.5
mA
open load detected; other
channel is off
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 11167
Product data
Rev. 01 — 16 April 2003
6 of 16
BUK221-50DY
Philips Semiconductors
Dual channel high-side TOPFET™
Table 6:
Static characteristics…continued
Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IL(oc)
load open circuit current
VLG = 3.5 V; per channel
-
−22
−40
µA
VLG = 16 V; per channel
-
−200
−300
µA
VS = 5 V; connected externally;
per channel; Figure 10
-
10
-
kΩ
2
4.2
5.3
V
-
0.5
1.5
V
35
40
45
V
0.2
1
2
V
VBG = 45 V; per channel
-
1
2.5
mA
VBG ≥ 8 V; VBL = VBG; Figure 7
8
12
16
A
150
170
190
°C
3
10
20
°C
5.5
7
8.5
V
RL(oc)
open circuit load resistor
Undervoltage [9]
VBG(uv)
[11]
battery-ground undervoltage
VBG(uv)(hys) battery-ground undervoltage
hysteresis
Overvoltage [9]
VBG(ov)
[12]
battery-ground overvoltage
VBG(ov)(hys) battery-ground overvoltage hysteresis
IG(ov)
overvoltage operating current
Overload protection
IL(lim)
self-limiting load current
Overtemperature protection
[9][10]
Tj(th)
threshold junction temperature
Tj(th)(hys)
threshold junction temperature
hysteresis
[13]
Status [9]
VSG(CL)
status-ground clamping voltage
VSG(L)
status-ground low voltage
IS(off)
status leakage current
IS = 100 µA
IS = 100 µA; Figure 6
-
0.7
0.9
V
IS = 250 µA
-
-
1.1
V
-
-
10
µA
-
0.1
1
µA
-
47
-
kΩ
VSG = 5 V
Tmb = 150 °C
Tmb = 25 °C
status resistor
RS
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
VSG = 5 V; connected externally;
Figure 10
[14]
For a high-side switch, the load pin voltage goes negative with respect to the ground during the turn-off of an inductive load. This
negative voltage is clamped by the device.
9 V ≤ VBG ≤ 35 V
This is the current drawn from the supply when both inputs are LOW, and includes leakage current to the loads.
Defined as in ISO10483-1. For comparison purposes only.
This only applies to the RBLon per channel. The supply and input voltages for the RBLon tests are continuous. The specified pulse
duration is tp = 300 µs, and refers only to the applied load current.
RG is a resistor incorporated internally into the package.
5.5 V ≤ VBG ≤ 35 V
An open circuit load can be detected in the off-state and requires an external pull-up resistor, RL(oc).
See Table 3 “Truth table”
Overtemperature protection is not active during reverse current operation.
Undervoltage sensor causes each output channel to switch off and reset.
Overvoltage sensor causes each output channel to switch off to protect the load.
After cooling below the reset temperature the channel will resume normal operation.
The status output is an open drain transistor and requires an external pull-up resistor, RS, to indicate a logic HIGH.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 11167
Product data
Rev. 01 — 16 April 2003
7 of 16
BUK221-50DY
Philips Semiconductors
Dual channel high-side TOPFET™
03pa96
200
RBLon
(mΩ)
160
Tj = 150°C
120
Tj = 25°C
80
Tj = -40°C
40
0
0
10
20
30
VBG (V)
40
IL = 4 A; VIG = 5 V
Fig 4. Battery-load on-state resistance as a function of battery-ground voltage; typical values.
03pa95
4
IG
(mA)
3
overvoltage
shutdown
undervoltage
shutdown
clamping
Tj = -40°C
Tj = 25°C
2
Tj = 150°C
1
0
0
25
50
75
VBG (V)
VIG = 5 V
Fig 5. Supply current characteristics: operating current as a function of battery-ground voltage for one channel
only; typical values.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 11167
Product data
Rev. 01 — 16 April 2003
8 of 16
BUK221-50DY
Philips Semiconductors
Dual channel high-side TOPFET™
03pa94
5
03pa93
16
IS
(mA)
4
IL(lim)
(A)
12
3
8
2
4
1
0
0
0
1
2
3
0
VSG (V)
8
12
16
VBL (V)
VBG = 13 V; VIG = 5 V; Tj = 25 °C
VBG = 16 V; VIG = 5 V; Tmb = 25 °C
Fig 6. Status current as a function of status-ground
voltage; typical values.
03pa98
3.5
4
Fig 7. Self-limiting load current as a function of
battery-load voltage; typical values.
03pa97
6
VIG(th)
IB
(µ A)
(V)
3
max
4
2.5
2
VIG(ON)
2
VIG(OFF)
1.5
min
0
1
-50
0
50
100
150
200
Tj (°C)
5.5 V ≤ VBG ≤ 35 V
-50
50
100
150
200
Tj (°C)
VBG = 35 V
Fig 8. Input-ground threshold voltage as a function of
junction temperature.
Fig 9. Battery quiescent current as a function of
junction temperature; typical values.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 11167
Product data
0
Rev. 01 — 16 April 2003
9 of 16
BUK221-50DY
Philips Semiconductors
Dual channel high-side TOPFET™
8. Dynamic characteristics
Table 7:
Switching characteristics
Tmb = 25 °C; VBG = 13 V; resistive load RL = 13 Ω per channel; Figure 12.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
30
-
µs
Turn-on measured from the input going HIGH
td(on)
turn-on delay time
to 10 % VL
-
dV/dton
rising slew rate
30 to 70 % VL
0.5
1
2
V/µs
ton
turn-on switching time
to 90 % VL
-
60
220
µs
to 90 % VL
-
20
-
µs
Turn-off measured from the input going LOW
td(off)
turn-off delay time
dV/dtoff
falling slew rate
70 to 30 % VL
0.5
1
2
V/µs
toff
turn-off switching time
to 10 % VL
-
40
200
µs
Table 8:
Capacitances
Tmb = 25 °C; f = 1 MHz; VIG = 0 V.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Csg
status-ground capacitance
VSG = 5 V
-
11
15
pF
Per channel
Cig
input-ground capacitance
VBG = 13 V
-
15
20
pF
Cbl
battery-load capacitance
VBL = 13 V
-
130
180
pF
Table 9:
Short circuit load protection characteristics
Tmb ≤ 125 °C prior to the overload short circuit condition.
Symbol
Parameter
PBL(OV)(th)
battery-load overload power threshold
tBL(d)(sc)
[1]
[2]
Conditions
5.5 ≤ VBG ≤ 35 V; device trips if
P
BL > PBL(OV)(th); Figure 11
battery-load short-circuit characteristic
time
Min
Typ
Max
Unit
[1]
10
55
100
W
[2]
200
350
800
µs
Short circuit protection is latched, but at high temperatures where Tj > Tj(th) overtemperature protection may occur first. Normal
operation may only be resumed following a short circuit after the input is toggled LOW then HIGH again.
Short circuit response time td(sc) varies with battery-load power PBL according to the logarithmic model equation:
t BL(d)(sc)
t d(sc) ≈ ------------------------------------P BL
ln  --------------------------
P BL(OV)(th)
Table 10: Status response times
Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
65
100
µs
Measured from when the input goes LOW to when the status goes LOW
td(oc)
open-circuit response time
Figure 10 and 14
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 11167
Product data
Rev. 01 — 16 April 2003
10 of 16
BUK221-50DY
Philips Semiconductors
Dual channel high-side TOPFET™
IB
RS
RSS
IS
RI
VBG
RL(oc)
VSG
VS
IL
P
II
VL
VIG
RL
IG
03pa90
RI ≥ 3.3 kΩ; RS = 47 kΩ; RSS ≥ 3.3 kΩ and RL(oc) = 10 kΩ.
Fig 10. Typical dynamic response circuit diagram including reverse supply protection and open load detection.
ton
td(sc)
toff
90%
VL
IL
dV/dton
dV/dtoff
10%
0V
0A
5V
5V
VSG
VSG
0.7 V
0V
0V
5V
5V
VIG
VIG
0
0
03pb03
03pa51
VBG = 13 V; VIG = 5 V and Tj = 25 °C
Fig 11. Short circuit protection waveforms.
Fig 12. Resistive switching waveforms and definitions.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 11167
Product data
Rev. 01 — 16 April 2003
11 of 16
BUK221-50DY
Philips Semiconductors
Dual channel high-side TOPFET™
VL
0V
ton
EBL(CL)S
toff
90%
IL
VL
0A
0V
5V
5V
VSG
10%
td(oc)
VSG
0.7 V
0V
0V
5V
5V
VIG
VIG
0
0
03pa99
03pb00
Fig 13. Switching a large inductive load.
Fig 14. Open circuit detect waveforms.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 11167
Product data
Rev. 01 — 16 April 2003
12 of 16
BUK221-50DY
Philips Semiconductors
Dual channel high-side TOPFET™
9. Package outline
Plastic single-ended surface mounted package (Philips version of D2-PAK);
7 leads (one lead cropped)
SOT427
A
A1
E
D1
mounting
base
D
HD
4
1
Lp
7
b
e
e
e
e
e
c
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
c
D
max.
D1
E
e
Lp
HD
Q
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
11
1.60
1.20
10.30
9.70
1.27
2.90
2.10
15.80
14.80
2.60
2.20
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
99-06-25
01-04-18
SOT427
Epoxy meets UL94 V0 at 1/8’’. Net mass: 1.5g. For soldering guidelines and surface mount footprint design, please refer to
Data Handbook SC18.
Fig 15. SOT427 (D2-PAK).
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 11167
Product data
Rev. 01 — 16 April 2003
13 of 16
BUK221-50DY
Philips Semiconductors
Dual channel high-side TOPFET™
10. Revision history
Table 11:
Revision history
Rev Date
01
20030416
CPCN
Description
-
Product data (9397 750 11167)
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 11167
Product data
Rev. 01 — 16 April 2003
14 of 16
BUK221-50DY
Philips Semiconductors
Dual channel high-side TOPFET™
11. Data sheet status
Level
Data sheet status[1]
Product status[2][3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Trademarks
13. Disclaimers
TOPFET — is a trademark of Koninklijke Philips Electronics N.V.
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [email protected]
Product data
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9397 750 11167
Rev. 01 — 16 April 2003
15 of 16
Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFET™
Contents
1
1.1
1.2
1.3
1.4
2
2.1
3
4
5
6
7
8
9
10
11
12
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Functional description . . . . . . . . . . . . . . . . . . . 4
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Static characteristics. . . . . . . . . . . . . . . . . . . . . 6
Dynamic characteristics . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
© Koninklijke Philips Electronics N.V. 2003.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 16 April 2003
Document order number: 9397 750 11167