DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1820-90 UHF power LDMOS transistor Product specification Supersedes data of 2001 Mar 07 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1820-90 PINNING FEATURES • Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA: PIN – Output power = 90 W (PEP) – Gain = 12 dB DESCRIPTION 1 drain 2 gate 3 source, connected to flange – Efficiency = 32% – dim = −26 dBc • Easy power control • Excellent ruggedness • High power gain handbook, halfpage 1 • Excellent thermal stability • Designed for broadband operation (1800 to 2000 MHz) • Internally matched for ease of use. 3 2 Top view APPLICATIONS • RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier applications in the 1800 to 2000 MHz frequency range. MBK394 Fig.1 Simplified outline SOT502A. DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 1800 to 2000 MHz. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION 2-tone, class-AB f (MHz) f1 = 2000; f2 = 2000.1 VDS (V) PL (W) Gp (dB) ηD (%) dim (dBc) 26 90 (PEP) >11 >30 ≤−25 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER MIN. MAX. UNIT VDS drain-source voltage − 65 V VGS gate-source voltage − ±15 V ID DC drain current − 12 A Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2003 Feb 10 2 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1820-90 THERMAL CHARACTERISTICS SYMBOL Rth j-h PARAMETER CONDITIONS VALUE UNIT 0.81 K/W thermal resistance from junction to heatsink Th = 25 °C; note 1 Note 1. Determined under specified RF operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 2.1 mA 65 − − V VGSth gate-source threshold voltage VDS = 10 V; ID = 210 mA 4.4 − 5.5 V IDSS drain-source leakage current VGS = 0; VDS = 26 V − − 15 µA IDSX on-state drain current VGS =VGSth + 9 V; VDS = 10 V 27 − − A IGSS gate leakage current VGS = ±15 V; VDS = 0 − − 38 nA gfs forward transconductance VDS = 10 V; ID = 7.5 A − 6.2 − S RDSon drain-source on-state resistance VGS = VGSth + 9 V; ID = 7.5 A − 0.1 − Ω Crss feedback capacitance VGS = 0; VDS = 26 V; f = 1 MHz; note 1 − 5.1 − pF Note 1. The value of capacitance is that of the die only. 2003 Feb 10 3 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1820-90 APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 °C; Rth j-h = 0.81 K/W; unless otherwise specified. f (MHz) MODE OF OPERATION f1 = 2000; f2 = 2000.1 Two-tone, class-AB VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) dim (dBc) 26 750 90 (PEP) >11 >30 ≤−25 Ruggedness in class-AB operation The BLF1820-90 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; IDQ = 750 mA; PL = 90 W; f = 2000 MHz (single tone). MLD556 15 Gp handbook, halfpage (dB) ηD Gp 50 ηD MLD557 0 handbook, halfpage dim (dBc) (%) 40 −20 d3 30 d5 −40 10 20 d7 −60 10 5 0 40 80 −80 0 120 PL (W) (PEP) 0 40 VDS = 26 V; IDQ = 750 mA; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz. VDS = 26 V; IDQ = 750 mA; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz. Fig.2 Fig.3 Power gain and drain efficiency as functions of peak envelope load power; typical values. 2003 Feb 10 4 80 120 PL (PEP) (W) Intermodulation distortion products as functions of peak envelope load power; typical values. Philips Semiconductors Product specification UHF power LDMOS transistor MLD558 15 Gp BLF1820-90 handbook, halfpage 50 ηD (dB) (%) (2) d3 (dBc) 40 (3) MLD559 0 handbook, halfpage −20 (2) (1) (3) 30 (1) (1) (2) −40 10 (3) 20 −60 10 5 0 40 80 PL (W) −80 0 120 (1) IDQ = 600 mA. (2) IDQ = 750 mA. 80 120 PL (PEP) (W) (2) IDQ = 750 mA. (3) IDQ = 900 mA. (3) IDQ = 900 mA. Fig.5 Fig.4 40 VDS = 26 V; IDQ = 750 mA; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz. VDS = 26 V; IDQ = 750 mA; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz. (1) IDQ = 600 mA. 0 Power gain and drain efficiency as functions of average load power; typical values. MLD560 6 Intermodulation distortion products as functions of peak envelope load power; typical values. MLD561 4 handbook, halfpage handbook, halfpage ZL (Ω) Zi (Ω) 2 4 RL ri 0 2 xi −2 0 XL −2 1.6 1.8 2 f (GHz) −4 1.6 2.2 1.8 2 f (GHz) VDS = 26 V; IDQ = 750 mA; PL = 90 W; Th ≤ 25 °C. VDS = 26 V; IDQ = 750 mA; PL = 90 W; Th ≤ 25 °C. Fig.6 Fig.7 Input impedance as a function of frequency (series components); typical values. 2003 Feb 10 5 2.2 Load impedance as a function of frequency (series components); typical values. Philips Semiconductors Product specification UHF power LDMOS transistor BLF1820-90 F1 handbook, full pagewidth C6 R1 C15 C13 R2 VDS VGS C5 C11 C12 C16 C17 L13 L4 C4 C14 C10 L10 L6 L11 L2 L15 L17 L8 input 50 Ω C3 L20 C9 L1 L3 C2 L5 L7 L12 L9 L14 L16 C7 C1 L18 L19 output 50 Ω C8 MGT005 Fig.8 2 GHz class-AB test circuit. 2003 Feb 10 6 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1820-90 List of components See Figs 8 and 9. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2, C7, C8 Tekelec variable capacitor; type 37271 0.6 to 4.5 pF C3, C9 multilayer ceramic chip capacitor; note 1 12 pF C4, C10 multilayer ceramic chip capacitor; note 2 12 pF C5, C12, C16 electrolytic capacitor 4.5 µF; 50 V C6, C11, C15 multilayer ceramic chip capacitor; note 1 1 nF C13, C17 electrolytic capacitor 100 µF; 63 V 2222 037 58101 C14 multilayer ceramic chip capacitor 100 nF 2222 581 16641 F1 Ferroxcube chip-bead 8DS3/3/8/9-4S2 L1 stripline; note 3 4330 030 36301 50 Ω 2.9 × 2.4 mm L2 10.8 Ω 4 × 16.3 mm L3 50 Ω 3.7 × 2.4 mm L4 6Ω 2 × 30.8 mm L5 50 Ω 3.6 × 2.4 mm L6 9Ω 3 × 19.9 mm L7 50 Ω 7.8 × 2.4 mm L8 18.5 Ω 4 × 8.8 mm L9 24.4 Ω 5 × 6.3 mm L10 5.1 Ω 7 × 37 mm L11 5.1 Ω 7 × 40.9 mm L12 25.4 Ω 10.1 × 6 mm L13 5.7 Ω 2.4 × 32.8 mm L14 25.4 Ω 6.4 × 6 mm L15 10 Ω 3.5 × 20.7 mm L16 50 Ω 10.8 × 2.4 mm L17 11.8 Ω 3 × 7.9 mm L18 50 Ω 2.3 × 2.4 mm L19 50 Ω 3 × 2.4 mm L20 50 Ω 5.5 × 2.4 mm R1, R2 10 Ω, 0.6 W metal film resistor 2322 156 11009 Notes 1. American Technical Ceramics type 100B or capacitor of same quality. 2. American Technical Ceramics type 100A or capacitor of same quality. 3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (εr = 2.2); thickness 0.79 mm. 2003 Feb 10 7 Philips Semiconductors Product specification UHF power LDMOS transistor handbook, full pagewidth BLF1820-90 50 50 95 INPUT OUTPUT PH990118 VDS VGS C6 R2 C17 C16 C5 R1 F1 C13 C11 C10 C4 C15 C14 C12 C9 C3 C2 C1 C7 C8 INPUT OUTPUT PH990118 MGU327 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr = 2.2), thickness 0.79 mm. The other side is unetched and serves as a ground plane. Fig.9 Component layout for 2 GHz class-AB test circuit. 2003 Feb 10 8 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1820-90 PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION D E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D1 0.045 0.785 0.035 0.745 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A 2003 Feb 10 0.210 0.133 0.170 0.123 9 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1820-90 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Feb 10 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1820-90 NOTES 2003 Feb 10 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/02/pp12 Date of release: 2003 Feb 10 Document order number: 9397 750 10916