INTEGRATED CIRCUITS DATA SHEET TDA8511J 4 × 13 W single-ended power amplifiers Preliminary specification Supersedes data of 1999 Jun 14 File under Integrated Circuits, IC01 2000 Mar 10 Philips Semiconductors Preliminary specification 4 × 13 W single-ended power amplifiers TDA8511J FEATURES APPLICATIONS • Requires very few external components The device is primarily developed for multi-media applications and active speaker systems. • High output power • Fixed gain GENERAL DESCRIPTION • Diagnostic facility (distortion, short-circuit and temperature detection) The TDA8511J is an integrated class-B output amplifier in a 17-lead DIL-bent-SIL power package. It contains 4 × 13 W single-ended amplifiers. • Good ripple rejection • Mode select switch (operating, mute and standby) • AC and DC short-circuit safe to ground and to VP • Low power dissipation in any short-circuit condition • Thermally protected • Reverse polarity safe • Electrostatic discharge protection • No switch-on/switch-off plop • Flexible leads • Low thermal resistance • Identical inputs. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VP supply voltage 6 15 18 V IORM repetitive peak output current − − 4 A Iq(tot) total quiescent current − 80 − mA Istb standby current − 0.1 100 µA Po output power RL = 4 Ω − 7 − W RL = 2 Ω − 13 − W SVRR supply voltage ripple rejection Vn(o) noise output voltage Zi input impedance THD = 10% Rs = 0 Ω 46 − − dB − 50 − µV 50 − − kΩ ORDERING INFORMATION PACKAGE TYPE NUMBER NAME TDA8511J DBS17P 2000 Mar 10 DESCRIPTION plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) 2 VERSION SOT243-1 Philips Semiconductors Preliminary specification 4 × 13 W single-ended power amplifiers TDA8511J BLOCK DIAGRAM V P1 handbook, full pagewidth 5 input 1 1 mute switch VP2 13 Cm 60 kΩ TDA8511J 6 VA output 1 2 kΩ 18 kΩ power stage mute switch Cm 60 kΩ input 2 3 8 VA output 2 2 kΩ 18 kΩ power stage VP stand-by switch PROTECTIONS thermal short-circuit 15 kΩ 16 diagnostic output mute switch x1 input 3 mode select switch stand-by reference voltage VA supply voltage ripple rejection 14 4 15 kΩ mute reference voltage Cm mute switch 15 60 kΩ 10 VA output 3 2 kΩ 18 kΩ power stage mute switch input 4 Cm 60 kΩ 17 12 VA 2 kΩ 2 ground (signal) input reference voltage 18 kΩ power stage 9 7 11 GND1 GND2 not connected power ground (substrate) Fig.1 Block diagram. 2000 Mar 10 3 MGL497 output 4 Philips Semiconductors Preliminary specification 4 × 13 W single-ended power amplifiers TDA8511J PINNING SYMBOL PIN DESCRIPTION IN1 1 input 1 SGND 2 signal ground IN2 3 input 2 RR 4 supply voltage ripple rejection IN2 3 VP1 5 supply voltage RR 4 OUT1 6 output 1 GND1 7 power ground 1 OUT2 8 output 2 n.c. 9 not connected OUT3 10 output 3 GND2 11 power ground 2 OUT4 12 output 4 OUT3 10 VP2 13 supply voltage GND2 11 MODE 14 mode select switch input IN3 15 input 3 VDIAG 16 diagnostic output IN4 17 input 4 handbook, halfpage IN1 1 SGND 2 VP1 5 OUT1 6 GND1 7 OUT2 8 n.c. 9 TDA8511J OUT4 12 VP2 13 MODE 14 IN3 15 VDIAG 16 IN4 17 MGL498 Fig.2 Pin configuration. FUNCTIONAL DESCRIPTION This can be achieved by: • Microprocessor control The TDA8511J contains four identical amplifiers and can be used for single-ended applications. The gain of each amplifier is fixed at 20 dB. Special features of the device are: • External timing circuit (see Fig.7). Diagnostic output (pin 16) • Mode select switch (pin 14) DYNAMIC DISTORTION DETECTOR (DDD) • Diagnostic output (pin 16). At the onset of clipping of one or more output stages, the dynamic distortion detector becomes active and pin 16 goes LOW. This information can be used to drive a sound processor or DC volume control to attenuate the input signal and thus limit the distortion. The output level of pin 16 is independent of the number of channels that are clipping (see Fig.3). Mode select switch (pin 14) • Low standby current (<100 µA) • Low switching current (low cost supply switch) • Mute facility. To avoid switch-on plops, it is advised to keep the amplifier in the mute mode during ≥100 ms (charging of the input capacitors at pin 1, 3, 15 and pin 17). 2000 Mar 10 4 Philips Semiconductors Preliminary specification 4 × 13 W single-ended power amplifiers TDA8511J SHORT-CIRCUIT PROTECTION When a short-circuit occurs at one or more outputs to ground or to the supply voltage, the output stages are switched off until the short-circuit is removed and the device is switched on again, with a delay of approximately 20 ms, after removal of the short-circuit. During this short-circuit condition, pin 16 is continuously LOW. handbook, halfpage VO MGA706 0 When a short-circuit across the load of one or more channels occurs the output stages are switched off during approximately 20 ms. After that time it is checked during approximately 50 µs to see whether the short-circuit is still present. Due to this duty cycle of 50 µs/20 ms the average current consumption during this short-circuit condition is very low (approximately 40 mA). V16 VP 0 t During this short-circuit condition, pin 16 is LOW for 20 ms and HIGH for 50 µs (see Fig.4). Fig.3 Distortion detector waveform. The power dissipation in any short-circuit condition is very low. TEMPERATURE DETECTION OPEN COLLECTOR OUTPUT When the virtual junction temperature Tvj reaches 150 °C, pin 16 will be active LOW. Pin 16 is an open collector output, which allows that more devices can be connected together (pins 16). handbook, full pagewidthcurrent MGL508 in output stage V16 t short-circuit over the load 20 ms VP t 50 µs Fig.4 Short-circuit waveform. 2000 Mar 10 5 Philips Semiconductors Preliminary specification 4 × 13 W single-ended power amplifiers TDA8511J LIMITING VALUES In accordance with the absolute maximum system (IEC 134). SYMBOL VP PARAMETER CONDITIONS supply voltage MIN. MAX. UNIT operating − 18 V no signal − 20 V IOSM non-repetitive peak output current − 6 A IORM repetitive peak output current − 4 A Vpsc AC and DC short-circuit safe voltage − 18 V Vpr reverse polarity − 6 V Ptot total power dissipation − 60 W Tstg storage temperature −55 +150 °C Tamb operating ambient temperature −40 +85 °C Tvj virtual junction temperature − 150 °C THERMAL CHARACTERISTICS In accordance with IEC 747-1. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient in free air 40 K/W Rth(j-c) thermal resistance from junction to case 1.3 K/W handbook, halfpage output 1 3.0 K/W see Fig.5 virtual junction output 3 output 2 3.0 K/W 3.0 K/W output 4 3.0 K/W 0.7 K/W 0.7 K/W MEA860 - 2 0.2 K/W case Fig.5 Equivalent thermal resistance network. 2000 Mar 10 6 Philips Semiconductors Preliminary specification 4 × 13 W single-ended power amplifiers TDA8511J DC CHARACTERISTICS VP = 15 V; Tamb = 25 °C; measured in Fig.6; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 18 V Supply VP supply voltage IP VO note 1 6 15 quiescent current − 80 160 mA DC output voltage − 6.9 − V switch-on voltage level 8.5 − − V Vmute mute voltage 3.3 − 6.4 V VO output voltage in mute position − − 2 mV Mode select switch Von MUTE CONDITION Vi(max) = 1 V; f = 1 kHz STANDBY CONDITION Vstb standby voltage 0 − 2 V Istb standby current − − 100 µA Isw(on) switch-on current − 12 40 µA − − 0.6 V Diagnostic output (pin 16) VDIAG diagnostic output voltage any short-circuit or clipping Note 1. The circuit is DC adjusted at VP = 6 to 18 V and AC operating at VP = 8.5 to 18 V. 2000 Mar 10 7 Philips Semiconductors Preliminary specification 4 × 13 W single-ended power amplifiers TDA8511J AC CHARACTERISTICS VP = 15 V; RL = 4 Ω; f = 1 kHz; Tamb = 25 °C; measured in Fig.6; unless otherwise specified. SYMBOL PO PARAMETER CONDITIONS output power MIN. TYP. MAX. UNIT note 1 THD = 0.5% 4 5.5 − W THD = 10% 5.5 7 − W − 0.06 − % THD = 0.5% − 10 − W THD total harmonic distortion PO = 1 W PO output power RL = 2 Ω; note 1 THD = 10% − 13 − W fl low frequency roll-off at −1 dB; note 2 − 25 − Hz fh high frequency roll-off at −1 dB 20 − − kHz Gv closed loop voltage gain 19 20 21 dB SVRR supply voltage ripple rejection on 48 − − dB mute 46 − − dB standby 80 − − dB 50 60 75 kΩ Zi input impedance Vn(o) noise output voltage note 3 on; Rs = 0 Ω; note 4 − 50 − µV on; Rs = 10 kΩ; note 4 − 70 100 µV − 50 − µV mute; notes 4 and 5 αCS channel separation ∆Gv channel unbalance Rs = 10 kΩ 40 60 − dB − − 1 dB − 10 − % Dynamic distortion detector THD V16 ≤ 0.6 V; no short-circuit total harmonic distortion Notes 1. Output power is measured directly at the output pins of the IC. 2. Frequency response externally fixed. 3. Ripple rejection measured at the output with a source-impedance of 0 Ω, maximum ripple amplitude of 2 V (p-p) and at a frequency between 100 Hz and 10 kHz. 4. Noise measured in a bandwidth of 20 Hz to 20 kHz. 5. Noise output voltage independent of Rs (Vi = 0 V). 2000 Mar 10 8 Philips Semiconductors Preliminary specification 4 × 13 W single-ended power amplifiers TDA8511J TEST/APPLICATION INFORMATION VP mode switch handbook, full pagewidth 100 nF 10 kΩ diagnostic 16 14 5 2200 µF 13 TDA8511J 220 nF input 1 1 6 1000 µF RL 60 kΩ 220 nF input 2 1000 µF 2 ground (signal) supply voltage ripple rejection 8 3 60 kΩ 4 100 µF RL reference voltage V p /2 9 60 kΩ 15 input 3 10 220 nF 1000 µF 60 kΩ 220 nF input 4 not connected RL 12 17 1000 µF RL 7 11 MGL499 power ground (substrate) Fig.6 Application diagram. 2000 Mar 10 9 Philips Semiconductors Preliminary specification 4 × 13 W single-ended power amplifiers Mode select switch To avoid switch-on plops, it is advised to keep the amplifier in the mute mode during >100 ms (charging of the input capacitors at pins 1, 3, 15 and 17. The circuit in Fig.7 slowly ramps up the voltage at the mode select switch pin when switching on and results in fast muting when switching off. handbook, halfpage VP 10 kΩ 47 µF 100 Ω mode select switch 100 kΩ MGA708 Fig.7 Mode select switch circuitry. 2000 Mar 10 10 TDA8511J Philips Semiconductors Preliminary specification 4 × 13 W single-ended power amplifiers TDA8511J PACKAGE OUTLINE DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1 non-concave Dh x D Eh view B: mounting base side d A2 B j E A L3 L Q c 1 v M 17 e1 Z bp e e2 m w M 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A2 bp c D (1) d Dh E (1) e mm 17.0 15.5 4.6 4.4 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 12.2 11.8 2.54 e1 e2 1.27 5.08 Eh j L L3 m Q v w x Z (1) 6 3.4 3.1 12.4 11.0 2.4 1.6 4.3 2.1 1.8 0.8 0.4 0.03 2.00 1.45 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-12-16 99-12-17 SOT243-1 2000 Mar 10 EUROPEAN PROJECTION 11 Philips Semiconductors Preliminary specification 4 × 13 W single-ended power amplifiers TDA8511J The total contact time of successive solder waves must not exceed 5 seconds. SOLDERING Introduction to soldering through-hole mount packages The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. This text gives a brief insight to wave, dip and manual soldering. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). Wave soldering is the preferred method for mounting of through-hole mount IC packages on a printed-circuit board. Manual soldering Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. Soldering by dipping or by solder wave The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joints for more than 5 seconds. Suitability of through-hole mount IC packages for dipping and wave soldering methods SOLDERING METHOD PACKAGE DIPPING DBS, DIP, HDIP, SDIP, SIL WAVE suitable(1) suitable Note 1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2000 Mar 10 12 Philips Semiconductors Preliminary specification 4 × 13 W single-ended power amplifiers NOTES 2000 Mar 10 13 TDA8511J Philips Semiconductors Preliminary specification 4 × 13 W single-ended power amplifiers NOTES 2000 Mar 10 14 TDA8511J Philips Semiconductors Preliminary specification 4 × 13 W single-ended power amplifiers NOTES 2000 Mar 10 15 TDA8511J Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW, Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 3341 299, Fax.+381 11 3342 553 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com SCA 69 © Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 753503/03/pp16 Date of release: 2000 Mar 10 Document order number: 9397 750 06921