PHILIPS NX3L2267S

NX3L2267S
Low-ohmic dual single-pole double-throw analog switch
Rev. 2 — 8 November 2011
Product data sheet
1. General description
The NX3L2267S is a dual low-ohmic single-pole double-throw analog switch suitable for
use as an analog or digital 2 : 1 multiplexer/demultiplexer. Each switch has a digital select
input (nS), two independent inputs/outputs (nY0 and nY1) and a common input/output
(nZ).
The NX3L2267S includes termination resistors that improve noise immunity during
overshoot excursions, off-isolation coupling, or pop-minimization.
Schmitt trigger action at the digital inputs makes the circuit tolerant to slower input rise and
fall times. Low threshold digital inputs allows this device to be driven by 1.8 V logic levels
in 3.3 V applications without significant increase in supply current ICC. This makes it
possible for the NX3L2267S to switch 4.3 V signals with a 1.8 V digital controller,
eliminating the need for logic level translation. The NX3L2267S allows signals with
amplitude up to VCC to be transmitted from nZ to nY0 or nY1, or from nY0 or nY1 to nZ. Its
low ON resistance (0.5 ) and flatness (0.13 ) ensures minimal attenuation and
distortion of transmitted signals.
2. Features and benefits
 Wide supply voltage range from 1.4 V to 4.3 V
 Very low ON resistance (peak):
 1.65  (typical) at VCC = 1.4 V
 0.95  (typical) at VCC = 1.65 V
 0.55  (typical) at VCC = 2.3 V
 0.50  (typical) at VCC = 2.7 V
0.50  (typical) at VCC = 4.3 V
 Break-before-make switching
 High noise immunity
 ESD protection:
 HBM JESD22-A114F Class 3A exceeds 7500 V
 MM JESD22-A115-A exceeds 200 V
 CDM AEC-Q100-011 revision B exceeds 1000 V
 CMOS low-power consumption
 Latch-up performance exceeds 100 mA per JESD78B Class II Level A
 1.8 V control logic at VCC = 3.6 V
 Control input accepts voltages above supply voltage
 Very low supply current, even when input is below VCC
 High current handling capability (350 mA continuous current under 3.3 V supply)
NX3L2267S
NXP Semiconductors
Low-ohmic dual single-pole double-throw analog switch
 Specified from 40 C to +85 C and from 40 C to +125 C
3. Applications
 Cell phone
 PDA
 Portable media player
4. Ordering information
Table 1.
Ordering information
Type number
Package
Temperature range
NX3L2267SGU 40 C to +125 C
Name
Description
Version
XQFN10
plastic, extremely thin quad flat package; no leads;
10 terminals; body 1.40  1.80  0.50 mm
SOT1160-1
5. Marking
Table 2.
Marking
Type number
Marking code
NX3L2267SGU
MS
6. Functional diagram
1Y0
2Y0
1S
2S
1Z
2Z
2Y1
1Y1
aaa-000295
Fig 1.
Logic symbol
NX3L2267S
Product data sheet
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Rev. 2 — 8 November 2011
© NXP B.V. 2011. All rights reserved.
2 of 20
NX3L2267S
NXP Semiconductors
Low-ohmic dual single-pole double-throw analog switch
7. Pinning information
7.1 Pinning
8 1Z
terminal 1
index area
9 VCC
10 1Y0
NX3L2267S
6 2S
2Z 5
2Y0 2
GND 4
7 1S
2Y1 3
1Y1 1
aaa-000296
Transparent top view
Fig 2.
Pin configuration SOT1160-1 (XQFN10)
7.2 Pin description
Table 3.
Pin description
Symbol
Pin
Description
1Y0
10
independent input or output
1Y1
1
independent input or output
2Y0
2
independent input or output
2Y1
3
independent input or output
GND
4
ground (0 V)
2Z
5
common output or input
2S
6
select input
1S
7
select input
1Z
8
common output or input
VCC
9
supply voltage
NX3L2267S
Product data sheet
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Rev. 2 — 8 November 2011
© NXP B.V. 2011. All rights reserved.
3 of 20
NX3L2267S
NXP Semiconductors
Low-ohmic dual single-pole double-throw analog switch
8. Functional description
Table 4.
Function table[1]
Input nS
Channel on
L
nY0 = nZ; nY1 terminated to GND
H
nY1 = nZ; nY0 terminated to GND
[1]
H = HIGH voltage level; L = LOW voltage level.
9. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
VCC
supply voltage
VI
input voltage
Conditions
Min
Max
Unit
0.5
+4.6
V
V
select input nS
[1]
0.5
+4.6
[2]
0.5
VCC + 0.5 V
VSW
switch voltage
nZ ON or OFF; nYn ON
nYn OFF
0
1.4
V
IIK
input clamping current
VI < 0.5 V
50
-
mA
ISK
switch clamping current
VI < 0.5 V or VI > VCC + 0.5 V
-
50
mA
ISW
switch current
VSW > 0.5 V or VSW < VCC + 0.5 V;
source or sink current
-
350
mA
VSW > 0.5 V or VSW < VCC + 0.5 V;
pulsed at 1 ms duration, < 10 % duty cycle;
peak current
-
500
mA
Tstg
storage temperature
Ptot
total power dissipation
Tamb = 40 C to +125 C
[3]
65
+150
C
-
250
mW
[1]
The minimum input voltage rating may be exceeded if the input current rating is observed.
[2]
The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed but may not
exceed 4.6 V.
[3]
For XQFN10 package: above 133 C the value of Ptot derates linearly with 11.5 mW/K.
10. Recommended operating conditions
Table 6.
Recommended operating conditions
Symbol Parameter
Conditions
Min
Max
1.4
4.3
V
0
4.3
V
0
VCC
V
40
+125
C
-
200
ns/V
VCC
supply voltage
VI
input voltage
select input nS
VSW
switch voltage
switch input nY0 or nY1
[1]
Tamb
ambient temperature
VCC = 1.4 V to 4.3 V
[2]
t/V
input transition rise and fall rate
Unit
[1]
To avoid sinking GND current from terminal nZ when switch current flows in terminal nYn, the voltage drop across the bidirectional
switch must not exceed 0.4 V. If the switch current flows into terminal nZ, no GND current will flow from terminal nYn. In this case, there
is no limit for the voltage drop across the switch.
[2]
Applies to select input nS signal levels.
NX3L2267S
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 8 November 2011
© NXP B.V. 2011. All rights reserved.
4 of 20
NX3L2267S
NXP Semiconductors
Low-ohmic dual single-pole double-throw analog switch
11. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Symbol Parameter
HIGH-level
input voltage
VIH
LOW-level
input voltage
VIL
Tamb = 25 C
Conditions
Unit
Min
Typ
Max
Min
VCC = 1.4 V to 1.6 V
0.9
-
-
0.9
-
-
V
VCC = 1.65 V to 1.95 V
0.9
-
-
0.9
-
-
V
VCC = 2.3 V to 2.7 V
1.1
-
-
1.1
-
-
V
VCC = 2.7 V to 3.6 V
1.3
-
-
1.3
-
-
V
VCC = 3.6 V to 4.3 V
1.4
-
-
1.4
-
-
V
VCC = 1.4 V to 1.6 V
-
-
0.3
-
0.3
0.3
V
VCC = 1.65 V to 1.95 V
-
-
0.4
-
0.4
0.3
V
Max
Max
(85 C) (125 C)
VCC = 2.3 V to 2.7 V
-
-
0.5
-
0.5
0.4
V
VCC = 2.7 V to 3.6 V
-
-
0.5
-
0.5
0.5
V
VCC = 3.6 V to 4.3 V
-
-
0.6
-
0.6
0.6
V
-
-
-
-
0.5
1
A
-
-
50
-
150
1500
nA
VCC = 3.6 V
-
-
100
-
300
3000
nA
VCC = 4.3 V
II
input leakage
current
select input nS;
VI = GND to 4.3 V;
VCC = 1.4 V to 4.3 V
IS(ON)
ON-state
leakage
current
nZ port; see Figure 3
ICC
Tamb = 40 C to +125 C
VCC = 1.4 V to 4.3 V
supply current VI = VCC or GND;
VSW = GND or VCC
ICC
-
-
150
-
500
5000
nA
additional
VSW = GND or VCC
supply current
VI = 2.6 V; VCC = 4.3 V
-
2.0
4.0
-
7
7
A
VI = 2.6 V; VCC = 3.6 V
-
0.35
0.7
-
1
1
A
VI = 1.8 V; VCC = 4.3 V
-
7.0
10.0
-
15
15
A
VI = 1.8 V; VCC = 3.6 V
-
2.5
4.0
-
5
5
A
-
50
200
-
300
500
nA
-
200
-
-
-
-

-
1.0
-
-
-
-
pF
VI = 1.8 V; VCC = 2.5 V
RT
termination
resistance
CI
input
capacitance
CS(OFF)
OFF-state
capacitance
port nYn
-
35
-
-
-
-
pF
CS(ON)
ON-state
capacitance
port nYn
-
135
-
-
-
-
pF
[1]
VSW = 1.0 V; VCC = 3.0 V
[1]
Guaranteed by characterization, not production tested.
NX3L2267S
Product data sheet
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Rev. 2 — 8 November 2011
© NXP B.V. 2011. All rights reserved.
5 of 20
NX3L2267S
NXP Semiconductors
Low-ohmic dual single-pole double-throw analog switch
11.1 Test circuits
VCC
VIL or VIH
IS
nS
nY0 1
nZ
nY1 2
switch
nS
1
VIH
2
VIL
switch
VI
VO
GND
012aaa001
VI = 0.3 V or VCC  0.3 V; VO = VCC  0.3 V or 0.3 V.
Fig 3.
Test circuit for measuring ON-state leakage current
11.2 ON resistance
Table 8.
ON resistance
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 5 to Figure 11.
Symbol
Parameter
40 C to +85 C
Conditions
Min
RON(peak)
ON resistance (peak)
Product data sheet
Min
Max
VCC = 1.4 V
-
1.65
3.7
-
4.1

VCC = 1.65 V
-
0.95
1.6
-
1.7

VCC = 2.3 V
-
0.55
0.8
-
0.9

VCC = 2.7 V
-
0.50
0.75
-
0.9

-
0.50
0.75
-
0.9

VCC = 1.4 V
-
0.20
0.35
-
0.35

VCC = 1.65 V
-
0.20
0.25
-
0.30

VCC = 2.3 V
-
0.09
0.13
-
0.15

VCC = 2.7 V
-
0.09
0.125
-
0.15

VCC = 4.3 V
-
0.09
0.125
-
0.15

ON resistance mismatch VI = GND to VCC;
between channels
ISW = 100 mA
NX3L2267S
Max
Unit
port nYn;
VI = GND to VCC;
ISW = 100 mA;
see Figure 4
VCC = 4.3 V
RON
40 C to +125 C
Typ[1]
[2]
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© NXP B.V. 2011. All rights reserved.
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NX3L2267S
NXP Semiconductors
Low-ohmic dual single-pole double-throw analog switch
Table 8.
ON resistance …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 5 to Figure 11.
Symbol
RON(flat)
Parameter
40 C to +85 C
Conditions
40 C to +125 C
Unit
Min
Typ[1]
Max
Min
Max
VCC = 1.4 V
-
1.05
3.35
-
3.65

VCC = 1.65 V
-
0.55
1.25
-
1.35

ON resistance (flatness) port nYn;
VI = GND to VCC;
ISW = 100 mA
[3]
VCC = 2.3 V
-
0.20
0.35
-
0.40

VCC = 2.7 V
-
0.18
0.35
-
0.40

VCC = 4.3 V
-
0.23
0.40
-
0.45

[1]
Typical values are measured at Tamb = 25 C.
[2]
Measured at identical VCC, temperature and input voltage.
[3]
Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical VCC and
temperature.
11.3 ON resistance test circuit and graphs
001aag564
1.6
RON
(Ω)
1.2
(1)
VSW
V
VCC
nS
VIL or VIH
nZ
nY0 1 switch
nY1 2
VI
0.8
switch
nS
1
VIL
2
VIH
(2)
(3)
(4)
0.4
(5)
(6)
ISW
0
GND
0
1
2
RON = VSW / ISW.
3
4
5
VI (V)
012aaa002
(1) VCC = 1.5 V.
(2) VCC = 1.8 V.
(3) VCC = 2.5 V.
(4) VCC = 2.7 V.
(5) VCC = 3.3 V.
(6) VCC = 4.3 V.
Measured at Tamb = 25 C.
Fig 4.
Test circuit for measuring ON resistance
NX3L2267S
Product data sheet
Fig 5.
Typical ON resistance as a function of input
voltage (nYn port)
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7 of 20
NX3L2267S
NXP Semiconductors
Low-ohmic dual single-pole double-throw analog switch
001aag565
1.6
001aag566
1.0
RON
(Ω)
RON
(Ω)
0.8
1.2
(1)
(2)
(3)
(4)
0.6
(1)
(2)
(3)
(4)
0.8
0.4
0.4
0.2
0
0
0
1
2
3
0
1
2
VI (V)
(1) Tamb = 125 C.
(1) Tamb = 125 C.
(2) Tamb = 85 C.
(2) Tamb = 85 C.
(3) Tamb = 25 C.
(3) Tamb = 25 C.
(4) Tamb = 40 C.
(4) Tamb = 40 C.
Fig 6.
ON resistance as a function of input voltage;
VCC = 1.5 V (nYn port)
Fig 7.
001aag567
1.0
RON
(Ω)
ON resistance as a function of input voltage;
VCC = 1.8 V (nYn port)
001aag568
1.0
RON
(Ω)
0.8
0.8
0.6
0.6
(1)
(2)
(3)
(4)
0.4
0.4
0.2
0.2
0
(1)
(2)
(3)
(4)
0
0
1
2
3
0
VI (V)
(1) Tamb = 125 C.
(2) Tamb = 85 C.
(2) Tamb = 85 C.
(3) Tamb = 25 C.
(3) Tamb = 25 C.
(4) Tamb = 40 C.
(4) Tamb = 40 C.
ON resistance as a function of input voltage;
VCC = 2.5 V (nYn port)
NX3L2267S
Product data sheet
1
2
3
VI (V)
(1) Tamb = 125 C.
Fig 8.
3
VI (V)
Fig 9.
ON resistance as a function of input voltage;
VCC = 2.7 V (nYn port)
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© NXP B.V. 2011. All rights reserved.
8 of 20
NX3L2267S
NXP Semiconductors
Low-ohmic dual single-pole double-throw analog switch
001aag569
1.0
001aaj896
1.0
RON
(Ω)
RON
(Ω)
0.8
0.8
0.6
0.6
(1)
(2)
(3)
(4)
0.4
(1)
(2)
(3)
(4)
0.4
0.2
0.2
0
0
0
1
2
3
4
0
1
2
3
4
VI (V)
5
VI (V)
(1) Tamb = 125 C.
(1) Tamb = 125 C.
(2) Tamb = 85 C.
(2) Tamb = 85 C.
(3) Tamb = 25 C.
(3) Tamb = 25 C.
(4) Tamb = 40 C.
(4) Tamb = 40 C.
Fig 10. ON resistance as a function of input voltage;
VCC = 3.3 V
Fig 11. ON resistance as a function of input voltage;
VCC = 4.3 V
12. Dynamic characteristics
Table 9.
Dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for load circuit see Figure 14.
Symbol Parameter
ten
tdis
enable time
disable time
Tamb = 25 C
Conditions
Product data sheet
Unit
Min
Max
Min
Max
(85 C)
Max
(125 C)
VCC = 1.4 V to 1.6 V
-
50
90
-
120
120
ns
VCC = 1.65 V to 1.95 V
-
36
70
-
80
90
ns
VCC = 2.3 V to 2.7 V
-
24
45
-
50
55
ns
VCC = 2.7 V to 3.6 V
-
22
40
-
45
50
ns
VCC = 3.6 V to 4.3 V
-
22
40
-
45
50
ns
-
32
70
-
80
90
ns
nS to nZ or nYn;
see Figure 12
nS to nZ or nYn;
see Figure 12
VCC = 1.4 V to 1.6 V
NX3L2267S
Tamb = 40 C to +125 C
Typ[1]
VCC = 1.65 V to 1.95 V
-
20
55
-
60
65
ns
VCC = 2.3 V to 2.7 V
-
12
25
-
30
35
ns
VCC = 2.7 V to 3.6 V
-
10
20
-
25
30
ns
VCC = 3.6 V to 4.3 V
-
10
20
-
25
30
ns
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Rev. 2 — 8 November 2011
© NXP B.V. 2011. All rights reserved.
9 of 20
NX3L2267S
NXP Semiconductors
Low-ohmic dual single-pole double-throw analog switch
Table 9.
Dynamic characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for load circuit see Figure 14.
Symbol Parameter
tb-m
Tamb = 25 C
Conditions
Tamb = 40 C to +125 C
Unit
Min
Typ[1]
Max
Min
Max
(85 C)
Max
(125 C)
-
19
-
9
-
-
ns
VCC = 1.65 V to 1.95 V
-
17
-
7
-
-
ns
VCC = 2.3 V to 2.7 V
-
13
-
4
-
-
ns
VCC = 2.7 V to 3.6 V
-
10
-
3
-
-
ns
VCC = 3.6 V to 4.3 V
-
10
-
2
-
-
ns
break-before-make see Figure 13
time
VCC = 1.4 V to 1.6 V
[2]
[1]
Typical values are measured at Tamb = 25 C and VCC = 1.5 V, 1.8 V, 2.5 V, 3.3 V and 4.3 V respectively.
[2]
Break-before-make guaranteed by design.
12.1 Waveform and test circuits
VI
VM
nS input
GND
ten
VOH
nY1 connected to VEXT
tdis
VX
nZ output
OFF to HIGH
HIGH to OFF
VX
GND
tdis
nY0 connected to VEXT
nZ output
HIGH to OFF
OFF to HIGH
VOH
ten
VX
VX
001aak762
GND
Measurement points are given in Table 10.
Logic level: VOH is typical output voltage level that occurs with the output load.
Fig 12. Enable and disable times
Table 10.
Measurement points
Supply voltage
Input
Output
VCC
VM
VX
1.4 V to 4.3 V
0.5VCC
0.9VOH
NX3L2267S
Product data sheet
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Rev. 2 — 8 November 2011
© NXP B.V. 2011. All rights reserved.
10 of 20
NX3L2267S
NXP Semiconductors
Low-ohmic dual single-pole double-throw analog switch
VCC
nS
nY0
nZ
G
VI
V
VO
RL
nY1
VEXT = 1.5 V
CL
GND
012aaa004
a. Test circuit.
VI
0.5VI
0.9VO
0.9VO
VO
tb-m
001aag572
b. Input and output measurement points
Fig 13. Test circuit for measuring break-before-make timing
VCC
G
VI
V
VO
RL
nS
nY0
1
nZ
nY1
2
switch
VEXT = 1.5 V
CL
GND
012aaa005
Test data is given in Table 11.
Definitions test circuit:
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
VEXT = External voltage for measuring switching times.
Fig 14. Test circuit for measuring switching times
Table 11.
Test data
Supply voltage
Input
VCC
VI
tr, tf
CL
RL
1.4 V to 4.3 V
VCC
 2.5 ns
35 pF
50 
NX3L2267S
Product data sheet
Load
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Rev. 2 — 8 November 2011
© NXP B.V. 2011. All rights reserved.
11 of 20
NX3L2267S
NXP Semiconductors
Low-ohmic dual single-pole double-throw analog switch
12.2 Additional dynamic characteristics
Table 12. Additional dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); VI = GND or VCC (unless otherwise
specified); tr = tf 2.5 ns.
Tamb = 25 C
Symbol Parameter
Conditions
THD
fi = 20 Hz to 20 kHz; RL = 32 ; see Figure 15
total harmonic
distortion
Min
Typ
Max
VCC = 1.4 V; VI = 1 V (p-p)
-
0.15
-
%
VCC = 1.65 V; VI = 1.2 V (p-p)
-
0.10
-
%
[1]
VCC = 2.3 V; VI = 1.5 V (p-p)
-
0.02
-
%
VCC = 2.7 V; VI = 2 V (p-p)
-
0.02
-
%
VCC = 4.3 V; VI = 2 V (p-p)
-
0.02
-
%
-
0.01
-
%
-
60
-
MHz
-
90
-
dB
-
0.21
-
V
-
0.30
-
V
-
90
-
dB
VCC = 1.5 V
-
4
-
pC
VCC = 1.8 V
-
6
-
pC
VCC = 2.5 V
-
16
-
pC
VCC = 3.3 V
-
24
-
pC
VCC = 4.3 V
-
37
-
pC
VCC = 3.0 V; VI = 1 V (p-p); RL = 600 
f(3dB)
iso
3 dB frequency
response
RL = 50 ; see Figure 16
isolation (OFF-state)
fi = 100 kHz; RL = 50 ; see Figure 17
[1]
port nYn; VCC = 1.4 V to 4.3 V
[1]
VCC = 1.4 V to 4.3 V
crosstalk voltage
Vct
between digital inputs and switch;
fi = 1 MHz; CL = 50 pF; RL = 50 ; see Figure 18
VCC = 1.4 V to 3.6 V
VCC = 3.6 V to 4.3 V
Xtalk
crosstalk
between switches;
fi = 100 kHz; RL = 50 ; see Figure 19
VCC = 1.4 V to 4.3 V
charge injection
Qinj
[1]
Unit
[1]
fi = 1 MHz; CL = 0.1 nF; RL = 1 M; Vgen = 0 V;
Rgen = 0 ; see Figure 20
fi is biased at 0.5VCC.
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12.3 Test circuits
VCC
0.5VCC
RL
nS
VIL or VIH
switch
nS
1
VIL
2
VIH
nY0 1 switch
nY1 2
nZ
fi
D
GND
012aaa006
Fig 15. Test circuit for measuring total harmonic distortion
VCC
0.5VCC
RL
nS
VIL or VIH
nZ
nY0 1 switch
nY1 2
fi
switch
nS
1
VIL
2
VIH
dB
GND
012aaa007
Adjust fi voltage to obtain 0 dBm level at output. Increase fi frequency until dB meter reads 3 dB.
Fig 16. Test circuit for measuring the frequency response when channel is in ON-state
0.5VCC
VCC
0.5VCC
RL
RL
nS
VIL or VIH
nY0 1 switch
nY1 2
nZ
fi
switch
nS
1
VIH
2
VIL
dB
GND
012aaa008
Adjust fi voltage to obtain 0 dBm level at input.
Fig 17. Test circuit for measuring isolation (OFF-state)
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Low-ohmic dual single-pole double-throw analog switch
switch
nS
1
VIL
2
VIH
VCC
VI
G
logic
input
nS
nY0 1
nZ
nY1 2
switch
RL
RL
0.5VCC
0.5VCC
CL
V
VO
012aaa009
a. Test circuit
logic
input (nS)
off
on
off
Vct
VO
012aaa010
b. Input and output pulse definitions
Fig 18. Test circuit for measuring crosstalk voltage between digital inputs and switch
0.5VCC
1S
VIH
RL
1Y0 or 1Z
50
fi
1Z or 1Y0
CHANNEL
ON
V
VO1
0.5VCC
2S
VIL
RL
2Y0 or 2Z
Ri
50
2Z or 2Y0
CHANNEL
OFF
V
VO2
001aaj088
20 log10 (VO2 / VO1) or 20 log10 (VO1 / VO2).
Fig 19. Test circuit for measuring crosstalk between switches
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Low-ohmic dual single-pole double-throw analog switch
VCC
nS
nY0 1
nZ
nY1 2
switch
Rgen
VI
G
VO
RL
CL
Vgen
GND
012aaa011
a. Test circuit.
logic
(nS) off
input
on
VO
off
ΔVO
012aaa012
b. Input and output pulse definitions
Definition: Qinj = VO  CL.
VO = output voltage variation.
Rgen = generator resistance.
Vgen = generator voltage.
Fig 20. Test circuit for measuring charge injection
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13. Package outline
XQFN10: plastic, extremely thin quad flat package; no leads;
10 terminals; body 1.40 x 1.80 x 0.50 mm
SOT1160-1
X
A
B
D
terminal 1
index area
E
A
A1
A3
detail X
e1
e
3
5
C
C A B
C
v
w
b
y
y1 C
L
2
6
1
7
e2
terminal 1
index area
10
L1
8
0
1
scale
Dimensions
Unit(1)
mm
max
nom
min
2 mm
A
A1
0.5
0.05
A3
b
0.25
0.127 0.20
0.15
0.00
D
E
1.5
1.4
1.3
1.9
1.8
1.7
e
e1
0.4
0.8
e2
0.4
L
L1
0.45 0.55
0.40 0.50
0.35 0.45
v
0.1
w
y
y1
0.05 0.05 0.05
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
References
Outline
version
IEC
JEDEC
JEITA
SOT1160-1
---
---
---
sot1160-1_po
European
projection
Issue date
09-12-28
09-12-29
Fig 21. Package outline SOT1160-1 (XQFN10)
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Rev. 2 — 8 November 2011
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Low-ohmic dual single-pole double-throw analog switch
14. Abbreviations
Table 13.
Abbreviations
Acronym
Description
CDM
Charged Device Model
CMOS
Complementary Metal-Oxide Semiconductor
ESD
ElectroStatic Discharge
HBM
Human Body Model
MM
Machine Model
TTL
Transistor-Transistor Logic
15. Revision history
Table 14.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
NX3L2267S v.2
20111108
Product data sheet
-
NX3L2267S v.1
-
-
Modifications:
NX3L2267S v.1
NX3L2267S
Product data sheet
•
Legal pages updated.
20110823
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 8 November 2011
© NXP B.V. 2011. All rights reserved.
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16. Legal information
16.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
16.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
16.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
NX3L2267S
Product data sheet
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Rev. 2 — 8 November 2011
© NXP B.V. 2011. All rights reserved.
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NXP Semiconductors
Low-ohmic dual single-pole double-throw analog switch
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
17. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
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Rev. 2 — 8 November 2011
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Low-ohmic dual single-pole double-throw analog switch
18. Contents
1
2
3
4
5
6
7
7.1
7.2
8
9
10
11
11.1
11.2
11.3
12
12.1
12.2
12.3
13
14
15
16
16.1
16.2
16.3
16.4
17
18
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
Functional description . . . . . . . . . . . . . . . . . . . 4
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Recommended operating conditions. . . . . . . . 4
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
ON resistance . . . . . . . . . . . . . . . . . . . . . . . . . . 6
ON resistance test circuit and graphs. . . . . . . . 7
Dynamic characteristics . . . . . . . . . . . . . . . . . . 9
Waveform and test circuits . . . . . . . . . . . . . . . 10
Additional dynamic characteristics . . . . . . . . . 12
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17
Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Contact information. . . . . . . . . . . . . . . . . . . . . 19
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 8 November 2011
Document identifier: NX3L2267S