PHILIPS TDA8575T

INTEGRATED CIRCUITS
DATA SHEET
TDA8575
Ground noise isolation amplifier
Preliminary specification
File under Integrated Circuits, IC01
1996 Jul 29
Philips Semiconductors
Preliminary specification
Ground noise isolation amplifier
TDA8575
FEATURES
GENERAL DESCRIPTION
• High common mode rejection up to high frequencies
The TDA8575(T) is a two channel amplifier with differential
input and single-ended output for use in car audio
applications. The differential amplifier has a gain of 0 dB,
a low distortion and a high common mode rejection. The
TDA8575T comes in a 16 pin SO package and TDA8575
comes in a 16 pin DIP package.
• Reduced dependency of common mode rejection on
source resistance
• Low distortion
• Low noise
• AC and DC short-circuit safe
The TDA8575(T) is developed for those car audio
applications where long connections between signal
sources and amplifiers (or boosters) are necessary and
ground noise has to be eliminated.
• Few external components
• ESD protected on all pins.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCC
supply voltage
ICC
supply current
CONDITIONS
VCC = 8.5 V
MIN.
TYP.
MAX.
UNIT
5
8.5
18
V
−
12.6
15
mA
−0.5
0
+0.5
dB
−
1.7
−
V
55
60
−
dB
−
80
−
dB
Gv
voltage gain
Vo(rms)(max)
maximum output voltage (RMS value)
SVRR
supply voltage ripple rejection
CMRR
common mode rejection ratio
Rs = 0 Ω
THD
total harmonic distortion
Vo(rms) = 1 V; f = 1 kHz −
0.005
−
%
Vno
noise output voltage
−
3.7
5
µV
Zi
input impedance
−
108
−
kΩ
Zo
output impedance
−
−
10
Ω
THD = 0.1%
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
TDA8575T
SO16
plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
TDA8575
DIP16
plastic dual in-line package; 16 leads (300 mil); long body
SOT38-1
1996 Jul 29
DESCRIPTION
2
VERSION
Philips Semiconductors
Preliminary specification
Ground noise isolation amplifier
TDA8575
BLOCK DIAGRAM
handbook, full pagewidth
INL+
12
1
108
kΩ
INL−
V I
OUTL
I V
5
360 kΩ
0.5(VCC − 0.7) + 0.7
VCC
16
0.68(VCC − 0.7) + 0.7
8
TDA8575(T)
9
6
7
108
kΩ
V I
I V
11
MGE829
Fig.1 Block diagram.
1996 Jul 29
GND
0.5(VCC − 0.7) + 0.7
360 kΩ
INR+
SVRR
REFERENCE
0.68(VCC − 0.7) + 0.7
INR−
VCC
3
OUTR
Philips Semiconductors
Preliminary specification
Ground noise isolation amplifier
TDA8575
PINNING
SYMBOL
PIN
DESCRIPTION
INL+
1
positive input left
n.c.
2
not connected
n.c.
3
not connected
n.c.
4
not connected
INL−
5
negative input left
INR−
6
negative input right
INR+
7
positive input right
SVRR
8
supply voltage ripple rejection
GND
9
ground
n.c.
10
not connected
OUTR
11
output voltage right channel
OUTL
12
output voltage left channel
n.c.
13
not connected
n.c.
14
not connected
n.c.
15
not connected
VCC
16
supply voltage
handbook, halfpage
INL+
1
16 VCC
n.c.
2
n.c.
3
n.c.
4
handbook, halfpage
INL+
1
16 VCC
15 n.c.
n.c.
2
15 n.c.
14 n.c.
n.c.
3
14 n.c.
13 n.c.
n.c.
4
TDA8575T
INL−
5
12 OUTL
INL−
5
12 OUTL
INR−
6
11 OUTR
INR−
6
11 OUTR
INR+
7
10 n.c.
INR+
7
10 n.c.
SVRR
8
9
SVRR
8
9
GND
MGE828
GND
MGE827
Fig.2 Pin configuration TDA8575T.
1996 Jul 29
13 n.c.
TDA8575
Fig.3 Pin configuration TDA8575.
4
Philips Semiconductors
Preliminary specification
Ground noise isolation amplifier
TDA8575
This is inconvenient for most applications and therefore
the TDA8575(T) is equipped with a quick charge circuit.
On power-on the quick charge circuit charges the
capacitor C2 connected to the IN- pins. The quick charge
circuit consists of a voltage buffer and a control circuit
(referred to as ‘reference and power check’ in Fig.6) that
monitors the supply voltage VCC. If the supply voltage rises
more than ≈ 2 V the voltage buffer is switched on.
After charging C2 the voltage buffer is switched off.
The charge time of C2 will equal the charge time of C4, the
SVRR capacitor.
FUNCTIONAL DESCRIPTION
System description
To enable a high common mode rejection a new system
setup is used. The voltage to current converter, referred to
as V → I in the block diagram of Fig.1, replaces the
resistors that can be seen in the conventional system
solution.
Both systems are shown in Figs 4 and 5. In the
conventional system the common mode rejection is limited
by the matching properties of the resistors resulting in a
CMRR of 60 dB maximum. Using the new system setup a
CMRR of 80 dB is achieved.
Power on
In Fig.6 the preferred input capacitor values are shown.
If the capacitor C2 = 22 µF connected to the IN- inputs had
to be charged by the 0.5Vcc voltage source a charge time
360 kΩ
of 5τ = 5 × ------------------- × 22 µF = 20s would be required.
2
handbook, halfpage
handbook, halfpage
Vi
Vo
Vi
I V
Vo
0.5 VCC
0.5 VCC
MGE830
MGE831
Fig.5 New system using V → I converters.
Fig.4 Conventional system.
1996 Jul 29
V I
5
Philips Semiconductors
Preliminary specification
Ground noise isolation amplifier
TDA8575
handbook, full pagewidth
C1
220 nF
Rs
5 kΩ
TDA8575(T)
INL+ 1
108
kΩ
V I
VOLTAGE
BUFFER
INL− 5
Vi(L)
360 kΩ
switch off
16 VCC
C2
8 SVRR
REFERENCE
AND
POWER CHECK
22 µF
C4
47 µF
Vcm
9 GND
switch off
360 kΩ
Vi(R)
INR− 6
Rs
5 kΩ
C1
INR+ 7
108
kΩ
VOLTAGE
BUFFER
V I
220 nF
MGE832
Fig.6 Quick charge circuit.
1996 Jul 29
6
Philips Semiconductors
Preliminary specification
Ground noise isolation amplifier
TDA8575
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−
18
V
repetitive peak output current
−
40
mA
Vsc
AC and DC short-circuit safe voltage
−
18
V
Tstg
storage temperature
−55
+150
°C
Tamb
operating ambient temperature
−40
+85
°C
Tj
junction temperature
−
+150
°C
VCC
supply voltage
IORM
operating
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
VALUE
UNIT
TDA8575 (DIP16)
75
K/W
TDA8575T (SO16)
110
K/W
thermal resistance from junction to ambient in free air
QUALITY SPECIFICATION
Quality according to UZW-BO/FQ-0601, if this type is used as an audio amplifier.
DC CHARACTERISTICS
VCC = 8.5 V; Tamb = 25 °C; R L = 10 kΩ; in accordance with application circuit (see Fig.9).
SYMBOL
PARAMETER
VCC
supply voltage
ICC
supply current
VO
output voltage
CONDITIONS
Vi = 0 V
note 1
Note
1. The DC output voltage with respect to ground is approximately 0.5VCC.
1996 Jul 29
7
MIN.
TYP.
MAX.
18
UNIT
5
8.5
V
−
12.6
15
mA
−
4.7
−
V
Philips Semiconductors
Preliminary specification
Ground noise isolation amplifier
TDA8575
AC CHARACTERISTICS
VCC = 8.5 V; f = 1 kHz; Rs = 0 kΩ; R L = 10 kΩ; Tamb = 25 °C; in accordance with application circuit (see Fig.9).
SYMBOL
PARAMETER
Gv
voltage gain
αcs
channel separation
∆Gv
channel unbalance
fro(L)
low frequency roll-off
fro(H)
high frequency roll-off
Zi
input impedance
Zo
output impedance
Vi(rms)(max) maximum input voltage (RMS value)
CONDITIONS
MIN.
TYP.
MAX.
UNIT
−0.5
0
+0.5
dB
70
80
−
dB
−
−
0.5
dB
−1 dB; note 2
−
−
20
Hz
−1 dB
20
−
−
kHz
80
108
123
kΩ
Rs = 5 kΩ; note 1
−
−
10
Ω
THD = 1%
−
1.7
−
V
Vno
noise output voltage
unweighted; note 3
−
3.7
5
µV
THD
total harmonic distortion
Vi(rms) = 1 V
−
0.005
0.01
%
Vi(rms) = 1 V;
f = 20 Hz to 20 kHz
−
0.01
−
%
Vi(rms) = 1 V; RL = 150 Ω
−
−
1
%
THDmax
total harmonic distortion at maximum
output current
Vi(cm)(rms)
common-mode input voltage (RMS value)
CMRR
common-mode rejection ratio
SVRR
supply voltage ripple rejection
−
−
1
V
Rs = 5 kΩ
66
80
−
dB
Rs = 0 Ω; note 4
f = 100 Hz to 20 kHz
−
80
−
dB
Rs = 2 kΩ; note 5
55
−
−
dB
Rs = 2 kΩ; note 5
f = 20 Hz to 20 kHz
−
60
−
dB
Notes
1. The channel separation is dependent on the capacitor C2 connected to the IN- input. The channel separation for low
frequencies (<1 kHz) can be increased by using a larger capacitance for C2.
2. The frequency response is externally fixed by the input and output coupling capacitors.
3. The noise output voltage is measured in a bandwidth of 20 Hz up to 20 kHz, unweighted.
4. The common mode rejection ratio is measured at the output with a voltage source Vcm(rms) = 1 V and both
Vi(L) and Vi(R) short-circuited according to Fig.9. The common mode rejection is dependent on the capacitor C2
connected to the IN- input. The common mode rejection for low frequencies (<1 kHz) can be increased by using a
larger capacitance for C2.
5. Supply voltage ripple rejection is measured at the output using a ripple amplitude of 2 V (p-p).
The source resistance Rs = 2 kΩ.
1996 Jul 29
8
Philips Semiconductors
Preliminary specification
Ground noise isolation amplifier
TDA8575
Due to wiring resistance and noise coming from various
electric devices in the automobile, performance loss will
appear in those car audio applications where long
connections between signal sources and amplifiers (or
boosters) are necessary. To solve these problems the
TDA8575(T) is developed (see Figs 7 and 8).
APPLICATION INFORMATION
General
The TDA8575(T) is a two channel amplifier with differential
input and single-ended output for use in car audio
applications. The differential amplifier has a gain of 0 dB,
a low distortion and a high common mode rejection.
Vbat
VCC
handbook, full pagewidth
in
speaker
Vno+Vi
Vi
long cable
tuner
tape
CD
power
amplifier
Vno
car body noise
car body
car body
MGE833
Fig.7 A typical noise problem in car audio systems.
handbook, full pagewidth
ground noise isolation amplifier
VCC
in
VCC
Vno+Vi
Vi
+
long cables
tuner
tape
CD
−
Vno
Vbat
speaker
Vi+Vno / CMRR
power
amplifier
Vno
car body noise
car body
car body
MGE834
Fig.8 The TDA8575(T) eliminates noise problems in car audio systems.
1996 Jul 29
9
Philips Semiconductors
Preliminary specification
Ground noise isolation amplifier
TDA8575
handbook, full pagewidth
C1
108
kΩ
220 nF
Rs
5 kΩ
12 OUTL
INL+ 1
C3
2.2 µF
V I
I V
RL
10 kΩ
INL− 5
360 kΩ
Vi(L)
VCC
VCC = 8.5 V
16 VCC
C2
8 SVRR
TDA8575(T)
22 µF
C5
100 nF
REFERENCE
C4
47 µF
Vcm
9 GND
Vi(R)
360 kΩ
INR− 6
Rs
5 kΩ
C1
INR+ 7
108
kΩ
I V
V I
11 OUTR
220 nF
2.2 µF
MGE835
Fig.9 Application circuit TDA8575(T).
1996 Jul 29
C3
10
RL
10 kΩ
Philips Semiconductors
Preliminary specification
Ground noise isolation amplifier
TDA8575
handbook, full pagewidth
C1
108
kΩ
220 nF
Rs
5 kΩ
12 OUTL
INL+ 1
C3
2.2 µF
V I
I V
RL
10 kΩ
INL− 5
360 kΩ
Vi(L)
C2
VCC
10 µF
Vcm1
VCC = 8.5 V
16 VCC
8 SVRR
TDA8575(T)
C5
100 nF
REFERENCE
C4
47 µF
9 GND
Vcm2
C2
10 µF
Vi(R)
360 kΩ
INR− 6
Rs
5 kΩ
C1
INR+ 7
108
kΩ
I V
V I
11 OUTR
220 nF
C3
2.2 µF
MGE836
Fig.10 Application circuit TDA8575(T) with a balanced signal source.
1996 Jul 29
11
RL
10 kΩ
Philips Semiconductors
Preliminary specification
Ground noise isolation amplifier
TDA8575
PACKAGE OUTLINES
SO16: plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
D
E
A
X
c
y
HE
v M A
Z
16
9
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
1
L
8
e
0
detail X
w M
bp
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
Z (1)
mm
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
10.0
9.8
4.0
3.8
1.27
6.2
5.8
1.05
1.0
0.4
0.7
0.6
0.25
0.25
0.1
0.7
0.3
0.01
0.019 0.0098 0.39
0.014 0.0075 0.38
0.050
0.24
0.23
0.041
0.039
0.016
0.028
0.020
inches
0.0098 0.057
0.069
0.0039 0.049
0.16
0.15
0.01
0.01
0.028
0.004
0.012
θ
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT109-1
076E07S
MS-012AC
1996 Jul 29
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
91-08-13
95-01-23
12
o
8
0o
Philips Semiconductors
Preliminary specification
Ground noise isolation amplifier
TDA8575
DIP16: plastic dual in-line package; 16 leads (300 mil); long body
SOT38-1
ME
seating plane
D
A2
A
A1
L
c
e
Z
b1
w M
(e 1)
b
MH
9
16
pin 1 index
E
1
8
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
min.
A2
max.
b
b1
c
D (1)
E (1)
e
e1
L
ME
MH
w
Z (1)
max.
mm
4.7
0.51
3.7
1.40
1.14
0.53
0.38
0.32
0.23
21.8
21.4
6.48
6.20
2.54
7.62
3.9
3.4
8.25
7.80
9.5
8.3
0.254
2.2
inches
0.19
0.020
0.15
0.055
0.045
0.021
0.015
0.013
0.009
0.86
0.84
0.26
0.24
0.10
0.30
0.15
0.13
0.32
0.31
0.37
0.33
0.01
0.087
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT38-1
050G09
MO-001AE
1996 Jul 29
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
92-10-02
95-01-19
13
Philips Semiconductors
Preliminary specification
Ground noise isolation amplifier
TDA8575
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
WAVE SOLDERING
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
DIP
SOLDERING BY DIPPING OR BY WAVE
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
• The package footprint must incorporate solder thieves at
the downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
REPAIRING SOLDERED JOINTS
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
REPAIRING SOLDERED JOINTS
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
SO
REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
1996 Jul 29
14
Philips Semiconductors
Preliminary specification
Ground noise isolation amplifier
TDA8575
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jul 29
15
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New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 926 5361, Fax. +7 095 564 8323
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66,
Chung Hsiao West Road, Sec. 1, P.O. Box 22978,
TAIPEI 100, Tel. +886 2 382 4443, Fax. +886 2 382 4444
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 825 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
(1) TDA8575_1.mif July 18, 1996 12:44 pm
© Philips Electronics N.V. 1996
SCA51
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
517021/10/01/pp16
Date of release: 1996 Jul 29
Document order number:
9397 750 00985