DISCRETE SEMICONDUCTORS DATA SHEET LLE15180X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input and output prematching ensures good stability and allows an easier design of wideband circuits. LLE15180X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION f (GHz) VCE (V) ICQ (A) PL1 (W) Gpo (dB) ηC (%) Zi; ZL (Ω) Class AB (CW) 1.5 24 0.05 ≥15 ≥7.8 typ. 50 see Figs 6 and 7 PINNING - SOT437A PIN DESCRIPTION 1 collector 2 base 3 emitter connected to flange APPLICATIONS Intended for use in common emitter, class AB amplifiers in CW conditions for professional applications between 1.4 GHz and 1.6 GHz. handbook, 4 columns 1 c b 3 e DESCRIPTION 2 Top view NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange. MAM112 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 18 2 Philips Semiconductors Product specification NPN microwave power transistor LLE15180X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 45 V VCER collector-emitter voltage RBE = 220 Ω − 30 V VCEO collector-emitter voltage open base − 22 V VEBO emitter-base voltage open collector − 3 V IC DC collector current − 3 A Pi input power f = 1.85 GHz; VCE = 24 V; class AB − 4 W Tmb = 75 °C 25 W − Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tsld soldering temperature − 235 °C t ≤ 10 s; note 1 Note 1. Up to 0.2 mm from ceramic. MBD741 30 P tot (W) 20 10 0 0 50 100 150 200 T mb ( o C) Fig.2 Power derating curve. 1997 Feb 18 3 Philips Semiconductors Product specification NPN microwave power transistor LLE15180X THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to mounting base Tj = 100 °C 3.6 K/W Rth mb-h thermal resistance from mounting base to heatsink note 1 0.2 K/W Note 1. See “Mounting recommendations in the General part of handbook SC19a”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 20 V − 1.5 mA V(BR)CER collector-emitter breakdown voltage IC = 10 mA; RBE = 220 Ω 30 − V V(BR)CBO collector-base breakdown voltage IC = 10 mA 45 − V V(BR)EBO emitter-base breakdown voltage IE = 10 mA 3 − V hFE DC current gain IC = 0.5 A; VCE = 3 V 15 100 APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION f (GHz) VCE (V) ICQ (A) PL1 (W) Gpo (dB) ηC (%) Zi; ZL (Ω) Class AB (CW) 1.5 24 0.05 ≥15 typ. 18 ≥7.8 typ. 8.2 typ. 50 see Figs 6 and 7 1997 Feb 18 4 Philips Semiconductors Product specification NPN microwave power transistor LLE15180X 30 handbook, full pagewidth 30 1.4 7.0 7.0 7.0 1.0 9.0 2.0 4.0 1.0 4.0 5.0 40 0.7 6.0 2.5 13.0 40 2 1.0 1.0 2.5 0.7 6.5 9.5 0.7 1.4 2.5 MBD729 handbook, full pagewidth C5 V BB VCC C6 F1 L2 input output L1 C4 C1 C2 C3 MBD730 The test circuit is split into two independent halves, each being 30 × 40 mm in size. Dimensions in mm. Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: εr = 10. Fig.3 Prematching test circuit board. 1997 Feb 18 5 Philips Semiconductors Product specification NPN microwave power transistor LLE15180X PREMATCHING TEST CIRCUIT handbook, full pagewidth BIAS CIRCUIT VCC R1 C6 TR1 C5 R2 F1 P1 D1 R3 L2 C7 L1 DUT D2 MEA600 Fig.4 Class AB bias circuit. List of components (see Figs 3 and 4) COMPONENT DESCRIPTION VALUE ORDERING INFORMATION TR1 transistor, BDT91 or equivalent C1, C4 DC blocking chip capacitor 100 pF C2, C3 trimmer capacitor 0.5 to 5.0 pF Tekelec 727-1 C5, C6 feedthrough bypass capacitor 1500 pF Erie1250-003 C7 electrolytic capacitor 10 µF, >30 V D1 diode BY239 or equivalent; note 1 D2 diode BY239 or equivalent; note 2 L1 4 turns 0.5 mm copper wire; internal diameter = 2 mm L2 4 turns 0.5 mm copper wire; internal diameter = 2 mm P1 linear potentiometer 4.7 kΩ R1 resistor 100 Ω, 0.25 W R2 resistor 10 kΩ, 0.25 W R3 resistor 56 Ω, 0.25 W F1 ferrite bead Philips tube, 12NC = 4330 030 43081 4.2 × 2.2 × 3.2 mm (4B1) Notes 1. In thermal contact with TR1. 2. In thermal contact with DUT. 1997 Feb 18 ATC 100A101kp 6 Philips Semiconductors Product specification NPN microwave power transistor LLE15180X Input and optimum load impedances VCE = 24 V; ICQ = 50 mA; Zo = 10 Ω (see Figs 6 and 7); typical values at PL = PL1. MBD737 25 handbook, halfpage PL (W) 20 I CQ = 100 mA 50 mA 20 mA 15 10 5 0 0 1 2 3 4 P (W) 5 i VCE = 24 V; f = 1850 MHz. Fig.5 Load power as a function of input power. 1997 Feb 18 7 f (GHz) Zi (Ω) ZL (Ω) 1.40 3.7 + j6.9 14.0 − j1.8 1.45 4.6 + j7.4 12.5 + j0.5 1.50 5.8 + j7.7 11.0 + j0.1 1.55 7.4 + j7.8 9.7 + j0.4 1.60 9.3 + j7.4 8.5 + j0.3 Philips Semiconductors Product specification NPN microwave power transistor LLE15180X 1 0.5 2 1.4 GHz 1.5 GHz 0.2 5 Zi 1.6 GHz 10 +j 0.2 0 0.5 2 5 ∞ 10 –j 10 5 0.2 2 0.5 MBD739 1 VCE = 24 V; Zo = 10 Ω; ICQ = 50 mA. Fig.6 Input impedance as a function of frequency; typical values at PL = PL1. 1 0.5 2 ZL 0.2 5 10 +j 0 0.2 0.5 1.5 GHz 2 5 ∞ 10 1.6 GHz –j 1.4 GHz 10 5 0.2 2 0.5 1 MBD738 VCE = 24 V; Zo = 10 W; ICQ = 50 mA. Fig.7 Optimum load impedance as a function of frequency; typical values at PL = PL1. 1997 Feb 18 8 Philips Semiconductors Product specification NPN microwave power transistor LLE15180X PACKAGE OUTLINE 19.1 max 0.13 max 6.5 max 1.7 max 4.8 max 2.3 2.0 seating plane 14.22 0.25 M 1 4.5 min 6.5 6.2 O 3.3 3 4.5 min 2 1.7 max Dimensions in mm. Torque on screws: max. 0.5 Nm. Recommended screw: M3. Recommended pitch for mounting screw: 19 mm. Fig.8 SOT437A. 1997 Feb 18 9 MBB945 Philips Semiconductors Product specification NPN microwave power transistor LLE15180X DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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