DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BFS540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 05 2000 May 30 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 FEATURES DESCRIPTION • High power gain NPN transistor in a SOT323 plastic package. • Low noise figure • Gold metallization ensures excellent reliability 3 handbook, 2 columns • High transition frequency PINNING PIN • SOT323 package. 1 APPLICATIONS DESCRIPTION 1 base 2 Top view 2 emitter 3 collector RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz. MBC870 Marking code: N4. Fig.1 SOT323. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 20 V VCEO collector-emitter voltage open base − − 15 V IC DC collector current − − 120 mA Ptot total power dissipation Ts ≤ 80 °C; note 1 − − 500 mW hFE DC current gain IC = 40 mA; VCE = 8 V; Tj = 25 °C 100 120 250 fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C − 9 − GHz GUM maximum unilateral power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C − 14 − dB F noise figure IC = 10 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C − 1.3 1.7 dB Note 1. Ts is the temperature at the soldering point of the collector tab. LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCES collector-emitter voltage RBE = 0 − 15 V open collector − 2.5 V − 120 mA − 500 mW VEBO emitter-base voltage IC DC collector current Ptot total power dissipation Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C Ts ≤ 80 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector tab. 2000 May 30 2 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point VALUE UNIT 190 K/W Ts ≤ 80 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCE = 8 V − − 50 hFE DC current gain IC = 40 mA; VCE = 8 V 100 120 250 Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 2 − pF nA Cc collector capacitance IE = ie = 0; VCB = 8 V; f = 1 MHz − 0.9 − pF Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz − 0.6 − pF fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C − 9 − GHz GUM maximum unilateral power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; (note 1) Tamb = 25 °C − 14 − dB IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C − 8 − dB |s21|2 insertion power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C 12 13 − dB F noise figure Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C − 1.3 1.8 dB Γs = Γopt; IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C − 1.9 2.4 dB Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C − 2.1 − dB PL1 output power at 1 dB gain compression Ic = 40 mA; VCE = 8 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C − 21 − dBm ITO third order intercept point note 2 − 34 − dBm Notes 1. GUM is the maximum unilateral power gain, assuming s12 is zero and 2 s 21 - dB. G UM = 10 log ------------------------------------------------------2 2 ( 1 – s 11 ) ( 1 – s 22 ) 2. IC = 40 mA; VCE = 8 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at f(2p−q) = 898 MHz and at f(2q−p) = 904 MHz. 2000 May 30 3 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 MRC008 - 1 400 handbook, halfpage MRC010 200 handbook, halfpage Ptot (mW) h FE 300 150 200 100 100 50 0 0 50 100 150 0 10−2 200 T ( o C) 10−1 1 10 s IC (mA) 102 VCE = 8 V; Tj = 25 °C. VCE ≤ 10 V. Fig.3 DC current gain as a function of collector current. Fig.2 Power derating curve. MRC001 1 MRC002 12 handbook, halfpage handbook, halfpage Cre (pF) fT (GHz) 0.8 VCE = 8 V 8 0.6 4V 0.4 4 0.2 0 0 2 4 6 8 0 10 12 VCB (V) 1 10 IC = 0; f = 1 MHz. f = 1 GHz; Tamb = 25 °C. Fig.4 Fig.5 Feedback capacitance as a function of collector-base voltage. 2000 May 30 4 I C (mA) 102 Transition frequency as a function of collector current. Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. MRC007 20 GUM (dB) MRC006 15 handbook, halfpage handbook, halfpage gain (dB) 16 VCE = 8 V 4V 10 G max 12 GUM 8 5 4 0 0 10 20 30 0 40 50 IC (mA) f = 900 MHz; Tamb = 25 °C. 0 20 40 IC (mA) 60 VCE = 8 V; f = 2 GHz; Tamb = 25 °C. Fig.6 Maximum unilateral power gain as a function of collector current. Fig.7 Gain as a function of collector current. MRC004 50 MRC005 50 gain handbook, halfpage handbook, halfpage gain (dB) 40 (dB) 40 G UM G UM 30 30 MSG MSG 20 20 G max G max 10 10 0 10−2 10−1 1 f (GHz) 0 10−2 10 IC = 10 mA; VCE = 8 V; Tamb = 25 °C. 1 f (GHz) 10 IC = 40 mA; VCE = 8 V; Tamb = 25 °C. Fig.8 Gain as a function of frequency. 2000 May 30 10−1 Fig.9 Gain as a function of frequency. 5 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 MRC009 4 MRC003 4 handbook, halfpage handbook, halfpage F F (dB) (dB) IC = 40 mA 3 3 10 mA f= 2 GHz 2 2 900 MHz 1 0 1 500 MHz 1 10 IC (mA) 0 10−1 102 1 f (GHz) 10 VCE = 8 V; Tamb = 25 °C. VCE = 8 V; Tamb = 25 °C. Fig.10 Minimum noise figure as a function of collector current. Fig.11 Minimum noise figure as a function of frequency. 2000 May 30 6 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 handbook, full pagewidth 90° 1.0 1 135° pot. unst. region 0.8 45° 2 0.5 0.6 0.2 0.4 5 Fmin = 1. 3 dB 0.2 ΓOPT 180° 0.2 0 0.5 1 2 5 0° F = 1.5 dB 0 F = 2 dB stability circle 5 0.2 F = 3 dB 0.5 −135° 2 −45° 1 MRC079 IC = 10 mA; VCE = 8 V; f = 900 MHz; Zo = 50 Ω. 1.0 −90° Fig.12 Noise circle. 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 180° F = 4 dB F = 3 dB F = 2.5 dB 0.5 1 0.2 0 0.4 5 0.2 2 5 0° 0 ΓMS Gmax = 8.7 dB Fmin = 2. 1 dB G = 8 dB ΓOPT 0.2 5 G = 7 dB G = 6 dB −135° 0.5 2 −45° 1 MRC080 IC = 10 mA; VCE = 8 V; f = 2 GHz; Zo = 50 Ω. −90° Fig.13 Noise circle. 2000 May 30 7 1.0 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 3 GHz 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 0.2 5 0° 5 40 MHz 0.5 −135° 2 0 −45° 1 MRC062 −90° IC = 40 mA; VCE = 8 V; Zo = 50 Ω. Fig.14 Common emitter input reflection coefficient (s11). 90° handbook, full pagewidth 135° 45° 40 MHz 3 GHz 180° 50 40 30 20 0° 10 −135° −45° −90° MRC063 IC = 40 mA; VCE = 8 V. Fig.15 Common emitter forward transmission coefficient (s21). 2000 May 30 8 1.0 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 90° handbook, full pagewidth 135° 45° 3 GHz 40 MHz 180° 0.5 0.4 0.3 0.2 0° 0.1 −135° −45° −90° MRC064 IC = 40 mA; VCE = 8 V. Fig.16 Common emitter reverse transmission coefficient (s12). 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 5 0° 0 3 GHz 40 MHz 5 0.2 −135° 0.5 2 −45° 1 MRC065 IC = 40 mA; VCE = 8 V; Zo = 50 Ω. −90° Fig.17 Common emitter output reflection coefficient (s22). 2000 May 30 9 1.0 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 2000 May 30 REFERENCES IEC JEDEC EIAJ SC-70 10 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. 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