DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PSS9012 series 20 V PNP general purpose transistors Product specification Supersedes data of 2003 May 15 2004 Aug 10 Philips Semiconductors Product specification 20 V PNP general purpose transistors FEATURES PSS9012 series QUICK REFERENCE DATA • High power dissipation: 710 mW SYMBOL • Low collector capacitance PARAMETER MAX. UNIT VCEO collector-emitter voltage −20 V • Low collector-emitter saturation voltage IC collector current (DC) −500 mA • High current capability. ICM peak collector current −1 A APPLICATIONS PINNING • General purpose switching and amplification. PIN DESCRIPTION PNP general purpose transistor in a SOT54 (TO-92) leaded plastic package. NPN complement: PSS9013 series. DESCRIPTION 1 collector 2 base 3 emitter handbook, halfpage1 MARKING TYPE NUMBER 1 2 3 2 MARKING CODE PSS9012G S9012G PSS9012H S9012H 3 MAM280 Fig.1 Simplified outline (SOT54; TO-92) and symbol. LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −40 V VCEO collector-emitter voltage open base − −20 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −500 mA ICM peak collector current − −1 A IBM peak base current − −100 mA Ptot total power dissipation − 710 mW Tstg storage temperature Tamb ≤ 25 °C; note 1 −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated and standard footprint. 2004 Aug 10 2 Philips Semiconductors Product specification 20 V PNP general purpose transistors PSS9012 series THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 175 K/W in free air; note 1 Note 1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated and standard footprint. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. UNIT VCB = −35 V; IE = 0 − − −100 nA VCB = −35 V; IE = 0; Tj = 150 °C − − −50 µA nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 − − −100 hFE DC current gain VCE = −1 V; IC = −500 mA 40 − − hFE DC current gain VCE = −1 V; IC = −50 mA 112 − 166 PSS9012G 144 − 202 collector-emitter saturation voltage IC = −100 mA; IB = −10 mA − −60 −250 mV IC = −500 mA; IB = −50 mA − −230 −600 mV VBEsat base-emitter saturation voltage IC = −500 mA; IB = −50 mA − −1 −1.2 V VBEon base-emitter turn on voltage VCE = −1 V; IC = −100mA − −760 −1000 mV Cc collector capacitance VCB = −6 V; IE = Ie = 0; f = 1 MHz − 6 − pF PSS9012H VCEsat 2004 Aug 10 3 Philips Semiconductors Product specification 20 V PNP general purpose transistors MLE084 103 handbook, halfpage PSS9012 series MLE085 −30 fT (MHz) handbook, halfpage (1) IC (mA) (2) (3) −20 (4) 102 (5) −10 (6) (7) 10 −1 −10 −102 IC (mA) 0 −103 −4 0 −8 −12 −20 −16 VCE (V) Tamb = 25 °C. (1) IB = −140 µA. (2) IB = −120 µA. (3) IB = −100 µA. VCE = −6 V. Fig.2 Transition frequency as a function of collector current; typical values. Fig.3 MLE082 300 MLE083 handbook, halfpage (1) (1) hFE 200 200 (2) (2) 100 −1 (3) 100 (3) 0 −10−1 −10 −102 IC (mA) 0 −10−1 −103 VCE = −1 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = −2 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 Fig.5 DC current gain as a function of collector current; typical values. 2004 Aug 10 (7) IB = −20 µA. Collector current as a function of collector-emitter voltage; typical values. 300 handbook, halfpage hFE (4) IB = −80 µA. (5) IB = −60 µA. (6) IB = −40 µA. 4 −1 −10 −102 −103 IC (mA) DC current gain as a function of collector current; typical values. Philips Semiconductors Product specification 20 V PNP general purpose transistors MLE080 −103 handbook, halfpage PSS9012 series MLE081 −103 handbook, halfpage VCEsat VCEsat (mV) (mV) −102 −102 (1) (1) (3) (2) (3) (2) −10 −1 −10−1 −1 −10 −102 −10 IC (mA) −1 −10−1 −103 IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.6 Fig.7 Collector-emitter saturation voltage as a function of collector current; typical values. MLE078 103 handbook, halfpage RCEsat (Ω) 102 102 10 10 −1 −10 10−1 −10−1 −103 IC (mA) IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 20. (1) Tamb = 25 °C. (2) Tamb = 100 °C. (3) Tamb = −55 °C. Fig.8 Fig.9 Collector-emitter equivalent on-resistance as a function of collector current; typical values. 2004 Aug 10 5 −103 (1) (2) (3) −102 IC (mA) MLE079 1 (1) 10−1 −10−1 −102 103 handbook, halfpage (Ω) (2) −10 Collector-emitter saturation voltage as a function of collector current; typical values. RCEsat 1 −1 −1 −10 (3) −102 −103 IC (mA) Collector-emitter equivalent on-resistance as a function of collector current; typical values. Philips Semiconductors Product specification 20 V PNP general purpose transistors MLE076 −1.2 PSS9012 series MLE077 −1.2 handbook, halfpage handbook, halfpage VBEsat VBEsat (V) (V) (1) (1) −0.8 −0.8 (2) (2) (3) (3) −0.4 0 −10−1 −0.4 −1 −10 −102 0 −10−1 −103 −1 −10 IC (mA) −102 −103 IC (mA) IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.10 Base-emitter saturation voltage as a function of collector current; typical values. Fig.11 Base-emitter saturation voltage as a function of collector current; typical values. MLE074 −1.2 handbook, halfpage VBE VBE (V) (V) −0.8 (1) −0.8 (1) (2) (2) (3) (3) −0.4 0 −10−1 MLE075 −1.2 handbook, halfpage −0.4 −1 −10 −102 IC (mA) 0 −10−1 −103 −1 −10 −102 −103 IC (mA) VCE = −1 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. VCE = −2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.12 Base-emitter voltage as a function of collector current; typical values. Fig.13 Base-emitter voltage as a function of collector current; typical values. 2004 Aug 10 6 Philips Semiconductors Product specification 20 V PNP general purpose transistors PSS9012 series PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 e 2.54 e1 L L1(1) 1.27 14.5 12.7 2.5 max. Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 2004 Aug 10 REFERENCES IEC JEDEC JEITA TO-92 SC-43A 7 EUROPEAN PROJECTION ISSUE DATE 97-02-28 04-06-28 Philips Semiconductors Product specification 20 V PNP general purpose transistors PSS9012 series DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2004 Aug 10 8 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA76 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp9 Date of release: 2004 Aug 10 Document order number: 9397 750 13684