DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D183 BYX120G High-voltage soft-recovery controlled avalanche rectifier Product specification Supersedes data of May 1996 1996 Sep 26 Philips Semiconductors Product specification High-voltage soft-recovery controlled avalanche rectifier BYX120G FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed construction. • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. handbook, halfpage APPLICATIONS k a MSB026 • Car ignition systems • Automotive applications with extreme temperature requirements. The cathode is marked by an orange band on the body. Fig.1 Simplified outline (SOD88A) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. VRRM repetitive peak reverse voltage − 3 kV VRWM crest working reverse voltage − 3 kV IF(AV) average forward current − 100 IFRM repetitive peak forward current − 5 A IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRWMmax − 15 A PRSM non-repetitive peak reverse power dissipation t = 10 µs; triangular pulse; Tj = Tj max prior to surge − 3 Tstg storage temperature Tj junction temperature 1996 Sep 26 mA kW −65 +200 °C continuous −65 +180 °C maximum 30 mins −65 +200 °C 2 Philips Semiconductors Product specification High-voltage soft-recovery controlled avalanche rectifier BYX120G ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 250 mA − − V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA 3.5 − − kV IR reverse current VR = VRWMmax; Tj = 180 °C − − 75 µA 5 V THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient 1996 Sep 26 Tamb = Tleads 3 VALUE UNIT 55 K/W Philips Semiconductors Product specification High-voltage soft-recovery controlled avalanche rectifier PACKAGE OUTLINE handbook, full pagewidth 3.8 max Dimensions in mm. The marking band indicates the cathode. 30.5 min 8 max BYX120G 0.81 max 30.5 min MSA215 - 3 Fig.2 SOD88A. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 26 4