PHILIPS LV2327E40R

DISCRETE SEMICONDUCTORS
DATA SHEET
LV2327E40R
NPN microwave power transistor
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC15
1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES
• Interdigitated structure provides
high emitter efficiency
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Gold metallization realizes very
stable characteristics and excellent
lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance.
• Input and output matching cell
improves the impedances and
facilitates the design of wideband
circuits.
LV2327E40R
QUICK REFERENCE DATA
Microwave performance for Tcase = 25 °C in a wideband common-emitter
class A circuit.
MODE OF
OPERATION
CW; linear
amplifier
f
(MHz)
VCE
(V)
IC
(A)
2.3 to 2.7 16
PL1
(W)
≥4
1
GPO
(dB)
≥7
Zi
(Ω)
11 + j3
ZL
(Ω)
7.5 − j9
PINNING - SOT445B
PIN
DESCRIPTION
1
collector
2
base
3
emitter connected to flange
APPLICATIONS
handbook, halfpage
1
c
Common emitter class A linear
wideband power amplifiers in the
2.3 to 2.7 GHz band.
b
3
DESCRIPTION
3
e
2
NPN silicon planar epitaxial
microwave power transistor in a
SOT445B metal ceramic flange
package, with emitter connected to
the flange.
Top view
MAM315
Marking code: 2327E40R.
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LV2327E40R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
40
V
VCEO
collector-emitter voltage
open base
−
15
V
VCER
collector-emitter voltage
RBE = 47 Ω
−
20
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
2
A
Ptot
total power dissipation
−
18
W
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
Tsld
soldering temperature
Tmb ≤ 75 °C
t ≤ 10 s; note 1
−
200
°C
−
235
°C
Note
1. At 0.3 mm from the case.
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Feb 18
3
Philips Semiconductors
Product specification
NPN microwave power transistor
LV2327E40R
PACKAGE OUTLINE
8.0
handbook, full pagewidth
0.1
5.3
max
3.4
3.0
3
1.8 max
20.6 max
seating
plane
3.2
2.9
0.4 M
1
4.0 min
3.2
2.9
5.2
max
O 0.3 M
5.35
max
4.0 min
2
7.1
3.2
2.9
0.4 M
MSA094 - 1
14.2
Dimensions in mm.
Torque on nut: max. 0.4 Nm.
Recommended screw: M2.5.
Fig.2 SOT445B.
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Feb 18
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LV2327E40R
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of this specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Feb 18
5
Philips Semiconductors
Product specification
NPN microwave power transistor
LV2327E40R
NOTES
1997 Feb 18
6
Philips Semiconductors
Product specification
NPN microwave power transistor
LV2327E40R
NOTES
1997 Feb 18
7
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© Philips Electronics N.V. 1997
SCA53
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Printed in The Netherlands
127147/00/02/pp8
Date of release: 1997 Feb 18
Document order number:
9397 750 01722