DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYV160 Ultra fast low-loss rectifier Product specification 2000 Feb 01 Philips Semiconductors Product specification Ultra fast low-loss rectifier BYV160 FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability 3 page k(Datasheet) • Available in ammo-pack. DESCRIPTION Rugged glass SOD57 package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. a MAM047 Fig.1 Simplified outline (SOD57) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 600 V VR continuous reverse voltage − 600 V IF(AV) average forward current Ttp = 60 °C; lead length = 10 mm; see Fig.5; averaged over any 20 ms period; see Fig.6 − 2 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = 25 °C; VR = VRRMmax − 40 A Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C see Fig.7 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF IR trr 2000 Feb 01 PARAMETER forward voltage reverse current reverse recovery time CONDITIONS MAX. UNIT IF = 2 A; Tj = Tj max; see Fig.2 1.00 V IF = 2 A; see Fig.2 1.20 V VR = VRRMmax; see Fig.3 5 µA VR = VRRMmax; Tj = 150 °C; see Fig.3 150 µA when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A 50 ns 2 Philips Semiconductors Product specification Ultra fast low-loss rectifier BYV160 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 46 K/W Rth j-a thermal resistance from junction to ambient note 1 100 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.8. For more information please refer to the ‘General Part of associated Handbook’. 2000 Feb 01 3 Philips Semiconductors Product specification Ultra fast low-loss rectifier BYV160 GRAPHICAL DATA MGS382 10 102 handbook, halfpage handbook, halfpage IF (A) IR (µA) 8 Tj = 175 °C 100 °C 25 °C MGS385 Tj = 175 °C 10 6 100 °C 1 4 10−1 2 25 °C 10−2 0 0 0.4 0 0.8 1.2 1.6 2 200 400 VF (V) Fig.2 Fig.3 Forward current as a function of forward voltage; typical values. MGL717 102 handbook, halfpage VR (V) 600 Reverse current as a function of reverse voltage; typical values. MGL714 3.0 handbook, halfpage IF(AV) (A) Cd (pF) lead length = 10 mm 2.0 Tj = 25 °C 10 1.0 1 1 10 VR (V) 0.0 102 0 Fig.5 Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2000 Feb 01 4 40 80 120 160 200 Ttp (°C) Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Philips Semiconductors Product specification Ultra fast low-loss rectifier BYV160 MGL715 4.0 handbook, halfpage a=3 MGK645 200 handbook, halfpage 2.5 2 P (W) Tj (°C) 1.57 1.42 3.0 100 2.0 1.0 0.0 0.0 0 0.5 1.5 1.0 2.0 50 0 2.5 3.0 IF(AV) (A) VR (%VRmax) 100 Solid line = VR. Dotted line = VRRM; δ = 0.5. Fig.6 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Fig.7 50 handbook, halfpage 25 7 50 2 3 MGA200 Dimensions in mm. Fig.8 Device mounted on a printed-circuit board. 2000 Feb 01 5 Maximum permissible junction temperature as a function of maximum reverse voltage percentage. Philips Semiconductors Product specification Ultra fast low-loss rectifier PACKAGE OUTLINE BYV160 Hermetically sealed glass package; axial leaded; 2 leads SOD57 (1) k D G L a b L DIMENSIONS (mm are the original dimensions) UNIT b max. D max. G max. L min. mm 0.81 3.81 4.57 28 0 2.5 5 mm scale Note 1. The marking band indicates the cathode. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-10-14 SOD57 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2000 Feb 01 6 Philips Semiconductors Product specification Ultra fast low-loss rectifier BYV160 NOTES 2000 Feb 01 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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