Silicon Switching Diode Array BAV 99 Features For high-speed switching ● Connected in series ● Type Marking Ordering Code (tape and reel) BAV 99 A7s Q68000-A549 Pin Configuration Package1) SOT-23 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage VR 70 V Peak reverse voltage VRM 70 Forward current IF 200 mA Surge forward current, t = 1 µs IFS 4.5 A Total power dissipation, TS = 31 ˚C Ptot 330 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 1)For detailed information see chapter Package Outlines. Semiconductor Group 1 04.96 BAV 99 Thermal Resistance Junction - ambient2) Rth JA ≤ 500 Junction - soldering point Rth JS ≤ 360 K/W Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 70 – – DC characteristics Breakdown voltage I(BR) = 100 µA V(BR) Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA VF Reverse current VR = 70 V VR = 25 V, TA = 150 ˚C VR = 70 V, TA = 150 ˚C IR V mV – – – – – – – – 715 855 1000 1250 µA – – – – – – 2.5 30 50 AC characteristics Diode capacitance VR = 0 V, f = 1 MHz CD – – 1.5 pF Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA trr – – 6 ns 2)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BAV 99 Test Circuit for Reverse Recovery Time R = 50 Ω tr = 0.35 ns C ≤ 1 pF Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50 Ω Oscillograph: Forward current IF = f (TA*; TS) * Package mounted on epoxy Forward current IF = f (VF) TA = 25 ˚C Semiconductor Group 3 BAV 99 Reverse current IR = f (TA) Forward voltage VF = f (TA) Peak forward current IFM = f (t) TA = 25 ˚C Semiconductor Group 4