ICs for Communications MIXER PMB 2331 Version 1.2 Preliminary Data Sheet 02.96 T2331-XV12-P1-7600 PMB 2331 Revision History: Previous Version: Page (in Version) Page (in new Version) Current Version: 02.96 none Subjects (major changes since last revision) Edition 02.96 Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, Balanstraße 73, 81541 München © Siemens AG 1996. All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express written approval of the Semiconductor Group of Siemens AG. 1 A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. PMB 2331 Table of Contents Page 1 1.1 1.2 1.3 1.4 1.5 1.6 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Functional Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Circuit Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2.1 2.2 2.3 2.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Operational Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 AC/DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 3 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Semiconductor Group 3 4 4 4 5 5 6 7 02.96 MIXER PMB 2331 Version 1.2 Bipolar IC 1 Overview 1.1 Functional Description • • • • • • • • • • • • New B6HF bipolar techology, 25 GHz fT Reduced external components Frequency range up to 2.0 GHz 2.7-4.5 V supply voltage Mixer current adjustable with external resistors 1.6mA current consumption typical (no external resistors used) – 40 ˚C to + 85 ˚C operational temperature range Gilbert cell mixer Very highly isolated RF, LO and IF ports Good crosstalk performance Low noise Low spurious signal content 1.2 • • • • • P-DSO-8-1 Applications: Cellular radio mixer Cordless telephone mixer UHF transceiver RF data links RF/VHF/UHF frequency conversion Type Ordering Code PMB 2331 Semiconductor Group Package P-DSO-8-1 4 02.96 PMB 2331 1.3 Pin Configuration (top view) P-DSO-8-1 Figure 1 1.4 Pin Definitions and Functions Pin No. Symbol Function 1 MO Mixer signal output, open collector, not inverted 2 MOX Mixer signal output, open collector, inverted 3 VS Mixer voltage supply 4 LOX Mixer local oscillator signal base input, inverted 5 LO Mixer local oscillator signal base input, not inverted 6 GND Mixer ground 7 MI Mixer signal emitter input, not inverted 8 MIX Mixer signal emitter input, inverted Semiconductor Group 5 02.96 PMB 2331 1.5 Functional Block Diagram Figure 2 Semiconductor Group 6 02.96 PMB 2331 1.6 Circuit Description The mixer used in this design is a general purpose up-/downconversion gilbert cell mixer. An amplified and filtered RF signal enters the IC via the pins MI/MIX. Using an external supplied local oscillator at LO/LOX a converted output signal is created at the open collector output pins MO/MOX, which have to be connected to an external voltage supply. The RF connections to the mixer inputs may be single ended or balanced, capacitive or inductive coupled. Voltage supply for the mixer has to be connected to the pins VS and GND. To increase the mixer current resistors need to be connected between the pins MI and GND, and between the pins MIX and GND. Differential signals and symmetrical circuits are used throughout the IC. An internal bias driver generates supply voltage and temperature compensated reference voltages. All pins with the exception of GND are ESD protected. Semiconductor Group 7 02.96 PMB 2331 2 Electrical Characteristics 2.1 Absolute Maximum Ratings TA = – 40 ˚C to + 85 ˚C # Parameter 1 Supply voltage 2a Input voltage MI/MIX 2b Input voltage LO/LOX 3 Open collector output voltage 4 Differential input voltage 5 Junction temperature 6 Storage temperature 7 Thermal resistance Symbol VS VMI/MIX VLO/LOX VMO/MOX Limit Values min. max. – 0.3 5.5 V – 0.3 1.9 V 0.6 VS + 0.3 VS + 0.3 V 2.0 VPP 125 ˚C 125 ˚C 185 K/W 1.3 VDIFF Tj TS RthJA Unit – 40 Remarks VS = 0 V V Note: Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.2 Operational Range Within the operational range the IC operates as described in the circuit description. The AC/DC characteristic limits are not guaranteed. VVCC = 2.7 V...4.5 V, TA = – 40 ˚C to 85 ˚C # Parameter Symbol Limit Values min. 1 MI/X Input Frequency 2 LO/X Input Frequency 3 IF Intermediate Frequency fMI fLO fIF Unit Remarks max. 2000 MHz 2000 MHz 2000 MHz Note: Power levels refer to 50 Ω impedance. In the operating range the functions given in the circuit description are fulfilled. Semiconductor Group 8 02.96 PMB 2331 2.3 # AC/DC Characteristics VVCC = 2.7 V to 4.5V, TA = 25 ˚C Parameter Symbol Limit Values min. typ. Unit Test Condition max. Test Circuit Supply Current 1 Supply current, total IC I1,2,3 1.6 mA without external 1a,b resistors R1,2 2 Supply current, total IC I1,2,3 4.6 mA including external resistors R1,2 1)(=180 Ω) 1a,b – 16 dBm f = 0.9 GHz 1a MIXER, Signal Input MI/MIX, Down Conversion, R1,2 = 180 Ω 3 Input impedance S11M 4 Max. input level, 1 db comp. at MO/MOX, IF = 45 MHz PMI 5 Input intercept point, IICP3MI ∆f = 800 kHz, IF = 45 MHz –2 dBm f = 0.9 GHz 1a 6 PBL Blocking level ∆f = 800 kHz, IF = 45 MHz – 16 dBm f = 0.9 GHz 1a 7 Noise figure, ssb, (NFSSB ≈ NFdsb + 3 dB) IF = 45 MHz 9.5 dB f = 0.9 GHz 2) 1a dBm f = 0.9 GHz 3) 1a,b Diagram 2a FMI MIXER, Local Oscillator Input LO/LOX 8 Input impedance S11LO 9 Input level PLO Diagram 2b –3 Notes see page 10. Semiconductor Group 9 02.96 PMB 2331 2.3 # AC/DC Characteristics (cont’d) VVCC = 2.7 V to 4.5V, TA = 25 ˚C Parameter Symbol Limit Values min. typ. Unit Test Condition max. Test Circuit MIXER, Signal Output MO/MOX, Down Conversion, R1,2 = 180 Ω 10 Output current IMO+ 4.0 mA including 1a,b external resistors R1, R2 MOX 11 Output resistance RMODiff 38 kΩ IF = 45 MHz 1a 12 Output resistance RMODiff 24 kΩ IF = 300 MHz 1b 13 Output capacitance CMODiff 0.34 pF IF = 45 MHz 1a 14 Output capacitance CMODiff 0.38 pF IF = 300 MHz 1b 15 Power gain, IF = 45 MHz PMI 14 dB f = 0.9 GHz 1a 16 Power gain, IF = 300 MHz PMI 7 dB f = 0.9 GHz 1b MIXER, Isolation Between In-/Output, 0.9 GHz 17 MI to MO AMI-MO 30 dB fMI = 945 MHz fLO = 900 MHz 1a 18 LO to MO ALO-MO 50 dB “ 1a 19 LO to MI ALO-MI 50 dB “ 1a 20 MO to MI AMO-MI 50 dB “ 1a 21 MO to LO AMO-LO 60 dB “ 1a 1) Minimum value for R41 = R2 = 33 Ω. 2) Matching network used. 3) Referenced for specified mixer performance. Note: The listed characteristics are ensured over the operating range of the integrated circuit. Typical characteristics specify mean values expected over the production spread. If not otherwise specified, typical characteristics apply at TA = 25 °C and the given supply voltage. Semiconductor Group 10 02.96 PMB 2331 2.4 Test Circuits Figure 3 Test Circuit 1a Test Circuit for 45 MHz Intermediate Frequency Test Circuit fIF [MHz] CB [pF] CK [pF] X 1a 45 15 p/100 p 15 p X Semiconductor Group 11 02.96 PMB 2331 Figure 4 Test Circuit 1b Test Circuit for 300 MHz Intermediate Frequency Test Circuit fIF[MHz] L0[nH] L1[nH] C1[pF] C2[pF] C3[pF] CK[pF] 1b ≈ 300 680 150 2.7 12 1.8 15p Semiconductor Group 12 02.96 PMB 2331 Figure 5 Test Circuit 2 S-Parameter Measurement of Mixer S11, S12, S21, S2 Test Test Frequency [GHz] Pin X Pin Y LO-Input impedance .. - 3.0 4 5 Mi-Input impedance .. - 3.0 7 8 MO-Output impedance .. - 3.0 1 2 The S-Parameters are tested at the indicated frequency and the equivalent parallel or series circuit is calculated on this base. Via the NWA the capacitive coupling is done and the open collector pins are connected to VCC. The output levels at port1 and 2 for pin x and y are – 30 dbm for MI and MOimpedances and – 5 dbm for the LO impedance. S-Parameters have to be considered as design hints and are measured with SIEMENS testboards (RT/Duroid 5880 Teflon, ε = 2.2). Semiconductor Group 13 02.96 PMB 2331 Figure 6 Test Circuit 2a Mixer Input Impedance Measurement Figure 7 Test Circuit 2b Mixer Local Oscilllator Impedance Measurement Semiconductor Group 14 02.96 PMB 2331 Figure 8 Test Circuit 2c Mixer Output Impedance Measurement Semiconductor Group 15 02.96 PMB 2331 Electrical Characteristics Diagram 2a S-Parameter Mixer Input MI Impedance, IMO/MOX = 4 mA; f = .. 3 GHz Semiconductor Group 16 PMB 2331 Electrical Characteristics Diagram 2b S-Parameter Mixer Input LO Impedance, IMO/MOX = 4 mA; f = .. 3 GHz Semiconductor Group 17 PMB 2331 Application Circuit Application circuit: In evaluation General applications also refer to the PMB 2330 application note (different values) Semiconductor Group 18 02.96 PMB 2331 3 Package Outlines GPS05121 P-DSO-8-1 (Plastic Dual Small Outline Package) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Semiconductor Group 19 Dimensions in mm 02.96 PMB 2331 Semiconductor Group 20 02.96 PMB 2331 Semiconductor Group 21 02.96