MICROSEMI 1N829

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
– Monolithic Temperature Compensated Zener Reference Chips
– All Junctions Completely Protected with Silicon Dioxide
– Electrically Equivalent to 1N821 Thru 1N829
– Compatible with all Wire Bonding and Die Attach Techniques with
the Exception of Solder Reflow
ZENER DIODE
Qualified per MIL-PRF-19500/159
DEVICES
QUALIFIED LEVELS
1N821
1N823
1N825
1N827
1N829
JANHC
JANKC
(For 1N821 thru 1N829)
MAXIMUM RATING AT 25°C
Operating Temperature:
-65°C to +175°C
Storage Temperature:
-65°C to +175°C
A
REVERSE LEAKAGE CURRENT
IR = 2μA @ 25°C & VR = 3Vdc
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
TYPE
NUMBER
1N821
1N823
1N825
1N827
1N829
ZENER
VOLTAGE
ZENER
TEST
CURRENT
MAXIMUM
ZENER
IMPEDANCE
VZT @ IZT
IZT
VOLTS
5.9 – 6.5
5.9 – 6.5
5.9 – 6.5
5.9 – 6.5
5.9 – 6.5
mA
7.5
7.5
7.5
7.5
7.5
C
T
EFFECTIVE
TEMPERATURE
COEFFICIENT
ZZT (Note 1)
-55° to +100°
VOLTAGE
TEMPERATURE
STABILITY
3
VZT (Note 2)
OHMS
15
15
15
15
15
mV
96
48
19
9
5
% / °C
0.01
0.005
0.002
0.001
0.0005
NOTE:
1. Zener impedance is derived by superimposing on IZT A 60Hz rms a.c. current equal to 10%
of IZT.
2. The maximum allowable change observed over the entire temperature range i.e., the diode
voltage will not exceed the specified mV at any discrete temperature between the
established limits, per JEDEC standard No.5
LDS-0071 Rev. 2 (101557)
Page 1 of 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Symbol
A
B
C
D
E
F
G
H
J
K
L
M
N
Dimensions
Inches
Millimeters
Min
Max Min Max
.0280 .0320 .711 .813
.0080 .0100 .203 .254
.0104 .0106 .264 .269
.0019 .0021 .048 .053
.0054 .0056 .137 .142
.0020 .0040 .050 .102
.0280 .0320 .711 .813
.0030 .0050 .076 .127
.0030 .0050 .076 .127
.0209 .0211 .531 .536
.0080 .0100 .203 .254
.0104 .0106 .264 .269
.0059 .0061 .150 .155
Backside must be electrically isolated to ensure proper performance.
DESIGN DATA
Metallization:
Top: 1 (Cathode)
2 (Anode)
3 (Test pad)
Al
Al
Al
Back:
Au
Al thickness
Gold thickness
Chip thickness
Circuit layout data:
For zener operation, cathode must be operated positive with respect to anode.
Test pad is for wire bond evaluation only. No electrical contact is made with test pad.
25,000Å minimum.
4,000Å minimum.
.010 inch (0.25 mm) ±0.002 inch (+0.05 mm).
NOTES:
1. Dimensions are in inches unless otherwise indicated.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
JANHC and JANKC (A-version) die dimensions.
LDS-0071 Rev. 2 (101557)
Page 2 of 2