I2P AK BYV32G-200 Dual ultrafast power diode Rev. 01 — 11 January 2011 Product data sheet 1. Product profile 1.1 General description Dual ultrafast power diode in a SOT226A (I2PAK) low-profile plastic package. 1.2 Features and benefits High thermal cycling performance Soft recovery characteristic minimizes power consuming oscillations Low thermal resistance Very low on-state loss High reverse voltage surge capability 1.3 Applications Output rectifiers in high-frequency switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VRRM repetitive peak reverse voltage IO(AV) average output current IFSM Conditions Min Typ Max Unit - - 200 V square-wave pulse; δ = 0.5 ; Tmb ≤ 115 °C; both diodes conducting; see Figure 1; see Figure 2 - - 20 A non-repetitive peak forward current Tj(init) = 25 °C; tp = 10 ms; sine-wave pulse; per diode - - 125 A IRRM repetitive peak reverse current tp = 2 µs; δ = 0.001 - - 0.2 A VESD electrostatic discharge voltage HBM; C = 250 pF; R = 1.5 kΩ; all pins - - 8 kV IF = 8 A; Tj = 150 °C; see Figure 4 - 0.72 0.85 V Static characteristics VF forward voltage BYV32G-200 NXP Semiconductors Dual ultrafast power diode Table 1. Symbol Quick reference data …continued Parameter Conditions Min Typ Max Unit IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; ramp recovery; see Figure 5 - 20 25 ns IR = 1 A; IF = 0.5 A; Tj = 25 °C; step recovery; measured at reverse current = 0.25 A; see Figure 6 - 10 20 ns Dynamic characteristics trr reverse recovery time 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 A1 anode 1 2 K cathode Simplified outline Graphic symbol A1 3 A2 anode 2 mb K mounting base; connected to cathode A2 K sym125 1 2 3 SOT226A (I2PAK) 3. Ordering information Table 3. Ordering information Type number BYV32G-200 BYV32G-200 Product data sheet Package Name Description Version I2PAK plastic single-ended package (I2PAK); TO-262 SOT226A All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 January 2011 © NXP B.V. 2011. All rights reserved. 2 of 11 BYV32G-200 NXP Semiconductors Dual ultrafast power diode 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM Conditions Min Max Unit repetitive peak reverse voltage - 200 V VRWM crest working reverse voltage - 200 V VR reverse voltage DC - 200 V IO(AV) average output current square-wave pulse; δ = 0.5 ; Tmb ≤ 115 °C; both diodes conducting; see Figure 1; see Figure 2 - 20 A IFRM repetitive peak forward current δ = 0.5 ; tp = 25 µs; Tmb ≤ 115 °C; per diode - 20 A IFSM non-repetitive peak forward current tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C; per diode - 137 A tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C; per diode - 125 A IRRM repetitive peak reverse current δ = 0.001 ; tp = 2 µs - 0.2 A IRSM non-repetitive peak reverse current tp = 100 µs - 0.2 A Tstg storage temperature -40 150 °C Tj junction temperature - 150 °C VESD electrostatic discharge voltage - 8 kV HBM; C = 250 pF; R = 1.5 kΩ; all pins 003aac978 12 δ=1 a = 1.57 Ptot (W) 003aac979 15 Ptot (W) 1.9 0.5 2.2 8 10 2.8 0.2 4.0 0.1 4 5 0 0 0 4 8 12 0 IF(AV) (A) Fig 1. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values BYV32G-200 Product data sheet Fig 2. 5 10 IF(AV) (A) 15 Forward power dissipation as a function of average forward current; square waveform; maximum values All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 January 2011 © NXP B.V. 2011. All rights reserved. 3 of 11 BYV32G-200 NXP Semiconductors Dual ultrafast power diode 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base with heatsink compound; both diodes conducting - - 1.6 K/W with heatsink compound; per diode; see Figure 3 - - 2.4 K/W - 60 - K/W Rth(j-a) thermal resistance from junction to ambient 003aac980 10 Zth(j-mb) (K/W) 1 10−1 δ= P tp T 10−2 t tp 10−3 10−6 Fig 3. T 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse width BYV32G-200 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 January 2011 © NXP B.V. 2011. All rights reserved. 4 of 11 BYV32G-200 NXP Semiconductors Dual ultrafast power diode 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit - 1 1.15 V Static characteristics VF forward voltage IF = 20 A; Tj = 25 °C IF = 8 A; Tj = 150 °C; see Figure 4 - 0.72 0.85 V IR reverse current VR = 200 V; Tj = 100 °C - 0.2 0.6 mA VR = 200 V; Tj = 25 °C - 6 30 µA Dynamic characteristics Qr recovered charge IF = 2 A; VR = 30 V; dIF/dt = 20 A/µs; Tj = 25 °C - 8 12.5 nC trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; ramp recovery; Tj = 25 °C; see Figure 5 - 20 25 ns IF = 0.5 A; IR = 1 A; step recovery; measured at reverse current = 0.25 A; Tj = 25 °C; see Figure 6 - 10 20 ns IF = 1 A; dIF/dt = 10 A/µs; Tj = 25 °C; see Figure 7 - - 1 V forward recovery voltage VFR 003aac981 32 dlF IF dt IF (A) 24 trr (1) 16 (2) time (3) 25 % Qr 100 % 8 IRM IR 003aac562 0 0 0.4 0.8 1.2 1.6 VF (V) Fig 4. Forward current as a function of forward voltage BYV32G-200 Product data sheet Fig 5. Reverse recovery definitions; ramp recovery All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 January 2011 © NXP B.V. 2011. All rights reserved. 5 of 11 BYV32G-200 NXP Semiconductors Dual ultrafast power diode IF IF IF trr time time 0.25 x IR VF Qr VFRM IR IR VF 003aac563 time 001aab912 Fig 6. Reverse recovery definitions; step recovery BYV32G-200 Product data sheet Fig 7. Forward recovery definitions All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 January 2011 © NXP B.V. 2011. All rights reserved. 6 of 11 BYV32G-200 NXP Semiconductors Dual ultrafast power diode 7. Package outline Plastic single-ended package (I2PAK); low-profile 3-lead TO-262 SOT226A A A1 E D1 D L1 b1 Q b2 L 1 2 3 c b e e 0 5 Dimensions Unit mm max nom min 10 mm scale A A1 b b1 b2 c D D1 E e 4.7 1.40 0.95 1.40 1.7 0.65 9.4 1.32 10.30 4.3 1.15 0.70 1.14 1.3 0.45 8.6 1.02 9.65 2.54 (REF) L 15.0 12.5 L1 3.0 (REF) Q 2.6 2.2 sot226a_po Outline version SOT226A Fig 8. References IEC JEDEC JEITA European projection Issue date 09-08-17 09-08-25 TO-262 Package outline SOT226A (I2PAK) BYV32G-200 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 January 2011 © NXP B.V. 2011. All rights reserved. 7 of 11 BYV32G-200 NXP Semiconductors Dual ultrafast power diode 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BYV32G-200 v.1 20110111 Product data sheet - - BYV32G-200 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 January 2011 © NXP B.V. 2011. All rights reserved. 8 of 11 BYV32G-200 NXP Semiconductors Dual ultrafast power diode 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BYV32G-200 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 11 January 2011 © NXP B.V. 2011. All rights reserved. 10 of 11 BYV32G-200 NXP Semiconductors Dual ultrafast power diode 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Contact information. . . . . . . . . . . . . . . . . . . . . .10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 11 January 2011 Document identifier: BYV32G-200