BLF178XR; BLF178XRS Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Table 1. Application information Test signal f VDS PL Gp D (MHz) (V) (W) (dB) (%) CW 108 50 1200 23 80 pulsed RF 108 50 1400 28 72 1.2 Features and benefits Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with of 20 %: Output power = 1400 W Power gain = 28 dB Efficiency = 72 % Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 128 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Industrial, scientific and medical applications Broadcast transmitter applications BLF178XR; BLF178XRS NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF178XR (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 2 1 5 3 3 4 5 4 [1] source 2 sym117 BLF178XRS (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source 1 2 1 5 3 3 4 5 4 [1] 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF178XR - flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A BLF178XRS - earless flanged balanced LDMOST ceramic package; 4 leads SOT539B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). BLF178XR_BLF178XRS Product data sheet Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 110 V VGS gate-source voltage 6 +11 V Tstg storage temperature 65 +150 C Tj junction temperature - 200 C All information provided in this document is subject to legal disclaimers. Rev. 4 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 2 of 14 BLF178XR; BLF178XRS NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Tj = 150 C [1][2] Rth(j-c) thermal resistance from junction to case Zth(j-c) transient thermal impedance from junction Tj = 150 C; tp = 100 s; to case = 20 % [1] Tj is the junction temperature. [2] Rth(j-c) is measured under RF conditions. [3] See Figure 1. [3] Typ Unit 0.11 K/W 0.033 K/W DDD =WKMF M .: WSV (1) = 1 % (2) = 2 % (3) = 5 % (4) = 10 % (5) = 20 % (6) = 50 % (7) = 100 % (DC) Fig 1. BLF178XR_BLF178XRS Product data sheet Transient thermal impedance from junction to case as a function of pulse duration All information provided in this document is subject to legal disclaimers. Rev. 4 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 3 of 14 BLF178XR; BLF178XRS NXP Semiconductors Power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 5.5 mA 110 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 550 mA 1.25 1.7 2.25 V VGSq gate-source quiescent voltage VDS = 50 V; ID = 20 mA 0.8 1.3 1.8 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 77 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 19.25 A - 0.07 - Table 7. AC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Crs feedback capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 5.5 - pF Ciss input capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 414 - pF Coss output capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 184 - pF Table 8. RF characteristics Test signal: pulsed RF; tp = 100 s; = 20 %; f = 108 MHz; RF performance at VDS = 50 V; IDq = 40 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. BLF178XR_BLF178XRS Product data sheet Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL = 1400 W 27 28 - dB RLin input return loss PL = 1400 W - 15 11 dB D drain efficiency PL = 1400 W 68 72 - % All information provided in this document is subject to legal disclaimers. Rev. 4 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 4 of 14 BLF178XR; BLF178XRS NXP Semiconductors Power LDMOS transistor DDD &RVV S) 9'69 VGS = 0 V; f = 1 MHz. Fig 2. Output capacitance as a function of drain-source voltage; typical values per section 7. Test information 7.1 Ruggedness in class-AB operation The BLF178XR and BLF178XRS are capable of withstanding a load mismatch corresponding to VSWR > 65 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 40 mA; PL = 1400 W pulsed; f = 108 MHz. 7.2 Impedance information drain 1 gate 1 Zi ZL gate 2 drain 2 001aan207 Fig 3. Definition of transistor impedance Table 9. Typical push-pull impedance Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL = 1400 W. BLF178XR_BLF178XRS Product data sheet f Zi ZL (MHz) () () 108 2.35 j6.06 2.78 + j0.48 All information provided in this document is subject to legal disclaimers. Rev. 4 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 5 of 14 BLF178XR; BLF178XRS NXP Semiconductors Power LDMOS transistor 7.3 Test circuit 7 & & 9JV 5 & / & & & & / & & / & & 9GV / & & / & 5 / 9JV & / & / & & & & 9GV & 7 PP DDD PP PP PP Printed-Circuit Board (PCB): RF 35; r = 3.5; thickness = 0.765 mm; thickness copper plating = 35 m. See Table 10 for a list of components. Fig 4. Component layout for class-AB production test circuit Table 10. List of components For test circuit see Figure 4. Component Product data sheet Value Remarks C1, C2, C5, C6, C14, C15, C21, C22 multilayer ceramic chip capacitor 1 nF [1] C3 multilayer ceramic chip capacitor 82 pF [1] C4 multilayer ceramic chip capacitor 240 pF [1] C7, C8 multilayer ceramic chip capacitor 4.7 F; 50 V C10, C11 electrolytic capacitor 2200 F; 63 V C12, C13 multilayer ceramic chip capacitor 4.7 F; 100 V C16, C17 multilayer ceramic chip capacitor 120 pF [1] C18 multilayer ceramic chip capacitor 82 pF [1] C19 multilayer ceramic chip capacitor 110 pF [1] C20 multilayer ceramic chip capacitor 56 pF [1] L1, L2, L3, L4 1.5 turn 0.8 mm copper wire D = 3 mm; length = 2 mm L5, L6 5 turn 0.8 mm copper wire D = 3 mm; length = 4.5 mm L7, L8 2.5 turn 0.8 mm copper wire D = 3 mm; length = 3 mm R3, R4 SMD resistor 9.1 1206 T1 semi rigid coax 25 ; 160 mm UT-090C-25 T2 semi rigid coax 25 ; 160 mm UT-141C-25 [1] BLF178XR_BLF178XRS Description American Technical Ceramics type 800B or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 4 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 6 of 14 BLF178XR; BLF178XRS NXP Semiconductors Power LDMOS transistor 7.4 Graphical data The following figures are measured in a class-AB production test circuit. 7.4.1 1-Tone CW pulsed DDD Ș' DDD *S G% 3/ G%P *S Ș' OGHDO3/ 3/ 3/: 3LG%P VDS = 50 V; IDq = 40 mA; f = 108 MHz; tp = 100 s; = 20 %. VDS = 50 V; IDq = 40 mA; f = 108 MHz; tp = 100 s; = 20 %. (1) PL(1dB) = 61.3 dBm (1350 W) (2) PL(3dB) = 61.9 dBm (1550 W) Fig 5. Power gain and drain efficiency as function of output power; typical values BLF178XR_BLF178XRS Product data sheet Fig 6. Output power as a function of input power; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 7 of 14 BLF178XR; BLF178XRS NXP Semiconductors Power LDMOS transistor DDD DDD *S G% Ș' 3/: VDS = 50 V; f = 108 MHz; tp = 100 s; = 20 %. (1) IDq = 20 mA (2) IDq = 40 mA (2) IDq = 40 mA (3) IDq = 80 mA (3) IDq = 80 mA (4) IDq = 160 mA (4) IDq = 160 mA Power gain as a function of output power; typical values Fig 8. DDD 3/: Drain efficiency as a function of output power; typical values DDD *S G% VDS = 50 V; f = 108 MHz; tp = 100 s; = 20 %. (1) IDq = 20 mA Fig 7. Ș' 3/: IDq = 40 mA; f = 108 MHz; tp = 100 s; = 20 %. (1) VDS = 20 V (2) VDS = 25 V (2) VDS = 25 V (3) VDS = 30 V (3) VDS = 30 V (4) VDS = 35 V (4) VDS = 35 V (5) VDS = 40 V (5) VDS = 40 V (6) VDS = 45 V (6) VDS = 45 V (7) VDS = 50 V (7) VDS = 50 V Power gain as a function of output power; typical values BLF178XR_BLF178XRS Product data sheet 3/: IDq = 40 mA; f = 108 MHz; tp = 100 s; = 20 %. (1) VDS = 20 V Fig 9. Fig 10. Drain efficiency as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 8 of 14 BLF178XR; BLF178XRS NXP Semiconductors Power LDMOS transistor 8. Package outline Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A mm 4.7 4.2 inches b c D D1 e E E1 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 p Q q 3.30 3.05 2.26 2.01 35.56 U1 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 0.185 0.465 0.007 1.242 1.241 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 0.165 0.455 0.004 1.218 1.219 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 10-02-02 12-05-02 SOT539A Fig 11. Package outline SOT539A BLF178XR_BLF178XRS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 9 of 14 BLF178XR; BLF178XRS NXP Semiconductors Power LDMOS transistor Earless flanged balanced ceramic package; 4 leads SOT539B D A F 5 D1 D U1 H1 w2 1 c D 2 E1 U2 H E L 3 4 w3 b Q e 0 5 10 mm scale Dimensions Unit(1) w2 w3 0.25 0.25 max 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.089 1.275 0.405 0.54 inches nom 0.01 min 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.079 1.265 0.395 0.01 mm max nom min A b E E1 4.7 11.81 0.18 31.55 31.52 c D D1 9.5 9.53 e 4.2 11.56 0.10 30.94 30.96 9.3 9.27 F H H1 L Q U1 U2 1.75 17.12 25.53 3.48 2.26 32.39 10.29 1.50 16.10 25.27 2.97 2.01 32.13 10.03 13.72 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version References IEC JEDEC JEITA sot539b_po European projection Issue date 12-05-02 13-05-24 SOT539B Fig 12. Package outline SOT539B BLF178XR_BLF178XRS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 10 of 14 BLF178XR; BLF178XRS NXP Semiconductors Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 11. Abbreviations Acronym Description CW Continuous Wave ESD ElectroStatic Discharge HF High Frequency LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio 11. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF178XR_BLF178XRS v.4 20130712 Product data sheet - BLF178XR_BLF178XRS v.3 Modifications: BLF178XR_BLF178XRS v.3 Modifications: • The package outline Figure 12 is updated. 20120625 • Product data sheet - BLF178XR_BLF178XRS v.2 The status of this document has been changed to Product data sheet. BLF178XR_BLF178XRS v.2 20120515 Preliminary data sheet - BLF178XR_BLF178XRS v.1 BLF178XR_BLF178XRS v.1 20120130 Objective data sheet - BLF178XR_BLF178XRS Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 4 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 11 of 14 BLF178XR; BLF178XRS NXP Semiconductors Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. 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This document supersedes and replaces all information supplied prior to the publication hereof. BLF178XR_BLF178XRS Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 4 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 12 of 14 BLF178XR; BLF178XRS NXP Semiconductors Power LDMOS transistor Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF178XR_BLF178XRS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 12 July 2013 © NXP B.V. 2013. All rights reserved. 13 of 14 NXP Semiconductors BLF178XR; BLF178XRS Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.4.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 Ruggedness in class-AB operation . . . . . . . . . 5 Impedance information . . . . . . . . . . . . . . . . . . . 5 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7 1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Handling information. . . . . . . . . . . . . . . . . . . . 11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2013. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 12 July 2013 Document identifier: BLF178XR_BLF178XRS