DISCRETE SEMICONDUCTORS DATA SHEET BT258S-800R Thyristors logic level Product specification October 2002 NXP Semiconductors Product specification Thyristors logic level BT258S-800R GENERAL DESCRIPTION Passivated, sensitive gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. PINNING - SOT428 QUICK REFERENCE DATA SYMBOL PARAMETER MAX. UNIT VDRM, VRRM IT(AV) IT(RMS) ITSM Repetitive peak off-state voltages 800 V Average on-state current RMS on-state current Non-repetitive peak on-state current 5 8 75 A A A PIN CONFIGURATION PIN NUMBER SYMBOL tab 1 cathode 2 anode 3 gate tab anode a k 2 1 g 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM 2 It dIT/dt IGM VRGM PGM PG(AV) Tstg Tj Average on-state current RMS on-state current Non-repetitive peak on-state current 2 half sine wave; Tmb ≤ 111 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/µs I t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature MIN. MAX. UNIT - 800 V - 5 8 A A - 75 82 28 50 A A A2s A/µs -40 - 2 5 5 0.5 150 1251 A V W W ˚C ˚C 1 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less. October 2002 1 Rev 2.000 NXP Semiconductors Product specification Thyristors logic level BT258S-800R THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-mb Thermal resistance junction to mounting base pcb (FR4) mounted; footprint as in Fig.14 Thermal resistance junction to ambient - - 2.0 K/W - 75 - K/W MIN. TYP. MAX. UNIT 0.1 - 50 0.4 0.3 1.3 0.4 0.2 0.1 200 10 6 1.6 1.5 0.5 µA mA mA V V V mA MIN. TYP. MAX. UNIT 50 100 - V/µs - 2 - µs - 100 - µs Rth j-a STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS IGT IL IH VT VGT Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage ID, IR Off-state leakage current VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 16 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 110 ˚C VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS dVD/dt Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; RGK = 100 Ω ITM = 10 A; VD = VDRM(max); IG = 5 mA; dIG/dt = 0.2 A/µs VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 12 A; VR = 24 V; dITM/dt = 10 A/µs; dVD/dt = 2 V/µs; RGK = 1 kΩ tgt tq October 2002 2 Rev 2.000 NXP Semiconductors Product specification Thyristors logic level BT258S-800R Ptot (W) Tmb(max) (˚C) 109 a = 1.57 111 8 conduction angle degrees 30 60 90 120 180 6 form factor (a) 1.9 4 2.8 2.2 1.9 1.57 2.2 2.8 4 4 2 0 0 4 2 IT(AV) (A) I TSM 70 IT 113 60 115 50 time T Tj initial = 25 C max 117 40 119 30 121 20 123 10 125 0 6 Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV). 1000 ITSM / A 80 1 10 100 Number of half cycles at 50Hz 1000 Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. ITSM / A 24 IT(RMS) / A 20 16 dI T/dt limit 100 12 I TSM IT 8 time T 4 Tj initial = 25 C max 10 10us 100us 0 0.01 10ms 1ms 0.1 1 surge duration / s T/s Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 10ms. 9 IT(RMS) / A Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 111˚C. BT258 1.6 111 C 8 10 VGT(Tj) VGT(25 C) 1.4 7 6 1.2 5 4 1 3 0.8 2 0.6 1 0 -50 0 50 Tmb / C 100 0.4 -50 150 Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. October 2002 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 3 Rev 2.000 NXP Semiconductors Product specification Thyristors logic level 3 BT258S-800R IGT(Tj) IGT(25 C) I /A 30 T Tj = 125 °C Tj = 25 °C 2.5 20 2 1.5 typ 10 1 max Vo = 1 V Rs = 0.04 Ω 0.5 0 -50 0 0 50 Tj / C 100 150 3 0.5 1 VT / V 1.5 2 Fig.10. Typical and maximum on-state characteristic. Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. IL(Tj) IL(25 C) 0 10 BT150 Zth j-mb (K/W) 2.5 1 2 1.5 0.1 1 P D t p t 0.5 0 -50 0 50 Tj / C 100 0.01 10us 150 1ms 10ms 0.1s 1s 10s tp / s Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. 3 0.1ms Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. IH(Tj) IH(25 C) 1000 dVD/dt (V/us) RGK = 100 ohms 2.5 100 2 1.5 10 1 0.5 0 -50 0 50 Tj / C 100 1 150 50 100 150 Tj / C Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. October 2002 0 Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. 4 Rev 2.000 NXP Semiconductors Product specification Thyristors logic level BT258S-800R MECHANICAL DATA Dimensions in mm seating plane Net Mass: 1.1 g 6.73 max 1.1 tab 2.38 max 0.93 max 5.4 4 min 6.22 max 10.4 max 4.6 2 1 0.5 0.5 min 3 0.3 0.5 0.8 max (x2) 2.285 (x2) Fig.13. SOT428 : centre pin connected to tab. MOUNTING INSTRUCTIONS Dimensions in mm 7.0 7.0 2.15 1.5 2.5 4.57 Fig.14. SOT428 : minimum pad sizes for surface mounting. Notes 1. Plastic meets UL94 V0 at 1/8". October 2002 5 Rev 2.000 NXP Semiconductors Legal information DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. 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