INTEGRATED CIRCUITS DATA SHEET UBA2030T Full bridge driver IC Preliminary specification Supersedes data of 1997 Sep 16 File under Integrated Circuits, IC11 1999 Aug 10 Philips Semiconductors Preliminary specification Full bridge driver IC UBA2030T FEATURES GENERAL DESCRIPTION • Full bridge driver The UBA2030T is a high voltage integrated circuit fabricated using the BCD750 power logic process. The circuit is designed for driving the MOSFETs in a full bridge configuration. In addition, it features a shut-down function, an adjustable oscillator and a PMOS high voltage level shifter to control the bridge enable function. To guarantee an accurate 50% duty factor, the oscillator signal passes through a divider before being fed to the output drivers. • Integrated bootstrap diodes • Integrated high voltage level shift function • High voltage input (570 V maximum) for the internal supply • Adjustable ‘dead time’ • Adjustable oscillator frequency • High voltage level shifter for the bridge enable function • Shut-down function. APPLICATIONS • The UBA2030T can drive the MOSFETs in any type of load configured as a full bridge • The circuit is intended as a commutator for High Intensity Discharge (HID) lamps. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME UBA2030T 1999 Aug 10 SO24 DESCRIPTION plastic small outline package; 24 leads; body width 7.5 mm 2 VERSION SOT137-1 Philips Semiconductors Preliminary specification Full bridge driver IC UBA2030T QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT High voltage VHV high voltage supply 0 − 570 V − 0.7 1.0 mA 14.0 15.5 17.0 V 11.5 13.0 14.5 V Start-up; powered via pin HV Istrtu start-up current Vth(osc strt) start oscillating threshold voltage at fbridge = 500 Hz; no load Vth(osc stp) stop oscillating threshold voltage Output drivers Io(source) output source current VDD = VFSL = VFSR = 15 V; VGHR = VGHL = VGLR = VGLL = 0 V 140 190 240 mA Io(sink) output sink current 200 VDD = VFSL = VFSR = 15 V; VGHR = VGHL = VGLR = VGLL = 15 V 260 320 mA EXO pin connected to SGND 50 − 50000 Hz RC pin connected to SGND; f osc(ext) f bridge = ----------------2 100 − 100000 Hz 0.4 − 4 µs Internal oscillator fbridge bridge oscillating frequency External oscillator fosc(ext) external oscillator frequency Dead time control tdead dead time control range (adjusted externally) Bridge enable IIH HIGH-level input current bridge enable active 100 − 700 µA IIL LOW-level input current bridge enable not active 0 − 20 µA Shut-down VIH HIGH-level input voltage ∆V SD shut-down active; ------------- > 5 V/ms ∆t 4.5 − VDD V VIL LOW-level input voltage shut-down not active; ∆V SD -------------- > 5 V/ms ∆t 0 − 0.5 V 1999 Aug 10 3 Philips Semiconductors Preliminary specification Full bridge driver IC UBA2030T BLOCK DIAGRAM handbook, full pagewidth HV 18 BER BE 8 7 10 HIGHER LEFT DRIVER 11 12 15 BRIDGE ENABLE HIGHER RIGHT DRIVER HIGH VOLTAGE LEVEL SHIFTER 14 13 OSCILLATOR UBA2030T LOWER LEFT DRIVER ÷2 LOW VOLTAGE SUPPLY 24 2 5 20 22 LOWER RIGHT DRIVER LOW VOLTAGE LEVEL SHIFTER LOGIC 23 3 1 4, 6, 9, 16, 17, 19 21 MGK590 SGND VDD RC EXO DTC n.c. SD Fig.1 Block diagram. 1999 Aug 10 4 FSL GHL SHL FSR GHR SHR GLL PGND GLR Philips Semiconductors Preliminary specification Full bridge driver IC UBA2030T PINNING SYMBOL PIN DESCRIPTION GLR 1 gate of lower right MOSFET PGND 2 power ground for sources of lower left and right MOSFETs GLL 3 gate of lower left MOSFET n.c. 4 not connected RC 5 RC input for internal oscillator n.c. 6 not connected BE 7 bridge enable control input BER 8 n.c. handbook, halfpage GLR 1 24 SGND PGND 2 23 VDD GLL 3 22 DTC bridge enable reference input n.c. 4 21 SD 9 not connected RC 5 20 EXO FSL 10 floating supply voltage left output n.c. 6 GHL 11 gate of higher left MOSFET SHL 12 source of higher left MOSFET SHR 13 source of higher right MOSFET GHR 14 gate of higher right MOSFET FSR 15 floating supply voltage right output n.c. 16 n.c. 19 n.c. UBA2030T BE 7 18 HV BER 8 17 n.c. n.c. 9 16 n.c. FSL 10 15 FSR not connected GHL 11 14 GHR 17 not connected SHL 12 13 SHR HV 18 high voltage supply input n.c. 19 not connected EXO 20 external oscillator input SD 21 shut-down input DTC 22 ‘dead time’ control input VDD 23 internal (low voltage) supply SGND 24 signal ground 1999 Aug 10 MGK589 Fig.2 Pin configuration. 5 Philips Semiconductors Preliminary specification Full bridge driver IC UBA2030T When an external oscillator is used, its output must be connected to the EXO pin; the internal oscillator must be disabled by connecting the RC pin to SGND. The bridge commutating frequency is half the oscillator frequency due to a ÷2 circuit which guarantees an accurate 50% duty factor. FUNCTIONAL DESCRIPTION Supply voltage The UBA2030T is powered by a single supply voltage connected to the HV pin (the full bridge supply could be used, for example). The IC generates its own low voltage supply for driving the internal circuitry and the MOSFETs in the full bridge, removing the need for an additional low voltage supply. A capacitor must be connected between the VDD pin and SGND to obtain a ripple-free internal supply voltage. The time between turning off the conducting pair of MOSFETs and turning on the other pair, the ‘dead time’, can be adjusted using an external resistor. If the supply voltage at the HV pin falls below the ‘stop oscillating threshold’, the UBA2030T re-enters the start-up phase. Start-up Bridge enable When the power is turned on, the UBA2030T enters a start-up phase; the high side MOSFETs are switched off and the low side MOSFETs switched on. During start-up, the bootstrap capacitors are charged and the bridge output current is zero. The bridge enable function allows the bridge to be held in its current state. When active, it connects the RC pin to SGND, disabling the internal oscillator. If the bridge enable function is activated during ‘dead time’, the bridge is allowed to enter the next conducting state before being held. Oscillations resume the instant the bridge enable function is turned off. A timing diagram is shown in Fig.3. Oscillation At the point where the supply voltage at the HV pin crosses the ‘start oscillating threshold’, the bridge begins commutating between the following two defined states: To hold the bridge, an external control circuit is required to provide a source current to the bridge enable control input (pin BE), and to supply a reference voltage to pin BER, (see Fig.6). Higher left and lower right MOSFETs on, higher right and lower left MOSFETs off Shut-down Higher left and lower right MOSFETs off, higher right and lower left MOSFETs on. The active HIGH shut-down input (pin SD) can be used at any time to turn off all four MOSFETs. However, if the supply voltage drops below the ‘stop oscillating threshold’, the bridge re-enters the start-up phase even if the shut-down function is active. When the internal oscillator is used, the bridge commutating frequency is determined by the values of an external resistor and capacitor. In this mode, the EXO pin must be connected to SGND. 1999 Aug 10 6 Philips Semiconductors Preliminary specification Full bridge driver IC handbook, full pagewidth UBA2030T on VBE off VRC VGHL VGLR VGHR VGLL time MGK594 dead time Fig.3 Timing diagram. 1999 Aug 10 7 Philips Semiconductors Preliminary specification Full bridge driver IC UBA2030T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER VDD supply voltage (low voltage) VHV supply voltage (high voltage) CONDITIONS VFSL; VFSR floating supply voltage VSHL; VSHR source voltage for higher right and left MOSFETs VPGND power ground voltage Vi(BER) bridge enable reference input voltage Vi(BE) bridge enable control input voltage MIN. MAX. UNIT 0 18 V note 1 0 570 V VSHL = VSHR = 570 V, note 1 570 588 V VSHL = VSHR = 0 V 0 18 V with reference to PGND and SGND −10 +570 V with reference to SGND −7 +10 V 0 570 V Vi(BER) = 570 V 570 580 V Vi(BER) = 0 V 0 10 V Ii(BE) bridge enable control input current 0 700 µA Vi(EXO) input voltage from external oscillator on pin EXO 0 VDD V VSD shut-down input voltage on pin SD 0 VDD V SR slew rate at output pins −4 +4 V/ns Tj junction temperature −40 +150 °C Tamb ambient temperature −40 +150 °C Tstg storage temperature −55 +150 °C Ves electrostatic handling pin HV − ±1250 V pins BE, BER, FSL, GHL, SHL, SHR, GHR and FSR − ±1500 V repetitive note 2 Notes 1. This value is guaranteed down to Tj = −25 °C. From Tj = −25 to −40 °C, the voltage on pin HV is limited to 530 V and the floating supply voltage (VFSL, VFSR) is limited to a maximum value of 548 V. 2. In accordance with the human body model: equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient VALUE UNIT 70 K/W QUALITY SPECIFICATION In accordance with “SNW-FQ-611 part E”. The numbers of the quality specification can be found in the “Quality Reference Handbook”. 1999 Aug 10 8 Philips Semiconductors Preliminary specification Full bridge driver IC UBA2030T CHARACTERISTICS Tj = 25 °C; all voltages with respect to PGND; positive currents flow into the IC. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT High voltage VHV high voltage supply IL leakage current VPGND(float); VSGND(float) floating ground voltage with HV = 570 V applied to pins BER, SHR and SHL 0 − 570 V − − 5 µA 0 − 5 V Start-up, powered via the HV pin; note 1 Istrtu start-up current − 0.7 1.0 mA Vstrtu start-up voltage high left and right MOSFETs off; low − left and right MOSFETs on 6 − V Vth(osc strt) start oscillating threshold voltage fbridge = 500 Hz; no load 14.0 15.5 17.0 V Vth(osc stp) stop oscillating threshold voltage 11.5 13.0 14.5 V Vhys hysteresis voltage 2.0 2.5 3.0 V IHV supply current fbridge = 500 Hz; no load; VHV = 50 V 0.3 0.5 0.7 mA VDD internal supply voltage (low voltage) fbridge = 500 Hz; no load; VHV = 50 V 14.0 15.3 16.5 V fbridge = 500 Hz; no load; at start oscillating threshold 10.5 11 11.5 V fbridge = 500 Hz; no load; at stop oscillating threshold 8.0 8.5 9.0 V between oscillation start and stop levels Output drivers Vo(GHL,GHR) output voltage on pins GHL at power-up; no load; VHV = 50 V; and GHR for gates of higher fbridge = 500 Hz; right and left MOSFETs 13.2 14.5 16.5 V Vo(GLL,GLR) output voltage on pins GLL and GLR for gates of lower right and left MOSFETs 14.0 15.3 16.5 V ∆t time difference between diagonally placed output drivers 0 − 100 ns RonH higher MOSFETs on resistance VFSR = VFSL = 15 V; Isource = 50 mA 33 39 46 Ω RoffH higher MOSFETs off resistance VFSR = VFSL = 15 V; Isink = 50 mA 11 14 17 Ω RonL lower MOSFETs on resistance VDD = 15 V; Isource = 50 mA 33 39 46 Ω RoffL lower MOSFETs off resistance VDD = 15 V; Isink = 50 mA 11 14 17 Ω Vdiode bootstrap diode voltage drop Idiode = 1 mA 0.8 1.0 1.2 V 1999 Aug 10 9 Philips Semiconductors Preliminary specification Full bridge driver IC SYMBOL PARAMETER UBA2030T CONDITIONS MIN. TYP. MAX. UNIT Io(source) output source current VDD = VFSL = VFSR = 15 V; VGHR = VGHL = VGLR = VGLL = 0 V 140 190 240 mA Io(sink) output sink current VDD = VFSL = VFSR = 15 V; VGHR = VGHL = VGLR = VGLL = 15 V 200 260 320 mA IFSL(float); IFSR(float) floating supply current VFSR = VFSL = 15 V − 15 − µA Internal oscillator; notes 2 and 3 fbridge bridge oscillating frequency EXO pin connected to SGND 50 − 50000 Hz ∆fosc/∆T oscillator frequency dependency with respect to temperature fixed RC; ∆T = −40 °C to +150 °C 0 − 10 % ∆fosc/∆VDD oscillator frequency dependency with respect to VDD fixed RC; ∆VDD = 12 to 16 V 0 − 10 % kH HIGH-level trip point VRCH = kH × VDD 0.67 0.71 0.75 kL LOW-level trip point VRCL = kL × VDD − 0.01 − kosc oscillator constant 1 f bridge = -------------------------------------------------( k osc × R osc × C osc ) 2.34 2.49 2.64 fosc(ext) external oscillator frequency RC pin connected to SGND; f osc(ext) f bridge = ----------------2 100 − 100000 Hz VIH HIGH-level input voltage ∆V EXO ----------------- > 5 V/ms ∆t 4.5 − VDD V VIL LOW-level input voltage ∆V EXO ----------------- > 5 V/ms ∆t 0 − 0.5 V Ii(EXO) input current 0 − 50 µA 0.4 − 4 µs RDT = kDT × tdead − 70 kΩ 180 270 380 kΩ/µs bridge enable active 100 − 700 µA VBE − VBER = 5 V − 1.1 − mA 0 − 20 µA with reference to HV 2.1 2.6 3.0 V with reference to PGND 3.5 5.5 7.5 V External oscillator; note 2 Dead time control; notes 2 and 4 tdead dead time control range (adjusted externally) kDT dead time variable Bridge enable; notes 2 and 5 IIH HIGH-level input current; note 6 IIL LOW-level input current bridge enable not active VBE − VBER threshold voltage IIH = 100 µA 1999 Aug 10 10 Philips Semiconductors Preliminary specification Full bridge driver IC SYMBOL UBA2030T PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Shut-down; note 2 VIH HIGH-level input voltage ∆V SD shut-down active; ------------- > 5 V/ms ∆t 4.5 − VDD V VIL LOW-level input voltage shut-down not active; ∆V SD -------------- > 5 V/ms ∆t 0 − 0.5 V Ii(SD) input current 0 − 50 µA Notes 1. The current into pin HV is internally limited to 15 mA at Tj = 25 °C and to 10 mA at Tj = 150 °C. 2. VDD = 15 V. 3. The bridge frequency can be calculated using Equation (1). 4. The ‘dead time’ is adjusted using an external resistor; see Equation (2). 5. This function is disabled when using an external oscillator. 6. IIH < 2.1 mA when the condition is VBE − VBER = 5 V at Tj = 150 °C. DEAD TIME R DT = 270 × t dead – 70 Design equations BRIDGE COMMUTATION FREQUENCY The internal ÷2 circuit requires the frequency of the internal or external oscillator to be twice the bridge frequency. When the internal oscillator is used, the bridge frequency can be adjusted using an external resistor and capacitor: 1 f bridge = -------------------------------------------2.8 × R osc × C osc (1) The ‘dead time’ (tdead) can be adjusted using an external resistor (RDT) connected between DTC and SGND: Units are kΩ for RDT and µs for tdead. Where: RDT(min) = 50 kΩ RDT(max) = 1 MΩ. Where: Rosc(min) = 200 kΩ Rosc(max) = 2 MΩ (with low leakage current). 1999 Aug 10 (2) 11 Philips Semiconductors Preliminary specification Full bridge driver IC UBA2030T APPLICATION INFORMATION When the internal oscillator is used; the bridge commutating frequency is determined by the values of Rosc and Cosc. The bridge starts oscillating when the HV supply voltage exceeds the ‘start oscillating threshold’ (typically 15.5 V). If the supply voltage at the HV pin falls below the ‘stop oscillating threshold’ (typically 13 V), the UBA2030T enters the start-up state. Basic application A basic full bridge configuration with an HID lamp is shown in Fig.4. The bridge enable and shut-down functions are not used in this application. The EXO, BE, BER and SD pins are connected to system ground. The IC is powered by the high voltage supply. handbook, full pagewidth high voltage 570 V (max) SHR GHR C2 FSR HV EXO SD Ci DTC VDD SGND C3 13 12 14 11 15 10 18 8 20 UBA2030T 7 21 5 22 3 23 2 24 1 FSL BER C1 IGNITOR BE LAMP LL RC LR C4 GLL C5 PGND GLR RDT Cosc Rosc system ground Fig.4 Basic configuration. 1999 Aug 10 HR HL SHL GHL 12 MGK592 Philips Semiconductors Preliminary specification Full bridge driver IC UBA2030T Application with external control ground. The bridge commutation frequency is determined by the external oscillator. The shut-down input (pin SD) can be used to quickly turn off all four MOSFETs in the full bridge. Figure 5 shows an application containing an external oscillator control circuit referenced to system ground. The RC, BER and BE pins are connected to system high full voltage handbook, pagewidth 570 V (max) SHR GHR C2 FSR HV Ci EXO EXTERNAL OSCILLATOR CONTROL CIRCUIT SD DTC VDD SGND C3 13 12 14 11 15 10 18 8 20 UBA2030T 7 21 5 22 3 23 2 24 1 GHL FSL BER C1 IGNITOR BE RC LAMP LL GLL LR C4 C5 PGND GLR RDT MGK593 system ground Fig.5 External control configuration. 1999 Aug 10 HR HL SHL 13 Philips Semiconductors Preliminary specification Full bridge driver IC UBA2030T Automotive application Figure 6 shows a full bridge with an HID lamp in an automotive environment, and a control circuit referenced to the high side of the bridge. The BER and HV pins are connected to system ground. The bridge can be held in its current state using the BE pin. See the timing diagram in Fig.3. The life of an HID lamp depends on the rate of sodium migration through its quartz wall. To minimize this, the lamp must be operated negative with respect to system ground. handbook, full pagewidth CONTROL UNIT system ground SHR GHR C2 FSR HV EXO SD Ci DTC VDD SGND C3 13 12 14 11 15 10 18 8 20 UBA2030T 7 21 5 22 3 23 2 24 1 FSL BER C1 IGNITOR BE LAMP LL RC LR C4 GLL C5 PGND GLR RDT Cosc Rosc high voltage −570 V (max) Fig.6 Automotive configuration (example 1). 1999 Aug 10 HR HL SHL GHL 14 MGK591 Philips Semiconductors Preliminary specification Full bridge driver IC UBA2030T Additional application information The diode in series with the supply to pin HV prevents Ci being discharged if the lamp is shorted during the ignition phase. C6 should be positioned as close as possible to pin DTC. The control unit drives the MOSFETs relatively hard which can cause radiation. To prevent switching the MOSFETs hard, a resistor can be connected in series with each gate. The UBA2030T is the commutator part in a complete system for driving an HID lamp. The life of the HID lamp can depend on the amount of sodium that migrates through its quartz wall. To minimize this migration, the lamp must be operated negative with respect to system ground. In all applications, the voltage on pin HV must not be allowed to become lower than the voltage at pin VDD during the start-up phase or during normal operation, otherwise the full bridge will not operate correctly. During the start-up phase, pin EXO and pin SD should both be LOW. The voltage as a function of time at pin EXO and pin SD should be >5 V/ms. Figure 7 shows a full bridge with an HID lamp in a typical automotive configuration using a control unit referenced to the high side of the bridge. Pin BER is connected to system ground. The bridge can be held in its current state by pin BE. The supply current to the internal low voltage circuit is fed to pin HV which can be connected to either system ground or to a low voltage DC supply, such as a battery, as indicated by the dotted lines in Fig.7. from low handbook, fullvoltage pagewidth DC supply CONTROL UNIT system ground SHR GHR C2 FSR HV EXO Ci SD Ci DTC VDD SGND C6 C3 13 12 14 11 15 10 18 8 20 UBA2030T 7 21 5 22 3 23 2 24 1 RDT GHL FSL BER C1 IGNITOR BE RC LR C4 GLL C5 PGND GLR Cosc Rosc C1 = 150 nF. C2 = 150 nF. C3 = 220 nF. C6 = 100 pF. Cosc = 10 nF. Rosc = 147 kΩ. RDT = 50 to 1000 kΩ (220 kΩ = a ‘dead time’ of 1 µs). Fig.7 Automotive configuration (example 2). 15 LAMP LL high voltage −570 V (max) 1999 Aug 10 HR HL SHL MGL763 Philips Semiconductors Preliminary specification Full bridge driver IC UBA2030T PACKAGE OUTLINE SO24: plastic small outline package; 24 leads; body width 7.5 mm SOT137-1 D E A X c HE y v M A Z 13 24 Q A2 A (A 3) A1 pin 1 index θ Lp L 1 12 e detail X w M bp 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y mm 2.65 0.30 0.10 2.45 2.25 0.25 0.49 0.36 0.32 0.23 15.6 15.2 7.6 7.4 1.27 10.65 10.00 1.4 1.1 0.4 1.1 1.0 0.25 0.25 0.1 0.9 0.4 inches 0.10 0.012 0.096 0.004 0.089 0.01 0.019 0.013 0.014 0.009 0.61 0.60 0.30 0.29 0.050 0.419 0.043 0.055 0.394 0.016 0.043 0.039 0.01 0.01 0.004 0.035 0.016 Z (1) θ 8o 0o Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT137-1 075E05 MS-013AD 1999 Aug 10 EIAJ EUROPEAN PROJECTION ISSUE DATE 95-01-24 97-05-22 16 Philips Semiconductors Preliminary specification Full bridge driver IC UBA2030T SOLDERING If wave soldering is used the following conditions must be observed for optimal results: Introduction to soldering surface mount packages • Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). • For packages with leads on two sides and a pitch (e): – larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; There is no soldering method that is ideal for all surface mount IC packages. Wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used. – smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. Reflow soldering The footprint must incorporate solder thieves at the downstream end. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. • For packages with leads on four sides, the footprint must be placed at a 45° angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical reflow peak temperatures range from 215 to 250 °C. The top-surface temperature of the packages should preferable be kept below 230 °C. Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Wave soldering Manual soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. To overcome these problems the double-wave soldering method was specifically developed. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. 1999 Aug 10 17 Philips Semiconductors Preliminary specification Full bridge driver IC UBA2030T Suitability of surface mount IC packages for wave and reflow soldering methods SOLDERING METHOD PACKAGE REFLOW(1) WAVE BGA, SQFP not suitable suitable(2) HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS not PLCC(3), SO, SOJ suitable LQFP, QFP, TQFP SSOP, TSSOP, VSO suitable suitable suitable not recommended(3)(4) suitable not recommended(5) suitable Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”. 2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Aug 10 18 Philips Semiconductors Preliminary specification Full bridge driver IC UBA2030T NOTES 1999 Aug 10 19 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. 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Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 62 5344, Fax.+381 11 63 5777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1999 SCA 67 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 295002/02/pp20 Date of release: 1999 Aug 10 Document order number: 9397 750 05309