DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D119 BYD13 series Controlled avalanche rectifiers Product specification Supersedes data of April 1992 1996 May 24 Philips Semiconductors Product specification Controlled avalanche rectifiers BYD13 series FEATURES • Glass passivated • High maximum operating temperature k handbook, 4 columns a • Low leakage current MAM123 • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. Fig.1 Simplified outline (SOD81) and symbol. DESCRIPTION MARKING Cavity free cylindrical glass package through Implotec(1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. TYPE NUMBER MARKING CODE BYD13D 13D PH BYD13G 13G PH BYD13J 13J PH BYD13K 13K PH BYD13M 13M PH LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VRWM VR PARAMETER CONDITIONS MIN. MAX. UNIT repetitive peak reverse voltage BYD13D − 200 V BYD13G − 400 V BYD13J − 600 V BYD13K − 800 V BYD13M − 1000 V BYD13D − 200 V BYD13G − 400 V BYD13J − 600 V BYD13K − 800 V BYD13M − 1000 V BYD13D − 200 V BYD13G − 400 V BYD13J − 600 V BYD13K − 800 V BYD13M − 1000 V crest working reverse voltage continuous reverse voltage 1996 May 24 2 Philips Semiconductors Product specification Controlled avalanche rectifiers SYMBOL IF(AV) BYD13 series PARAMETER average forward current CONDITIONS MIN. MAX. UNIT Ttp = 55 °C; lead length = 10 mm; averaged over any 20 ms period; see Figs 2 and 4 − 1.40 A Tamb = 65 °C; PCB mounting (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4 − 0.75 A IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRRMmax − 20 ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj = Tj max prior to surge; inductive load switched off − 7 mJ Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C see Fig.5 A ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF V(BR)R IR PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IF = 1 A; Tj = Tj max; see Fig.6 − − 0.93 V IF = 1 A; see Fig.6 − − 1.05 V BYD13D 225 − − V BYD13G 450 − − V BYD13J 650 − − V BYD13K 900 − − V BYD13M 1100 − − V VR = VRRMmax; see Fig.7 − − 1 µA VR = VRRMmax; Tj = 165 °C; see Fig.7 − − 100 µA forward voltage reverse avalanche breakdown voltage IR = 0.1 mA reverse current trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.10 − 3 − µs Cd diode capacitance − 21 − pF VR = 0 V; f = 1 MHz; see Fig.8 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm Rth j-a thermal resistance from junction to ambient note 1 VALUE 60 K/W 120 K/W Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9. For more information please refer to the “General Part of associated Handbook”. 1996 May 24 3 UNIT Philips Semiconductors Product specification Controlled avalanche rectifiers BYD13 series GRAPHICAL DATA MBG039 MBG055 1.0 2.0 handbook, halfpage handbook, halfpage IF(AV) IF(AV) (A) (A) 1.6 0.8 1.2 0.6 0.8 0.4 0.4 0.2 0 0 0 40 80 120 0 200 160 Ttp (oC) a = 1.57; VR = VRRMmax; δ = 0.5. Lead length 10 mm. Fig.2 40 80 120 160 200 Tamb (oC) a = 1.57; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.9. Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MGC741 MGC736 2.5 handbook, halfpage 200 handbook, halfpage P (W) 2.0 a = 3 2.5 2 Tj 1.57 ( oC) 1.42 150 1.5 100 1.0 D G J K M 50 0.5 0 0 0.4 0.8 1.2 0 1.6 IF(AV) (A) 0 400 800 1200 VR, VRRM (V) a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.4 Solid line = VR. Dotted line = VRRM; δ = 0.5. Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 1996 May 24 Fig.5 4 Maximum permissible junction temperature as a function of reverse voltage. Philips Semiconductors Product specification Controlled avalanche rectifiers BYD13 series MBG048 MGC739 3 10halfpage handbook, 6 handbook, halfpage IR (µA) IF (A) 4 10 2 10 2 0 1 0 1 2 VF (V) 0 Solid line: Tj = 25 °C. Dotted line: Tj = 175 °C. Fig.6 40 80 120 160 200 Tj (oC) VR = VRRMmax. Forward current as a function of forward voltage; maximum values. Fig.7 Reverse current as a function of junction temperature; maximum values. MGC740 10 2 handbook, halfpage 50 handbook, halfpage 25 Cd (pF) 7 50 10 2 3 1 1 10 102 V (V) R 103 MGA200 f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.8 Diode capacitance as a function of reverse voltage; typical values. 1996 May 24 Fig.9 Device mounted on a printed-circuit board. 5 Philips Semiconductors Product specification Controlled avalanche rectifiers handbook, full pagewidth BYD13 series IF (A) DUT + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1.0 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.10 Test circuit and reverse recovery time waveform and definition. 1996 May 24 6 MAM057 Philips Semiconductors Product specification Controlled avalanche rectifiers BYD13 series PACKAGE OUTLINE 5 max handbook, full pagewidth 0.81 max 2.15 max 28 min 3.8 max 28 min MBC051 Dimensions in mm. Fig.11 SOD81. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 24 7