BSS138P 60 V, 360 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 °C - - 60 V VGS gate-source voltage Tamb = 25 °C ID drain current RDSon drain-source on-state resistance - - ±20 V Tamb = 25 °C; VGS = 10 V [1] - - 360 mA Tj = 25 °C; VGS = 10 V; ID = 300 mA [2] - 0.9 1.6 Ω [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Pulse test: tp ≤ 300 μs; δ ≤ 0.01. BSS138P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 mbb076 S 3. Ordering information Table 3. Ordering information Type number Package Name BSS138P Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] BSS138P AN* [1] * = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tamb = 25 °C - 60 V VGS gate-source voltage Tamb = 25 °C - ±20 V ID IDM BSS138P Product data sheet drain current peak drain current VGS = 10 V [1] Tamb = 25 °C - 360 mA Tamb = 100 °C - 230 mA - 1.2 A Tamb = 25 °C; single pulse; tp ≤ 10 μs All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 2 of 16 BSS138P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter Conditions total power dissipation Tamb = 25 °C Min Max Unit [2] - 350 mW [1] - 420 mW Tsp = 25 °C Tj junction temperature Tamb ambient temperature Tstg storage temperature - 1140 mW 150 °C −55 +150 °C −65 +150 °C - 360 mA Source-drain diode source current IS Tamb = 25 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 017aaa001 120 Pder (%) 017aaa002 120 Ider (%) 80 80 40 40 0 −75 −25 25 75 0 −75 125 175 Tamb (°C) P tot P der = ------------------------ × 100 % P tot ( 25°C ) Fig 1. [1] Product data sheet 25 75 125 175 Tamb (°C) ID I der = -------------------- × 100 % I D ( 25°C ) Normalized total power dissipation as a function of ambient temperature BSS138P −25 Fig 2. Normalized continuous drain current as a function of ambient temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 3 of 16 BSS138P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 017aaa111 10 ID (A) Limit RDSon = VDS/ID (1) 1 (2) 10−1 (3) (4) (5) 10−2 (6) 10−3 10−1 1 102 10 VDS (V) IDM = single pulse (1) tp = 100 μs (2) tp = 1 ms (3) tp = 10 ms (4) tp = 100 ms (5) DC; Tsp = 25 °C (6) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) BSS138P Product data sheet Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air thermal resistance from junction to solder point Min Typ Max Unit [1] - 310 370 K/W [2] - 260 300 K/W - - 115 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 4 of 16 BSS138P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 017aaa015 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.1 0.2 0.05 0.02 0.01 10 0 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa016 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.25 10 0.2 0.1 0.05 0 0.02 0.01 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS138P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 5 of 16 BSS138P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 60 - - V 0.9 1.2 1.5 V Tj = 25 °C - - 1 μA Tj = 150 °C - - 10 μA - - 100 nA - 1 2 Ω - 0.9 1.6 Ω - 700 - mS - 0.72 0.8 nC - 0.14 - nC - 0.24 - nC - 38 50 pF - 7 - pF - 4 - pF - 2 6 ns - 3 - ns - 9 20 ns - 4 - ns 0.47 0.75 1.1 V Static characteristics V(BR)DSS drain-source breakdown ID = 10 μA; VGS = 0 V voltage VGS(th) gate-source threshold voltage ID = 250 μA; VDS = VGS IDSS drain leakage current VDS = 60 V; VGS = 0 V IGSS RDSon gate leakage current drain-source on-state resistance VGS = ±20 V; VDS = 0 V [1] VGS = 5 V; ID = 50 mA VGS = 10 V; ID = 300 mA forward transconductance gfs VDS = 10 V; ID = 200 mA [1] Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time tf fall time ID = 300 mA; VDS = 30 V; VGS = 4.5 V VGS = 0 V; VDS = 10 V; f = 1 MHz VDS = 50 V; RL = 250 Ω; VGS = 10 V; RG = 6 Ω Source-drain diode VSD [1] BSS138P Product data sheet source-drain voltage IS = 115 mA; VGS = 0 V Pulse test: tp ≤ 300 μs; δ ≤ 0.01. All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 6 of 16 BSS138P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 017aaa112 1.0 VGS = 3.5 V ID (A) 017aaa113 10−3 2.75 V 3.0 V ID (A) 0.8 2.5 V 10−4 (1) 0.6 (2) (3) 2.25 V 0.4 10−5 2.0 V 0.2 0.0 0.0 1.0 2.0 3.0 4.0 10−6 0.0 0.5 1.0 1.5 VDS (V) 2.0 VGS (V) Tamb = 25 °C Tamb = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. 017aaa114 5.0 RDSon (Ω) (1) Sub-threshold drain current as a function of gate-source voltage 017aaa115 6.0 RDSon (Ω) (2) 4.0 4.0 3.0 2.0 (1) (3) 2.0 (4) (2) 1.0 (5) 0.0 0.0 0.2 0.4 0.6 0.8 0.0 0.0 1.0 2.0 ID (A) Tamb = 25 °C 4.0 6.0 8.0 10.0 VGS (V) ID = 300 mA (1) VGS = 2.0 V (1) Tamb = 150 °C (2) VGS = 2.5 V (2) Tamb = 25 °C (3) VGS = 3.0 V (4) VGS = 3.5 V (5) VGS = 10 V Fig 8. Drain-source on-state resistance as a function of drain current; typical values BSS138P Product data sheet Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 7 of 16 BSS138P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 017aaa116 0.8 ID (A) 017aaa022 2.4 a (1) (2) 0.6 1.8 0.4 1.2 0.2 0.6 (2) 0.0 0.0 1.0 (1) 2.0 3.0 VGS (V) 0.0 −60 VDS > ID × RDSon 0 60 120 180 Tamb (°C) R DSon a = ----------------------------R DSon ( 25°C ) (1) Tamb = 25 °C (2) Tamb = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa117 2.0 Fig 11. Normalized drain-source on-state resistance as a function of ambient temperature; typical values 017aaa118 102 VGS(th) (V) (1) C (pF) (1) 1.5 (2) 1.0 (2) 10 (3) (3) 0.5 0.0 −60 0 60 120 180 Tamb (°C) ID = 0.25 mA; VDS = VGS 1 10−1 f = 1 MHz; VGS = 0 V (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 12. Gate-source threshold voltage as a function of ambient temperature Product data sheet 102 10 VDS (V) (1) maximum values BSS138P 1 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 8 of 16 BSS138P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 017aaa119 5.0 VGS (V) 4.0 VDS ID 3.0 VGS(pl) 2.0 VGS(th) VGS 1.0 QGS1 0.0 0.0 QGS2 QGS 0.2 0.4 0.6 0.8 QG (nC) QGD QG(tot) 003aaa508 ID = 300 mA; VDS = 30 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa120 1.2 IS (A) 0.8 (1) (2) 0.4 0.0 0.0 0.4 0.8 1.2 VSD (V) VGS = 0 V (1) Tamb = 150 °C (2) Tamb = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values BSS138P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 9 of 16 BSS138P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BSS138P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 10 of 16 BSS138P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC JEITA TO-236AB EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 18. Package outline SOT23 (TO-236AB) BSS138P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 11 of 16 BSS138P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 10. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste 0.6 (3×) 0.7 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 19. Reflow soldering footprint SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 20. Wave soldering footprint SOT23 (TO-236AB) BSS138P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 12 of 16 BSS138P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BSS138P v.1 20101102 Product data sheet - - BSS138P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 13 of 16 BSS138P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. 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Export might require a prior authorization from national authorities. BSS138P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 14 of 16 BSS138P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BSS138P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 November 2010 © NXP B.V. 2010. All rights reserved. 15 of 16 BSS138P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Quality information . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 2 November 2010 Document identifier: BSS138P