BLF2425M7L140; BLF2425M7LS140 Power LDMOS transistor Rev. 3 — 6 September 2012 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M7L140 and BLF2425M7LS140 are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions Table 1. Typical performance Typical RF performance at Tcase = 25 C; IDq = 1300 mA in a common source class-AB production test circuit. Test signal CW f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2450 28 140 18.5 52 1.2 Features and benefits High efficiency High power gain Excellent ruggedness Excellent thermal stability Integrated ESD protection Designed for broadband operation (2400 MHz to 2500 MHz) Internally matched Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Industrial, scientific and medical applications in the frequency range from 2400 MHz to 2500 MHz BLF2425M7L(S)140 NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF2425M7L140 (SOT502A) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 BLF2425M7LS140 (SOT502B) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF2425M7L140 - flanged ceramic package; 2 mounting holes; 2 leads SOT502A BLF2425M7LS140 - earless flanged ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage 0.5 +13 V Tstg storage temperature 65 - C Tj junction temperature - 225 C 5. Thermal characteristics Table 5. BLF2425M7L140; BLF2425M7LS140 Product data sheet Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase = 80 C; PL = 125 W 0.28 K/W All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 September 2012 © NXP B.V. 2012. All rights reserved. 2 of 11 BLF2425M7L(S)140 NXP Semiconductors Power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.16 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 216 mA 1.5 1.9 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 5 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 41 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 500 nA gfs forward transconductance VDS = 10 V; ID = 10.8 A - 16 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 7.56 A - 69 - m Table 7. RF characteristics Test signal: CW; f = 2450 MHz; VDS = 28 V; IDq = 1300 mA; Tcase = 25 C unless otherwise specified in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL = 140 W 16 18.5 - dB RLin input return loss PL = 140 W - 16 8 dB D drain efficiency PL = 140 W 46 52 - % 7. Test information 7.1 Ruggedness in class-AB operation The BLF2425M7L140 and BLF2425M7LS140 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1300 mA; PL = 140 W (CW); f = 2450 MHz. BLF2425M7L140; BLF2425M7LS140 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 September 2012 © NXP B.V. 2012. All rights reserved. 3 of 11 BLF2425M7L(S)140 NXP Semiconductors Power LDMOS transistor 7.2 Impedance information Table 8. Typical impedance Measured load-pull data. Typical values unless otherwise specified. IDq = 1300 mA; VDS = 28 V. ZS and ZL defined in Figure 1. f ZS ZL (MHz) () () 2400 3.7 5.4j 1.3 1.5j 2450 6.9 5.0j 1.5 1.6j 2500 8.7 2.0j 1.5 1.6j drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.3 Circuit information & & & & 5 & & & & DDD Printed-Circuit Board (PCB): Rogers 4350B; r = 3.5; thickness = 0.508 mm; thickness copper plating = 35 m. See Table 9 for a list of components. Fig 2. BLF2425M7L140; BLF2425M7LS140 Product data sheet Component layout for application circuit All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 September 2012 © NXP B.V. 2012. All rights reserved. 4 of 11 BLF2425M7L(S)140 NXP Semiconductors Power LDMOS transistor Table 9. List of components For test circuit see Figure 2. Component Description Value Remarks C1, C4, C5 multilayer ceramic chip capacitor 15 pF ATC100B C2, C6 multilayer ceramic chip capacitor 10 F, 50 V Murata C3 multilayer ceramic chip capacitor 100 nF Murata C7 multilayer ceramic chip capacitor 62 pF ATC100B C8 electrolytic capacitor 22 F, 63 V R1 resistor 10 SMD 0805; Bourns 7.4 Graphical data *S G% DDD Ș' *S G% DDD Ș' 3/G%P VDS = 28 V; IDq = 1300 mA. (1) Gp at f = 2400 MHz (2) Gp at f = 2450 MHz (2) Gp at f = 2450 MHz (3) Gp at f = 2500 MHz (3) Gp at f = 2500 MHz (4) D at f = 2400 MHz (4) D at f = 2400 MHz (5) D at f = 2450 MHz (5) D at f = 2450 MHz (6) D at f = 2500 MHz (6) D at f = 2500 MHz Power gain and drain efficiency as function of load power; typical values BLF2425M7L140; BLF2425M7LS140 Product data sheet 3/: VDS = 28 V; IDq = 1300 mA. (1) Gp at f = 2400 MHz Fig 3. Fig 4. Power gain and drain efficiency as function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 September 2012 © NXP B.V. 2012. All rights reserved. 5 of 11 BLF2425M7L(S)140 NXP Semiconductors Power LDMOS transistor 8. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA ISSUE DATE 03-01-10 12-05-02 SOT502A Fig 5. EUROPEAN PROJECTION Package outline SOT502A BLF2425M7L140; BLF2425M7LS140 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 September 2012 © NXP B.V. 2012. All rights reserved. 6 of 11 BLF2425M7L(S)140 NXP Semiconductors Power LDMOS transistor Earless flanged ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 07-05-09 12-05-02 SOT502B Fig 6. 0.390 0.010 0.380 Package outline SOT502B BLF2425M7L140; BLF2425M7LS140 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 September 2012 © NXP B.V. 2012. All rights reserved. 7 of 11 BLF2425M7L(S)140 NXP Semiconductors Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 10. Abbreviations Acronym Description CW Continuous Wave ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal Oxide Semiconductor SMD Surface Mounted Device VSWR Voltage Standing Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date BLF2425M7L140_2425M7LS140 v.3 20120906 Modifications: • • • • Data sheet status Change notice Supersedes Product data sheet - BLF2425M7L140_ 2425M7LS140 v.2 The status of this document has been changed to Product data sheet. Table 1 on page 1: some changes have been made. Table 6 on page 3: some changes have been made. Table 7 on page 3: some changes have been made. BLF2425M7L140_2425M7LS140 v.2 20120420 Objective data sheet - BLF2425M7L140_ 2425M7LS140 v.1 BLF2425M7L140_2425M7LS140 v.1 20120130 Objective data sheet - - BLF2425M7L140; BLF2425M7LS140 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 September 2012 © NXP B.V. 2012. All rights reserved. 8 of 11 BLF2425M7L(S)140 NXP Semiconductors Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. BLF2425M7L140; BLF2425M7LS140 Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 September 2012 © NXP B.V. 2012. All rights reserved. 9 of 11 BLF2425M7L(S)140 NXP Semiconductors Power LDMOS transistor Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF2425M7L140; BLF2425M7LS140 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 6 September 2012 © NXP B.V. 2012. All rights reserved. 10 of 11 NXP Semiconductors BLF2425M7L(S)140 Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 4 Circuit information. . . . . . . . . . . . . . . . . . . . . . . 4 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 Handling information. . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 6 September 2012 Document identifier: BLF2425M7L140; BLF2425M7LS140