PHILIPS BLW29

DISCRETE SEMICONDUCTORS
DATA SHEET
BLW29
VHF power transistor
Product specification
August 1986
Philips Semiconductors
Product specification
VHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B or C operated mobile transmitters
with a nominal supply voltage of
13,5 V. Because of the high gain and
excellent power handling capability,
the transistor is especially suited for
design of wide-band and
semi-wide-band v.h.f. amplifiers.
Together with a BFQ42 driver stage,
BLW29
the chain can deliver 15 W with a
maximum drive power of 120 mW at
175 MHz. The transistor is resistance
stabilized and is guaranteed to
withstand severe load mismatch
conditions with a supply over-voltage
to 16,5 V.
It has a 3/8" capstan envelope with a
ceramic cap. All leads are isolated
from the stud.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C
MODE OF OPERATION
VCE
V
f
MHz
PL
W
Gp
dB
η
%
zi
Ω
YL
mS
c.w. class-B
13,5
175
15
> 10
> 60
1,3 + j0,68
180 − j54
c.w. class-B
12,5
175
15
typ. 10, 5
typ. 67
−
−
PIN CONFIGURATION
PINNING - SOT120
PIN
halfpage
4
1
c
3
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
handbook, halfpage
b
MBB012
e
2
MSB056
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
BLW29
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value
VCESM
max.
36 V
Collector-emitter voltage (open base)
VCEO
max.
18 V
Emitter-base voltage (open collector)
VEBO
max.
4 V
Collector current (average)
IC(AV)
max.
2,75 A
Collector current (peak value); f > 1 MHz
ICM
max.
8 A
R.F. power dissipation (f > 1 MHz); Tmb = 25 °C
Prf
max.
53 W
Storage temperature
Tstg
−65 to + 150 °C
Operating junction temperature
Tj
max.
200 °C
MGP414
10
handbook, halfpage
MGP415
60
handbook, halfpage
short-time
operation
during mismatch
Prf
IC
(A)
(W)
Th = 70 °C
Tmb = 25 °C
continuous
r.f. operation
derate by
0.3 W/K
40
1
continuous
d.c. operation
derate by 0.25 W/K
20
10−1
1
10
VCE (V)
0
102
0
Fig.2 D.C. SOAR.
50
Fig.3
100
Th (°C)
R.F. power dissipation;
VCE ≤ 16,5 V; f ≥ 1 MHz.
THERMAL RESISTANCE
(dissipation = 15 W; Tmb = 77 °C, i.e. Th = 70 °C)
Rth j-mb(dc)
=
3,7 K/W
From junction to mounting base (r.f. dissipation)
Rth j-mb(rf)
=
3,05 K/W
From mounting base to heatsink
Rth mb-h
=
0,45 K/W
From junction to mounting base (d.c. dissipation)
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
BLW29
CHARACTERISTICS
Tj = 25 °C
Collector-emitter breakdown voltage
V(BR) CES
>
36 V
V(BR)CEO
>
18 V
V(BR)EBO
>
4 V
ICES
<
5 mA
open base
ESBO
>
4 mJ
RBE = 10 Ω
ESBR
>
4 mJ
hFE
typ.
VBE = 0; IC = 15 mA
Collector-emitter breakdown voltage
open base; IC = 100 mA
Emitter-base breakdown voltage
open collector; IE = 5 mA
Collector cut-off current
VBE = 0; VCE = 18 V
Second breakdown energy; L = 25 mH; f = 50 Hz
D.C. current
gain(1)
IC = 1,75 A; VCE = 5 V
40
10 to 80
Collector-emitter saturation voltage(1)
IC = 5 A; IB = 1 A
VCEsat
typ.
1,5 V
−IE = 1,75 A; VCB = 13,5 V
fT
typ.
900 MHz
−IE = 5 A; VCB = 13,5 V
fT
typ.
825 MHz
Cc
typ.
43 pF
Cre
typ.
27 pF
Ccs
typ.
2 pF
Transition frequency at f = 100 MHz(1)
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 13,5 V
Feedback capacitance at f = 1 MHz
IC = 100 mA; VCE = 13,5 V
Collector-stud capacitance
Note
1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0,02.
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
BLW29
MGP416
60
MGP417
150
handbook, halfpage
handbook, halfpage
VCE = 13.5 V
hFE
Cc
(pF)
5V
40
100
typ
50
20
0
0
0
5
IC (A)
0
10
Fig.4 Typical values; Tj = 25 °C.
10
VCB (V)
20
Fig.5 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.
MGP418
1500
handbook, full pagewidth
fT
(MHz)
1000
typ
500
0
0
2
4
6
Fig.6 VCB = 13,5 V; f = 100 MHz; Tj = 25 °C.
August 1986
5
8
−IE (A)
10
Philips Semiconductors
Product specification
VHF power transistor
BLW29
APPLICATION INFORMATION
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 °C
f (MHz)
VCE (V)
PL (W)
PS (W)
Gp (dB)
IC (A)
η (%)
zi (Ω)
YL(mS)
175
13,5
15
< 1,5
> 10
< 1,85
> 60
1,3 + j0,68
180 − j54
175
12,5
15
typ. 1,34
typ. 10,5
typ. 1,8
typ. 67
−
−
handbook, full pagewidth
C1
L1
50 Ω
L3
C6
L7
L4
C3a
50 Ω
T.U.T.
C7
L5
C3b
C2
C4
C5
R1
L2
R2
L6
MGP419
+VCC
Fig.7 Test circuit; c.w. class-B.
List of components:
C1
=
2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C2
=
C6 = C7 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
C3a =
C3b = 47 pF ceramic capacitor (500 V)
C4
=
1 nF ceramic capacitor
C5
=
100 nF polyester capacitor
L1
=
1⁄
L2
=
L6 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3
=
L4 = strip (12 mm × 6 mm); taps for C3a and C3b at 5 mm from transistor
L5
=
41⁄2 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 6,0 mm; leads 2 × 5 mm
L7
=
2 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 6,0 mm; leads 2 × 5 mm
2
turn Cu wire (1,6 mm); int. dia. 6,0 mm; leads 2 × 5 mm
L3 and L4 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16".
R1
=
R2 = 10 Ω carbon resistor
Component layout and printed-circuit board for 175 MHz test circuit are shown in Fig.8.
August 1986
6
Philips Semiconductors
Product specification
VHF power transistor
BLW29
150
handbook, full pagewidth
72
L2
L6
+VCC
C4
R1
strip
C1
C2
L1
C5
R2
C3a
L3
L4
L5
C6
C7
L7
C3b
rivet
MGP420
Fig.8 Component layout and printed-circuit board for 175 MHz test circuit.
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.
August 1986
7
Philips Semiconductors
Product specification
VHF power transistor
BLW29
MGP421
30
MGP422
125
η
(%)
25
handbook, halfpage
handbook, halfpage
Gp
PL
(W)
(dB)
20
Th = 25 °C
100
Gp
Th = 25 °C
20
15
70 °C
Th = 70 °C
η
10
75
50
25 °C
10
70 °C
25
5
0
0
0
0
2
4
PS (W)
0
 VCE = 13,5 V;
− − − VCE = 12, 5 V
PL (W)
30
Fig.10 Typical values; f = 175 MHz.
VSWR =
5
The transistor has been developed for use with
unstabilized supply voltages. As the output power and
drive power increase with the supply voltage, the nominal
output power must be derated in accordance with the
graph for safe operation at supply voltages other than the
nominal. The graph shows the permissible output power
under nominal conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio with VSWR as
parameter.
10
20
50
The graph applies to the situation in which the drive
(PS/PSnom) increases linearly with supply over-voltage
ratio.
MGP423
25
handbook, halfpage
PLnom
(W)
(VSWR = 1)
20
15
OPERATING NOTE
PS
PSnom
10
1.1
1.2
VCE
Below 70 MHz a base-emitter resistor of 10 Ω is
recommended to avoid oscillation. This resistor must be
effective for r.f. only.
1.3
VCEnom
Th = 70 °C; Rth mb-h = 0,45 K/W; VCEnom = 13,5 V or 12,5 V;
PS = PSnom at VCEnom and VSWR = 1
Fig.11 R.F. SOAR (short-time operation during
mismatch); f = 175 MHz;
August 1986
20
 VCE = 13,5 V;
− − − VCE = 12, 5 V
Fig.9 Typical values; f = 175 MHz.
.
1
10
8
Philips Semiconductors
Product specification
VHF power transistor
BLW29
MGP424
10
MGP425
7.5
handbook, halfpage
handbook, halfpage
ri, xi
(Ω)
RL
(Ω)
5
ri
CL
RL
0
CL
(pF)
RL
5
−100
2.5
−200
xi
ri
0
xi
CL
−5
0
0
250
f (MHz)
500
0
Typical values; VCE = 13,5 V; PL = 15 W;
Th = 25 °C.
Typical values; VCE = 13,5 V; PL = 15 W;
Th = 25 °C.
Fig.12
Fig.13
MGP426
30
handbook, halfpage
Gp
(dB)
20
10
0
0
250
f (MHz)
500
Typical values; VCE = 13,5 V; PL = 15 W;
Th = 25 °C.
Fig.14
August 1986
250
9
f (MHz)
−300
500
Philips Semiconductors
Product specification
VHF power transistor
BLW29
PACKAGE OUTLINE
Studded ceramic package; 4 leads
SOT120A
D
A
Q
c
A
D1
N1
w1 M A
D2
N
M
W
N3
M1
X
H
detail X
b
4
L
3
H
1
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
D2
H
L
M
M1
N
N1
N3
Q
mm
5.97
4.74
5.90
5.48
0.18
0.14
9.73
9.47
8.39
8.12
9.66
9.39
27.44
25.78
9.00
8.00
3.41
2.92
1.66
1.39
12.83
11.17
1.60
0.00
3.31
2.54
4.35
3.98
0.065 0.505 0.063
0.055 0.440 0.000
0.130
0.100
0.171
0.157
inches 0.283
0.248
OUTLINE
VERSION
0.232 0.007
0.216 0.004
0.383 0.330 0.380 1.080
0.373 0.320 0.370 1.015
0.354 0.134
0.315 0.115
REFERENCES
IEC
JEDEC
EIAJ
w1
0.38
8-32
UNC
EUROPEAN
PROJECTION
0.015
ISSUE DATE
97-06-28
SOT120A
August 1986
W
10
Philips Semiconductors
Product specification
VHF power transistor
BLW29
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1986
11