INTEGRATED CIRCUITS DATA SHEET TDA1562Q; TDA1562ST; TDA1562SD 70 W high efficiency power amplifier with diagnostic facility Preliminary specification Supersedes data of 1998 Apr 07 2003 Feb 12 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD FEATURES • Fast mute on supply voltage drops • Very high output power, operating from a single low supply voltage • Quick start option (e.g. car-telephony/navigation) • Low power dissipation, when used for music signals • Load dump protection • Switches to low output power at too high case temperatures • Short-circuit safe to ground, supply voltage and across the load • Few external components • Low power dissipation in any short-circuit condition • Fixed gain • Protected against electrostatic discharge • Differential inputs with high common mode rejection • Thermally protected • Mode select pin (on, mute and standby) • Flexible leads. • Low (delta) offset voltage at the outputs • Status I/O pin (class-H, class-B and fast mute) • All switching levels with hysteresis GENERAL DESCRIPTION • Diagnostic pin with information about: The TDA1562 is a monolithic integrated 70 W/4 Ω Bridge-Tied Load (BTL) class-H high efficiency power amplifier in a 17 lead DIL-bent-SIL plastic power package. – Dynamic Distortion Detector (DDD) – Any short-circuit at outputs The device can be used for car audio systems (e.g. car radios and boosters) as well as mains fed applications (e.g. midi/mini audio combinations and TV sound). – Open load detector – Temperature protection. • No switch-on or switch-off plops QUICK REFERENCE DATA VP = 14.4 V; RL = 4 Ω; Rs = 0 Ω; f = 1 kHz; Tamb = 25 °C; unless otherwise specified. SYMBOL VP PARAMETER supply voltage CONDITIONS MIN. TYP. MAX. UNIT operating; note 1 8 14.4 18 V non-operating − − 30 V load dump − − 45 V Iq quiescent current on and mute; RL = open circuit − 110 150 mA Istb standby current standby − 3 50 µA VOO output offset voltage on and mute − − 100 mV ∆VOO delta output offset voltage on ↔ mute − − 30 mV Gv voltage gain 25 26 27 dB Zi(dif) differential input impedance 90 150 − kΩ Po output power THD = 0.5% 45 55 − W THD = 10% 60 70 − W Po = 1 W − 0.03 − % Po = 20 W − 0.06 − % DDD active − 2.1 − % THD 2003 Feb 12 total harmonic distortion 2 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility SYMBOL PARAMETER TDA1562Q; TDA1562ST; TDA1562SD CONDITIONS MIN. TYP. MAX. UNIT SVRR supply voltage ripple rejection on and mute 55 63 − dB CMRR common mode rejection ratio on 56 80 − dB ISRR input signal rejection ratio mute 80 100 − dB Vn(o) noise output voltage on − 100 150 µV Note 1. When operating at VP > 16 V, the output power must be limited to 85 W at THD = 10% (or minimum load is 6 Ω). ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION TDA1562Q DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1 TDA1562Q/S10 DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 7.7 mm) SOT243-3 TDA1562ST RDBS17P plastic rectangular-DIL-bent-SIL power package; 17 leads (row spacing 2.54 mm) SOT577-2 TDA1562SD RDBS17P plastic rectangular-DIL-bent-SIL (reverse bent) power package; 17 leads (row spacing 2.54 mm) SOT668-2 2003 Feb 12 3 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD BLOCK DIAGRAM C1− handbook, full pagewidth 3 STAT MODE 16 4 CLASS-B CLASS-H FAST MUTE disable 75 kΩ − PREAMP + 2 OUT+ DYNAMIC DISTORTION DETECTOR 8 11 POWERSTAGE DIAG OUT− VP* 15 kΩ SGND LOAD DETECTOR 14 17 7 DIAGNOSTIC INTERFACE 75 kΩ Vref TDA1562 POWERSTAGE FEEDBACK CIRCUIT IN− 10 CURRENT PROTECTION LIFT-SUPPLY + PREAMP − VP2 LOAD DUMP PROTECTION VP* IN+ 9 5 TEMPERATURE SENSOR STANDBY MUTE ON 1 VP1 C1+ disable LIFT-SUPPLY TEMPERATURE PROTECTION 15 C2− 6 PGND1 reference voltage MGL264 13 C2+ Fig.1 Block diagram. 2003 Feb 12 4 12 PGND2 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD PINNING SYMBOL PIN DESCRIPTION IN+ 1 signal input (positive) IN− 2 signal input (negative) C1− 3 negative terminal of lift electrolytic capacitor 1 MODE 4 mode select input C1+ 5 positive terminal of lift electrolytic capacitor 1 PGND1 6 power ground 1 OUT+ 7 positive output DIAG 8 diagnostic output (open-collector) VP1 9 supply voltage 1 handbook, halfpage IN+ 1 IN− 2 C1− 3 MODE 4 C1+ 5 PGND1 6 OUT+ 7 DIAG 8 TDA1562Q TDA1562ST VP2 10 TDA1562SD VP1 9 VP2 10 supply voltage 2 OUT− 11 negative output PGND2 12 power ground 2 C2+ 13 positive terminal of lift electrolytic capacitor 2 C2+ 13 Vref 14 internal reference voltage Vref 14 C2− 15 negative terminal of lift electrolytic capacitor 2 C2− 15 STAT 16 status I/O SGND 17 signal ground OUT− 11 PGND2 12 STAT 16 SGND 17 MGL263 Fig.2 Pin configuration. 2003 Feb 12 5 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD FUNCTIONAL DESCRIPTION Status I/O (pin STAT) The TDA1562 contains a mono class-H BTL output power amplifier. At low output power, up to 18 W, the device operates as a normal BTL amplifier. When a larger output voltage swing is required, the internal supply voltage is lifted by means of the external electrolytic capacitors. Due to this momentarily higher supply voltage the obtainable output power is 70 W. INPUT This input has 3 possibilities: 1. LOW for fast mute: the circuit remains switched on, but the input signal is suppressed 2. MID for class-B: the circuit operates as class-B amplifier, the high power supply voltage is disabled, independent of the case temperature In normal use, when the output is driven with music-like signals, the high output power is only needed during a small percentage of time. Under the assumption that a music signal has a normal (Gaussian) amplitude distribution, the reduction in dissipation is about 50% when compared to a class-B output amplifier with the same output power. The heatsink should be designed for use with music signals. If the case temperature exceeds 120 °C the device will switch back from class-H to class-B operation. The high power supply voltage is then disabled and the output power is limited to 20 W. 3. HIGH for class-H: the circuit operates as class-H amplifier, the high power supply voltage is enabled, independent of the case temperature. When the circuit is switched from fast mute to class-B/H or vice versa the switching is immediately carried out. When the circuit is switched from class-B to class-H or vice versa the actual switching takes place at a zero crossing of the input signal. OUTPUT When the supply voltage drops below the minimum operating level, the amplifier will be muted immediately. This output has 3 possibilities: Mode select input (pin MODE) 2. MID for class-B: the circuit operates as class-B amplifier, the high power supply voltage is disabled, caused by the case temperature Tc > 120 °C 1. LOW for mute: acknowledge of muted amplifier This pin has 3 modes: 1. LOW for standby: the complete circuit is switched off, the supply current is very low 3. HIGH for class-H: the circuit operates as class-H amplifier, the high power supply voltage is enabled, because the case temperature Tc < 120 °C. 2. MID for mute: the circuit is switched on, but the input signal is suppressed When the circuit is switched from class-B to class-H or vice versa the actual switching takes place at a zero crossing of the input signal. 3. HIGH for on: normal operation, the input signal is amplified by 26 dB. When the circuit is switched from mute to on or vice versa the actual switching takes place at a zero crossing of the input signal. The circuit contains a quick start option, i.e. when it is switched directly from standby to on, the amplifier is fully operational within 50 ms (important for applications like car telephony and car navigation). 2003 Feb 12 The status I/O pins of maximum 8 devices may be tied together for synchronizing purposes. 6 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility handbook, full pagewidth supply voltage TDA1562Q; TDA1562ST; TDA1562SD on mute 0 HIGH mode select input MID LOW Vref reference voltage VRT 0 HIGH status I/O input MID LOW HIGH status I/O output MID LOW output voltage across load class-H (Tc < 120 °C) class-B (Tc > 120 °C) 0 quick start mute zero crossing change class-B/H operation fast mute function zero crossing mute function supply mute function MGL272 Fig.3 Switching characteristics. 2003 Feb 12 7 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD Diagnostic output (pin DIAG) TEMPERATURE DETECTION DYNAMIC DISTORTION DETECTOR (DDD) Just before the temperature protection becomes active the diagnostic output becomes continuously LOW. At the onset of clipping of the output stages, the DDD becomes active. This information can be used to drive a sound processor or DC-volume control to attenuate the input signal and so limit the distortion. LOAD DETECTION Directly after the circuit is switched from standby to mute or on, a built-in detection circuit checks whether a load is present. The results of this check can be detected at the diagnostic output, by switching the mode select input in the mute mode. SHORT-CIRCUIT PROTECTION When a short-circuit occurs at the outputs to ground or to the supply voltage, the output stages are switched off. They will be switched on again approximately 20 ms after removing the short-circuit. During this short-circuit condition the diagnostic output is continuously LOW. Since the diagnostic output is an open-collector output, more devices can be connected. When a short-circuit occurs across the load, the output stages are switched off during approximately 20 ms. After that time is checked during approximately 50 µs whether the short-circuit is still present. During this short-circuit condition the diagnostic output is LOW for 20 ms and HIGH for 50 µs. The power dissipation in any short-circuit condition is very low. HIGH handbook, full pagewidth mode select input MID LOW output voltage across load 0 HIGH diagnostic output no load LOW t short-circuit to supply or ground clipping signal Fig.4 Diagnostic information. 2003 Feb 12 8 short-circuit across load MGL265 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility handbook, full pagewidth maximum output voltage swing TDA1562Q; TDA1562ST; TDA1562SD status I/O: high class-H status I/O: open class-B 0 HIGH diagnostic output LOW HIGH status I/O output MID LOW 100 120 145 150 160 Tj (°C) MGL266 Fig.5 Behaviour as a function of temperature. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VP PARAMETER supply voltage CONDITIONS MIN. MAX. UNIT operating; note 1 − 18 V non-operating − 30 V load dump; tr > 2.5 ms; t = 50 ms − 45 V IOSM non-repetitive peak output current − 10 A IORM repetitive peak output current − 8 A Vsc short-circuit safe voltage − 18 V Tstg storage temperature −55 +150 °C Tamb ambient temperature −40 − °C Tj junction temperature − 150 °C Ptot total power dissipation − 60 W note 2 Notes 1. When operating at VP > 16 V, the output power must be limited to 85 W at THD = 10% (or minimum load is 6 Ω). 2. Tj is a theoretical temperature which is based on a simplified representation of the thermal behaviour of the device. Tj = Tc + P × Rth(j-c), where Rth(j-c) is a fixed value to be used for the calculation of Tj. The rating for Tj limits the allowable combinations of power dissipation P and case temperature Tc (in accordance with IEC 60747-1). 2003 Feb 12 9 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD QUALITY SPECIFICATION Quality in accordance with “SNW-FQ-611D”, if this type is used as an audio amplifier. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth(j-c) thermal resistance from junction to case Rth(j-a) thermal resistance from junction to ambient VALUE UNIT 1.5 K/W 40 K/W in free air DC CHARACTERISTICS VP = 14.4 V; RL = 4 Ω; Tamb = 25 °C; measurements in accordance with Fig.9; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supplies VP1 and VP2 VP supply voltage VP(th+) supply threshold voltage 8 14.4 18 V mute → on 7 − 9 V on → mute 7 − 9 V − 200 − mV VP(th−) supply threshold voltage VP(H1) hysteresis (Vth+ − Vth−) Iq quiescent current on and mute; RL = open circuit − 110 150 mA Istb standby current standby − 3 50 µA Amplifier outputs OUT+ and OUT− VO output voltage on and mute − 6.5 − V VOO output offset voltage on and mute − − 100 mV ∆VOO delta output offset voltage on ↔ mute − − 30 mV 0 − VP V Mode select input MODE VI input voltage II input current VMODE = 14.4 V − 15 20 µA Vth1+ threshold voltage 1+ standby → mute 1 − 2.2 V Vth1− threshold voltage 1− mute → standby 0.9 − 2 V VmsH1 hysteresis (Vth1+ − Vth1−) − 200 − mV Vth2+ threshold voltage 2+ mute → on 3.3 − 4.2 V Vth2− threshold voltage 2− on → mute 3.3 − 4 V VmsH2 hysteresis (Vth2+ − Vth2−) − 200 − mV 0 − VP V Status I/O STAT PIN STAT AS INPUT Vst input voltage Ist(H) HIGH-level input current VSTAT = 14.4 V − 3.5 4.5 mA Ist(L) LOW-level input current VSTAT = 0 V − −350 −400 µA Vth1+ threshold voltage 1+ fast mute → class-B − − 2 V Vth1− threshold voltage 1− class-B → fast mute 1 VstH1 hysteresis (Vth1+ − Vth1−) 2003 Feb 12 − 10 − − V 200 − mV Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility SYMBOL PARAMETER TDA1562Q; TDA1562ST; TDA1562SD CONDITIONS Vth2+ threshold voltage 2+ class-B → class-H Vth2− threshold voltage 2− class-H → class-B VstH2 hysteresis (Vth2+ − Vth1−) MIN. − TYP. − MAX. 4.2 UNIT V 3.3 − − V − 200 − mV PIN STAT AS OUTPUT Ist(mute) mute acknowledge sink current Vst(mute) mute acknowledge output voltage Ist(clB) class-B operation output current Vst(clB) class-B operation output voltage Ist(clH) class-H operation source current Vst(clH) class-H operation output voltage Tc(th) threshold case temperature sensor Ist = 2.2 mA Ist = 15 µA Ist = −140 µA 2.2 − − mA − − 0.5 V 15 − − µA 2.0 − 3.0 V −140 − − µA VP − 2.5 − − V − 120 − °C − − 0.6 V Diagnostic output DIAG VDIAG output voltage RL load resistance for open load detection 100 − − Ω Tj(th) threshold junction temperature sensor − 145 − °C handbook, full pagewidth active LOW on fast mute VPH1 Vth− VP Vth+ Fig.6 Supply voltage transfer characteristic. 2003 Feb 12 11 MGL267 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility handbook, full pagewidth TDA1562Q; TDA1562ST; TDA1562SD on mute standby VmsH2 VmsH1 Vth1− Vth2− Vth1+ Vms Vth2+ MGL268 Fig.7 Mode select transfer characteristic. handbook, full pagewidth class-H class-B fast mute VstH1 Vth1− VstH2 Vth2− Vth1+ Vst Vth2+ MGL269 Fig.8 Status I/O transfer characteristic. 2003 Feb 12 12 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD AC CHARACTERISTICS VP = 14.4 V; RL = 4 Ω; Rs = 0 Ω; f = 1 kHz; Tamb = 25 °C; measurements in accordance with Fig.9; unless otherwise specified. SYMBOL Po PARAMETER output power CONDITIONS MIN. TYP. MAX. UNIT class-B; THD = 10% 16 19 − W class-H; THD = 10% 60 70 − W class-H; THD = 0.5% 45 55 − W fro(h)(P) high frequency power roll-off Po (−1 dB); THD = 0.5%; note 1 − 20 − kHz THD total harmonic distortion Po = 1 W − 0.03 − % Po = 20 W − 0.06 − % DDD active − 2.1 − % 25 26 27 dB Gv (−1 dB); note 2 20 − − kHz Gv voltage gain fro(h)(G) high frequency gain roll-off Zi(dif) differential input impedance 90 150 210 kΩ SVRR supply voltage ripple rejection on and mute; note 3 55 63 − dB standby; note 3 − 90 − dB CMRR common mode rejection ratio on; note 4 56 80 − dB ISRR input signal rejection ratio mute; note 5 80 100 − dB Vn(o) noise output voltage on; note 6 − 100 150 µV mute; notes 6 and 7 − 60 − µV Notes 1. The low frequency power roll-off is determined by the value of the electrolytic lift capacitors. 2. The low frequency gain roll-off is determined by the value of the input coupling capacitors. 3. Supply voltage ripple rejection is measured across RL; ripple voltage Vripple(max) = 2 V (p-p). 4. Common mode rejection ratio is measured across RL; common mode voltage Vcm(max) = 2 V (p-p). CMMR (dB) = differential gain (Gv) + common mode attenuation (αcm). Test set-up according to Fig.10; mismatch of input coupling capacitors excluded. 5. Input signal rejection ratio is measured across RL; input voltage Vi(max) = 2 V (p-p). ISSR (dB) = different gain (Gv) + mute attenuation (αm). 6. Noise output voltage is measured in a bandwidth of 20 Hz to 20 kHz. 7. Noise output voltage is independent of source impedance Rs. 2003 Feb 12 13 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD TEST AND APPLICATION INFORMATION 4700 µF C1− STAT MODE 100 nF 16 4 CLASS-B CLASS-H FAST MUTE 1/2*Rs 75 kΩ − PREAMP + 2 IN− 7 OUT+ LOAD DETECTOR + VP 10 kΩ DYNAMIC DISTORTION DETECTOR 8 RL = 4Ω DIAG 11 POWERSTAGE OUT− VP* 14 Vref 15 kΩ 17 TDA1562 POWERSTAGE FEEDBACK CIRCUIT 1/2*Rs CURRENT PROTECTION LIFT-SUPPLY DIAGNOSTIC INTERFACE audio source 10 µF disable + PREAMP − 75 kΩ 9 + VP LOAD DUMP PROTECTION VP* IN+ 100 nF 5 TEMPERATURE SENSOR STANDBY MUTE ON 1 VP1 C1+ 3 2200 µF 100 nF VP2 10 disable LIFT-SUPPLY TEMPERATURE PROTECTION reference voltage SGND 15 C2+ handbook, full pagewidth C2− 13 PGND1 12 PGND2 4700 µF Fig.9 Test and application circuit. 2003 Feb 12 6 14 GND MGL271 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD + VP handbook, full pagewidth 9 Ci Ci VCM 10 supply 7 1 RL TDA1562 11 2 14 SGND 17 PGND1 PGND2 6 12 GND MGL270 Fig.10 CMRR test set-up. 2003 Feb 12 15 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD PACKAGE OUTLINES DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1 non-concave Dh x D Eh view B: mounting base side d A2 B j E A L3 L Q c 1 v M 17 e1 Z bp e e2 m w M 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A2 bp c D (1) d Dh E (1) e mm 17.0 15.5 4.6 4.4 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 12.2 11.8 2.54 e1 e2 1.27 5.08 Eh j L L3 m Q v w x Z (1) 6 3.4 3.1 12.4 11.0 2.4 1.6 4.3 2.1 1.8 0.8 0.4 0.03 2.00 1.45 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-12-16 99-12-17 SOT243-1 2003 Feb 12 EUROPEAN PROJECTION 16 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD RDBS17P: plastic rectangular-DIL-bent-SIL power package; 17 leads (row spacing 2.54 mm) SOT577-2 non-concave Dh x D Eh view B: mounting base side d A2 B j E A L 1 e2 17 e1 Z w M bp e c v M 0 5 Q L1 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A2 bp c D(1) d Dh E(1) e e1 e2 Eh j L mm 13.5 4.6 4.4 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 12.2 11.8 2.54 1.27 2.54 6 3.4 3.1 3.75 3.15 L1 Q v w x Z(1) 3.75 3.15 2.1 1.8 0.6 0.4 0.03 2.00 1.45 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT577-2 2003 Feb 12 EUROPEAN PROJECTION ISSUE DATE 01-01-05 17 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD RDBS17P: plastic rectangular-DIL-bent-SIL power package; 17 leads (row spacing 2.54 mm) SOT577-2 non-concave Dh x D Eh view B: mounting base side d A2 B j E A L 1 e2 17 e1 Z w M bp e c v M 0 5 Q L1 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A2 bp c D(1) d Dh E(1) e e1 e2 Eh j L mm 13.5 4.6 4.4 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 12.2 11.8 2.54 1.27 2.54 6 3.4 3.1 3.75 3.15 L1 Q v w x Z(1) 3.75 3.15 2.1 1.8 0.6 0.4 0.03 2.00 1.45 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT577-2 2003 Feb 12 EUROPEAN PROJECTION ISSUE DATE 01-01-05 18 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD RDBS17P: plastic rectangular-DIL-bent-SIL (reverse bent) power package; 17 leads (row spacing 2.54 mm) SOT668-2 non-concave Dh x D Eh view B: mounting base side d A2 B j E A Q L c 17 1 e1 Z w M bp e L1 0 5 e2 v M 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A2 bp c D (1) d Dh E (1) e e1 e2 Eh j L L1 Q v w x Z (1) mm 13.5 4.6 4.4 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 12.2 11.8 2.54 1.27 2.54 6 3.4 3.1 3.75 3.15 3.75 3.15 2.1 1.9 0.6 0.4 0.03 2.00 1.45 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 01-01-05 SOT668-2 2003 Feb 12 EUROPEAN PROJECTION 19 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD The total contact time of successive solder waves must not exceed 5 seconds. SOLDERING Introduction to soldering through-hole mount packages The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. This text gives a brief insight to wave, dip and manual soldering. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). Wave soldering is the preferred method for mounting of through-hole mount IC packages on a printed-circuit board. Manual soldering Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. Soldering by dipping or by solder wave The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joints for more than 5 seconds. Suitability of through-hole mount IC packages for dipping and wave soldering methods SOLDERING METHOD PACKAGE DIPPING DBS, DIP, HDIP, SDIP, SIL WAVE suitable(1) suitable Note 1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. 2003 Feb 12 20 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Feb 12 21 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD NOTES 2003 Feb 12 22 Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD NOTES 2003 Feb 12 23 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 753503/02/pp24 Date of release: 2003 Feb 12 Document order number: 9397 750 09939