PHILIPS PBSS3515VS

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS3515VS
15 V low VCE(sat) PNP double
transistor
Product data sheet
Supersedes data of 2001 Nov 07
2004 Dec 23
NXP Semiconductors
Product data sheet
15 V low VCE(sat) PNP double transistor
FEATURES
PBSS3515VS
QUICK REFERENCE DATA
• 300 mW total power dissipation
SYMBOL
• Very small 1.6 × 1.2 mm ultra thin package
VCEO
collector-emitter voltage
−15
V
• Self alignment during soldering due to straight leads
ICM
peak collector current
−1
A
• Low collector-emitter saturation voltage
RCEsat
equivalent on-resistance
<500
mΩ
PARAMETER
MAX.
UNIT
• High current capability
PINNING
• Improved thermal behaviour due to flat leads
• Replaces two SC75/SC89 packaged low VCEsat
transistors on same PCB area
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
• Reduces required PCB area
2, 5
base
TR1; TR2
• Reduced pick and place costs.
6, 3
collector
TR1; TR2
APPLICATIONS
• General purpose switching and muting
• Low frequency driver circuits
• LCD backlighting
6
• Audio frequency general purpose amplifier applications
5
4
6
5
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
4
TR2
TR1
DESCRIPTION
1
PNP low VCEsat double transistor in a SOT666 plastic
package.
NPN complement: PBSS2515VS.
2
Top view
1
3
2
3
MAM450
MARKING
TYPE NUMBER
MARKING CODE
PBSS3515VS
Fig.1
Simplified outline (SOT666) and symbol.
35
ORDERING INFORMATION
TYPE NUMBER
PBSS3515VS
2004 Dec 23
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 6 leads
2
VERSION
SOT666
NXP Semiconductors
Product data sheet
15 V low VCE(sat) PNP double transistor
PBSS3515VS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor unless otherwise specified
VCBO
collector-base voltage
open emitter
−
−15
V
VCEO
collector-emitter voltage
open base
−
−15
V
VEBO
emitter-base voltage
open collector
−
−6
V
IC
collector current (DC)
−
−500
mA
ICM
peak collector current
−
−1
A
IBM
peak base current
−
−100
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
−
300
mW
Tamb ≤ 25 °C; note 1
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
notes 1 and 2
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
2004 Dec 23
3
VALUE
UNIT
416
K/W
NXP Semiconductors
Product data sheet
15 V low VCE(sat) PNP double transistor
PBSS3515VS
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor unless otherwise specified
ICBO
collector-base cut-off current
IEBO
emitter-base cut-off current
hFE
DC current gain
VCEsat
collector-emitter saturation
voltage
VCB = −15 V; IE = 0 A
−
−
−100
nA
VCB = −15 V; IE = 0 A; Tj = 150 °C
−
−
−50
μA
VEB = −5 V; IC = 0 A
−
−
−100
nA
VCE = −2 V; IC = −10 mA
200
−
−
VCE = −2 V; IC = −100 mA; note 1
150
−
−
VCE = −2 V; IC = −500 mA; note 1
90
−
−
IC = −10 mA; IB = −0.5 mA
−
−
−25
mV
IC = −200 mA; IB = −10 mA
−
−
−150
mV
IC = −500 mA; IB = −50 mA; note 1
−
−
−250
mV
RCEsat
equivalent on-resistance
IC = −500 mA; IB = −50 mA; note 1
−
300
<500
mΩ
VBEsat
base-emitter saturation voltage
IC = −500 mA; IB = −50 mA; note 1
−
−
−1.1
V
VBE
base-emitter turn-on voltage
VCE = −2 V; IC = −100 mA; note 1
−
−
−0.9
V
fT
transition frequency
IC = −100 mA; VCE = −5 V;
f = 100 MHz
100
280
−
MHz
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0 A; f = 1 MHz
−
−
10
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Dec 23
4
NXP Semiconductors
Product data sheet
15 V low VCE(sat) PNP double transistor
MLD649
600
MLD651
−1200
VBE
handbook, halfpage
hFE
PBSS3515VS
handbook, halfpage
(mV)
(1)
−1000
(1)
400
−800
(2)
(2)
−600
200
(3)
(3)
−400
0
−10−1
−1
−10
−200
−10−1
−103
−102
IC (mA)
VCE = −2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
VCE = −2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MLD653
−103
handbook, halfpage
−1
−10
−102
−103
IC (mA)
Base-emitter voltage as a function of
collector current; typical values.
MLD652
−1200
handbook, halfpage
VBEsat
VCEsat
(mV)
(mV)
−1000
(1)
−102
(2)
−800
(1)
−600
(3)
−10
(2)
(3)
−400
−1
−10−1
−1
−10
−102
IC (mA)
−200
−10−1
−103
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4
Fig.5
Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Dec 23
5
−1
−10
−102
−103
IC (mA)
Base-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
15 V low VCE(sat) PNP double transistor
MLD654
103
handbook, halfpage
PBSS3515VS
MLD650
−1200
handbook, halfpage
RCEsat
(3)
(4)
IC
(mA)
(Ω)
(2)
(1)
102
(5)
−800
(6)
(7)
10
(8)
−400
1
(9)
(1)
(2)
10−1
−10−1
−1
−10
(10)
(3)
−102
0
−103
IC (mA)
−2
0
−4
−6
−8
−10
VCE (V)
Tamb = 25 °C.
IB = −7 mA.
IB = −6.3 mA.
IB = −5.6 mA.
IB = −4.9 mA.
IB = −4.2 mA.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1)
(2)
(3)
(4)
(5)
Fig.6
Fig.7
Equivalent on-resistance as a function of
collector current; typical values.
2004 Dec 23
6
(6) IB = −3.5 mA.
(7) IB = −2.8 mA.
(8) IB = −2.1 mA.
(9) IB = −1.4 mA.
(10) IB = −0.7 mA.
Collector current as a function of
collector-emitter voltage; typical values.
NXP Semiconductors
Product data sheet
15 V low VCE(sat) PNP double transistor
PBSS3515VS
PACKAGE OUTLINE
Plastic surface-mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
ISSUE DATE
04-11-08
06-03-16
SOT666
2004 Dec 23
EUROPEAN
PROJECTION
7
NXP Semiconductors
Product data sheet
15 V low VCE(sat) PNP double transistor
PBSS3515VS
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Dec 23
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R75/03/pp9
Date of release: 2004 Dec 23
Document order number: 9397 750 14427